© Semiconductor Components Industries, LLC, 2017
May, 2019 − Rev. 3
1Publication Order Number:
FOD4118/D
FOD410, FOD4108,
FOD4116, FOD4118
6-Pin DIP High dv/dt
Zero-Cross Triac Drivers
Description
The FOD410, FOD4108, FOD4116 and FOD4118 devices consist
of an infrared emitting diode coupled to a hybrid triac formed with two
inverse parallel SCRs which form the triac function capable of driving
discrete triacs. The FOD4116 and FOD4118 utilize a high efficiency
infrared emitting diode which offers an improved trigger sensitivity.
These devices are housed in a standard 6−pin dual in−line (DIP)
package.
Features
•300 mApeak On−State Current
•Zero−Voltage Crossing
•High Blocking Voltage
−600 V (FOD410, FOD4116)
−800 V (FOD4108, FOD4118)
•High Trigger Sensitivity
−1.3 mA (FOD4116, FOD4118)
−2 mA (FOD410, FOD4118)
•High Static dv/dt (10,000 V/ms)
•Safety and Regulatory Approvals:
−UL1577, 5.000 VACRMS for 1 Minute
−DIN−EN/IEC60747−5−5
•These Devices are Pb−Free and are RoHS Compliant
Applications
•Solid−State Relays
•Industrial Controls
•Lighting Controls
•Static Power Switches
•AC Motor Starters
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MARKING DIAGRAM
6
1
6
1
PDIP6 7.3x6.5, 2.54P
CASE 646CF
PDIP6 GW
CASE 709AG
PDIP6 7.3x6.5, 2.54P
CASE 646CE
MAIN TERM.
NC*
N/C
1
2
3
ANODE
CATHODE
4
5
6MAIN TERM.
See detailed ordering and shipping information on page 10 of
this data sheet.
ORDERING INFORMATION
*DO NOT CONNECT
(TRIAC SUBSTRATE)
FUNCTIONAL SCHEMATIC
ON = ON Semiconductor Logo
FOD410 = Device Number
V = VDE mark. DIN EN/IEC60747−5−5
Option (only appears on component
ordered with this option)
X = One−Digit Year Code
YY = Digit Work Week
D = Assembly Package Code
V X YY D
FOD410
ON
6
1
FOD410, FOD4108, FOD4116, FOD4118
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2
SAFETY AND INSULATION RATINGS
Parameter Characteristics
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
< 150 VRMS
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
I−IV
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁ
< 300 VRMS
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
I−IV
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Climatic Classification
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
55/100/21
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Pollution Degree (DIN VDE 0110/1.89)
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
2
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Comparative Tracking Index
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
175
Symbol Parameter Value Unit
VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
1360 Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1594 Vpeak
VIORM Maximum Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable Over−Voltage 6000 Vpeak
External Creepage ≥7 mm
External Clearance ≥7 mm
DTI Distance Through Insulation (Insulation Thickness) ≥0.4 mm
TSCase Temperature (Note 1) 175 °C
IS,INPUT Input Current (Note 1) 400 mA
PS,OUTPUT Output Power (Note 1) 700 mW
RIO Insulation Resistance at TS, VIO = 500 V (Note 1) > 109W
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the
safety ratings shall be ensured by means of protective circuits.
1. Safety limit values − maximum values allowed in the event of a failure.
FOD410, FOD4108, FOD4116, FOD4118
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3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise specified)
Symbol Parameter Device Value Unit
TSTG Storage Temperature All −55 to +150 °C
TOPR Operating Temperature All −55 to +100 °C
TJJunction Temperature All −55 to +125 °C
TSOL Lead Solder Temperature All 260 for 10 sec °C
PD(TOTAL)
Total Device Power Dissipation @ 25°C All 500 mW
Derate Above 25°C All 6.6 mW/°C
EMITTER
IFContinuous Forward Current All 30 mA
VRReverse Voltage All 6 V
PD(EMITTER)
Total Power Dissipation 25°C Ambient All 50 mW
Derate Above 25°C All 0.71 mW/°C
DETECTOR
VDRM Off−State Output Terminal Voltage
FOD410, FOD4116 600
V
FOD4108, FOD4118 800
ITSM Peak Non−Repetitive Surge Current (single cycle 60 Hz sine wave) All 3 Apeak
