SB 160
SCHOTTKY DIE SPECIFICATION TYPE: SB160
General Description: 60 V 1 A (5Standard □Low) VF，(5Single □Dual) Anode
ELECTRICAL CHARACTERISTICS SYM Spec. Limit Die Sort UNIT
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 60 Volt
Average Rectified Forward Current IFAV 1Amp
Maximum Instantaneous Forward Voltage
@ 1 Ampere, Ta=25℃VF MAX 0.630 Volt
Reverse current
@ VR= 63 Volt, Ta=25℃IR MAX 0.100 mA
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current IFSM 32 Amp
Operating Junction Temperature Tj 125 ℃
Storage Temperature TSTG -50 to +150 ℃
Specifications apply to die only. Actual performance may degrade when assembled.
We do not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM ITEM μm Mil
ADie Size 838 32.99
BTop Metal Pad Size 750 29.52
CThickness (Min) 280 11.00
Thickness (Max) 300 11.80
PS:
(1)Cutting street width is around 16μm (0.62mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
B
A
C
P+ Guard Ring
Back-side Metal
Top-side Metal
S O Passivation
i2
