SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEO hee VcE (sat) fr Cop @ 10V Ic Pr Device Type @10mA Typical 1MHz Continuous @ 25C (V) Min. Max. @ Ic(mA)|Vc_e (V) Max. @ I{mA) fg(mA) (MHz) Typical (Pe) = (mA) (mw) 2N3903 40 300 2N3904 40 350 2N3905 40 250 2N3906 40 300 2N4123 30 300 2N4124 _ 25 350 2N4125 / 30 250 2N4126 | 25 300 2N4400 40 225 2N4401_ | 40 275 2N4402 40 300 2N4403 40 350 2N4409 50 100 2N4410 100 2N5088 75 2N5089 75 2N5219 2N5220 2N5221 2N5223 2N5225 2N5226 2N5227 GES929 GES930 GES2221 GES2221A GES2222 GES2222A GES2483 GES2906 GES2907 GES5305 GES5306 GES5307 GES5308 GES5368 GES5369 GES5370 GES5371 GES5372 GES5373 GES5374 103DEVICE NPN PNP 2N3903 2N4402 2N4403 1 2N4126 GES5371 GES5373 ES5374 7 G 10 GES5812 GES5817 GES5823 1 SILICON SIGNAL TRANSISTORS BVceo (Vv) TO-92 PACKAGE hee COMPLEMENTARY PAIRS VcE(SAT) MIN.-MAX. @ Ic, Vee (V) 50-150 10mA 50-150 50-1 100-300 50-150 100- 50-150 120-360 50-150 120-360 200 100-300 60-600 100-300 200-400 60-300 30-150 1 50-150 150-500 150-500 60-160 60-160 1 100-200 NIN INI N EDN 150-300 160 i 100-200 100-200 NIN 100-300 1 wafer f a} li] / fo} f if] af af fe] lpn 200-500 1 1 1 107 (V) MAX. @ COMPLEMENT 2N3905 2N3904 2N4125 DQ OOO) Oj;O1a) GES6013 12 GES6015 17 $601 GES2906 (Continued)SILICON SIGNAL TRANSISTORS SWITCHES T0-92 PACKAGE Vv tg (mA) Ig. (Torr! Ver (V) EB(OFF) Device Tore le (mA) (mA) (Ton) (Vv) 2N3903 225 2N3904 ' 250 2N3905 260 2N3906 300 2N4400 : : 255 2N4401 255 2N4402 255 2N4403 : 255 GES5368 ' 350 GES5369 350 GES5370 400 GES5371 400 GES5372 150 GES5373 160 GES5374 175 GES5375 175 GES6000 : 205 GES6002. 250 GES6004 180 GES6006 : 240 GES6001 155 GES6003. 200 GES6005 155 GES6007 200 GES6010 : GES6012 500 GES6014 400 GES6016 GES6011 GES6013 GES6015 GES6017 GES2221A GES2222A GES2906 GES2907 MPS3638 MPS3638A 110Silicon Transistors foot 2N3903 2N3904 The General Electric 2N3903 and 2N3904 are silicon NPN planar epitaxial transistors designed for general purpose switching and amplifier applications. . . L absolute maximum ratingS: (T, = 25C unless otherwise specified) |_ke VOLTAGES |L.EMITTER 2. BASE Collector to Emitter VcEro 40 Volts To-92 3. COLLECTOR Collector to Base Veso 60 Volts Emitter to Base VEBO 6 Volts 7op2t CURRENT 407] 482/0l6[ot9| 3 Collector Io 200 mA . 0 : DISSIPATION Total Power Ty < 25C Py 350 m Watts Derate Factor T, > 25C Py 2.8 mW/C eorecine c NTHREE LEADS Operating Ty 55C to +135 C a 2.CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE Storage Tstg 59 C to 135C c 3 (THREE LEADS) $b2 APPLIES BETWEEN Ly AND L Lead (1/16" + 1/32 from T, +230C " @b APPLIES BETWEEN L> AND 12.70MM ( 500") FROM THE SEATING PLANE. DIAMETER IS UN- case for 10 sec.) CONTROLLED INL, AND BEYOND 12.70 MM (500") FROM SEATING PLANE. . electrical characteristics: (T, = 25C unless otherwise specified) STATIC CHARACTERISTICS SYMBOL MIN. MAX. UNITS Collector-Emitter Breakdown Voltage (Ic = ImA, Ip = 0) V(BR)CEO 40 _ Volts Collector-Base Breakdown Voltage (ic = 10uA, Ip = 0) ViBR)CBO 60 Volts Emitter-Base Breakdown Voitage (Ig = 10uA, Ic = 0) V(BR)EBO 6 _ Volts Collector Cutoff Current (Vcr = 30V, Vep (off) = 3V) IcEv 50 nA