1 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
mDOC H3
Embedded F l ash Drive (EFD) featuring Embedded TrueFFS
®
Flash Management Software
Data Sheet, June 2006
HIGHLIGHTS
mDOC H3 is an Embedded Flash Drive (EFD)
designed for mobile handsets and consumer
electronics devices. mDOC H3 is the new
generation of the successful msystems’ mDOC
product family, enabling tens of millions of
handsets and other mobile devices since the
year 2000.
mDOC H3 is a hybrid device combining an
embedded thin flash controller and standard
flash memory.
In addition to the high reliability and high
system performance offered by the current
mDOC family of products, mDOC H3 offers
plug-and-play integration, support for multiple
NAND technologies and more features such as
advanced power management schemes.
mDOC H3 uses the most advanced Multi-
Level Cell (MLC) and binary (SLC) NAND
flash technologies, enhanced by msystems’
proprietary TrueFFS embedded flash
management software running as firmware on
the flash controller.
The breakthrough in performance, size, cost
and design makes mDOC H3 the ideal solution
for mobile handsets and consumer electronics
manufacturers who require easy integration,
fast time to market, high-capacity, small form
factor, high-performance and most importantly,
high reliable storage.
mDOC H3 enables multimedia driven
applications such as music, photo, video, TV,
GPS, games, email, office and other
applications.
EMBEDDED TRUEFFS
msystems’ proprietary TrueFFS flash
management software is now embedded within
the mDOC H3 device and runs as firmware
from the flash controller.
Legacy mDOC Architecture
Host Flash
Controller Flash
+++
mDOC H3 Architecture
Host Flash
Controller Flash
+++
Legacy mDOC Architecture
Host Flash
Controller Flash
+++
Host Flash
Controller Flash
+++
mDOC H3 Architecture
Host Flash
Controller Flash
+++
Host Flash
Controller Flash
+++
Figure 1: TrueFFS - Legacy mDOC vs.
mDOC H3 Architecture
mDOC H3 Embedded Flash Drive
2 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Embedded TrueFFS enables mDOC H3 to
fully emulate a hard disk to the host processor,
enabling read/write operations that are
identical to a standard, sector-based hard drive.
In addition, Embedded TrueFFS employs
patented methods, such as virtual mapping,
dynamic and static wear-leveling, and
automatic block management to ensure high
data reliability and maximize flash life
expectancy.
Furthermore, it provides performance
enhancements such as multi-plane operations,
DMA support, Burst operation and Dual Data
RAM buffering.
mDOC H3 extended features are enabled by a
small driver that runs on the host side, called
DOC driver. DOC driver provides the host OS
with a standard Block Device interface. The
combination of Embedded TrueFFS and DOC
driver enables a practically Plug & Play
integration in the system.
PLUG-AND-PLAY INTEGRATION
mDOC H3 optimized architecture with
Embedded TrueFFS eliminates the need for
complicated software integration and testing
processes and enables a practically plug-and-
play integration in the system.
The replacement of one mDOC H3 device with
another, of a newer generation, requires
virtually no changes to the host. This makes
mDOC H3 the perfect solution for platforms
and reference designs, as it allows for the
utilization of more advanced NAND Flash
technology with minimal integration or
qualification efforts.
Embedded TrueFFS running from mDOC H3
means there is no need to modify and re-
qualify the flash management software on the
host system, or update mass production tools.
MULTIPLE FLASH SUPPORT
mDOC H3 with Embedded TrueFFS enables
access to the most advanced binary SLC
NAND and MLC NAND flash technology,
making mDOC H3 the only multi-sourced and
multi-technology EFD.
Embedded TrueFFS overcomes SLC and MLC
NAND-related error patterns by using a robust
error detection and correction (EDC/ECC)
mechanism.
mDOC H3 optimized architecture with
Embedded TrueFFS guarantees high reliability
and high system performance for whatever
flash technology or density utilized.
MDOC H3 PROVIDES:
Flash disk for both code and data storage
Code and data storage protection
Low voltage:
1.8V Core and I/O
3.3V Core and 3.3V/1.8V I/O (auto-detect)
Current Consumption
Active mode: 30mA
Power Save mode: 20mA
Deep Power-Down mode: 45uA
Standby mode : up to 10mA
1Gb (128MB) – 16Gb (2GB) data storage
capacity, with device cascading options for
up to 32Gb (4GB).
Enhanced Programmable Boot Block
(32KB) enabling eXecute In Place (XIP)
functionality using 16-bit access.
Small form factors:
mDOC H3 1Gb/2Gb - 115-ball
Fine-Pitch Ball Grid Array
(FBGA) 9x12mm.
mDOC H3 4Gb/8Gb/16Gb - 115-
ball Fine-Pitch Ball Grid Array
(FBGA) 12x18mm
mDOC H3 Embedded Flash Drive
3 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Ball to ball compatible with
mDOC G3/G4/H1 product
families.
Enhanced performance by implementation
of:
Multi-plane operations
DMA support
Burst operation
Dual Data RAM buffering
Read/Write Cache
Unrivaled data integrity with a robust 6 bit
Error Detection Code/Error Correction Code
(EDC/ECC) specifically tailored for the most
advanced flash technology.
Maximized flash endurance with TrueFFS
advanced flash management software.
Reduced complexity for the host system by
moving flash management functionality to
the device.
Plug & Play integration with the host
system, due to embedding TrueFFS within
the device itself.
Support for major mobile operating
systems (OSs), including Symbian OS,
Windows Mobile, Windows CE, Linux and
more.
Compatibility with major mobile CPUs
Performance:
Sustained write: 5-7 MB/sec.
Sustained read: 15-25 MB/sec
PROTECTION & SECURITY-
ENABLING
16-byte Unique Identification (UID)
number.
32-bit Random number Generator (RNG).
10 configurable protected partitions for
data and code:
Write protected
Read and Write protected
One Time Programmable (OTP)
Protection key and LOCK# signal
Sticky Lock (SLOCK) to lock boot
partition
Protected Bad Block Table.
RELIABILITY AND DATA INTEGRITY
Hardware on-the-fly 6-bit Error Detection
Code/Error Correction Code (EDC/ECC),
based on a BCH algorithm, tailored for the
most advanced flash technology.
Guaranteed data integrity after power
failure.
Transparent bad-block management.
Dynamic and static wear-leveling.
BOOT CAPABILITY
32KB Programmable Boot Block with XIP
capability to replace boot ROM or NOR.
128KB Virtual RAM IPL
254KB Paged RAM IPL
Boot Agent for automatic download of
boot code to the Programmable Boot
Block.
Asynchronous Boot mode to enable ARM-
based CPUs, e.g. TI OMAP, Intel PXAxxx,
to boot without the need for external glue
logic.
Exceptional boot performance with Burst
operation and DMA support enhanced by
external clock.
HARDWARE COMPATIBILITY
Configurable interface: simple SRAM-like
or multiplexed address/data interface.
CPU compatibility, including:
ARM-based CPUs
Texas Instruments OMAP, DBB
Intel PXAxxx family
Infineon xGold family
Analog Devices (ADI) digital
Baseband devices
mDOC H3 Embedded Flash Drive
4 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Freescale i.MXxx Application
processors and i.xx digital
Baseband devices
Zoran ER4525
Renesas SH mobile
EMP platforms
Qualcomm MSMxxxx
Hitachi SuperH™ SH-x
Supports 16 and 32-bit architectures
EMBEDDED TRUEFFS SOFTWARE
TrueFFS (True Flash File System) is mystems’
acclaimed and field proven patented flash
management software. TrueFFS is embedded
within the mDOC H3 device, providing full
Block Device functionality to the Operating
System (OS) file system via either TrueFFS
7.1 (for supporting both earlier mDOC
products and mDOC H3) or the mDOC driver.
TrueFFS allows for mDOC H3 to appear to the
OS as a regular hard drive, while at the same
time transparently providing robust flash media
management.
DOC driver provides full block device
emulation for transparent file system
management
Disk-like interface
Dynamic virtual mapping
Automatic bad block management
Dynamic and static wear-leveling
Programming, duplicating and testing tools
available in source code
Vxworks
Integrity
QNX
DOC driver Software Development Kit
(SDK) for quick and easy support for
proprietary OSs, or OS-less environment.
CAPACITY AND PACKAGING
1Gb (128MB) – 16Gb (2GB) capacity,
with device cascading option for up to two
devices (32Gb).
FBGA package: 115 balls, 9x12x1.2 mm
(width x length x height)
FBGA package: 115 balls, 12x18x1.4 mm
(width x length x height)
Ball-out compatible with mDOC G3, G4
and H1 products: Refer to Migration Guide
mDOC G3-P3 G3P3-LP G4 H1 to mDOC
H3 for further details.
OPERATING ENVIRONMENT
Wide OS support, including:
Symbian OS
Windows Mobile
Windows CE
Linux
Nucleus
OSE
PalmOS
mDOC H3 Embedded Flash Drive
5 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
REVISION HISTORY
Doc. No Revision Date Description Reference
0.1 January 2006 Preliminary version -
RSRVD balls left floating changed from
a recommendation to a requirement
Section 2
Standard I/F Ball H9 changed from
RSRVD to VSS
Section 2.2
Ballout change – Some NC balls
removed, resulting in 115 balls for all
products
Section 2.2
Ball H2 changed from DPD to A0 Sections 2.2
and 2.3
Details on internal pull up and pull down
resistors added
Sections 2.2.2
and 2.3.2
DPD signal removed (replaced with A0,
which should be connected to CPU A0
or to VSS)
Sections 2,
2.2.2 and 2.3.2
Balls G1,H1,J1,K1 marked as reserved
Ball G4 changed from RSRVD to
VCCQ
Sections 2.2.2
and 2.3.2
Ball D9 changed from NC to RSRVD Section 2.3.2
Modes of operation diagram updated Section 5
“Normal mode” name changed to
“Turbo mode”
Section 5
8KB address space settings added Section 6.5
Added register addresses for 8KB
address space
Section 7
Burst mode can only be used in
conjunction with mDOC H3 DMA
functionality
Section 9.8.2
Operating Conditions updated Section 10.2.4
Asynchronous boot mode timing
diagram added
Section 10.3.1
Multiplexed timing updated Section 10.3.3
Section 10.3.4
Power up timing updated Section 10.3.10
Mechanical drawing updated
(removed balls from 12x18mm drawing)
Section 10.4.2
92-DS-1205-10
0.2 June 2006
Ordering information modified Section 11
mDOC H3 Embedded Flash Drive
6 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
TABLE OF CONTENTS
1. Introduction..............................................................................................................................10
2. Product Overview....................................................................................................................11
2.1 Product Description ..........................................................................................................11
2.2 Standard Interface ............................................................................................................13
2.2.1 9x12/12x18 FBGA Ball Diagrams .......................................................................................13
2.2.2 9x12/12x18 FBGA Signal Description.................................................................................15
2.2.3 System Interface .................................................................................................................18
2.3 Multiplexed Interface.........................................................................................................19
2.3.1 9x12/12x18 FBGA Ball Diagram .........................................................................................19
2.3.2 9x12/12x18 FBGA Signal Description.................................................................................21
2.3.3 System Interface .................................................................................................................24
3. Theory of Operation ................................................................................................................25
3.1 Overview...........................................................................................................................25
3.2 Host Interface ...................................................................................................................26
3.2.1 Standard (NOR-Like) Interface ...........................................................................................26
3.2.2 Multiplexed Interface ...........................................................................................................26
3.2.3 Serial Interface ....................................................................................................................27
3.3 Host Agent........................................................................................................................27
3.3.1 Host Protocol.......................................................................................................................27
3.3.2 Boot Block (XIP)..................................................................................................................27
3.4 Boot Agent........................................................................................................................27
3.5 Error Detection Code / Error Correction Code (EDC/ECC) ..............................................28
3.6 Block Device Management...............................................................................................28
4. Data Protection and Security-Enabling features..................................................................29
4.1.1 Read/Write-Protected partitions..........................................................................................29
4.1.2 LOCK# signal ......................................................................................................................29
4.1.3 Sticky Lock (SLOCK) ..........................................................................................................29
4.1.4 Unique Identification (UID) Number ....................................................................................29
4.1.5 One-Time Programmable (OTP) Partitions.........................................................................30
5. mDOC H3 Modes of Operation...............................................................................................31
5.1 Reset State.......................................................................................................................32
5.2 Turbo Mode ......................................................................................................................32
5.3 Power Save Mode ............................................................................................................32
5.4 Standby Mode...................................................................................................................32
mDOC H3 Embedded Flash Drive
7 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
5.5 Deep Power-Down Mode..................................................................................................32
6. Embedded TrueFFS Technology............................................................................................34
6.1 General Description..........................................................................................................34
6.2 Operating System Support ...............................................................................................34
6.3 DOC Driver Software Development Kit (SDK)..................................................................34
6.3.1 File Management ................................................................................................................35
6.3.2 Bad-Block Management......................................................................................................35
6.3.3 Wear-Leveling .....................................................................................................................35
6.3.4 Power Failure Management ................................................................................................36
6.3.5 Error Detection/Correction ..................................................................................................36
6.3.6 Special Features through I/O Control (IOCTL) Mechanism................................................36
6.3.7 Compatibility........................................................................................................................36
6.4 128KB Memory Window ...................................................................................................38
6.5 8KB Memory Window .......................................................................................................39
7. mDOC H3 Registers ................................................................................................................40
7.1 Definition of Terms............................................................................................................40
7.2 Reset Values ....................................................................................................................41
7.3 Registers Description........................................................................................................41
7.3.1 Paged RAM Command Register.........................................................................................41
7.3.2 Paged RAM Select Register ...............................................................................................41
7.3.3 Paged RAM Unique ID Download Register ........................................................................42
7.3.4 Device Status Register........................................................................................................42
7.3.5 Device Command Register .................................................................................................43
7.3.6 Device Control Register ......................................................................................................43
7.3.7 Chip Identification (ID) Register [0:1] ..................................................................................44
7.3.8 Burst Mode Control Registers (Read & Write) ....................................................................44
7.3.9 Burst Write Mode Exit Register...........................................................................................45
7.3.10 Download Control Register .................................................................................................46
7.3.11 IPL Control Register............................................................................................................46
7.3.12 Warm Boot Register............................................................................................................47
7.3.13 Power-Down Register .........................................................................................................48
7.3.14 Power Mode Register..........................................................................................................48
7.3.15 DMA Control Register .........................................................................................................49
7.3.16 DMA Negation Register ......................................................................................................49
7.3.17 Software Lock Register .......................................................................................................50
7.3.18 Endian Control Register ......................................................................................................51
7.3.19 Version Register..................................................................................................................51
8. Booting from mDOC H3 ..........................................................................................................52
mDOC H3 Embedded Flash Drive
8 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
8.1 Introduction.......................................................................................................................52
8.1.1 Asynchronous Boot Mode ...................................................................................................53
8.1.2 Virtual RAM Boot.................................................................................................................53
8.1.3 Paged RAM Boot ................................................................................................................54
9. Design Considerations ...........................................................................................................55
9.1 General Guidelines...........................................................................................................55
9.2 Configuration and GPIO Interface ....................................................................................55
9.3 Standard NOR-Like Interface ...........................................................................................56
9.4 Multiplexed Interface.........................................................................................................57
9.5 H3 Power Supply Connectivity .........................................................................................58
9.6 Connecting Control Signals ..............................................................................................58
9.6.1 Standard Interface...............................................................................................................58
9.6.2 Multiplexed Interface ...........................................................................................................59
9.7 Implementing the Interrupt Mechanism ............................................................................59
9.7.1 Hardware Configuration ......................................................................................................59
9.7.2 Software Configuration........................................................................................................59
9.8 DMA and Burst Operation.................................................................................................60
9.8.1 DMA Operation ...................................................................................................................60
9.8.2 Burst Operation ...................................................................................................................61
9.9 Device Cascading.............................................................................................................62
9.10 Platform-Specific Issues ...................................................................................................63
9.10.1 Wait State............................................................................................................................63
9.10.2 Big and Little Endian Systems ............................................................................................63
9.10.3 Busy Signal .........................................................................................................................63
9.10.4 Working with 16/32-Bit Systems .........................................................................................64
9.11 Design Environment .........................................................................................................65
10. Product Specifications............................................................................................................66
10.1 Environmental Specifications............................................................................................66
10.1.1 Operating Temperature.......................................................................................................66
10.1.2 Thermal Characteristics ......................................................................................................66
10.1.3 Humidity ..............................................................................................................................66
10.2 Electrical Specifications.................................................................................................... 66
10.2.1 Absolute Maximum Ratings ................................................................................................66
10.2.2 Capacitance ........................................................................................................................66
10.2.3 DC Characteristics ..............................................................................................................67
10.2.4 Operating Conditions ..........................................................................................................69
10.3 Timing Specifications........................................................................................................71
mDOC H3 Embedded Flash Drive
9 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.3.1 Standard Asynchronous Read Timing ................................................................................71
10.3.2 Standard Asynchronous Write Timing ................................................................................72
10.3.3 Multiplexed Asynchronous Read Timing.............................................................................73
10.3.4 Multiplexed Asynchronous Write Timing.............................................................................74
10.3.5 Standard Burst Read Timing...............................................................................................75
10.3.6 Standard Burst Write Timing...............................................................................................76
10.3.7 Multiplexed Burst Read Timing ...........................................................................................77
10.3.8 DMA Request Timing Diagram ...........................................................................................78
10.3.9 SPI Timing...........................................................................................................................79
10.3.10 Power-Up Timing ................................................................................................................80
10.4 Mechanical Dimensions....................................................................................................82
10.4.1 mDOC H3 1Gb (128MB)/2Gb (256MB) ..............................................................................82
10.4.2 mDOC H3 4Gb (512MB)/8Gb (1GB)/ 16Gb (2GB).............................................................83
11. Ordering Information...............................................................................................................84
mDOC H3 Embedded Flash Drive
10 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
1. INTRODUCTION
This data sheet includes the following sections:
Section 1: Introduction and overview of data sheet contents
Section 2: Product overview, including a brief product description, ball diagrams and signal
descriptions
Section 3: Theory of operation for the major building blocks
Section 4: Data protection and security enabling features overview
Section 5: Detailed description of modes of operation, including power failure management
and 128KByte memory window
Section 6: Embedded TrueFFS Technology overview
Section 7: mDOC H3 register descriptions
Section 8: Overview of how to boot from mDOC H3
Section 9: Hardware and software design considerations
Section 10: Environmental, electrical, timing and product specifications
Section 11: Information on ordering mDOC H3
For additional information on msystems’ flash disk products, please contact one of the offices
listed on the back page.
