FOD410, FOD4108, FOD4116, FOD4118 6-Pin DIP High dv/dt Zero-Cross Triac Drivers Description The FOD410, FOD4108, FOD4116 and FOD4118 devices consist of an infrared emitting diode coupled to a hybrid triac formed with two inverse parallel SCRs which form the triac function capable of driving discrete triacs. The FOD4116 and FOD4118 utilize a high efficiency infrared emitting diode which offers an improved trigger sensitivity. These devices are housed in a standard 6-pin dual in-line (DIP) package. www.onsemi.com PDIP6 GW CASE 709AG 6 1 PDIP6 7.3x6.5, 2.54P CASE 646CE 6 Features * 300 mApeak On-State Current * Zero-Voltage Crossing * High Blocking Voltage * * * * 1 - 600 V (FOD410, FOD4116) - 800 V (FOD4108, FOD4118) High Trigger Sensitivity - 1.3 mA (FOD4116, FOD4118) - 2 mA (FOD410, FOD4118) High Static dv/dt (10,000 V/ms) Safety and Regulatory Approvals: - UL1577, 5.000 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5 These Devices are Pb-Free and are RoHS Compliant 6 1 MARKING DIAGRAM ON FOD410 V X YY D ON = ON Semiconductor Logo FOD410 = Device Number V = VDE mark. DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) X = One-Digit Year Code YY = Digit Work Week D = Assembly Package Code Applications * * * * * PDIP6 7.3x6.5, 2.54P CASE 646CF Solid-State Relays Industrial Controls Lighting Controls Static Power Switches AC Motor Starters FUNCTIONAL SCHEMATIC ANODE 1 CATHODE 2 N/C 3 6 MAIN TERM. 5 NC* 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) ORDERING INFORMATION See detailed ordering and shipping information on page 10 of this data sheet. (c) Semiconductor Components Industries, LLC, 2017 May, 2019 - Rev. 3 1 Publication Order Number: FOD4118/D FOD410, FOD4108, FOD4116, FOD4118 SAFETY AND INSULATION RATINGS AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAA AAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage < 150 VRMS I-IV < 300 VRMS I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol VPR 175 Parameter Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm DTI Distance Through Insulation (Insulation Thickness) 0.4 mm TS Case Temperature (Note 1) 175 C IS,INPUT Input Current (Note 1) 400 mA PS,OUTPUT Output Power (Note 1) 700 mW > 109 W RIO Insulation Resistance at TS, VIO = 500 V (Note 1) As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. 1. Safety limit values - maximum values allowed in the event of a failure. www.onsemi.com 2 FOD410, FOD4108, FOD4116, FOD4118 ABSOLUTE MAXIMUM RATINGS (TA = 25C, Unless otherwise specified) Symbol Parameter Device Value Unit TSTG Storage Temperature All -55 to +150 C TOPR Operating Temperature All -55 to +100 C Junction Temperature All -55 to +125 C Lead Solder Temperature All 260 for 10 sec C Total Device Power Dissipation @ 25C All 500 mW Derate Above 25C All 6.6 mW/C IF Continuous Forward Current All 30 mA VR Reverse Voltage All 6 V Total Power Dissipation 25C Ambient All 50 mW Derate Above 25C All 0.71 mW/C FOD410, FOD4116 600 FOD4108, FOD4118 800 TJ TSOL PD(TOTAL) EMITTER PD(EMITTER) DETECTOR VDRM Off-State Output Terminal Voltage ITSM Peak Non-Repetitive Surge Current (single cycle 60 Hz sine wave) All 3 Apeak ITM Peak On-State Current All 300 mApeak Total Power Dissipation @ 25C Ambient All 450 mW Derate Above 25C All 5.9 mW/C PD(DETECTOR) V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 3 FOD410, FOD4108, FOD4116, FOD4118 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified) Symbol Parameter Test Conditions Device Min Typ Max Unit INDIVIDUAL COMPONENT CHARACTERISTICS Emitter VF Input Forward Voltage IF = 20 mA All - 1.25 1.50 V IR Reverse Leakage Current VR = 6 V All - 0.0001 10 mA Peak Blocking Current Either Direction IF = 0, TA = 100C (Note 