Base Cutoff Current (VcE = 30V, Ves (off) = 3V) IpEV 50 nA Forward Current Transfer Ratio (Vcr = 1V, Ic = 100uA) 2N3903 hrg 20 _ 2N3904 hrre 40 _ (Vcg = 1V, Ic = ImA) 2N3903 hee 35 _ 2N3904 hrr 70 (Vcr = 1V, Ic = 10mA) 2N3903 thre 50 150 2N3904 Thre 100 300 (Vcr = 1V, Ic = 50mA) 2N3903 thre 30 _ 2N3904 thre 60 (Vog = 1V, Ic = 100mA) 2N3903 thre 15 _ 2N3904 397 thee 30 _2N3903 2N3904 STATIC CHARACTERISTICS (Continued) SYMBOL MIN. MAX. UNITS Collector-Emitter Saturation Voltage (Ic = 10mA, Ip = ImA) tVoK(sat) _ .200 Volts (Ic = 50mA, Ip = SmA) + VCE (sat) 300 Volts Base-Emitter Saturation Voltage (Ic = 10mA, Ip = 1mA) + VBEGat) 65 85 Volts (Ic = 50mA, Ip = 5mA) + VBE(sat) 7 95 DYNAMIC CHARACTERISTICS Collector-Base Capacitance (Vop = 5V, Ig = O,f = 1 MHz) Cop 4 pF Emitter-Base Capacitance (Vep = SV, Ic = O,f = 1 MHz) Ceb _ 8 pF Current Gain Bandwidth Product (Vcr = 20V, Ig = 10mA,f = 100 MHz) 2N3903 fr 250 _ MHz 2N3904 fy 300 - MHz Noise Figure (Ig = 100A, Veg = 5V, Rg = 1 kHz) 2N3903 NF 6 dB BW = 15.7 kHz 2N3904 NF 5 dB Turn-On Delay ta 35 ns Collector Current Rise Time tr 35 ns (Ic = 10mA, Ip; = 1mA, Vge (off) = .SV) (Ry = 27522) Storage Delay Time 2N3903 ts 175 ns 2N3904 ts 200 ns Collector Current Fall Time te 50 ns (Ic = 10mA, Ip = Ipo = 1 mA) (Ry = 275Q, Vec = 3V) Hybrid Parameters (Ig = 1mA, Veg = 10V,f = 1 KHz) 2N3903 hfe 50 200 2N3904 hge 100 400 2N3903 hie 5 8 kQ 2N3904 hie 1 10 kQ 2N3903 Hee J 5 X10 2N3904 tie 5 8 X10 +Pulse width < 300 pisec., Duty Cycle < 2%, hoe 1.0 40 umbhos *JEDEC Registered Parameters. SWITCHING TIME EQUIVALENT TEST CIRCUITS 10< ty < 500pso t1 300 +3.0V : DUTY cvereo +410.5V DUTY CYCLE =2% +10.9V 275 _ o -0.5V <4.0pt 4a Op < 1.05 -* Ts. -iMV = _ Je <1-088 Cg= Totel shunt capecitence of test jig end connectors 1. TURN-ON TIME TEST CIRCUIT tg AND t, 2. TURN-OFF TIME TEST CIRCUIT t, AND tg 3981000 2N3903 Ty = 125C, Veg = IV 100 Ta = 25C, Voce = Ts? 25C, Voce iV = Vv Tas -BerG: Vee hee FORWARD CURRENT TRANSFER RATIO 3 t I id 100 To - COLLECTOR CURRENT - mA 3. FORWARD CURRENT TRANSFER RATIO VS. COLLECTOR CURRENT 1000 2N3904 Ta = 125C, Voge = IV Ta = 25C, Vee = 5V Ta? Vee = IV 3 6 Ta -55C, Vee = 1V hee ~ FORWARD CURRENT TRANSFER RATIO " 4 10 100 To - COLLECTOR CURRENT ~ mA 4. FORWARD CURRENT TRANSFER RATIO VS. COLLECTOR CURRENT cof : 2N3903 Ic = Ig X10 2N3904 pow wa N 0 Vee (sat) ~25-% (gat) + + Vee Vee el ! 10 100 Tg - COLLECTOR CURRENT ~ mA 5. BASE EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 399 Vee( sat) BASE EMITTER SATURATION VOLTAGE - VOLTS 2N3903 2N39042N3903 2N3904 2N3903 2N3904 1OmA| [50mA tOOmA VOLTAGE - VOLTS Voe(sat)~ COLLECTOR EMITTER SATURATION yn Ua Ao N @ 0 + 2 Ol Al t 10 20 Ig - BASE CURRENT - mA 6. COLLECTOR EMITTER SATURATION VOLTAGE VS. BASE CURRENT 2N3903 Ig = Ig X10 VcE (sat) ~ COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS Ot l I 10 100 Ig - COLLECTOR CURRENT ~ mA 7. COLLECTOR EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 2N3904 Ig Ig X10 Voce (gat) COLLECTOR EMITTER SATURATION VOLTAGE ~- VOLTS Ol Al I 10 100 I - COLLECTOR CURRENT - mA 8. COLLECTOR EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 400