mDOC H3 Embedded Flash Drive
11 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
2. PRODUCT OVERVIEW
2.1 Product Description
mDOC H3 is the latest addition to msystems’ mDOC product family. mDOC H3, packed in a
small FBGA package and offering densities ranging from 1Gb (128MB) to 16Gb (2GB), is a
hybrid device with an embedded thin flash controller and high capacity flash memory. It uses the
most advanced Flash technologies, enhanced by msystems’ proprietary TrueFFS embedded flash
management software.
All mDOC H3 devices are ball to ball compatible. The replacement of one mDOC H3 device with
another of a newer generation requires virtually no changes to the host. This makes mDOC H3 the
perfect solution for platforms and reference designs, as it allows for the utilization of more
advanced NAND Flash technology and new mDOC functionality with minimal integration
efforts.
mDOC H3 has a 32KB Programmable Boot Block. This block provides eXecute In Place (XIP)
functionality, enabling mDOC H3 to replace the boot device and to function as the only
non-volatile memory device on-board. Eliminating the need for an additional boot device reduces
hardware expenditures, board real estate, programming time, and logistics. The Paged RAM IPL
feature separates the Boot Block into sections: The first section provides constant data, while the
other sections (up to 254KB) can be downloaded with flash data. One application of this feature is
to support processors’ secure boot requirements. The Virtual RAM IPL utilizes the 32KB
physical IPL SRAM to provide XIP access to the full memory window size (either 8KB or
128KB).
msystems’ proprietary TrueFFS flash management software overcomes NAND-related error
patterns by using a robust error detection and correction (EDC/ECC) mechanism. Furthermore, it
provides performance enhancements such as multi-plane operations, DMA support, Burst
operation and Dual Data RAM buffering.
The new generation of patented flash management software, Embedded TrueFFS, is run on the
embedded thin controller of the mDOC H3 device, instead of on the host. This results in
improvements in performance, ease of integration and overall utilization of latest NAND
technologies. Embedded TrueFFS guarantees high reliability and isolates all the complexity of
flash management from the host SW.
Embedded TrueFFS enables mDOC H3 to fully emulate a hard disk to the host processor,
enabling read/write operations that are identical to a standard, sector-based hard drive. In addition,
Embedded TrueFFS employs patented methods, such as virtual mapping, dynamic and static
wear-leveling, and automatic block management to ensure high data reliability and maximize
flash life expectancy. mDOC H3 extended features are enabled by a small driver that runs on the
host side, called DOC driver. DOC driver provides the host O/S with a standard Block Device
interface, together with APIs for mDOC H3 extended features. The combination of Embedded
TrueFFS and DOC driver practically enables Plug & Play integration.
mDOC H3 offers extended content protection and security-enabling features. Up to 10 write
protected, read-and-write protected, or One Time Programmable (OTP) partitions can be
mDOC H3 Embedded Flash Drive
12 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
configured independently for maximum design flexibility. A 16-byte Unique ID (UID) identifies
each device, eliminating the need for a separate ID device on the motherboard. A new 32-bit
Random Number Generator (RNG) is also available. The RNG, in conjunction with the embedded
SW enables secured and authenticated communication with the Host CPU. The combination of
these features enables mDOC H3 to implement better security schemes to protect the code and
data it stores.
mDOC H3 can be configured to work with either standard interface or multiplexed (MUX)
interface. Using multiplexed interface where data and address lines are multiplexed reduces the
number of signals required to connect mDOC H3 to the CPU.
The combination of unique H3 design, latest NAND technology and Embedded TrueFFS results
in a low-cost, minimal-sized flash disk that achieves unsurpassed reliability levels, enhanced
performance and ease of integration.
This breakthrough in performance, size, cost and design makes mDOC H3 the ideal solution for
mobile handsets and consumer electronics manufacturers who require easy integration, fast time
to market, high-capacity, small size, high-performance and, above all, high-reliability storage to
enable multimedia driven applications such as music, photo, video, TV, GPS, games, email,
office and other applications.
mDOC H3 offers advanced power consumption management by means of optional power
consumption modes. The power consumption modes of the mDOC H3 device are designed to be
directly accessed and controlled by the chipset and OS to ensure optimal battery life in mobile
devices.
mDOC H3 can be placed in any of the following four power consumption modes:
Turbo mode - While in Turbo mode, device internal clocks are optimized for maximal
performance.
Power Save mode – While in Power Save mode, device internal clocks are optimized to
balance between device performance and power consumption.
Standby mode – While in Standby mode, the clock of most internal cores is either
disconnected or reduced to a minimum. There is no wake-up time penalty.
Deep Power Down (DPD) mode - While in Deep Power-Down mode, device quiescent
power dissipation is reduced by disabling internal high current consumers (e.g. flash,
voltage regulators, input buffers, oscillator etc.)
mDOC H3 power management mode flexibility allows for the system designers to substantially
reduce the power consumption of the mDOC device, based on the requirements of the mobile
device, to effectively and considerably prolong battery life.
mDOC H3 Embedded Flash Drive
13 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
2.2 Standard Interface
2.2.1 9x12/12x18 FBGA Ball Diagrams
Figure 2 shows the mDOC H3 9x12mm/12x18mm 115 ball standard interface ball diagram.
To ensure proper device functionality, balls marked RSRVD are reserved for future use and
should be connected as described in Table 1, section 2.2.2.
Note: mDOC H3 is designed as a ball to ball compatible with mDOC G3, G4 and H1 products, assuming that the
latter were integrated according to the migration guide guidelines. Refer to Migration Guide mDOC G3-P3
G3P3-LP G4 H1 to mDOC H3, for further information.
mDOC H3 Embedded Flash Drive
14 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
9x12/12x18 FBGA Package
Figure 2: Standard Interface Ball Diagram for 9x12 / 12x18 FBGA – Top View
D5D2D 8 D11 D14
A
9
A
13 C- LOCK#
A
2 BUSY#RSRVD
A
5
WARM
_
RST #
D4 D15D3CE # D9 D13
VCCQD 0 SCLK
RSRVD D10 VCC D12
RSRVDRSRVD RSRVDRSRVD RSRVD RSRVD RSRVDRSRVD RSRVD RSRVD
NCNC RSRVD NC
A
8VSS VCC2WE#
A
11
A
7
A
6 C+
A
12VCC1RSTIN#
A
14
A
15
A
3
SCS#
A
1 IRQ # ID0
A
4 VCCQ
A
10NCNCRSRVD
VSS D1RSRVD D6NCNC SO
NC NC NCRSRVD
NC NC NCNC
NC NC NCNC
RSRVD RSRVD RSRVD RSRVDRSRVD RSRVD RSRVD RSRVD RSRVD
RSRVD RSRVD
RSRVD
A
16
SI
VSS
RSRVD
RSRVD
RSRVD RSRVD RSRVD RSRVD
RSRVD
GPIO
_
TIMER
CLK
DMARQ#
A
0
RSRVD
VSS
OE #
D7
RSRVD
9 101 2 3 4 5 6 7 8
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mDOC H3 Embedded Flash Drive
15 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
2.2.2 9x12/12x18 FBGA Signal Description
mDOC H3 9x12mm and 12x18mm (115 ball) package ball designations are listed in the signal
descriptions, presented in logic groups, in Table 1.
Table 1: Standard Interface Signal Description
Signal Ball No.
Signal Type1 Description Signal
Direction
System Interface
A[16:15]
A[14:13]
A[12:11]
A[10:8]
A[7:4]
A[3:0]
F10, E10
E4, F4
E8, D8
G7, F7, D7
D3, E3, F3,
G3
E2, F2,
G2, H2
A[12:0] ST
A[16:13]IN/PD Address bus.
Input
D[7:6]
D[5:3]
D[2:0]
K8, H7
L7, J6, J5
L4, H4, K3
ST
Data bus, low byte.
Input/output
D[15:14]
D[13:12]
D[11:8]
J8, L8
J7, K7
L5, K4, J4,
L3
ST
Data bus, high byte.
Input/output
CE# J2 ST Chip Enable, active low. Input
OE# J3 ST Output Enable, active low. Input
WE# D6 ST Write Enable, active low Input
Configuration
GPIO_TIMER E1 ST/PU GPIO or configurable timer. Input/output
ID0 G8
PD Identification. Configuration control to support
up to two chips cascaded in the same
memory window.
Chip 1: ID0 = VSS
Chip 2: ID0 = VCCQ
Input
LOCK# F8
ST Lock, active low. When active, provides full
hardware data protection of selected
partitions.
Input
Control
WARM_RST# J9
ST/PU Warm reset input, used for triggering device
warm-reset. Active low. If not used may be
left floating.
Input
BUSY# F5
CMOS 3-STATE
Busy. Active low. Indicates that mDOC is
initializing and should not be accessed
Output
RSTIN# E5 ST/PU Reset, active low. input
mDOC H3 Embedded Flash Drive
16 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Signal Ball No.
Signal Type1 Description Signal
Direction
CLK L6 ST External clock input used for burst mode data
transfers. If not used may be left floating.
Input
DMARQ# H8
CMOS 3-STATE
DMA request. If not used may be left floating.
Output
IRQ# G9
CMOS 3-STATE Interrupt Request. Active low. If not used may
be left floating.
Output
Serial Interface
SCS# G10
ST/PU/CMOS 3-
STATE
Serial Interface chip select. Active low. If not
used may be left floating.
Input/Output
SO H10
ST/PU/CMOS 3-
STATE
Serial Interface data out (In Serial slave
mode) 2. If not used may be left floating.
Output/Input
SI J10
ST/PU/CMOS 3-
STATE
Serial Interface data in (In serial slave mode)
2. If not used may be left floating.
Input/Output
SCLK K10
ST/PU/CMOS 3-
STATE
Serial Interface clock. If not used may be left
floating.
Input/Output
Power
VCC2 D5 - Internal supply. Requires a 1µF and 0.1 µF
capacitor.
Supply
VCC1 E7 - Internal supply. Requires a 1µF capacitor. Supply
VCCQ K6, G4 - I/O power supply. Requires a 10 nF and 0.1
µF capacitor.
Supply
VCC K5 - Device supply. Requires a 0.1 µF capacitor. Supply
VSS D4, H3,
H9, K9
- Ground. All VSS balls must be connected. Supply
C+ E6 - C1 - 33nF capacitor positive terminal3. Supply
C- F6 - C1 - 33nF capacitor negative terminal3. Supply
mDOC H3 Embedded Flash Drive
17 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Signal Ball No.
Signal Type1 Description Signal
Direction
Reserved
C2, C3,
C4, C5,
C6, C7,
C8, C9,
C10, D1,
D2, D9,
D10, E9,
F1, F9,
G1, H1, J1,
K1, K2, L2,
L9, L10,
M2, M3,
M4, M5,
M6,M7,
M8, M9,
M10
-
All reserved signals are not connected
internally, and if not identified in this
document then it is recommended to leave
them floating to guarantee forward
compatibility with future products. They
should not be connected to arbitrary signals,
and must not be connected to GND
P1 ST/PU
Test Data In (JTAG).
Used for dedicated developer product only4.
Input
M1 CMOS output
Test Data Out (JTAG ).
Used for dedicated developer product only4.
Output
L1 ST/PU
Test Mode Select (JTAG)
Used for dedicated developer product only4.
Input
RSRVD
N1 ST/PU
Test Clock (JTAG).
Used for dedicated developer product only4.
Input
Mechanical
NC
A
1, A2, A9,
A10, B1,
B2, B9,
B10, , G5,
G6, H5,
H6, N2,
N9, N10,
P2, P9,
P10
-
Not Connected.
1. The following abbreviations are used: ST - Schmidt Trigger input. IN/PD – CMOS input with internal pull down resistor (77K to 312K;
135K typical), which is enabled only when 8KB memory window is in use, ST/PU - Schmitt Trigger input with internal pull up resistor
(95K to 261 K; 149 K typical).
2. When mDOC H3 is used as a Master device, SO is used for Serial Interface Data In, and SI is used for Serial Interface Data Out.
3. The 33 nF capacitor is required only for 1.8V Core and 1.8V I/O configuration. Please see section 9.5 for further details.
