MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM55RZ/EZ-M,-H * IT (AV) * IF (AV) * VRRM * * * * Average on-state current ............ 55A Average forward current ............ 55A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 K1 (RZ) 2-6.5 A2 26 12.5 A1K2 A1K2 CR K1 K1 G1 20 K1 G1 3-M5 (EZ) Tab#110, t=0.5 CR K1K2 A2 LABEL 30 9 A1 6.5 20 SR 21 17.5 A2 SR K1 G1 Feb.1999 http://store.iiic.cc/ MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Voltage class Parameter Symbol M H Unit VRRM Repetitive peak reverse voltage 400 800 V VRSM Non-repetitive peak reverse voltage 480 960 V VR (DC) DC reverse voltage 320 640 V VDRM Repetitive peak off-state voltage 400 800 V VDSM Non-repetitive peak off-state voltage 480 960 V VD (DC) DC off-state voltage 320 640 V Parameter Symbol Conditions Ratings Unit 86 A 55 A IT (RMS), IF (RMS) RMS current IT (AV), IF (AV) Average current Single-phase, half-wave 180 conduction, TC=86C ITSM, IFSM Surge (non-repetitive) current One half cycle at 60Hz, peak value 1100 A I2t I2t for fusing Value for one cycle of surge current 5.0 x 103 A2s di/dt Critical rate of rise of on-state current VD=1/2VDRM, IG=1.0A, Tj=125C 100 A/s PGM Peak gate power dissipation 5.0 W PG (AV) Average gate power dissipation 0.5 W VFGM Peak gate forward voltage 10 V VRGM Peak gate reverse voltage 5.0 V IFGM Peak gate forward current 2.0 A Tj Junction temperature -40~125 C Tstg Storage temperature -40~125 C Viso Isolation voltage Charged part to case Main terminal screw M5 -- Mounting torque Mounting screw M6 -- Typical value Weight 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.96~2.94 N*m 20~30 kg*cm 160 g ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125C, VRRM applied -- -- 10 mA IDRM Repetitive peak off-state current Tj=125C, VDRM applied -- -- 10 mA VTM, VFM Forward voltage Tj=125C, ITM=IFM=165A, instantaneous meas. -- -- 1.35 V dv/dt Critical rate of rise of off-state voltage Tj=125C, VD=2/3VDRM 500 -- -- V/s VGT Gate trigger voltage Tj=25C, VD=6V, RL=2 -- -- 3.0 V VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM 0.25 -- -- V IGT Gate trigger current Tj=25C, VD=6V, RL=2 15 -- 100 mA Rth (j-c) Thermal resistance Junction to case (per 1/2 module) -- -- 0.5 C/ W Rth (c-f) Contact thermal resistance Case to fin, conductive grease applied (per 1/2 module) -- -- 0.2 C/ W Insulation resistance Measured with a 500V megohmmeter between main terminal and case 10 -- -- M -- Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 http://store.iiic.cc/ MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item VRRM VRSM VR (DC) IT (RMS) IT (AV) ITSM IF (RMS) IF (AV) IFSM VDRM VDSM VD (DC) -- -- -- Tj Tstg dv/dt VGT VGD IGT -- -- -- -- I2t di/dt Thyristor Diode Item PGM PG (AV) VFGM IFGM -- -- -- -- -- Thyristor Diode ELECTRICAL CHARACTERISTICS Item IRRM IDRM VTM VFM Rth (j-c) Rth (c-f) Thyristor -- Diode PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 1200 Tj=125C SURGE (NON-REPETITIVE) CURRENT (A) CURRENT (A) 10 3 7 5 3 2 1000 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.4 RATED SURGE (NON-REPETITIVE) CURRENT 0.8 1.2 1.6 2.0 800 600 400 200 2.4 FORWARD VOLTAGE (V) PGM=5W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 IGT= 0 10 100mA 7 5 Tj=25C 3 2 VGD=0.25V 10 -1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 TRANSIENT THERMAL IMPEDANCE (C/W) VFGM=10V IFGM=2.0A GATE VOLTAGE (V) 10 1 2 3 5 7 10 20 30 50 70100 CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 1 GATE CURRENT (mA) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/ MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 130 180 120 60 60 50 90 =30 40 30 360 20 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 10 0 0 10 20 100 AVERAGE POWER DISSIPATION (W) 120 CASE TEMPERATURE (C) 70 30 40 50 60 70 80 =30 60 90 120 180 70 0 10 20 120 40 20 60 80 90 80 70 50 100 =30 60 90 180 270 DC 120 0 20 CASE TEMPERATURE (C) AVERAGE POWER DISSIPATION (W) 60 40 20 40 60 100 120 115 110 105 80 100 120 140 160 RMS CURRENT (A) 95 60 90 360 90 80 =30 100 85 20 80 125 90 60 30 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 60 LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 130 =180 40 AVERAGE CURRENT (A) 0 80 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 60 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 160 0 70 360 110 AVERAGE CURRENT (A) 80 60 130 360 20 100 50 LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 40 120 40 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 180 120 90 60 =30 140 30 AVERAGE CURRENT (A) 270 0 90 AVERAGE CURRENT (A) 80 0 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 100 50 80 DC 60 360 110 60 CASE TEMPERATURE (C) AVERAGE POWER DISSIPATION (W) 80 RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 0 20 40 60 180 80 100 120 140 160 RMS CURRENT (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 160 120 CASE TEMPERATURE (C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) 125 120 180 140 90 100 =30 60 80 360 60 RESISTIVE, INDUCTIVE LOAD 40 20 0 360 120 115 RESISTIVE, INDUCTIVE LOAD 110 105 100 95 90 =30 60 90 120 85 0 20 40 60 80 80 100 120 140 160 0 20 DC OUTPUT CURRENT (A) (PER TWO MODULES) 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER TWO MODULES) 160 LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) 130 140 120 90 120 60 100 120 =30 80 60 360 40 20 0 CASE TEMPERATURE (C) (PER SINGLE MODULE) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) POWER DISSIPATION (W) (PER SINGLE MODULE) 40 180 20 40 60 RESISTIVE, INDUCTIVE LOAD 100 90 =30 80 60 90 120 70 60 RESISTIVE, INDUCTIVE LOAD 0 360 110 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER THREE MODULES) 50 0 20 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999 http://store.iiic.cc/