2) VD = 600 V FOD410, FOD4116 - 3 100 mA VD = 800 V FOD4108, FOD4118 TA = 100 C VD = 600 V FOD410, FOD4116 - 3 100 mA VD = 800 V FOD4108, FOD4118 VD = VDRM All 10,000 - - V/ms FOD410, FOD4108 - 0.65 2.0 mA FOD4116, FOD4118 - 0.65 1.3 Detector ID(RMS) IR(RMS) dv/dt Reverse Current Critical Rate of Rise of Off-State Voltage IF = 0 A (Note 3) TRANSFER CHARACTERISTICS IFT LED Trigger Current Main Terminal Voltage = 5 V (Note 4) VTM Peak On-State Voltage, Either Direction ITM = 300 mA peak, IF = Rated IFT All - 2.2 3 V IH Holding Current, Either Direction VT = 3 V All - 200 500 mA IL Latching Current VT = 2.2 V Turn-On Time PF = 1.0, IT = 300 mA tON tOFF Turn-Off Time All - 5 - mA VRM = VDM = 424 VAC FOD410, FOD4116, FOD4118 - 60 - ms VRM = VDM = 565 VAC FOD4108 VRM = VDM = 424 VAC FOD410, FOD4116, FOD4118 - 52 - ms VRM = VDM = 565 VAC FOD4108 dv/dtC Critical Rate of Rise of Voltage at Current Commutation VD = 230 VRMS, ID = 300 mAPK All - 10 - V/ms di/dtC Critical Rate of Rise of On-State Current Commutation VD = 230 VRMS, ID = 300 mAPK All - 9 - A/ms dv(IO)/dt Critical Rate of Rise of Coupled Input / Output Voltage IT = 0 A, VRM = VDM = 424 VAC All 10,000 - - V/ms 2. Test voltage must be applied within dv/dt rating. 3. This is static dv/dt. Commutating dv/dt is a function of the load-driving thyristor(s) only. 4. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (2 mA for FOD410 and FOD4108 and 1.3 mA for FOD4116 and FOD4118) and the absolute max IF (30 mA). www.onsemi.com 4 FOD410, FOD4108, FOD4116, FOD4118 ZERO CROSSING CHARACTERISTICS Symbol Parameter Device Min Typ Max Unit VINH Inhibit Voltage (MT1-MT2 Voltage above which device will not trigger) IF = Rated IFT Test Conditions All - 8 25 Vpeak IDRM2 Leakage in Inhibit State IF = Rated IFT, Rated VDRM, Off-State All - 20 200 mA f = 60 Hz, t = 1 Minute (Note 5) All 5,000 - - VACRMS ISOLATION CHARACTERISTICS VISO Steady State Isolation Voltage 5. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1, 2 and 3 are common, and pins 4, 5 and 6 are common. 5,000 VACRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration. www.onsemi.com 5 FOD410, FOD4108, FOD4116, FOD4118 TYPICAL APPLICATION Figure 1 shows a typical circuit for when hot line switching is required. In this circuit the "hot" side of the line is switched and the load connected to the cold or neutral side. The load may be connected to either the neutral or hot line. Rin is calculated so that IF is equal to the rated IFT of the Rin VCC 1 2 3 6 FOD410 FOD4108 FOD4116 FOD4118 part, 2 mA for FOD410 and FOD4108, 1.3 mA for FOD4116 and FOD4118. The 39 W resistor and 0.01 mF capacitor are for snubbing of the triac and may or may not be necessary depending upon the particular triac and load use. 360 W HOT 5 FKPF12N80 39 W 4 240 VAC 0.01 mF 330 W LOAD NEUTRAL *For highly inductive loads (power factor < 0.5), change this value to 360 W. Figure 1. Hot-Line Switching Application Circuit 240 VAC R1 1 VCC Rin 2 3 D1 6 FOD410 FOD4108 FOD4116 FOD4118 5 4 SCR SCR 360 W R2 D2 LOAD Figure 2. Inverse-Parallel SCR Driver Circuit Suggested method of firing two, back-to-back SCR's with a ON Semiconductor triac driver. Diodes can be 1N4001; resistors, R1 and R2, are optional 330 W. NOTE: This optoisolator should not be used to drive a load directly. It is intended to be a discrete triac driver device only. www.onsemi.com 6 FOD410, FOD4108, FOD4116, FOD4118 TYPICAL CHARACTERISTICS 1.6 1.4 -55C 1.2 25C 85C 1.0 0.8 0.6 0.1 1.6 IFT - NORMALIZED LED TRIGGER CURRENT VF - FORWARD VOLTAGE (V) 1.8 110 IF - FORWARD CURRENT (mA) 1.4 1.2 1.0 0.8 0.6 -60 100 Figure 3. Forward Voltage (VF) vs. Forward Current (IF) 100 tD = t(IF/IFT 25C) VD = 400 VP-P F = 60 Hz 0.005 0.01 