4. The RSRVD JTAG balls will only be enabled on special versions of the mDOC H3 devices that will be used for debugging severe system
problems. In order to support this feature, the JTAG balls should be brought out to a separate header or test points. The JTAG RSRVD
balls must not be connected to the JTAG scan chain that is used for the rest of the PCB. If not used they should be left floating.
mDOC H3 Embedded Flash Drive
18 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
2.2.3 System Interface
See Figure 3 for a simplified I/O diagram for a standard interface of mDOC H3.
Host
Host serial
control
For power connectivity please refer to mDOC H3 power supply connectivity in section 9.5.
Figure 3: Standard Interface Simplified I/O Diagram
mDOC H3 Embedded Flash Drive
19 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
2.3 Multiplexed Interface
2.3.1 9x12/12x18 FBGA Ball Diagram
Figure 4 shows the mDOC H3 9x12mm/12x18mm115 ball multiplexed interface ball diagram. To
ensure proper device functionality, balls marked RSRVD are reserved for future use and should
be connected as described in Table 2, section 2.3.2.
mDOC H3 designed as a ball to ball compatible with mDOC G3, G4 and H1 products, assuming that the latter were
integrated according to the migration guide guidelines. Refer to Migration Guide mDOC G3 -P3 G3P3-LP G4 and H1
to mDOC H3, for further information.
mDOC H3 Embedded Flash Drive
20 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
9x12/12x18 FBGA Package
Figure 4 : Multiplexed Interface Ball Diagram for 9x12/12x18 FBGA – Top View
A
D5
A
D2
A
D 8
A
D11
A
D14
VSSVSS C- LOCK# VSS BUSY#RSRVD VSS
WARM
_
RST #
A
D4
A
D15
A
D3CE #
A
D9
A
D13
VCCQ
A
D 0 SCLK
RSRVD
A
D10 VCC
A
D12
RSRVDRSRVD RSRVD RSRVD RSRVD RSRVD RSRVDRSRVD RSRVD RSRVD
NCNC RSRVD NC
VSSVSS VCC2WE# VSSVSS
VSS C+ VSSVCC1RSTIN#VSS VSS
VSS
SCS#VSS IRQ # ID0VSS VCCQ VSSNCNCRSRVD
A
VD #
A
D1RSRVD
A
D6NCNC SO
NC NC NCRSRVD
NC NC NCNC
NC NC NCNC
RSRVD RSRVD RSRVD RSRVDRSRVD RSRVD RSRVD RSRVD RSRVD
RSRVD RSRVD
RSRVD
VSS
SI
VSS
RSRVD
RSRVD
RSRVD RSRVD RSRVD RSRVD
RSRVD
GPIO
_
TIMER
CLK
DMARQ #
A
0 VSS
OE #
A
D7
RSRVD RSRVD
A
B
C
D
E
F
G
H
J
K
L
M
N
P
9 101 2 3 4 5 6 7 8
mDOC H3 Embedded Flash Drive
21 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
2.3.2 9x12/12x18 FBGA Signal Description
mDOC H3 9x12 / 12x18 FBGA related ball designations are listed in the signal descriptions,
presented in logic groups, in Table 2.
Table 2: Signal Descriptions for Multiplexed Interface
Signal Ball No.
Signal Type1Description Signal
Direction
System Interface
AD[15:12]
AD[11:8]
AD[7:4]
AD[3:0]
J8, L8, J7,
K7
L5, K4, J4,
L3
K8, H7,
L7,J6 J5, L4,
H4, K3
ST
Multiplexed bus. Address and data signals.
Input
CE# J2 ST Chip Enable, active low. Input
OE# J3 ST Output Enable, active low. Input
WE# D6 ST Write Enable, active low Input
Configuration
GPIO_TIMER E1 ST/PU GPIO or configurable timer. Input/output
AVD# H9
ST/PU Address Valid strobe. Set multiplexed
interface.
Input
ID0 G8
PD Identification. Configuration control to support
up to two chips cascaded in the same memory
window.
Chip 1: ID0 = VSS
Chip 2: ID0 = VCCQ
Input
LOCK# F8 ST Lock. Active low. When active, provides full
hardware data protection of selected partitions.
Input
Control
WARM_RST# J9
ST/PU Warm reset input, used for triggering device
warm-reset, Active low. If not used may be left
floating.
Input
BUSY# F5
CMOS 3-
STATE
Busy. Active low. Indicates that mDOC is
initializing and should not be accessed.
Output
RSTIN# E5 ST/PU Reset, active low. Input
CLK L6 ST External clock input used for burst mode data
transfers. If not used may be left floating.
Input
DMARQ# H8
CMOS 3-
STATE
DMA request. If not used may be left floating. Output
IRQ# G9
CMOS 3- Interrupt Request. Active low. If not used may Output
mDOC H3 Embedded Flash Drive
22 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Signal Ball No.
Signal Type1Description Signal
Direction
STATE be left floating.
Serial Interface
SCS# G10
ST/PU/CMOS
3-STATE
Serial Interface chip select. Active low. If not
used may be left floating.
Input/Output
SO H10
ST/PU/CMOS
3-STATE
Serial Interface data out (In Serial slave
mode)2. If not used may be left floating.
Output/Input
SI J10
ST/PU/CMOS
3-STATE
Serial Interface data in (In Serial slave mode)2.
If not used may be left floating.
Input/Output
SCLK K10
ST/PU/CMOS
3-STATE
Serial Interface clock. If not used may be left
floating.
Input/Output
Power
VCC2 D5 - Internal supply. Requires a 1µF and 0.1 µF
capacitor.
Supply
VCC1 E7 - Internal supply. Requires a 1µF capacitor. Supply
VCCQ K6, G4 - I/O power supply. Requires a 10 nF and 0.1 µF
capacitor.
Supply
VCC K5 - Device supply. Requires a 0.1 µF capacitor. Supply
VSS D3, D4, D7,
D8, E2, E3,
E4 E8, E10,
F2, F3, F4,
F7, F10, G2,
G3, G7, H3,
K9,
- Ground. All VSS balls must be connected. Supply
C+ E6 - C1 - 33nF capacitor positive terminal3. Supply
C- F6 - C1 - 33nF capacitor negative terminal3. Supply
mDOC H3 Embedded Flash Drive
23 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Signal Ball No.
Signal Type1Description Signal
Direction
Reserved
C2, C3, C4,
C5, C6, C7,
C8, C9,
C10, D1,
D2, D9,
D10, E9, F1,
F9, G1, H1,
J1, K1, K2,
L2, L9, L10,
M2, M3, M4,
M5, M6,M7,
M8, M9,
M10
-
All reserved signals are not connected
internally, and if not identified in this document
then it is recommended to leave them floating
to guarantee forward compatibility with future
products. They should not be connected to
arbitrary signals.
P1 ST/PU Test Data In (JTAG).
Used for dedicated developer product only4.
Input
M1 CMOS output Test Data Out (JTAG ).
Used for dedicated developer product only4.
Output
L1 ST/PU Test Mode Select (JTAG)
Used for dedicated developer product only4.
Input
RSRVD
N1 ST/PU Test Clock (JTAG).
Used for dedicated developer product only4.
Input
Mechanical
NC
A1, A2, A9,
A
10, B1, B2,
B9, B10,
G5, G6, H5,
H6, N2, N9,
N10, P2, P9,
P10
-
Not Connected.
1. The following abbreviations are used: ST - Schmidt Trigger input. IN/PD – CMOS input with internal pull down resistor (77K to 312K;
135K typical), which is enabled only when the 8KB memory window is in use, ST/PU - Schmitt Trigger input with internal pull up resistor
(95K to 261 K; 149 K typical).
2. When mDOC H3 is used as a Master device, SO is used for Serial Interface Data In, and SI used for Serial Interface Data Out.
3. The 33 nF capacitor is required only for 1.8V Core and 1.8V I/O configuration. Please see section 9.5 for further details.
4. The RSRVD JTAG balls will only be enabled on special versions of the mDOC H3 devices that will be used for debugging severe system
problems. In order to support this feature, the JTAG balls should be brought out to a separate header or test points. The JTAG RSRVD
balls must not be connected to the JTAG scan chain that is used for the rest of the PCB. If not used they should be left floating.
mDOC H3 Embedded Flash Drive
24 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
2.3.3 System Interface
See Figure 5 for a simplified I/O diagram of multiplexed interface mDOC H3.
For power connectivity please refer to mDOC H3 power supply connectivity in section 9.5.
Figure 5: Multiplexed Interface Simplified I/O Diagram
mDOC H3 Embedded Flash Drive
25 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
3. THEORY OF OPERATION
3.1 Overview
mDOC H3 consists of the following major functional blocks, as shown in Figure 6.
Figure 6: Simplified Block Diagram
These components are described briefly below and in more detail in the following sections.
Host IF – Host physical interface block. Composed of the following interfaces:
Standard, Multiplexed, and Serial.
Host Agent – Logical host interface supporting the host protocol and Programmable
Boot Block with XIP functionality.
Flash Partition Management – High level management of the Flash media,
managing flash logical partitions, and their attributes.
Flash BD Management – Management of the Flash media at a Block Device level,
primarily performing logical to physical address translation.
Boot Agent – Management of host boot sequence – Loading of Boot code from flash
media upon power up.
ECC / EDC - Error Detection and Error Correction Codes (EDC/ECC) - On-the-fly
Flash error handling.
Data Buffer – 4KB DPRAM memory, used as a pipeline buffer, for enhanced data
transfer rate.
mDOC H3 Embedded Flash Drive
26 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Flash Agent – Provides High level Flash management functions and sequences for
Flash control and error condition handling.
Flash IF – Physical interface to the Flash Media.
Power and Timing – Analog and clock circuits to provide power and timing for the
H3 controller and flash.
Embedded CPU – Runs Embedded TrueFFS SW and mDOC H3 Controller
operating SW.
3.2 Host Interface
3.2.1 Standard (NOR-Like) Interface
The host interface block provides an easy-to-integrate NOR-like (also SRAM and EEPROM-like)
interface to mDOC H3, enabling various CPU interfaces, such as a local bus, ISA bus, NOR
interface, SRAM interface, EEPROM interface or any other compatible interface. In addition, the
EEPROM-like interface enables direct access to the Programmable Boot Block to permit XIP
(Execute-In-Place) functionality during system initialization.
A1-A16 address lines enable access to the mDOC H3 128KB memory window. When migrating
from mDOC G3/G4/H1 without changing the PCB, thus using only A1-A12 address lines, mDOC
H3 exports 8KB memory window, like in mDOC G3/G4 and H1.
The Chip Enable (CE#), Write Enable (WE#) and Output Enable (OE#) signals trigger read and
write cycles. A write cycle occurs while both the CE# and the WE# inputs are asserted. Similarly,
a read cycle occurs while both the CE# and OE# inputs are asserted. Note that mDOC H3 does
not require a clock signal. It features a unique analog static design, optimized for minimal power
consumption. The CE#, WE# and OE# signals trigger the controller (e.g., system interface block,
bus control and data pipeline) and flash access.
The Reset-In (RSTIN#) and Busy (BUSY#) control signals are used in the reset phase.
WARM_RST# signal (warm reset) is used to reset the Host IF and enter a predefined reset
scenario of mDOC H3.
The Interrupt Request (IRQ#) signal is used to indicate completion of operations. Using this
signal frees the CPU to run other tasks, continuing read/write operations with mDOC H3 only
after the IRQ# signal has been asserted and an interrupt handling routine (implemented in the OS)
has been called to return control to the DOC driver.
The DMARQ# output is used to control DMA operations, and the CLK input is used to support
Burst operation when reading flash data. See Section 10.3 for further information.
3.2.2 Multiplexed Interface
In this configuration, the address and data signals are multiplexed. The AVD# input is driven by
the host AVD# signal, and the D[15:0] balls, used for both address inputs and data, are connected
to the host AD[15:0] bus. While AVD# is asserted, the host drives AD[15:0] with bits [16:1] of
the address.
This interface is automatically used when a falling edge is detected on AVD#. This edge must
occur after RSTIN# is de-asserted and before the first read or write cycle to the controller.
mDOC H3 Embedded Flash Drive
27 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
3.2.3 Serial Interface
The Serial interface (SPI) provides mDOC H3 a secondary interface with debug and
programming capabilities. mDOC H3 SPI Interface is configured as Slave. All four combinations
of clock phase (CPHA) and clock polarity (CPOL) defined by the SPI specification are supported.
The Serial interface supports two usage scenarios:
1. Debug port: Allowing the host with an SPI interface to read debug messages.
2. Format and Program port: Allowing a programmer to use this port in order to format and
program the device.
The serial protocol debug port provides a means for the serial interface (SPI Slave) to queue and
transmit debug messages to a host which supports an SPI interface.
All transfers are performed in multiples of 8 bits, with the MSB of each byte transmitted first.
3.3 Host Agent
3.3.1 Host Protocol
Block of registers and logic required for implementing block device operations over the host
interface. This block implements a set of complex transactions required for operating the mDOC
H3 device. These transactions include data storage operations as well as device configuration and
management.
3.3.2 Boot Block (XIP)
The Programmable Boot Block with XIP functionality enables mDOC H3 to act as a boot device
(in addition to performing flash disk data storage functions). This eliminates the need for
expensive, legacy NOR flash or any other boot device on the motherboard.
The Programmable Boot Block is 32KB in size. The Boot Agent, described in the next section,
expands the functionality of this block by copying the boot code from the flash into the boot
block.
3.4 Boot Agent
Upon power-up or when the RSTIN# signal is de-asserted, the Boot Agent automatically
downloads the Initial Program Loader (IPL) to the Programmable Boot Block. The IPL contains
the code for starting the Host boot process. The download process is quick, and is designed so that
when the CPU accesses mDOC H3 for code execution, the IPL code is already located in the
Programmable Boot Block. During the download process, mDOC H3 does not respond to read or
write accesses. Host systems must therefore observe the requirements described in Section
10.3.10.
During the download process, mDOC H3 asserts the BUSY# signal to indicate to the system that
it is not yet ready to be accessed. Once BUSY# is de-asserted, the system can access mDOC H3.
Note that after IPL is loaded and BUSY# is de-asserted, the Boot Agent continues to download
the embedded TrueFFS from Flash to the mDOC H3 internal RAM, and then executes it.
Downloading the embedded TrueFFS is done in parallel to the host system accessing the IPL
code. During the time between BUSY# signal de-assertion and Embedded TrueFFS load
mDOC H3 Embedded Flash Drive
28 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
completion, mDOC H3 will respond only to accesses to the XIP Boot Block (including Paged or
Virtual RAM accesses) in order to facilitate completion of the IPL execution.
Once Embedded TrueFFS is loaded, executed and completed its media mount process, mDOC H3
is ready to be used as a fully functional storage device.
3.5 Error Detection Code / Error Correction Code (EDC/ECC)
Since NAND-based flash is prone to errors, it requires unique error-handling capabilities to
ensure required reliability. msystems’ TrueFFS technology, embedded within mDOC H3,
includes a 6-bit Error Detection Code / Error Correction Code (EDC/ECC), based on the Bose,
Chaudhuri and Hocquenghem (BCH) algorithm. Both EDC and ECC are implemented in
hardware to optimize performance.
Each time a 512-byte sector is written, additional parity bits are calculated and written to the
flash. Each time data is read from the flash, the parity bits are read and used for calculating error
locations.