ITM Peak On−State Current All 300 mApeak
PD(DETECTOR)
Total Power Dissipation @ 25°C Ambient All 450 mW
Derate Above 25°C All 5.9 mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
FOD410, FOD4108, FOD4116, FOD4118
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4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Symbol Parameter Test Conditions Device Min Typ Max Unit
INDIVIDUAL COMPONENT CHARACTERISTICS
Emitter
VFInput Forward Voltage IF = 20 mA All −1.25 1.50 V
IRReverse Leakage Current VR = 6 V All −0.0001 10 mA
Detector
ID(RMS) Peak Blocking Current
Either Direction
IF = 0,
TA = 100°C
(Note 2)
VD = 600 V FOD410,
FOD4116
−3 100 mA
VD = 800 V FOD4108,
FOD4118
IR(RMS) Reverse Current TA = 100 °CVD = 600 V FOD410,
FOD4116
−3 100 mA
VD = 800 V FOD4108,
FOD4118
dv/dt Critical Rate of Rise of
Off−State Voltage
IF = 0 A (Note 3) VD = VDRM All 10,000 − − V/ms
TRANSFER CHARACTERISTICS
IFT LED Trigger Current Main Terminal Voltage = 5 V (Note 4) FOD410,
FOD4108
−0.65 2.0 mA
FOD4116,
FOD4118
−0.65 1.3
VTM Peak On−State Voltage,
Either Direction
ITM = 300 mA peak, IF = Rated IFT All −2.2 3 V
IHHolding Current, Either
Direction
VT = 3 V All −200 500 mA
ILLatching Current VT = 2.2 V All −5−mA
tON Turn−On Time PF = 1.0,
IT = 300 mA
VRM = VDM = 424 VAC FOD410,
FOD4116,
FOD4118
−60 −ms
VRM = VDM = 565 VAC FOD4108
tOFF Turn−Off Time VRM = VDM = 424 VAC FOD410,
FOD4116,
FOD4118
−52 −ms
VRM = VDM = 565 VAC FOD4108
dv/dtCCritical Rate of Rise of
Voltage at Current
Commutation
VD = 230 VRMS, ID = 300 mAPK All −10 −V/ms
di/dtCCritical Rate of Rise of
On−State Current
Commutation
VD = 230 VRMS, ID = 300 mAPK All −9−A/ms
dv(IO)/dt Critical Rate of Rise of
Coupled Input / Output
Voltage
IT = 0 A, VRM = VDM = 424 VAC All 10,000 − − V/ms
2. Test voltage must be applied within dv/dt rating.
3. This is static dv/dt. Commutating dv/dt is a function of the load−driving thyristor(s) only.
4. All devices are guaranteed to trigger at an IF value less than or equal to max IFT
. Therefore, recommended operating IF lies between max
IFT (2 mA for FOD410 and FOD4108 and 1.3 mA for FOD4116 and FOD4118) and the absolute max IF (30 mA).
FOD410, FOD4108, FOD4116, FOD4118
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5
ZERO CROSSING CHARACTERISTICS
Symbol Parameter Test Conditions Device Min Typ Max Unit
VINH Inhibit Voltage (MT1−MT2
Voltage above which
device will not trigger)
IF = Rated IFT All −8 25 Vpeak
IDRM2 Leakage in Inhibit State IF = Rated IFT, Rated VDRM, Off−State All −20 200 mA
ISOLATION CHARACTERISTICS
VISO Steady State Isolation
Voltage
f = 60 Hz, t = 1 Minute (Note 5) All 5,000 − − VACRMS
5. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1, 2 and 3 are common, and pins 4, 5 and 6 are
common. 5,000 VACRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration.
FOD410, FOD4108, FOD4116, FOD4118
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6
TYPICAL APPLICATION
Figure 1 shows a typical circuit for when hot line
switching is required. In this circuit the “hot” side of the line
is switched and the load connected to the cold or neutral side.
The load may be connected to either the neutral or hot line.
Rin is calculated so that IF is equal to the rated IFT of the
part, 2 mA for FOD410 and FOD4108, 1.3 mA for
FOD4116 and FOD4118. The 39 W resistor and 0.01 mF
capacitor are for snubbing of the triac and may or may not
be necessary depending upon the particular triac and load
use.
0.01 mF
VCC
Rin 1
2
3
6
5
4240 VAC
HOT
FKPF12N80
NEUTRAL
360 W
330 W
39 W
LOAD
Figure 1. Hot−Line Switching Application Circuit
FOD410
FOD4108
FOD4116
FOD4118
*For highly inductive loads (power factor < 0.5), change this value to 360 W.
Figure 2. Inverse−Parallel SCR Driver Circuit
VCC
Rin
1
2
3
6
5
4
240 VAC
SCR
360
R1 D1
SCR
R2 D2
LOAD
W
FOD410
FOD4108
FOD4116
FOD4118
Suggested method of firing two, back−to−back SCR’s
with a ON Semiconductor triac driver. Diodes can be
1N4001; resistors, R1 and R2, are optional 330 W.
NOTE: This optoisolator should not be used to drive a
load directly. It is intended to be a discrete triac
driver device only.