1000 tD - DELAY TIME (ms) Duty Factor t 0.02 DF = 0.05 t 0.1 0.2 0.5 100 10-5 10-4 10-3 10-2 10-1 t - LED PULSE DURATION (s) 100 10 1 101 10 IFT/IF - NORMALIZED IF (mA) 1 Figure 5. Peak LED Current vs. Duty Factor, Tau Figure 6. Trigger Delay Time 1000 VL = 250 VP-P F = 60 Hz Normalized to DC 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0 200 400 600 W - PULSE WIDTH (ms) 800 ITM - ON-STATE CURRENT (mA) 1.7 0.9 80 100 10 10-6 IFTH(PW)/IFTH(DC) - NORMALIZED IFTH -20 0 20 40 60 TA - AMBIENT TEMPERATURE (C) -40 Figure 4. Normalized LED Trigger Current (IFT) vs. Ambient Temperature (TA) 10000 If(pk) - PEAK LED CURRENT (mA) VAK = 5.0 V Normalized to TA = 25C 100 1 1000 TA = 100C 10 0 1 TA = 25C 2 3 4 VTM - ON-STATE VOLTAGE (V) Figure 7. Pulse Trigger Current Figure 8. On-State Voltage (VTM) vs. On-State Current (ITM) www.onsemi.com 7 100 FOD410, FOD4108, FOD4116, FOD4118 IH - NORMALIZED HOLDING CURRENT 2.2 IDRM - NORMALIZED OFF-STATE CURRENT TYPICAL CHARACTERISTICS (continued) Normalized to TA = 25C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -60 -40 -20 0 20 40 60 80 100 10 VD = 800 V, I BD (mA) Normalized to TA = 25C 1 0.1 -60 -40 -20 TA - AMBIENT TEMPERATURE (C) Figure 9. Normalized Holding Current (IH) vs. Ambient Temperature (TA) IDRM2 (NORM) = IDRM2 (TA) / IDRM2 (25C) 2.5 IF = Rated IFT Normalized to TA = 25C 1.1 1.0 0.9 -60 -40 -20 0 20 40 80 60 2.0 60 80 100 1.5 1.0 0.5 0.0 -60 100 -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Figure 12. Normalized Leakage in Inhibit State (IDRM2) vs. Ambient Temperature (TA) Figure 11. Normalized Inhibit Voltage (VINH) vs. Ambient Temperature (TA) 350 ITP = f(TA) 300 250 200 150 100 50 -60 40 IF = Rated IFT VDRM = 600 V Normalized to TA = 25C TA - AMBIENT TEMPERATURE (C) ITP - PEAK ON-STATE CURRENT (mA) VINH (NORM) = VINH (TA) / VINH (25C) 20 Figure 10. Normalized Off-State Current (IDRM) vs. Ambient Temperature (TA) 1.2 0.8 0 TA - AMBIENT TEMPERATURE (C) -40 -20 0 20 40 60 TA - AMBIENT TEMPERATURE (C) Figure 13. Current Reduction www.onsemi.com 8 80 100 FOD410, FOD4108, FOD4116, FOD4118 REFLOW PROFILE 245 _C, 10 to 30 seconds Temperature (_C) 300 260_C peak 250 200 150 Time above 183_C, < 160 seconds 100 50 0 Ramp up = 2 to 10_C/second 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) *Peak reflow temperature: 262_C (package surface temperature) *Time of temperature higher than 18 5_C for 160 seconds or less *One time soldering reflow is recommended Figure 14. Reflow Profile ORDERING INFORMATION Part Number FOD410 Package Shipping DIP 6-Pin Tube (50 Units) FOD410S SMT 6-Pin (Lead Bend) Tube (50 Units) FOD410SD SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) FOD410SV SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) FOD410SDV SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) FOD410V FOD410TV DIP 6-Pin, 0.4" Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 6. The product orderable part number system listed in this table also applies to the FOD4108, FOD4116, and FOD4118 product families. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 7.3x6.5, 2.54P CASE 646CE ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13456G PDIP6 7.3X6.5, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 7.3x6.5, 2.54P CASE 646CF ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13457G PDIP6 7.3X6.5, 2.54P DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. 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(c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP6 GW CASE 709AG ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13455G PDIP6 GW DATE 31 JUL 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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