The BCH algorithm can detect and correct 6 errors per 512 Bytes, and in case of higher error
rates, will identify and notify a corrupted sector in very high probability. It ensures that the
minimal amount of code is used for detection and correction to deliver the required reliability
without degrading performance.
3.6 Block Device Management
Block device management is performed by an embedded SW module, responsible for execution
of all Block Device operations, such as address calculation, erase, read and writes operations etc.
This module translates these operations from virtual media terms (i.e. sector addresses) to flash
media terms (i.e. flash planes, blocks and pages).
These Block Device operations are typically initiated by the host File System, translated by the
DOC Driver and sent to the device over the host interface. The Host Agent (above) is responsible
for capture and transfer to the Block Device management.
mDOC H3 Embedded Flash Drive
29 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
4. DATA PROTECTION AND SECURITY-ENABLING FEATURES
4.1.1 Read/Write-Protected partitions
Data and code protection is implemented on a per-partition basis. The user can configure each
partition as read protected, write protected, or read and write protected.
A protected partition may be protected by either/both of these mechanisms:
Up to 128-byte protection key
Hard-wired LOCK# signal
Sticky lock (SLOCK)
In order to set or remove read/write protection, the protection key must be used as follows:
Insert the protection key to remove read/write protection
Remove the protection key to set read/write protection
The only way to read or write from/to a partition that is protected against read or write, is to insert
the key. This is also true for modifying its attributes (protection key, read, write and lock).
Read/write access is disabled (the key is automatically removed) in each of the following events:
Power-down
Removal of the protection key
For further information on protection, please refer to the DOC Driver Software Development Kit
(SDK) developer guide.
4.1.2 LOCK# signal
mDOC H3 has an additional hardware safety measure. If the Lock option is enabled for a specific
partition, and the LOCK# signal is asserted, the protected partition has an additional hardware
lock that prevents read/write access to the partition, even with the use of the correct protection
key.
4.1.3 Sticky Lock (SLOCK)
It is possible to set the Lock protection for one session only; that is, until the next power-up or
reset. This Sticky Lock feature can be useful when the boot code in the boot partition must be
read/write protected. Upon power-up, the boot code must be unprotected so the CPU can run it
directly from mDOC H3. At the end of the boot process, protection can be set until the next
power-up or reset. This is done by setting the Sticky Lock (SLOCK) bit in the Software Lock
register,or using a dedicated S/W API, and has the same effect as asserting the LOCK# signal.
Once set, SLOCK can only be cleared by asserting the RSTIN# input. Like the LOCK# input,
assertion of this bit prevents the protection key from disabling the protection for a given partition.
There is no need to mount the partition prior to this operation.
4.1.4 Unique Identification (UID) Number
Each mDOC H3 is assigned a 16-byte UID number. Burned onto the flash during production, the
UID cannot be altered and is worldwide unique. The UID is essential for security-related
mDOC H3 Embedded Flash Drive
30 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
applications, and can be used to identify end-user products in order to fight fraudulent duplication
by imitators.
4.1.5 One-Time Programmable (OTP) Partitions
OTP feature is implemented on a per-partition basis, for full flexibility. Once a partition has been
defined as OTP (upon initial media-formatting), it can be written only once, after which it is
automatically and permanently locked. After it is locked, the OTP partition becomes read only,
just like a ROM device.
Regardless of the state of any of the LOCK options, OTP partitions cannot be erased.
Typically, the OTP partition is used to store customer and product information such as: product
ID, software version, production data, customer ID, PKI keys, service provider information and
tracking information.
mDOC H3 Embedded Flash Drive
31 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
5. MDOC H3 MODES OF OPERATION
Figure 7 shows the different modes of mDOC H3 device operation and the interchange between
optional modes.
mDOC H3 can operate in any one of five basic power modes/states:
Reset state
Turbo mode
Power save mode
Standby mode
Deep Power-Down mode
Figure 7: Operation Modes State Machine
mDOC H3 Embedded Flash Drive
32 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
The above power modes are separated into two main groups:
Work mode group – in which the device is active and performs various transactions.
Idle mode group – in which the device is not active.
The power mode is determined as follows:
Assertion of the RSTIN# signal sets the device in Reset state.
Upon power up the device enters its pre-configured work mode.
Default work mode is Turbo mode. The default can be changed to PowerSave mode and vice-
verse using S/W API.
Once in any idle mode the device will move to work mode upon any transaction. It may return
to idle mode upon inactivity, if so configured.
Entry and exit to/from Deep Power-Down mode is described below.
5.1 Reset State
While in Reset State, mDOC H3 ignores all write transactions and returns unknown value upon
read transactions.
5.2 Turbo Mode
This mode is defined as a "work mode" and is optimized for performance. All internal clocks are
set to maximal work frequency.
In this mode all standard operations involving the flash memory can be performed.
5.3 Power Save Mode
This mode defined as a "work mode" and is optimized for balance between power consumption
and performance. Balance is achieved by setting internal clocks to predefined optimal settings.
In this mode all standard operations involving the flash memory can be performed.
5.4 Standby Mode
mDOC H3 enters standby mode upon device inactivity. In Standby mode the clock of most
internal cores is either disconnected or reduced to a minimum. There is no wake-up time penalty
when switching back to working mode.
5.5 Deep Power-Down Mode
While in Deep Power-Down mode, the quiescent power dissipation of the mDOC H3 device is
reduced by disabling internal high current consumers (e.g. voltage regulators, input buffers,
oscillator etc.)
Entering Deep Power-Down mode is done by either of the following:
Writing to POWER_DN bit in the Power Mode Register
Activating a SW API to put the device immediately in DPD
Setting Auto DPD mode by SW – The device will enter DPD upon device inactivity
mDOC H3 Embedded Flash Drive
33 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Entering Deep Power-Down mode and then returning to the previous mode does not affect the
value of any register.
Exiting Deep Power-Down mode is done using one of the following methods:
Performing a read/write access from/to mDOC H3
Asserting the RSTIN# input
mDOC H3 Embedded Flash Drive
34 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
6. EMBEDDED TRUEFFS TECHNOLOGY
6.1 General Description
msystems’ patented TrueFFS technology was designed to maximize the benefits of flash memory
while overcoming inherent flash limitations that would otherwise reduce its performance,
reliability and lifetime. TrueFFS emulates a hard disk making flash transactions completely
transparent to the OS. In addition, since DOC driver operates under the OS file system layer, and
exports standard Block Device API, it is completely transparent to the application.
TrueFFS is now embedded within the mDOC H3 device, eliminating the need for complicated
software integrations and enabling a practically Plug & Play integration with the system. mDOC
H3 with Embedded TrueFFS handles all the complexity of flash management for the host SW.
This dramatically simplifies software integration and test. It also allows for cost reductions to be
achieved in projects using mDOC by upgrading to newer generations of mDOC devices based on
newer and more cost effective NAND technologies. The embedded flash management offered by
TrueFFS assures that software on the host system or mass production tools need not to be
changed or re-qualified when flash technology is changed.
mDOC SW support includes:
Drivers support for all major OSs
DOC driver Software Development Kit (DOC driver SDK)
TrueFFS 7.1 Software Development Kit (TrueFFS 7.1 SDK) – One SW package to support
both earlier mDOC technologies (such as G3, G4 and H1) and mDOC H3.
Support for all major CPUs, including 16 and 32-bit bus architectures
Embedded TrueFFS technology features:
Flash management
Bad-block management
Dynamic virtual mapping
Dynamic and static wear-leveling
Power failure management
Implementation of EDC/ECC
Performance optimization
6.2 Operating System Support
The DOC driver is integrated into all major OSs, including Symbian, Microsoft Windows Mobile,
Windows CE, Linux, VxWorks and others. For a complete listing of all available drivers, please
contact your local msystems sales office or distributor.
6.3 DOC Driver Soft ware Development Kit (SDK)
DOC driver Software Development Kit (SDK) provides the source code for the DOC driver. It can
be used in an OS-less environment or when special customization of the driver is required for
mDOC H3 Embedded Flash Drive
35 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
proprietary OSs. The DOC driver SDK is used also for utilizing mDOC H3 as the boot device.
TrueFFS 7.1 Software Development Kit (TrueFFS 7.1 SDK) provides the DOC driver code,
bundled with the TrueFFS code needed to support earlier mDOC technologies (such as G3, G4
and H1) as well.
6.3.1 File Management
DOC driver accesses the flash memory within mDOC H3 through either 8KB or 128KB window
in the CPU memory space, depending on the mDOC H3 configuration. mDOC driver provides
block device API by using standard file system calls, identical to those used for a hard disk, to
enable reading from and writing to mDOC H3. This makes mDOC H3 compatible with any file
system and file system utilities, such as diagnostic tools and applications.
Note: mDOC H3 is shipped unformatted and contains virgin media.
6.3.2 Bad-Block Management
Since NAND flash is an imperfect storage media, it can contain bad blocks that cannot be used
for storage because of their high error rates. Embedded TrueFFS automatically detects and maps
out bad blocks upon system initialization, ensuring that they are not used for storage. This
management process is completely transparent to the user, who is unaware of the existence and
location of bad blocks, while remaining confident of the integrity of data stored.
6.3.3 Wear-Leveling
Flash memory can be erased a limited number of times. This number is called the erase cycle
limit, or write endurance limit, and is defined by the flash device vendor. The erase cycle limit
applies to each individual erase block in the flash device.
In a typical application, and especially if a file system is used, specific pages are constantly
updated (e.g., the pages that contain the FAT, registry, etc.). Without any special handling, these
pages would wear out more rapidly than other pages, reducing the lifetime of the entire flash.
To overcome this inherent deficiency, Embedded TrueFFS uses msystems’ patented wear-
leveling algorithm. This wear-leveling algorithm ensures that consecutive writes of a specific
sector are not written physically to the same page in the flash. This spreads flash media usage
evenly across all pages, thereby maximizing flash lifetime.
Dynamic Wear-Leveling
Embedded TrueFFS uses statistical allocation to perform dynamic wear-leveling on newly written
data. This means that new data will be written to flash units which are less worn out.
Static Wear-Leveling
Areas on the flash media may contain static files, characterized by blocks of data that remain
unchanged for very long periods of time, or even for the whole device lifetime. If wear-leveling
were only applied on newly written pages, static areas would never be cycled. This limited
application of wear-leveling would lower life expectancy significantly in cases where flash
memory contains large static areas. To overcome this problem, Embedded TrueFFS forces data
transfer in static areas as well as in dynamic areas, thereby applying wear-leveling to the entire
media.
mDOC H3 Embedded Flash Drive
36 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
6.3.4 Power Failure Management
Embedded TrueFFS uses algorithms based on “erase after write” instead of "erase before write" to
ensure data integrity during normal operation and in the event of a power failure. Used areas are
reclaimed for erasing and writing the flash management information into them only after an
operation is complete. This procedure serves as a check on data integrity.
The “erase after write” algorithm is also used to update and store mapping information on the
flash memory. This keeps the mapping information coherent even during power failures. The only
mapping information held in RAM is a table pointing to the location of the actual mapping
information. This table is reconstructed during power-up or after reset from the information stored
in the flash memory.
To prevent data from being lost or corrupted, Embedded TrueFFS uses the following
mechanisms:
When writing, copying, or erasing the flash device, the data format remains valid at all
intermediate stages. Previous data is never erased until the operation has been completed and
the new data has been verified.
A data sector cannot exist in a partially written state. The operation is either successfully
completed, in which case the new sector contents are valid, or the operation has not yet been
completed or has failed, in which case the old sector contents remain valid.
6.3.5 Error Detection/Correction
Embedded TrueFFS implements a unique Error Correction Code (ECC) algorithm to ensure data
reliability. Refer to Section 3.5 for further information on the EDC/ECC mechanism.
6.3.6 Special Features through I/O Control (IOCTL) Mechanism
In addition to standard storage device functionality, the DOC driver provides extended
functionality. This functionality goes beyond simple data storage capabilities to include features
such as: formatting the media, read/write protection, boot partition(s) access and other options.
This unique functionality is available in all DOC drivers through the standard I/O control
command of the native file system.
6.3.7 Compatibility
Migrating from mDOC G3/G4/H1 and mDOC G3/G4 -based MCP to mDOC H3 and mDOC H3 -
based MCP can be done by TrueFFS 7.1.
TrueFFS 7.1 supports all mDOC product line including mDOC G3/G4/H1 and mDOC H3.
DOC driver 1.0 and higher provides stand alone SW support for mDOC H3 only. It does not
support mDOC G3/G4 and H1.
When using different software modules (e.g. Block Device DOC driver, Boot application,
formatting utilities, etc.) to access mDOC H3 it is crucial to verify that all software modules are
based on the same code base version. It is also important to use only tools (e.g. DOCFORMAT,
DOCINFO, DOCGETIMAGE, DOCPUTIMAGE, etc.) from the same version as the DOC
drivers used by the application. Failure to do so may lead to unexpected results, such as lost or
mDOC H3 Embedded Flash Drive
37 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
corrupted data. The driver version can be verified by the sign-on messages displayed, or by the
version information presented by the driver or tool.
mDOC H3 Embedded Flash Drive
38 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
6.4 128KB Memory Window
mDOC H3 driver utilizes a 128KB memory window in the CPU address space, consisting of four
32KB sections as depicted in Figure 8. The addresses described here are relative to the absolute
starting address of the 128KB memory window.
The 32KB Programmable Boot Block (XIP) is aliased to section 0, 2 and 3. The sections are
aligned to addresses 00000H, 10000H and 18000H additionally the second half of section 1
contains the second half of the IPL. This is done in order to enable additional flexibility in the
IPL addressing schemes.
Address 8000H + offset is the base address for the mDOC H3 registers used for communication
with the mDOC H3 device (excluding the Paged RAM Registers).
IPL RAM
(Host XIP)
00000h
32K
128K window
IPL RAM – Upper Area
(Host XIP)
IPL RAM Alias
(Host XIP)
IPL RAM Alias
(Host XIP)
10000h
18000h
32K
32K
0C000h
16KH3 Registers
16K
08000h
1FFFFh
Figure 8: mDOC H3 128KB Memory Map
mDOC H3 Embedded Flash Drive
39 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
6.5 8KB Memory Window
For the purposes of backward compatibility, mDOC H3 can present an 8KB memory window in
the CPU address space, depicted in Figure 9. The addresses described here are relative to the
absolute starting address of the 8KB memory window.
The 2KB Programmable Boot Block (XIP) in section 0 is aligned to address 0000H.
Address 0800H + Offset is the base address for the H3 registers used for communication with the
mDOC H3 device (excluding the Paged RAM registers).
IPL RAM
(Host XIP)
0000h
2K
8K window
IPL RAM Alias
(Host XIP)
1800h
4K
2K
H3 Registers
0800h
1FFFh
Figure 9: mDOC H3 8KB Memory Map
mDOC H3 Embedded Flash Drive
40 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
7. MDOC H3 REGISTERS
This section describes various mDOC H3 registers and their functions.
