TOSHIBA TIM5964-16SL-031 1. RF PERFORMANCE SPECIFICATIONS _(Ta= 25 C) CHARACTERISTICS |SYMBOL| CONDITION | MIN. | TYP. | MAX. | UNIT Output Power at 1dB P1dB 40.5 ]41.5| | dBm Compression Point Vps= 10V Power Gain at 1dB GidBif=5.9-6.4GHz | 85 | 9.5 dB Compression Point IpS=3.1A(Const) 3rd Order intermodulation IMs NOTE -40 - _ dBc Distortion Channel Temperature ATch - 80 C Rise NOTE : Two Tone Test, Po= 31.5dBm (Single Carrier Level) Vbs= 10V, Ips=3.1A(Const) 2, ELECTRICAL CHARACTERISTICS (Ta= 25 C ) CHARACTERISTICS | SYMBOL| CONDITION | MIN. | TYP. | MAX. | UNIT Transconductance gm Vos= 3V |3600|; mS Ips= 6.0A Pinch-off Voltage VGSoff |VDS= 3V -1.0 | -2.5 | -4.0 V los= 60mMA Saturated Drain Current Ipss) = | VDS= 3V | 10.5 | 14.0 A Vas= 0V Gate-Source Vaso |IGs=-200 pA; -5 V Breakdown Voltage Thermai Resistance Rthic-c) [Channel to 1.5 | 2.0 | C/AV Case Applications Engineering Microwave Solid-State Department TOSHIBA CORPORATION, Komukai Works