SB 160 SCHOTTKY DIE SPECIFICATION General Description: 60 V 1 A (5Standard Low) VF TYPE: SB160 (5Single Dual) Anode SYM Spec. Limit VRRM 60 Volt IFAV 1 Amp VF MAX 0.630 Volt IR MAX 0.100 mA Nonrepetitive Peak Surge Current IFSM 32 Amp Operating Junction Temperature Tj 125 TSTG -50 to +150 ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Average Rectified Forward Current Die Sort UNIT Maximum Instantaneous Forward Voltage @ 1 Ampere, Ta=25 Reverse current @ VR= 63 Volt, Ta=25 MAXIMUM RATINGS Storage Temperature Specifications apply to die only. Actual performance may degrade when assembled. We do not guarantee device performance after assembly. Data sheet information is subjected to change without notice. DICE OUTLINE DRAWING DIM A B A C m 838 750 280 300 Mil 32.99 29.52 11.00 11.80 PS: B (1)Cutting street width is around 16m (0.62mil). (2)Both of top-side and back-side metals are Ti/Ni/Ag. Top-side Metal SiO2 Passivation C ITEM Die Size Top Metal Pad Size Thickness (Min) Thickness (Max) P+ Guard Ring Back-side Metal