Table 3: mDOC H3 Registers
Address (Hex)
128KB Windo w Address (Hex)
8KB Window Width
(Bits) Register Name
0030 8 Paged RAM command
0070 8 Paged RAM Select
0080 8 Paged RAM Unique ID Download
800E 080E 8 Device Status
800E 080E 8 Device Command
801C 081C 8 Device Control
9400/9422 1400/1422 16 Chip Identification [0:1]1
9402/9424 1402/1424 16 Burst Write/Read Mode Control1
9404 1404 16 Burst Write Mode Exit1
9406 1406 16 Download Control1
9408 1408 16 IPL Control1
940A 140A 16 Warm Boot1
940C 140C 16 Power Down1
9416 1416 16 Power Mode1
940E 140e 16 DMA Control1
9418 1418 16 DMA Negation1
9410 1410 16 Software Lock1
9412 1412 16 Endian Control1
941A 141A 16 Version Register1
Note: This register cannot be accessed when A0 signal is pulled high. Therfore it is recommended that A0 will be connected to host CPU A0, or
to VSS.
7.1 Definition of Terms
The following abbreviations and terms are used within this section:
RFU Reserved for future use. This bit is undefined during a read cycle and “don’t care”
during a write cycle.
RFU_0 Reserved for future use; when read, this bit always returns the value 0; when
written, software should ensure that this bit is always set to 0.
RFU_1 Reserved for future use; when read, this bit always returns the value 1; when
written, software should ensure that this bit is always set to 1.
Reset Value Refers to the value immediately present after moving from Reset State to one of
the work modes.
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41 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
7.2 Reset Values
The Reset value written in the register description is the register value after mDOC H3 moves out
from Reset state and enters one of the Work modes. Registers for which a value is not defined
after moving from Reset State to one of the work modes, are marked by an N/A reset value.
7.3 Registers Description
This section describes various mDOC H3 registers and their functions.
7.3.1 Paged RAM Command Register
Description: This 8-bit register is used to enable Write to other Paged RAM registers.
Address (hex): 0030 (both 8KB window and 128KB Window)
Type: Write
D7 D6 D5 D4 D3 D2 D1 D0
Read/Write W W W W W W W W
Bit Name COMMAND
Reset Value N/A
Bit No. Description
COMMAND COMMAND The value 71H must be written to enable a subsequent write cycle to the
Paged RAM Page Select register. All other values: Reserved.
Note: This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
7.3.2 Paged RAM Select Register
Description: This 8-bit register is used to initiate a download operation of the specified 1KB
page. If the value 71H is not written to the Paged RAM Command register
immediately before writing this register, the write cycle will be ignored.
Address (hex): 0070 (both 8KB window and 128KB Window)
Type: Write
D7 D6 D5 D4 D3 D2 D1 D0
Read/Write W W W W W W W W
Description SEQ PAGE
Reset Value N/A 00H
Bit No. Description
SEQ Sequential indication. Setting this bit initiates a download from the NEXT_PAGE pointer
of the previously downloaded page. The value written to the PAGE field is ignored.
PAGE Only significant when writing a 0 to the SEQ field. Only value 00H is supported.
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42 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
PAGE value of 00H loads the same data as in hardware or software reset.
Note: This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
7.3.3 Paged RAM Unique ID Download Register
Description: Writing to this 8 bit register initiates a download of the 16-byte Unique
Identification (UID) number to offset 0 of the downloadable section of the IPL
RAM. After polling for ready status, the requested data may be read from the
IPL RAM.
Writes to this register will be ignored if the prior bus cycle was not a write cycle
to the Paged RAM Command Register with data 71H (intervening RAM read
cycles are allowed).
Address (hex): 0080 (both 8KB window and 128KB Window)
Type: Write
D7-D0
Read/Write W
Bit Name RFU_0
Reset Value N/A
7.3.4 Device Status Register
Description: This 8-bit register holds the status of the last command executed by the device,
upon command completion.
Address (hex): 800E (128KB window) / 080E (8KB window)
Type: Read
Bit number D7 D6 D5-D4 D3 D2-D1 D0
Read/Write R/W R/W R/W R/W R/W R/W
Bit name BSY DRDY RFU DRQ RFU ERR
Reset value 0 0 0 0 0 0
BSY Device Busy indication.
0: Device not busy
1: Device Busy
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43 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
DRDY Device Ready indication.
0: Device not ready
1: Device Ready
DRQ Data Request. .
0: Not ready to transfer data.
1: Ready to transfer data.
ERR Error bit.
0: No error has occurred.
1: An error has occurred during execution of the previous command.
7.3.5 Device Command Register
Description: This 8-bit register contains the command code being sent to the device.
Address (hex): 800E (128KB window) / 080E (8KB window)
Type: Write
Bit number D7-D0
Read/Write W
Bit name COMMAND_CO DE
Reset value 0
7.3.6 Device Control Register
Description: This 8-bit register allows a host to software-reset the device and to enable or
disable the assertion of the IRQ# signal.
Address (hex): 801C (128KB window) / 081C (8KB window)
Type: Read / Write
Bit number D7-D3 D2 D1 D0
Read/Write R R/W R/W R
Bit name RFU SRST nIEN RFU
Reset value 0 0 0 0
SRST Perform device Software reset.
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44 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
nIEN Interrupt enable (to the host):
0: Interrupt enable
1: Interrupt Disable
7.3.7 Chip Identification (ID) Register [0:1]
Description: These two 16-bit registers are used to identify the mDOC device residing on the
host platform. They always return the same value.
Chip Identification Register [1] holds the bit inverse of Chip Identification
Register [0].
Address (hex): 128KB window: 9400 / 9422
8KB window 1400 / 1422
Type: Read only
D15-D0
Read/Write R
Bit Name ChipID / ChipID inverse
Reset Value Chip Identification Register[0]: 4833H
Chip Identification Register[1] – bit inverse: B7CCH
Note: This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to the Host CPU A0, or to VSS.
7.3.8 Burst Mode Control Registers (Read & Write)
Description: These 16 bit registers contain the parameters for the burst transactions.
There is one register for burst write and one for burst read. The structure of both
registers is the same.
Address (hex): 128KB window: 9424 (Burst Read) / 9402 (Burst Write)
8KB window: 1424 (Burst Read) / 1402 (Burst Write)
Type: Read / Write
D15-D14 D13 D12-D11 D10-D8 D7-D6 D5-D4 D3-D2 D1 D0
Read/Write R R/W R/W R/W R R R R/W R
Bit name RFU HOLD LENGTH LATENCY RFU WAIT_STATE RFU BST_EN RFU
Reset value 0 0 0 0 0 0 0 0 0
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45 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
HOLD Specifies if the data output/input on D [15:0] during burst mode read/write
cycles should be held for one or two clock cycle.
0: Data is held for one clock cycle.
1: Data is held for two clock cycles.
LENGTH Specifies the number of words to be transferred in each burst cycle, as follows:
0: 4 Words
1: 8 Words
2: 16 Words
3: 32 Words
LATENCY Controls the number of clock cycles between assertion of CE# and availability
of the first word of data to be latched by the host. The number of clock cycles is
equal to 2 + LATENCY.
If HOLD = 1, then the data is available to be latched on this clock and on the
subsequent clock.
WAIT_STATE The number of clocks from the [N-1] access until the assertion of CE#.
0: When host reads word N there is no CLK.
1: When host reads word N there is CLK
2-3: After the host reads word N there are 1 or 2 additional clocks until CE#
deassertion.
Note: In Burst write the wait states start from the N word.
BURST_EN Enables burst mode cycles.
0: Burst mode is disabled.
1: Burst mode is enabled.
Note: 1. This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
2. Burst mode can only be used in conjunction with mDOC H3 DMA functionality.
7.3.9 Burst Write Mode Exit Register
Description: Write to this 16-bit register takes the device out of Burst Write mode
Address (hex): 9404 (128KB window) / 1404 (8KB window)
Type: Write
D15-D0
Read/Write W
Bit Name RFU
Reset Value N/A
mDOC H3 Embedded Flash Drive
46 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Note: 1. This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
2. Burst mode can only be used in conjunction with mDOC H3 DMA functionality.
7.3.10 Download Control Register
Description: This 16-bit register provides the status of IPL download from flash to internal
boot block.
Host can poll this register after reset until DOWNLOAD_RUN is cleared.
Address (hex): 9406 (128KB window) / 1406 (8KB window)
Type: Read Only
Bit number D15-D1 D0
Read/Write R R
Bit name RFU DOWNLOAD_RUN
Reset value 0 1
DOWNLOAD_RUN Is IPL downloading in progress?
0: Download process was completed.
1: Download process is still in progress
Note: This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
7.3.11 IPL Control Register
Description: This 16-bit register controls the IPL window.
Address (hex): 9408 (128KB window) / 1408 (8KB window)
Type: Read / Write
Bit number D15 -D 6 D5-D4 D3-D2 D1 D0
Read/Write R R/W R R/W R
Bit name RFU CLOSE_IPL_CS RFU IPL_WR_EN IPL_WR_RDY
Reset value 0 0 0 0 0
CLOSE_IPL_CS Enables the host to shut down part or whole of mDOC H3 XIP block.
This feature is used after the boot has finished, saving power
mDOC H3 Embedded Flash Drive
47 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
consumption of mDOC H3 internal RAM (Boot Block).
00: Whole XIP block is enabled.
01: Shut the lower 16 KB of the physical XIP block.
10: Shut the upper 16KB of the physical XIP block.
11: Shut the entire 32KB of the physical XIP block.
IPL_WR_EN This bit enables writing to the IPL window. Setting this bit is enabled
only after device sets IPL_WR_RDY.
0: Write disable
1: Write enable
IPL_WR_RDY This bit is used by the device to indicate whether IPL window can be
written by the HOST.
0: IPL window is not ready for writing.
1: IPL window is ready for writing.
Note: This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
7.3.12 Warm Boot Register
Description: This 16-bit register is used to configure the warm reset input.
Address (hex): 940A (128KB window) / 140A (8KB window)
Type: Read / Write
Bit number D15-D2 D1 D0
Read/Write R R/W R/W
Bit name RFU BURST_ON WARM_RST_POL
Reset value 0 0 0
BURST_ON This bit indicates if the BURST_EN bits (Burst Mode Control
Registers) should be reset on warm boot detection.
0: Reset BURST_EN bits
1: BURST_EN bits unchanged
WARM_RST_POL This bit indicates the warm reset pin polarity
0: Active low
1: Active high
mDOC H3 Embedded Flash Drive
48 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Note: This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
7.3.13 Power-Down Register
Description: This 16-bit register controls the device response to the DPD input signal.
Address (hex): 940C (128KB window) / 140C (8KB window)
Type: Read / Write
Bit number D15-D9 D8 D7-D0
Read/Write R R/W R
Bit name RFU WAKE_UP_SEL_BIT RFU
Reset value 0 0 0
WAKE_UP_SEL_BIT Selects the device wake up trigger
0: mDOC H3 CE# is the wakeup trigger.
1: Read access (CE# & OE# assertion) or write access (CE# and
WE# assertion) is the wakeup trigger.
7.3.14 Pow er Mode Register
Description: This 16-bit register is used to put mDOC H3 into Deep Power Down mode.
Address (hex): 9416 (128KB window) / 1416 (8KB window)
Type: Read / Write
Bit number D15-D1 D0
Read/Write R W
Bit name RFU POWER_DN
Reset value 0 0
POWER_DN Setting this bit to ‘1’ will put the device to Deep Power Down mode.
Note: This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
mDOC H3 Embedded Flash Drive
49 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
7.3.15 DMA Control Register
Description: This 16-bit register controls the DMA_REQ signal to the host.
Address (hex): 940E (128KB window) / 140E (8KB window)
Type: Read / Write
Bit number D15-D9 D8-D4 D3 D2 D1 D0
Read/Write R R/W R R/W R/W R/W
Bit name RFU PULSE_WIDTH RFU EDGE DMA_POL DMA_EN
Reset value 0 4 0 0 1 0
PULSE_WIDTH The width of the DMARQ# signal will be:
PULSE_WIDTH * ICMU_CLK (cycle). Maximum 32 ICMU clocks.
Note: If the value is zero then DMARQ# signal will not be asserted.
EDGE Level or Edge:
0: Level – DMARQ# will be asserted when data is ready and will be
de-asserted before the end of the data according to DMA_PROG_NEG
(DMA Negation Register).
1: Edge – DMARQ# will be generated for the number of clock
specified in the PULSE_WIDTH field.
DMA_POL DMARQ# polarity:
0: active high
1: active low
DMA_EN DMA enable bit:
0: DMARQ# is disabled
1: DMARQ# is enabled
Note: This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
7.3.16 DMA Negation Register
Description: This 16-bit register controls the negation of DMARQ# signal to the host.
Address (hex): 9418 (128KB window) / 1418 (8KB window)
Type: Read / Write
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50 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Bit number D15-D10 D9-D0
Read/Write R R/W
Bit name RFU DMA_PROG_NEG
Reset value 0 4
DMA_PROG_NEG DMA programmable negation:
0-1023: Number of clocks before end of data transfer that DMARQ#
signal will be negated.
Note: DMA negation must be smaller than transfer size in words
(16bit).
Note: This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
7.3.17 Software Lock Register
Description: This 16-bit register implements the Sticky Lock functionality. After setting it,
protected-partitions can no longer be accessed, until the device is reset.
Address (hex): 9410 (128KB window) / 1410 (8KB window)
Type: Read / Write
Bit number D15-D1 D0
Read/Write R R/W
Bit name RFU SLOCK
Reset value 0 0
SLOCK Sticky Lock bit.
0: Sticky Lock is not active
1: Sticky Lock is activated
This bit can only be set once by the host until device is reset.
Note: This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
mDOC H3 Embedded Flash Drive
51 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
7.3.18 Endian Control Register
Description: This 16-bit register is used to control the swapping of the low and high data
bytes when reading or writing with a 16-bit host. This provides an Endian-
independent method of enabling/disabling the byte swap feature.
Address (hex): 9412 (128KB window) / 1412 (8KB window)
Type: Read / Write
Bit number D15-D9 D8 D7-D1 D0
Read/Write R R/W R R/W
Bit name RFU SWAP RFU SWAP
Reset value 0 0 0 0
SWAP Swap enable per byte. (This bit can be set by setting bit-0 OR bit-8).
To clear the bit both bits 0 & 8 need to be cleared to ‘0’;
0: Data from host is unchanged.
1: Data from host is swapped.
Note: This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
7.3.19 Version Register
Description: This 16-bit register reports the mDOC H3 version.
Address (hex): 941A (128KB window) / 141A (8KB window)
Type: Read / Write
Bit number D15-D0
Read/Write R
Bit name Version
Reset value 0
Version Version number
Note: This register cannot be accessed when the A0 signal is pulled high. Therefore it is
recommended that A0 will be connected to Host CPU A0, or to VSS.
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52 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
8. BOOTING FROM MDOC H3
8.1 Introduction
mDOC H3 can function both as a flash disk and as the system boot device.
If mDOC H3 is used both as a flash disk and as the system boot device, it contains the boot
loader, an OS image and a file system. In such a configuration, mDOC H3 can serve as the only
non-volatile device on board.
When using mDOC H3 as the system boot device, the CPU fetches the first instructions from the
mDOC H3 Programmable Boot Block, which contains the IPL. The IPL handles the required
platform initializations, and then loads the required image or OS Boot loader from its dedicated
partition.
msystems’ DOC driver, SDK and utilities enable the construction of a proper mDOC H3 layout
in order to support the boot sequence. For a complete description of these tools, refer to the DOC
Driver Software Development Kit (SDK) developer guide and the DOC Software Utilities user
manual. These tools enable the following operations:
Formatting mDOC H3
Creating multiple partitions for different storage needs (IPL, Boot loader, OS images files,
and FAT partitions)
Programming the OS image file
mDOC H3 Embedded Flash Drive
53 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Figure 10 illustrates an example of a boot sequence.
