1996 May 24 2
Philips Semiconductors Product specification
Rectifiers 1N4001G to 1N4007G
FEATURES
•Glass passivated
•High maximum operating
temperature
•Low leakage current
•Excellent stability
•Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
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LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
1N4001G −50 V
1N4002G −100 V
1N4003G −200 V
1N4004G −400 V
1N4005G −600 V
1N4006G −800 V
1N4007G −1000 V
VRcontinuous reverse voltage
1N4001G −50 V
1N4002G −100 V
1N4003G −200 V
1N4004G −400 V
1N4005G −600 V
1N4006G −800 V
1N4007G −1000 V
IF(AV) average forward current averaged over any 20 ms
period; Tamb =75°C; see Fig.2 −1.00 A
averaged over any 20 ms
period; Tamb = 100 °C; see Fig.2 −0.75 A
IFcontinuous forward current Tamb =75°C; see Fig.2 −1.00 A
IFRM repetitive peak forward current −10 A
IFSM non-repetitive peak forward current half sinewave; 60 Hz −30 A
Tstg storage temperature −65 +175 °C
Tjjunction temperature −65 +175 °C