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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9012M TRANSISTOR
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
Complementary to S9013M
Excellent hFE linearity
APPLICATION
150mW Output Amplifier of Potable Radios in Class
B Push-pull Operation.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MARKING: 2T1
C
2T1
B E
MAXIMUM RATINGS TA=25 unless otherwise noted℃
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Dissipation 150 mW
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO I
C= -1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V
Collector cut-off current I
CBO V
CB=-40 V ,IE=0 -0.1
μA
Collector cut-off current I
CEO V
CE=-20V ,IB=0 -0.1
μA
Emitter cut-off current I
EBO V
EB= -5V , IC=0 -0.1
μA
DC current gain h
FE V
CE=-1V, IC=-50mA 120 400
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V
Transition frequency f
T VCE=-6V, IC= -20mA
f=30MHz 150 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 5 pF
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
1. BASE
2. EMITTER
3. COLLECTOR