Boot Loader
OS Image
Flash Disk
Partition (OS
Image Storage)
Flash Disk
Partition
(File Storage)
Power-Up
RAM
Basic System Initialization
Boot Loader Copies
OS Image to RAM
OS Start-Up Code
m DOC H 3
Copy
Image
to RAM
Take Image
from mDOC
Figure 10: System Boot Sequence with mDOC H3
8.1.1 Asynchronous Boot Mode
Host platforms should use Asynchronous Boot mode when using mDOC H3 as the system boot
device.
During platform initialization, certain CPUs wake up in 32-bit mode and issue instruction fetch
cycles continuously. An Intel PXAxxx CPU, for example, initiates a 16-bit read cycle, but after
the first word is read, it continues to hold CE# and OE# asserted while it increments the address
and reads additional data as a burst.
Once in Asynchronous Boot mode, the CPU can fetch its instruction from the mDOC H3
Programmable Boot Block. After reading from this block and completing the boot, mDOC H3
returns to derive its internal clock signal from the CE#, OE#, and WE# inputs. Please refer to
Section 10 for read timing specifications for Asynchronous Boot mode.
8.1.2 Virtual RAM Boot
The Virtual RAM Boot feature utilizes the 32KB physical IPL SRAM to provide XIP access to
up the full XIP window size (either 8KB or 128KB) of flash data, without requiring any prior
knowledge of the device architecture. This feature can be used to support Secure Boot
requirements. The Virtual RAM Boot feature can only be used by platforms that support the
mDOC H3 BUSY# signal and variable-length I/O access, i.e. insert wait cycles if BUSY# signal
is active.
mDOC H3 Embedded Flash Drive
54 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
When mDOC H3 is configured for Virtual RAM Boot mode, the mode is retained after Reset as
well. While in this mode, read cycles from the entire mDOC H3 128KB memory window return
virtual RAM data.
Access to an address that is not within the physical window of this configuration (2KB in 8KB
window or 32KB in 128KB window), initiates a download operation in which the required data is
copied from the NAND flash to the physical SRAM. The mDOC H3 BUSY# output is asserted
for the duration of the download, to indicate that the data is not ready, holding the platform in a
wait state. When the download is completed the BUSY# line will be de-asserted. This handshake
mechanism is compatible with CPU bus controllers that support automatic insertion of wait states
based on the state of a /RDY signal. The platform must be capable of being held in a wait state
for an arbitrary period during each download process, without interference from watchdog timers.
The download is transparent to the host software; XIP and random access to any location within
the full virtual address space are therefore supported.
To exit the virtual mode, the host CPU should perform a write into the mDOC H3 window, to an
address as follows:
8KB mode: A11 = 1 and A12 = 0
128KB mode: A11-A15 = 0 and A16 = 1
For more information on how to boot from mDOC H3 in Virtual RAM Boot mode, please contact
your local msystems sales office.
8.1.3 Paged RAM Boot
The Paged RAM Boot feature uses the IPL SRAM as two 1KB sections. The first section
provides constant data, while the other section can be downloaded sequentially with flash data.
One application of this feature is to support Secure Boot requirements. The Paged RAM Boot
feature does not require support of the BUSY# output.
After a hardware or software reset, mDOC H3 initializes the first 2KB of XIP RAM with data
stored in the first 2KB of the pre-programmed IPL. The Paged RAM Boot feature permits 1KB
virtual pages (up to 254KB total) to be downloaded sequentially to the XIP RAM, upon receiving
the proper command sequence. Since the mDOC H3 BUSY# output is not asserted by a page-
load operation, a polling procedure is required to determine when the download is complete. An
XIP operation from the mDOC H3 RAM is not supported during this polling operation, so it must
be executed from system RAM or ROM instead.
When two mDOC H3 devices are cascaded, Paged RAM downloads occur only on the first
mDOC H3 device in the cascaded configuration (device-0).
For more information on booting from mDOC H3 in Paged RAM Boot mode, please contact your
local msystems sales office.
mDOC H3 Embedded Flash Drive
55 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
9. DESIGN CONSIDERATIONS
9.1 General Guidelines
A typical RISC processor memory architecture may include the following devices:
mDOC H3: Contains the OS image, applications, registry entries, back-up data, user files
and data, etc. It can also be used to perform boot operation, thereby replacing the need for
a separate boot device.
CPU: mDOC H3 is compatible with all major CPUs in the mobile phone, Digital TV
(DTV), Digital Still Camera (DSC), MP3, GPS and other Portable Consumer Electronics
Applications markets, including:
o ARM-based CPUs
o Texas Instruments OMAP, DBB
o Intel PXAxxx family
o Infineon xGold family
o Analog Devices (ADI) digital Baseband devices
o Freescale i.MXxx Application processors and i.xx digital Baseband devices
o Zoran ER4525
o Renesas SH mobile
o EMP platforms
o Qualcomm MSMxxxx
Boot Device: In case mDOC H3 is not used as a boot device, ROM or NOR flash that
contains the boot code is required for system initialization, kernel relocation, loading the
operating systems and/or other applications and files into the RAM and executing them.
RAM/DRAM Memory: This memory is used for code execution.
Other Devices: A DSP processor, for example, may be used in a RISC architecture for
enhanced multimedia support.
9.2 Configuration and GPIO Interface
The Configuration and GPIO Interface enables the designer to configure mDOC H3 to operate in
different modes and to use the GPIO for predefined purposes.
The ID0 signal is used in a cascaded configuration.
The LOCK# signal is used for hardware write/read protection
GPIO_TIMER signal is a predefined timer waveform with vary frequency and duty cycle
WARM_RST# signal (Warm reset) is used for triggering device warm-reset of mDOC H3.
mDOC H3 Embedded Flash Drive
56 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
9.3 Standard NOR-Like Interface
mDOC H3 uses a NOR-like interface that can easily be connected to any microprocessor bus.
With a standard interface, it requires 16 address lines, 16 data lines and basic memory control
signals (CE#, OE#, WE#), as shown in Figure 11 below. Typically, mDOC H3 can be mapped to
any free 128KB memory space (8KB address space requires less address lines).
Host
Host serial
control
For power connectivity please refer to mDOC H3 power supply connectivity in section 9.5.
Figure 11: Standard System Interface
Notes: 1. The 0.1 uF and the 10 nF low-inductance, high-frequency capacitors must be attached
to each of the device’s power and VSS balls according to the above figure. These
capacitors must be placed as close as possible to the package leads.
2. The 1 uF capacitors are for internal voltage regulators stability.
3. mDOC H3 is an edge-sensitive device. CE#, OE#, and WE# should be properly
terminated (according to board layout, serial parallel or both terminations) to avoid
signal ringing.
mDOC H3 Embedded Flash Drive
57 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
9.4 Multiplexed Interface
With multiplexed interface, mDOC H3 requires the signals shown in Figure 12 below.
Dekel Flash
cp
VR
33nF
10nF0.1µF
0.1µF 1µF
1µF
core
IO
VCC_Flash
Charge pump cap
VCCQ VCC1 C+ C- VSS
VCC2VCC
AD[15:0]
OE#
WE#
CE#
RSTIN#
ID0
WARM_RST#
BUSY#
IRQ#
LOCK#
Address/Data bus
Output enable
Write enable
Chip enable
Reset
Warm Reset
ID
DMARQ#
AVD#
Address valid
0.1µF
SCS#
SCLK
SO
SI
CLK
clock
3.3V1.8V/3.3V
1.8V
1.8V/3.3V
serial
Host
Host
control
GPIO_TIMER
For power connectivity please refer to mDOC H3 power supply connectivity in section 9.5.
Figure 12: Multiplexed System Interface
Notes: 1. The 0.1 uF and the 10 nF low-inductance, high-frequency capacitors must be attached
to each of the device’s VCC and VSS balls according to Table 4. These capacitors
must be placed as close as possible to the package leads.
2. The 1 uF capacitors are for internal voltage regulators stability.
3. mDOC H3 is an edge-sensitive device. CE#, OE#, and WE# should be properly
terminated (according to board layout, serial parallel or both terminations) to avoid
signal ringing.
mDOC H3 Embedded Flash Drive
58 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
9.5 H3 Power Supply Connectivity
mDOC H3 can be configured to support different combinations of Core and IO host supply.
Table 4 lists the connectivity required for the support of the different available combinations.
Table 4: Power Connectivity
mDOC H3 Power
Supply VCC VCCQ VCC1 VCC2 C+, C-
Core: 3.3V [2.7V-3.6V]
IO: 3.3V [2.5V-3.6V]
3.3V
[2.7V-3.6V]
3.3V
[2.5V-3.6V]
Connect to a
1uF capacitor
to VSS
3.3V
[2.7V-3.6V]
No Connection
Core: 3.3V [2.7V-3.6V]
IO: 1.8V [1.65V-1.95V]
3.3V
[2.7V-3.6V]
1.8V
[1.65V-1.95V]
Connect to a
1uF capacitor
to VSS
3.3V
[2.7V-3.6V]
No Connection
Core: 1.8V [1.65V-1.95V]
IO: 1.8V [1.65V-1.95V]
1.8V
[1.65V-1.95V]
1.8V
[1.65V-1.95V]
1.8V
[1.65V-1.95V]
Requires a 1uF
and 0.1uF
capacitor only
Requires a 33nF
capacitor
9.6 Connecting Control Signals
9.6.1 Standard Interface
When using a standard NOR-like interface, connect the control signals as follows:
A[16:0] – Connect these signals to the host address signals (see Section 9.10 for
platform-related considerations). The A0 signal may be connected to either the host CPU A0
signal or to VSS.
D[15:0] – Connect these signals to the host data signals (see Section 9.10 for platform-related
considerations).
OE# (Output Enable) and Write Enable (WE#) – Connect these signals to the host RD# and
WR# signals, respectively.
CE# (Chip Enable) – Connect this signal to the memory address decoder. Most RISC/mobile
processors include a programmable decoder to generate various Chip Select (CS) outputs for
different memory zones. These CS signals can be programmed to support different wait states
to accommodate mDOC H3 timing specifications.
RSTIN# (Power-On Reset In) – Connect this signal to the host active-low Power-On Reset
signal.
ID0 (Chip Identification) – Connect this signal as shown in Figure 11. This signal must be
connected to VSS if the host uses only one mDOC H3. If more than one device is being used,
refer to Section 9.9 for more information on device cascading.
mDOC H3 Embedded Flash Drive
59 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
BUSY# (Busy) – This signal indicates when the device is ready for first access after reset. It
may be connected to an input port of the host, or alternatively it may be used to hold the host
in a wait-state condition. The later option is required for hosts that boot from mDOC H3.
DMARQ# (DMA Request) – Output used to control multi-page DMA operations. Connect
this output to the DMA controller of the host platform.
IRQ# (Interrupt Request) – Connect this signal to the host interrupt.
Lock# (LOCK) – Connect to a logical 0 to prevent the usage of the protection key to open a
protected partition. Connect to logical 1 in order to enable usage of protection keys.
CLK (Clock) – This input is used to support Burst operation when reading flash data. Refer to
Section 9.8 for further information on Burst operation.
WARM_RST# (Warm Reset) - The warm reset input is used to reset only the host interface
block. This option is to be used in case the host experienced a reset which mDOC H3 is not
exposed to for any reason. For example in case of watchdog reset in specific platforms, GPIO
reset etc. It is recommended to connect this input to system nRESET_OUT signal if available
or to a host GPIO in other cases. Upon assertion of the warm reset signal mDOC H3 host
interface will switch to a pre-defined state according to the data written in a dedicated control
register (refer to Warm Boot Register for detailed description). The configurable operation of
the warm boot input allows mDOC H3 to be connected to all of the platforms without being
stacked by any kind of reset.
9.6.2 Multiplexed Interface
mDOC H3 can use a multiplexed interface to connect to a multiplexed bus. In this configuration,
mDOC H3 AVD# signal is driven by the host's AVD# signal, and the D[15:0] balls, used for both
address inputs and data, are connected to the host AD[15:0] bus.
This mode is automatically entered when a falling edge is detected on AVD#. This edge must
occur after RSTIN# is negated and before OE# and CE# are both asserted; i.e., the first read cycle
made to mDOC must observe the multiplexed mode protocol. See Section 10 for more
information about the related timing requirements.
Please refer to Section 2.3 for ballout and signal descriptions, and to Section 10 for timing
specifications for a multiplexed interface.
9.7 Implementing the Interrupt Mechanism
9.7.1 Hardware Configuration
To configure the hardware for working with the interrupt mechanism, the IRQ# ball should be
connected to a host interrupt input.
9.7.2 Software Configuration
IRQ# signal may be used by mDOC H3 to interrupt the host system, provided that device
interrupts are enabled. Interrupts can be enabled or disabled by writing the nIEN bit in the Device
Control register. IRQ# signal behavior (active high/low, edge/level) must be configured during
device formatting, using the appropriate low level format utilities such ad DOCFORMAT and
DOC driver format API.
mDOC H3 Embedded Flash Drive
60 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
mDOC H3 will interrupt the host system in the following cases:
On completion of block device operation to mDOC H3.
Device is ready to send a data block during a read operation.
Device is ready to receive a data block (excluding the first) during write operation.
The device will exit the interrupt-pending state in the following cases:
The Device Status register is read, and BSY bit is cleared;
Both BSY and DRQ bits in Device Status register are cleared, and the Command register is
written.
SRST bit in Device Control register is set.
9.8 DMA and Burst Operation
mDOC H3 enhances performance using various proprietary techniques among them are
Burst operation to read large chunks of data, providing a Burst read speed.
DMA operation to release the CPU for other tasks in coordination with the platform’s DMA
controller. This is especially useful during the boot stage. Up to 128KB of data can be
transferred during a DMA operation.
9.8.1 DMA Operation
mDOC H3 provides a DMARQ# output that enables data transfer using the host DMA controller.
During DMA operation, the DMARQ# output is used to notify the host DMA controller that data
is ready to be read or written. mDOC H3 protocol enables such data transfer up to the maximal
size of 128KB per read or write operation.
The DMARQ# output sensitivity is selected by setting the EDGE bit in the DMA Control
register:
1. Edge DMARQ# output pulses to indicate to the DMA controller that a data is ready to be
transferred. The EDGE bit is set to 1 for this mode. The amount of data that will be
transferred corresponds to data block size.
2. Level DMARQ# output is asserted while the data is available for read, or data can be
accepted for write. The EDGE bit is set to 0 for this mode.
The following steps are required in order to initiate a DMA operation:
1. If the DMA controller supports an edge-sensitive DMARQ# signal, then initialize the DMA
controller to transfer 512 bytes (or your chosen data block size) upon each DMA request. If
the DMA controller supports a level-sensitive DMARQ# signal, then initialize the DMA
controller to transfer data continuously while DMARQ# is asserted.
2. Set in the DMA Control register values of EDGE bit, PULSE_WIDTH and DMA polarity
corresponding to settings of the host DMA controller. This can be done only once after
system power-up.