FOD410, FOD4108, FOD4116, FOD4118
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7
TYPICAL CHARACTERISTICS
−40−60 80 100
0.6
0.8
1.0
1.2
1.4
1.6 VAK = 5.0 V
Normalized to TA = 25°C
110
IF – FORWARD CURRENT (mA)
VF – FORWARD VOLTAGE (V)
0.1 100
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−200 204060
TA – AMBIENT TEMPERATURE (°C)
IFT – NORMALIZED LED TRIGGER CURRENT
−55°C
25°C
85°C
1 100
1
10
100
10−610−510−410−310−210−1100101
10000
1000
100
10
200
0 800 1000
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0
1
10
100
1000
t – LED PULSE DURATION (s)
If(pk) – PEAK LED CURRENT (mA)
W – PULSE WIDTH (ms)
IFTH(PW)/IFTH(DC) – NORMALIZED IFTH
VTM – ON−STATE VOLTAGE (V)
ITM – ON−STATE CURRENT (mA)
10
IFT/IF – NORMALIZED IF (mA)
tD – DELAY TIME (ms)
0.5
0.2
0.1
0.05
0.02
0.01
0.005
Factor
Duty
t
DF = t
tD = t(IF/IFT 25°C)
VD = 400 VP−P
F = 60 Hz
VL = 250 VP−P
60 Hz
F =
Normalized to DC
TA = 100°CTA = 25°C
Figure 3. Forward Voltage
(VF) vs. Forward Current (IF)
Figure 4. Normalized LED Trigger Current
(IFT) vs. Ambient Temperature (TA)
Figure 5. Peak LED Current vs. Duty
Factor, Tau
Figure 6. Trigger Delay Time
Figure 7. Pulse Trigger Current Figure 8. On−State Voltage (VTM) vs.
On−State Current (ITM)
1234400 600
FOD410, FOD4108, FOD4116, FOD4118
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8
TYPICAL CHARACTERISTICS (continued)
−60 −40 −20020406080100
0.1
1
10
−40−60 80 100
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
−60 −40 −20020406080100
50
100
150
200
250
300
350
−200204060
TA – AMBIENT TEMPERATURE (°C)
IH – NORMALIZED HOLDING CURRENT
TA – AMBIENT TEMPERATURE (°C)
ITP – PEAK ON−STATE CURRENT (mA)
Normalized to TA = 25°C
ITP = f(TA)
TA – AMBIENT TEMPERATURE (°C)
IDRM – NORMALIZED OFF−STATE CURRENT
80
TA – AMBIENT TEMPERATURE (°C)
−60 −40 −20020406080100
2.5
2.0
1.5
1.0
0.5
0.0
TA – AMBIENT TEMPERATURE (°C)
IDRM2 (NORM) = IDRM2 (TA) / IDRM2 (25°C)
IF = Rated IFT
VDRM = 600 V
Normalized to TA = 25°C
VD = 800 V, IBD (mA)
Normalized to TA = 25°C
100
1.2
1.1
1.0
0.9
0.8
VINH (NORM) = VINH (TA) / VINH (25°C)
IF = Rated IFT
Normalized to TA = 25°C
Figure 9. Normalized Holding Current (IH)
vs. Ambient Temperature (TA)
Figure 10. Normalized Off−State Current
(IDRM) vs. Ambient Temperature (TA)
Figure 11. Normalized Inhibit Voltage
(VINH) vs. Ambient Temperature (TA)
Figure 12. Normalized Leakage in Inhibit
State (IDRM2) vs. Ambient Temperature (TA)
Figure 13. Current Reduction
−60 −40 −20 0 20 40 60
FOD410, FOD4108, FOD4116, FOD4118
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9
REFLOW PROFILE
•Peak reflow temperature: 262_C (package surface temperature)
•Time of temperature higher than 18 5_C for 160 seconds or less
•One time soldering reflow is recommended
245 _C, 10 to 30 seconds
Time (Minute)
0
300
250
200
150
100
50
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Temperature (_C)
Time above 183_C, < 160 seconds
Ramp up = 2 to 10_C/second
260_C peak
Figure 14. Reflow Profile
ORDERING INFORMATION
Part Number Package Shipping†
FOD410 DIP 6−Pin Tube (50 Units)
FOD410S SMT 6−Pin (Lead Bend) Tube (50 Units)
FOD410SD SMT 6−Pin (Lead Bend) Tape and Reel (1000 Units)
FOD410V DIP 6−Pin, DIN EN/IEC60747−5−5 Option Tube (50 Units)
FOD410SV SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option Tube (50 Units)
FOD410SDV SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option Tape and Reel (1000 Units)
FOD410TV DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option Tube (50 Units)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
6. The product orderable part number system listed in this table also applies to the FOD4108, FOD4116, and FOD4118 product families.
PDIP6 7.3x6.5, 2.54P
CASE 646CE
ISSUE O
DATE 31 JUL 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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PDIP6 7.3X6.5, 2.54P
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PDIP6 7.3x6.5, 2.54P
CASE 646CF
ISSUE O
DATE 31 JUL 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
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PDIP6 7.3X6.5, 2.54P
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PDIP6 GW
CASE 709AG
ISSUE A
DATE 31 JUL 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
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