MOUCCON ve.:<25.0 PRODUCT CATALOG TEL: (407) 848-4911 TEX. S1-3430 OPA: (407) Beacosgs N- CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS 400V, 50A, 0.129 PARAMETER SYMBOL UNITS Drain-source Volt.(1) VDSS 400 Vdc SDF 50N40 JAM Orain-Gate Voitage (Res=1.0Mn) (1) VOGR 400 Vde Gate-Source Voltage VGS +20 Vde FEATURES Continuous Drain Current Continuous (Tc = 25C) 1D 50 Adc @ RUGGED PACKAGE Drain Current Pulsed(3) 1DM 200 A @ HI-REL CONSTRUCTION Total Power Dissipation PD 500 W @ CERAMIC EYELETS Power Dissipation @ LEAD BENDING OPTIONS Derating > 25C 4.0 w/c @ COPPER CORED 62 ALLOY PINS Operating & Storage Temp. | Ty/Tsig 735 TO +150 C @ LOW IR LOSSES <c7w| |@ LOW THERMAL RESISTANCE Thermal Resistance Rthdc 0.25 Max .Lead renperatura Th 300 c @ OPTIONAL MIL-STD-883 SCREENING ELECTRICAL CHARACTERISTICS Tc= 26C (Wise spcoreD ) SCHEMATIC PARAMETER SYMBOL| TEST CONDITIONS MINJTYP | MAX JUNITS| Drain-source VGS=0V D Breakdown Vo tt |8R0SS 1D=500 pA 400) - ~ v im Oo Voltage re ves(tH)|vos=ves 10=s00ya [2.0] - [4.0] v Gate Source Leakage 1GSS |VGS=+20 V - - |200] nA _ Zero Gate VDS=MAX.RATING VGS=0| - | - |SOO| A G Voltage Drain | IDSS = tee voszo.8 max.narins | | fo.o| ma Static Drain- VGS=10 V Source On-State|RDS(ON - | - Jo.12] ~* Resistance(t) (ON) 10*28A , Forward Trans- vVOS 2 SO V Conductance (2)| 9fS | ips=28a 13 | - | - [S() Ss , Input Capacitance] CISS ~ |g000| - pF so Output Capacitancel COSS yo OY MO Vv [Aloo] - pF Reverse Transfer CRSS : - l200/ - pF (CUSTOM SCHEMATIC OPTIONS AVAILABLE) Turn-On Delay {td(on)]/ypp=400V RG=2.20 - - | 33] ns STANDARD BEND CONFIGURATION JAM Rise Time tr (Nose itching ti ~ | [140]| ns Turn-Off Delayltd(off fare essentially indepen- - - {120} ns Fall Time if dent of operating temp.) [_ = 99 | ns Total Gate Charge Gate-Source Plus} Qg - - |340] nc ate-Drain) VGS= 10v, ID=50A 6 Gate-Source VDS=0.8 MAX.RATIN Charge Qgs (Gate charge is essenti- ~ ~ 84 | nc = ; ally independent o e aah peen) Qad operating temperature) _ ~ |240] nc Charge SOURCE-DRAIN DIODE RATINGS & CHARACT. Tp= 26 C (Wise Sparen PARAMETER SYMBOL TEST CONDITIONS MIN | TYP..1MAX.|UNITS Continuous _ Source Current] tS Mod it ied MOSFET ne -|- Iso | A (Body Diode) integral reverse Pulse Source P-N junction recti- Current (Body | ISM |fier (See schematic)| ~ | - |200] A Diode) (1) Diode Forward IF=SOA, VGS=0V - - Voltage (2) VSD |Te=+25C 2.0} Vv Reverse =a0me _ _ Recovery Time ter Te=*25 C 1000; ns Reverse Re- IF=S0A covery Charge | Orr |di/dt=100A7 nS ~ [14.2] 7 | wc (CUSTOM BEND OPTIONS AVAILABLE) Tu = 28C to 150C. REL .3/93 1) 3 Pulee test: Pulse Width <300uS, Duty Cycle < 2%. 3) Repetitive Rating: Pulse Width Imited By Max. junction Temperature. A20 -1