3. Enable DMA transfer with DMA_EN bit in the DMA control register.
mDOC H3 Embedded Flash Drive
61 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
4. If host DMA controller detects the de-assertion of the DMARQ# signal too late (and
attempts to transfer additional words as a result), then DMARQ# can be configured to be de-
asserted earlier by using the DMA Negation Register.
5. Program host DMA controller to transfer the same number of sectors as will be given in
following logical command.
6. Issue the DMA data-transfer read/write command with same number of sectors to transfer as
given in the previous step (prior to this, the device should be instructed to perform transfers
in DMA-mode).
Upon command completion IRQ# will be asserted (it is recommended to use IRQ# when working
with DMA). In case of a failure, less than expected amount of data could be transferred.
In commands that use DMA transfer, IRQ# is activated only at the completion of the whole
command; while in commands that do not use DMA transfer IRQ# is typically activated with
every data transfer.
In case DMA transfer needs to be aborted, SRST should be set in the Device Control register, in
order to abort the command. After this wait until mDOC H3 is no longer BUSY.
Default setting of DMARQ# is level and active-low. It can be modified at programming /
formatting stage.
9.8.2 Burst Operation
Burst operation is especially effective for large file reads that are typical during boot-up. Data is
read by the host one 16-bit word after another using the CLK input.
Burst operation is controlled by 5 bit fields in each Burst Mode Control register (one for Burst
read and one for Burst write): BURST_EN, WAIT_STATE, LATENCY, HOLD and LENGTH.
For full details on this register, please refer to Section 6.5.
Burst Read / Write mode is enabled by setting the BURST_EN bit in each Burst Mode Control
register.
The HOLD bit in the Burst Mode Control register can be set to hold each data word valid for two
clock cycles rather than one.
The LENGTH field must be programmed with the length of the burst to be performed (0
corresponds to 4 cycles; 1 to 8 cycles, 2 to 16 and 3 corresponds to 32 cycles). Each burst cycle
must read exactly this number of words.
WAIT_STATE allows setting the number of CLK after the host has read the [N-1] word until the
assertion of the CE#.
0: None – No CLK before CE# assertion.
1: One CLK clock before CE# assertion.
2: Two CLK clocks before CE# assertion.
3: Three CLK clocks before CE# assertion.
mDOC H3 Embedded Flash Drive
62 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Note: In Burst write the wait states start from the Nth word.
The LATENCY field controls the number of clock cycles between mDOC H3 sampling CE#
being asserted and when the first word of data is available to be latched by the host. This number
of clock cycles is equal to 2 + LATENCY.
Note: If HOLD = 1, then the data is available to be latched on this clock and on the subsequent
clock.
The CLK input can be toggled continuously or can be halted. When halting the CLK input, the
following guidelines must be observed:
After asserting OE# and CE#, LATENCY + 2 CLK cycles are required prior to
latching the first word
If the HOLD bit is set to 0, the host must provide one rising CLK edge for each word
read, except for the last word latched, for which CLK does not need to be toggled.
If the HOLD bit is set to 1, the host must provide two rising CLK edges for each word
read, except for the last word, for which the second of the two CLK rising edges is not
required.
Subsequent toggling of the CLK is optional.
Burst should be disabled before accessing mDOC H3 registers or IPL. This can be done by
writing to the BURST_EN bit in Burst Mode Control Registers, which is the only accessible
register in burst mode.
Notes: 1. Burst mode has to be turned off in order to respond to the mDOC H3 interrupt
requests (generated during combined Burst and DMA operation).
2. Burst mode can be used only in conjunction with DMA operation, since the status
register cannot be polled in the middle of a burst transfer, to determine command
completion.
3. Burst Write mode can be aborted by writing to Burst Write Mode Exit register.
9.9 Device Cascading
When connecting mDOC H3 using a standard interface, up to two devices can be cascaded with
no external decoding circuitry. Figure 13 illustrates the configuration required to cascade two
devices on the host bus (only the relevant cascading signals are included in this figure, although
all other signals must also be connected). All balls of the cascaded devices must be wired in
common, except for ID0. The ID ball values determine the identity of each device – the first
device is identified by connecting the ID ball as 0, and the second device by connecting the ID
ball as 1. Systems that use only one mDOC H3 should connect ID0 to GND.
mDOC H3 Embedded Flash Drive
63 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Figure 13: Standard Interface, Cascaded Configuration
9.10 Platform-Specific Issues
This section discusses hardware design issues for major embedded RISC processor families.
9.10.1 Wait State
Wait states can be implemented only when mDOC H3 is designed in a bus that supports a Wait
state insertion, and supplies a WAIT signal.
9.10.2 Big and Little Endian Systems
mDOC H3 is a Little Endian device. Therefore, byte lane 0 (D[7:0]) is its Least Significant Byte
(LSB) and byte lane 1 (D[15:8]) is its Most Significant Byte (MSB). Within the byte lanes, bit D0
and bit D8 are the least significant bits of their respective byte lanes. mDOC H3 can be connected
to a Big Endian device in one of two ways:
1. Make sure to identify byte lane 0 and byte lane 1 of your processor. Then, connect the data
bus so that the byte lanes of the CPU match the byte lanes of mDOC H3. Pay special
attention to processors that also change the bit ordering within the bytes (for example,
PowerPC). Failing to follow these rules results in improper connection of mDOC H3, and
prevents the DOC driver from identifying it.
2. If needed, set the SWAP bits in the Endian Control register. This enables byte swapping
when used with big endian 16-bit hosts. Please note the Endian Control register cannot be set
while A0 is pulled high.
9.10.3 Busy Signal
The Busy signal (BUSY#) indicates that mDOC H3 has not yet completed internal initialization.
After reset, BUSY# is asserted while the IPL is downloaded into the internal boot block. Once the
download process is completed, BUSY# is de-asserted. It can be used to delay the first access to
mDOC H3 until it is ready to accept valid cycles.
ID0
CE#
OE#
WE#
CE#
WE#
OE#
V SS
ID0
CE#
OE#
WE#
VCCQ
2nd
1st
mDOC H3 Embedded Flash Drive
64 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Note: mDOC H3 does NOT use this signal to indicate that the flash is in busy state (e.g. program,
read, or erase).
9.10.4 Working with 16/32-Bit Systems
mDOC H3 uses a 16-bit data bus and supports 16-bit data access by default. However, it can be
configured to support 32-bit data access mode. This section describes the connections required
for each mode.
The default of the DOC driver for mDOC H3 is set to work in 16-bit mode. It must be specially
configured to support 32-bit mode. Please see DOC Driver or TrueFFS 7.1 documentation for
further details.
Note: The mDOC H3 data bus must be connected to the Least Significant Bits (LSB) of the
system.
16-Bit (Word) Data Access Mode
The mDOC H3 is 16 bit wide device. All accesses to and from the device are 16 bit wide.
mDOC H3 address lines should be connected to system host address lines, as depicted in Figure
14.
mDOC H3 A0 line should be connected either to system host SA0 address line, or to VSS.
Note: The prefix “SA” indicates system host address lines
Figure 15: 16-Bit Data Access Mode
32-Bit (Double Word) Data Access Mode
In a 32-bit bus system that cannot execute word-aligned accesses, the system address lines SA0
and SA1 are always 0. Consecutive double words (32-bit words) are differentiated by SA2
toggling. Therefore, in 32-bit systems that support only 32-bit data access cycles, mDOC H3
signal A1 is connected to the first system address bit that toggles; i.e., SA2.
mDOC H3 address lines should be connected to system host address lines, as depicted in Figure
16.
mDOC H3 A0 line should be connected either to system host SA1 address line, or to VSS
mDOC H3 Embedded Flash Drive
65 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
System Host
Note: The prefix “SA” indicates system host address lines
Figure 17: Address Shift Configuration for 32-Bit Data Access Mode
9.11 Design Environment
mDOC H3 provides a complete design environment consisting of:
Evaluation boards (EVBs) for enabling software integration and development with
mDOC H3, even before the target platform is available.
Programming solutions:
o Programmer
o Programming house
o On-board programming
DOC Driver Software Development Kit (SDK)
TrueFFs 7.1 Software Development Kit (SDK)
XP utilities:
o DocFormat
o DocGetImage
o DocPutImage
o DocInfo
Documentation:
o Data sheet
o Application notes
o Technical notes
o Articles
o White papers
Please visit the msystems website (www.m-systems.com) for the most updated documentation.
mDOC H3 Embedded Flash Drive
66 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10. PRODUCT SPECIFICATIONS
10.1 Environmental Specifications
10.1.1 Operating Temperature
Extended temperature range: -40°C to +85°C
10.1.2 Thermal Characteristics
Table 5: Thermal Characteristics
Thermal Resistance (°C/W)
Junction to Case (θJC): 40* Junction to Ambient (θJA): 90*
* Note: Final numbers may vary within a range of 10%
10.1.3 Humidity
10% to 90% relative, non-condensing.
10.2 Electrical Specifications
10.2.1 Absolute Maximum Ratings
Table 6: Absolute Maximum Ratings
Parameter Symbol Rating Units
1.8V DC supply voltage VCC1 -0.3 to 2 V
3.3V DC supply voltage VCC -0.3 to 4 V
Input pin voltage Vin -0.3 to 3.6 V
Ambient Temperature OTR -40 to 85 °C
Storage temperature Tstg -55 to +150 °C
10.2.2 Capacitance
Table 7: Capacitance
Symbol Parameter Conditions Min Typ Max Unit
CIN Input capacitance VIN = 0V 10 pF
COUT Output capacitance VO = 0V 10 pF
mDOC H3 Embedded Flash Drive
67 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.2.3 DC Characteristics
10.2.3.1 1.8V Core, 1.8V I/O
Table 8: 1.8V Core, 1.8V I/O
Symbol Parameter Conditions Min Typ Max Unit
VCCQ I/O power supply 1.65 1.8 1.95 V
VCC2 Internal supply NC NC NC -
VCC Device supply 1.65 1.8 1.95 V
VCC1 Internal supply 1.65 1.8 1.95 V
VIH Input High-level Voltage 0.65*VC
CQ
0.3+
VCCQ
V
VIL Input Low-level Voltage -0.3 0.35*
VCCQ
V
II Input Leakage Current 0VINVCCQ -10 10 uA
IOZ Tri-State output leakage current 0VINVCCQ -10 10 uA
Vhys Hysteresis Schmidt trigger
inputs
400 mV
VOH High-level Output Voltage IOH=4mA-
12mA
VCCQ-
0.45
V
VOL Low-level Output Voltage IOH=4mA-
12mA
0.45 V
PU Pull up resistance 95 149 261 k
PD Pull down resistance 77 135 312 k
Icc Active supply current1
(cycle time = 60 ns)
T=25C 20 30 60 mA
DPD mode 25 45 115 uA
ICCS Standby supply current1
Turbo mode TBD 5 10 mA
1. Sum of all current on VCC, VCCQ and VCC1 balls. CL = 0 pF.
mDOC H3 Embedded Flash Drive
68 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.2.3.2 3.3V Core, 1.8V I/O
Table 9: 3.3V Core, 1.8V I/O
Symbol Parameter Conditions Min Typ Max Unit
VCCQ I/O power supply 1.65 1.8 1.95 V
VCC2 Internal supply 2.7 3.3 3.6 V
VCC Device supply 2.7 3.3 3.6 V
VCC1 Internal supply NC NC NC -
VIH Input High-level Voltage 0.65*
VCCQ
0.3+
VCCQ
V
VIL Input Low-level Voltage -0.3 0.35*
VCCQ
V
II Input Leakage Current 0VINVCCQ -10 10 uA
IOZ Tri-State output leakage current 0VINVCCQ -10 10 uA
Vhys Hysteresis Schmidt trigger
inputs
400 mV
VOH High-level Output Voltage IOH=4mA-
12mA
VCCQ-
0.45
V
VOL Low-level Output Voltage IOH=4mA-
12mA
0.45 V
PU Pull up resistance 95 149 261 k
PD Pull down resistance 77 135 312 k
Icc Active supply current1
(cycle time = 60 ns)
T=25C 20 30 60 mA
DPD mode 25 45 130 uA
ICCS Standby supply current1
Turbo mode TBD 5 10 uA
1. Sum of all current on VCC, VCCQ and VCC1 balls. CL = 0 pF.
mDOC H3 Embedded Flash Drive
69 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.2.3.3 3.3V Core, 3.3V I/O
Table 10: 3.3V Core, 3.3V I/O
Symbol Parameter Conditions Min Typ Max Unit
VCCQ I/O power supply 2.5 3.3 3.6 V
VCC2 Internal supply 2.7 3.3 3.6 V
VCC Device supply 2.7 3.3 3.6 V
VCC1 Internal supply NC NC NC -
VIH Input High-level Voltage 1.7 3.6 V
VIL Input Low-level Voltage -0.3 0.8 V
II Input Leakage Current 0VINVCCQ -10 10 uA
IOZ Tri-State output leakage current 0VINVCCQ -10 10 uA
Vhys Hysteresis 400 mV
VOH High-level Output Voltage IOH=4mA-
12mA
2.4 V
VOL Low-level Output Voltage IOH=4mA-
12mA
0.4 V
PU Pull up resistance 50 65 100 k
PD Pull down resistance 40 56 107 k
Icc Active supply current1
(cycle time = 60 ns)
T=25C 20 30 60 mA
DPD mode 25 45 130 uA
ICCS Standby supply current1
Turbo mode TBD 5 10 mA
1. Sum of all current on VCC, VCCQ and VCC1 balls. CL = 0 pF.
10.2.4 Operating Conditions
Table 11: Operating Condit ions
Parameter 1.8V 3.3V
Ambient temperature (TA) -40°C to +85°C -40°C to +85°C
Supply Voltage (VCCQ) 1.65V – 1.95V 2.5V – 3.6V
CLK, OE#, WE#,
CE#, SCS#, SI,
SO, SCLK
3ns
3ns
Input fall
and rise
time
All other inputs 5ns 5ns
Input timing level VCCQ/2 VCCQ/2
Output timing level VCCQ/2 VCCQ/2
Output Load
mDOC H3 Embedded Flash Drive
70 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Parameter 1.8V 3.3V
Push/Pull outputs 30pF 30pF
mDOC H3 Embedded Flash Drive
71 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.3 Timing Specifications
10.3.1 Standard Asynchronous Read Timing
Figure 18: Standard Asynchronous Rea d Timing
A0 A1
D0 D1
Tacc (ipl_ram)
Tacc (ipl_ram) Tdh
Tsua
CE
OE
ddress
Data
Figure 19: Standard Read Timing – Asynchronous Boot Mode
Table 12: Standard Asynchronous Read Timing Parameters
1.8V 3.3V
Symbol Description
Min Max Min Max
Units
Tsua Address setup time (Figure
18) 1 1
ns
Tsua
Address setup time (Figure
19) – Asynchronous boot
mode
-2 -2 ns
Tacc(async) Asynchronous access time
(Registers) 17 14 ns
Tacc(ipl_ram) RAM access time 24 22 ns
Tdh Data hold time 1.5 1.5 ns
Tw(ceh) CE# high pulse width 10 10 ns
Tw (cel) CE# low pulse width 20 15 ns
mDOC H3 Embedded Flash Drive
72 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.3.2 Standard Asynchronous Write Timing
Valid Ad d
r
Data
TdhTdsu
TahTasu
Tw(ceh)Tw(ceh)Tw (cel)Tw (cel)
CE
WE
A
ddress
Data
Figure 20: Standard Asynchronous Write Timing
Table 13: Standard Asynchronous Write Timing Parameters
1.8V 3.3V
Symbol Description
Min Max Min Max
Units
Tasu (regs) Address setup (Registers) 1 1.2 ns
Tah Address hold time 3 3 ns
Tdsu Data setup 11 11 ns
Tdh Data hold 0 0 ns
Tw(ceh) WE# high pulse width 10 10 ns
Tw (cel) WE# low pulse width 15 15 ns
mDOC H3 Embedded Flash Drive
73 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.3.3 Multiplexed Asynchronous Read Timing
Address valid D0
Tacc
Tah
Tasu
Tavdoe
TavdTavd
Tw(oeh)Tw(oeh)Tw(oel)Tw(oel)
CE
OE
AVD
Data
Figure 21: Multiplexed Asynchronous Read Timing Diagram
Table 14: Multiplexed Asynchrono us Read Timing Parameters
1.8V 3.3V
Symbol Description
Min Max Min Max
Units
Tasu Address setup 3 2 ns
Tah Address hold 5 5 ns
Taccs Access time 15 13 ns
Tdh Data hold 1.5 1.4 ns
Tavd AVD# pulse width 6 6 ns
Tw(oel) OE# low pulse width 15 15 ns
Tw(oeh) OE# high pulse width 10 10 ns
Tavdoe AVD rising to OE falling 6 6 ns
mDOC H3 Embedded Flash Drive
74 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.3.4 Multiplexed Asynchronous Write Timing
A0 D0
TdhTdsu
Tah
Tasu
TavdweTavdTavd
Tw(weh)Tw(wel) Tw(weh)Tw(wel)
CE
WE
AVD
Data
Figure 22: Multiplexed Asynchronous Write Timing Diagram
Table 15: Multiplexed Asynchrono us Write Timing Parameters
1.8V 3.3V
Symbol Description
Min Max Min Max
Units
Tasu Address setup 3 2 ns
Tah Address hold 5 5 ns
Tdsu Data setup time 12 11 ns
Tdh Data hold 0 0 ns
Tavd AVD# pulse width 6 6 ns
Tw(wel) WE# low pulse width 15 15 ns
Tw(weh) WE# high pulse width 5 5 ns
Tavdwe AVD rising to WE falling 1 1 ns
mDOC H3 Embedded Flash Drive
75 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.3.5 Standard Burst Read Timing
A0
D0 D1 D2 D3 D4 D5 D6 D7
Tacc
Thd
Tah
Tasu
Tces u
TcycTcyc
Burst_clk
CE
Address
OE
Data
CLK
Figure 23: Standard Burst Read Timing Diagram
Table 16: Standard Burst Read Timing Parameters
1.8V 3.3V
Symbol Description
Min Max Min Max
Units
Tasu Address setup 4 4 ns
Tah Address hold 2.5 2.5 ns
Tcesu CE# setup 7 7 ns
Tacc Access time 11.2 8.1 ns
Tcyc Burst clock cycle time 12.5 12.5 ns
Thd Data hold time 2 2 ns
1. All timing specifications are with reference to the rising edge of the Burst clock.
2. Shown with the following Burst Mode Control Register (Read) parameters:
HOLD = 0
LENGTH = 8
LATENCY = 0
WAIT_STATE = 0
3. This diagram is applicable only if working with continuous clock.
mDOC H3 Embedded Flash Drive
76 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.3.6 Standard Burst Write Timing
A0
D0 D1 D2 D3
Tdh
Tdsu
Tweh
Twesu
Tah
Tasu
Tcesu
TcycTcyc
Burst CLK
CE
Ad dre s s
WE
Data
Figure 24: Standard Burst Write Timing Diagram
Table 17: Standard Burst Write Timing Parameters
1.8V 3.3V
Symbol Description
Min Max Min Max
Units
Tasu Address setup 4 4 ns
Tah Address hold 2.5 2.5 ns
Tcesu CE# setup 7 7 ns
Twesu WE# setup time 4 4 ns
Tweh WE# hold time 5 5 ns
Tcyc Burst clock cycle time 12.5 12.5 ns
Tdsu Data setup time 4 4 ns
Tdh Data hold time 2.5 2.5 ns
1. All timing specifications are with reference to the rising edge of the Burst clock.
2. Shown with the following Burst Mode Control Register (Read) parameters:
HOLD = 0
LENGTH = 8
LATENCY = 0
WAIT_STATE = 0
3. This diagram is applicable only if working with continuous clock.
mDOC H3 Embedded Flash Drive
77 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.3.7 Multiplexed Burst Read Timing
Valid ad
d
D0 D1 D2 D3 D4 D5 D6 D7
Tacc
Tdh
Tdsu
Tdh
Tdsu
Tavdh
Tavdsu
Tces u
TcycTcyc
Burst CLK
CE
OE
AVD
Data
Figure 25: Multiplexed Burst Read Timing Diagram
Table 18: Multiplexed Burst Read Timing Parameters
1.8V 3.3V
Symbol Description
Min Max Min Max
Units
Tasu Address setup 4 4 ns
Tah Address hold 2.5 2.5 ns
Tcesu CE setup 7 7 ns
Tacc Access time 11 8 ns
Tcyc Burst clock cycle time 12.5 12.5 ns
Tdh Data hold time 2 2 ns
Tavdsu AVD setup time 7 7 ns
Tavdh AVD hold time 1 1 ns
1. All timing specifications are with reference to the rising edge of the Burst clock.
2. Shown with the following Burst Mode Control Register (Read) parameters:
HOLD = 0
LENGTH = 8
LATENCY = 1
WAIT_STATE = 0
mDOC H3 Embedded Flash Drive
78 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.3.8 DMA Request Timing Diagram
10.3.8.1 Asynchronous Data Transfer
Table 19 lists DMA request timing parameters and Figure 26 shows the DMA request timing
diagram in Asynchronous data transfer.
Tp(ce)
Tw (dmarq)Tw (dmarq)
CE
DMA RQ#
Figure 26: DMA Request Timing Diagram (Asynchronous Data Transfer)
Table 19: DMA Request Tim ing Parameters (Asynchronous data transfer)
1.8V 3.3V
Symbol Description
Min Max Min Max
Units
Tw(dmarq) DMARQ# pulse width1 20 20 ns
Tp(ce) CE to DMARQ# negation2 19 16 ns
1. Applies to EDGE mode only. The DMARQ# pulse width can be configured by SW.
2. Applies to LEVEL mode only.
10.3.8.2 Synchronous Data Transfer
Table 20 lists DMA request timing parameters and Figure 27 shows the DMA request timing
diagram in Synchronous data transfer.
Tp(bc lk)
Tw (dmarq)Tw (dmarq)
BCLK
DMA RQ#
CLK
Figure 27: DMA request Timing Diagram (Synchronous Transfer)
Table 20: DMA Request Tim i ng Parameters (Synchronous data transfer)
1.8V 3.3V
Symbol Description
Min Max Min Max
Units
Tw(dmarq) DMARQ# pulse width1 20 20 ns
Tp(bclk) CE to DMARQ# negation2 17 13 ns
1. Applies to EDGE mode only. The DMARQ# pulse width can be configured by SW. Timing is relative to the rising edge of CLK which
samples CE# asserted.
2. Applies to LEVEL mode only.
mDOC H3 Embedded Flash Drive
79 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.3.9 SPI Timing
Table 21 lists SPI slave timing parameters. Figure 28 and Figure 29 show the SPI slave timing
diagram.
Table 21: Slave SPI Timing Parameters
1.8V 3.3V
Symbol Description
Min Max Min Max Units Notes
tw(SCLK1) SCK high pulse
width
15 15 ns
tw(SCLK0) SCK low pulse
width
15 15 ns
tcyc(SCLK) SCK period 40 40 ns
tsu(SI) SI to SCLK setup 8 8 ns
tho(SI) SCLK to SI hold 8 8 ns
tsu(SCS#) SCS# to SCLK
setup
8 8 ns
tho(SCS#) SCLK to SCS#
hold
16 16 ns
tw(SCS#1) SCS# high pulse
width
16 16 ns
tp(SO1) SCLK to SO Ç
delay
22 17 ns
tp(SO0) SCLK to SO È
delay
22 16 ns
thiz(SO) SCS# Ç to SO Hi-
Z
12 10 ns
tHIZ(SO)tp(SI0)
tp(SI1)
tHO(SI)
tSU(SI)
tw(SCS#1)tw(SCS#1)
tw(SCLK1)tw(SCLK1)
tw(SCLK0)tw(SCLK0)
tw(SCLK0)
tcyc(SCLK)
tw(SCLK0)tw(SCLK1)tw(SCLK1)
tcyc(SCLK)
SCLK (mode 0,3)
SCLK (mode 1,2)
SCS#
SI
SO
Figure 28: Slave SPI Data Timing
mDOC H3 Embedded Flash Drive
80 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
tHO(S
S
tSU(SS)
SCLK (mode 0,3)
SCLK (mode 1,2)
SCS# (selected)
SCS# (De-Selected)
Figure 29: Slave SPI Control Timing
10.3.10 Power-Up Timing
mDOC H3 is reset by assertion of the RSTIN# input. When this signal is negated, mDOC H3
initiates a download procedure from the flash memory into the internal Programmable Boot
Block. During this procedure, mDOC H3 does not respond to read or write access.
Host systems must therefore observe the requirements described below for initial access to
mDOC H3. Any of the following methods may be employed to guarantee first-access timing
requirements:
Use a software loop to wait at least Tp (BUSY1) before accessing the device after the
reset signal is negated.
Poll the state of the BUSY# output.
Poll the DOWNLOAD_RUN bit of the Download Status register until it returns 0. The
DOWNLOAD_RUN bit will be 0 when BUSY# is negated. A0 must be pulled low in
order to use this method.
Use the BUSY# output to hold the host CPU in wait state before completing the first
access which will be a RAM read cycle. The data will be valid when BUSY# is negated.
Hosts that use mDOC H3 to boot the system must employ the latter option or use another method
to guarantee the required timing of initial access.
mDOC H3 Embedded Flash Drive
81 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
Table 22: Power-Up Timing Parameters
Symbol Description Min Max Units
TREC (VCC-RSTIN) VCC/VCCQ stable to RSTIN# Ç1 500 us
TW (RSTIN) RSTIN# asserted pulse width 50 ns
TP (BUSY0) RSTIN# È to BUSY# È 50 ns
TP (BUSY1) RSTIN# Ç to BUSY# Ç5 50 ms
TP (VCC-BUSY0) VCC/VCCQ stable to BUSY# È 500 us
Tsu (RSTIN-AVD) 2 RSTIN# Ç to AVD# Ç2 3
µs
Tp (RSTIN-D) 3 RSTIN# Ç to Data valid 3 3
µs
Trise (RSTIN) RSTIN# rise time5 20 ns
1. Specified from the final positive crossing of VCC/VCC1/VCC2/VCCQ minimum voltages.
2. Applies to multiplexed interface only.
3. Applies to SRAM mode only.
4. The Typical download time of 2KB IPL code for customers migrating from DiskOnChip G3/G4/H1 is 20mS.
RSTIN#
VCC
BUSY#
VCC & VCCQ within
operating specifications
TP(BUSY1)
TREC(VCC-RSTIN)
CE#, OE#
(
WE# = 1
)
TP(VCC-BUSY0)
D (Read cycle)
TW(RSTIN)
TP(BUSY0)
AVD#
(Muxed Mode Only)
TSU(RSTIN-AVD)
A[16:1] VALID
TP(RSTIN-D)
Figure 30: Reset Timing
mDOC H3 Embedded Flash Drive
82 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.4 Mechanical Dimensions
10.4.1 mDOC H3 1Gb (128MB)/2Gb (256MB)
FBGA 128MB (1Gb) dimensions: 9.0 ±0.20 mm x 12.0 ±0.20 mm x 1.1 ±0.1 mm
Ball pitch: 0.8 mm
9.0
12.0
1.1±0.1
0.26±0.04 0.8
0.4
0.4
0.9
0.8
12345678910
0.46±0.05
Top Side Bottom
A
B
C
D
E
F
G
H
J
K
L
M
N
P
0.8
0.20 S A
0.20 S B
0.10 S
0.10 S
Ø0.06 M S AB
0.15
4X
INDEX
Figure 31: Mechanical Dimensions 9x12 FBGA Package
mDOC H3 Embedded Flash Drive
83 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
10.4.2 mDOC H3 4Gb (512MB)/8Gb (1GB)/ 16Gb (2GB)
FBGA dimensions: 12.0 ±0.20 mm x 18.0 ±0.20 mm x 1.3 ±0.1 mm
Ball pitch: 0.8 mm
12.0
18.0
1.3±0.1
0.26±0.04
0.8
0.4
0.4
0.8
2.4
3.8
12345678910
0.46±0.05
Top Side Bottom
A
B
C
D
E
F
G
H
J
K
L
M
N
P
INDEX
Figure 32: Mechanical Dim ensions 12x18 FBGA Package
mDOC H3 Embedded Flash Drive
84 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
11. ORDERING INFORMATION
See Table 23 for mDOC H3 devices available and the associated order information.
Table 23: mDOC H3 Order information
Capacity
Ordering Code MB Mb Package Temperature
Range
MD2534-d1G-X-P 128
1024
(1Gbit)
9x12 BGA
115 balls Pb-free Extended
MD2534-d2G-X-P 256
2048
(2Gbit)
9x12 BGA
115 balls Pb-free Extended
MD2533-d8G-X-P 1024
(1GB)
8192
(8Gbit)
12x18
BGA 115
balls
Pb-free Extended
MD2533-d16G-X-P 2048
(2GB)
16384
(16Gbit)
12x18
BGA 115
balls
Pb-free Extended
mDOC H3 Embedded Flash Drive
85 Data Sheet (Preliminary) Rev. 0.2 92-DS-1205-10
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Phone: +1-408-470-4440
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General Information
info@m-systems.com
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Shinagawa-ku Tokyo, 141-0022
Phone: +81-3-5423-8101
Fax: +81-3-5423-8102
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Minquan East Road
Taipei, Taiwan, 104
Tel: +886-2-2515-2522
Fax: +886-2-2515-2295 Sales and Technical Information
techsupport@m-systems.com
This document is for information use only and is subject to change without prior notice. M-Systems Flash Disk Pioneers Ltd. assumes no
responsibility for any errors that may appear in this document. No part of this document may be reproduced, transmitted, transcribed, stored in a
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M-Systems products are not warranted to operate without failure. Accordingly, in any use of the Product in life support systems or other
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sufficient redundancy or backup features.
Contact your local M-Systems sales office or distributor, or visit our website at www.m-systems.com to obtain the latest specifications before
placing your order.
© 2006 M-Systems Flash Disk Pioneers Ltd. All rights reserved.
M-Systems, DiskOnChip, DiskOnChip Millennium, DiskOnKey, DiskOnKey MyKey, FFD, Fly-By, iDiskOnChip, iDOC, mDiskOnChip,
mDOC, Mobile DiskOnChip, Smart DiskOnKey, SmartCaps, SuperMAP, TrueFFS, uDiskOnChip, uDOC, and Xkey are trademarks or
registered trademarks of M Systems Flash Disk Pioneers, Ltd. Other product names or service marks mentioned herein may be trademarks or
registered trademarks of their respective owners and are hereby acknowledged. All specifications are subject to change without prior notice.