AUIRFR8401
AUIRFU8401
VDSS 40V
RDS(on) typ. 3.2m
ID (Silicon Limited) 100A
max. 4.25m
ID (Package Limited) 100A
Features
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive and a wide variety of
other applications.
1 2017-10-03
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 100
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 71
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 100
IDM Pulsed Drain Current 400
PD @TC = 25°C Maximum Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.9
°C/W
RJA Junction-to-Ambient ( PCB Mount) ––– 50
RJA Junction-to-Ambient ––– 110
D-Pak
AUIRFR8401
I-Pak
AUIRFU8401
Base part number Package Type Standard Pack
Form Quantity
AUIRFU8401 I-Pak Tube 75 AUIRFU8401
AUIRFR8401 D-Pak Tube 75 AUIRFR8401
Tape and Reel Left 3000 AUIRFR8401TRL
Orderable Part Number
G D S
Gate Drain Source
G
S
D
D
S
G
D
Avalanche Characteristics
EAS Single Pulse Avalanche Energy (Thermally Limited) 67
EAS (tested) Single Pulse Avalanche Energy (Tested Limited) 94
IAR Avalanche Current See Fig. 14, 15, 24a, 24b A
EAR Repetitive Avalanche Energy mJ
mJ
Applications
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
HEXFET® Power MOSFET
AUIRFR/U8401
2 2017-10-03
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 100A by source
bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by TJmax , starting TJ = 25°C, L = 0.037mH, RG = 50, IAS = 60A, VGS =10V.
ISD 60A, di/dt 918A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
Ris measured at TJ approximately 90°C.
This value determined from sample failure population, starting TJ = 25°C, L=0.037mH, RG = 25, IAS = 60A, VGS =10V
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.2 4.25 m VGS = 10V, ID = 60A
VGS(th) Gate Threshold Voltage 2.2 ––– 3.9 V VDS = VGS, ID = 50µA
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 40V, VGS = 0V
––– ––– 150 VDS = 40V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Internal Gate Resistance ––– 2.0 ––– 
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs Forward Trans conductance 198 ––– ––– S VDS = 10V, ID = 60A
Qg Total Gate Charge ––– 42 63
nC
ID = 60A
Qgs Gate-to-Source Charge ––– 12 ––– VDS = 20V
Qgd Gate-to-Drain Charge ––– 14 ––– VGS = 10V
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 28 –––
td(on) Turn-On Delay Time ––– 7.9 –––
ns
VDD = 20V
tr Rise Time ––– 34 ––– ID = 30A
td(off) Turn-Off Delay Time ––– 25 ––– RG = 2.7
tf Fall Time ––– 24 ––– VGS = 10V
Ciss Input Capacitance ––– 2200 –––
pF
VGS = 0V
Coss Output Capacitance ––– 340 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 205 ––– ƒ = 1.0MHz, See Fig. 5
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 410 ––– VGS = 0V, VDS = 0V to 32V
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 495 ––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 100
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 400 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 60A,VGS = 0V 
dv/dt Peak Diode Recovery dv/dt ––– 3.2 –––
V/ns TJ = 175°C,IS = 60A,VDS = 40V
trr Reverse Recovery Time ––– 28 ––– ns TJ = 25°C
––– 29 ––– TJ = 125°C
Qrr Reverse Recovery Charge ––– 28 –––
nC TJ = 25°C
––– 31 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 1.6 ––– A TJ = 25°C
VR = 34V,
IF = 60A
di/dt = 100A/µs
AUIRFR/U8401
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Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 4 Normalized On-Resistance vs. Temperature
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 25°C
4.8V
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.3V
5.0V
BOTTOM 4.8V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 175°C
4.8V
VGS
TOP 15V
10V
7.0V
6.0V
5.5V
5.3V
5.0V
BOTTOM 4.8V
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VDS = 10V
60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 60A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 102030405060
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
VDS= 32V
VDS= 20V
VDS= 8.0V
ID= 60A
AUIRFR/U8401
4 2017-10-03
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode Forward Voltage
Fig. 9 Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig. 11 Typical COSS Stored Energy
Fig 10. Drain-to-Source Breakdown Voltage
0.0 0.4 0.8 1.2 1.6 2.0
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
0.1 1 10
VDS, Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
100µsec
DC
Limited by
Package
OPERATION IN THIS AREA
LIMITED BY RDS(on)
25 50 75 100 125 150 175
TC, Case Temperature (°C)
0
20
40
60
80
100
ID, Drain Current (A)
-60 -40 -20 020 40 60 80 100120140160180
TJ , Temperature ( °C )
39
40
41
42
43
44
45
46
47
48
49
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 1.0mA
010 20 30 40
VDS, Drain-to-Source Voltage (V)
0.0
0.1
0.2
0.3
Energy (µJ)
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
40
80
120
160
200
240
EAS, Single Pulse Avalanche Energy (mJ)
ID
TOP 8.5A
20A
BOTTOM 60A
AUIRFR/U8401
5 2017-10-03
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy Vs. Temperature
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current Vs. Pulse width
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.01
0.1
1
10
100
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
70
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 60A
AUIRFR/U8401
6 2017-10-03
Fig 16. On-Resistance vs. Gate Voltage
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 21 - Typical Stored Charge vs. dif/dt
4 8 12 16 20
VGS, Gate-to-Source Voltage (V)
0
4
8
12
16
RDS(on), Drain-to -Source On Resistance (m)
TJ = 25°C
TJ = 125°C
ID = 60A
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th) Gate threshold Voltage (V)
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
Fig. 17 - Threshold Voltage vs. Temperature
0200 400 600 800 1000
diF /dt (A/µs)
0
2
4
6
8
IRRM (A)
IF = 40A
VR = 34V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
2
4
6
8
IRRM (A)
IF = 60A
VR = 34V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
20
40
60
80
100
QRR (nC)
IF = 40A
VR = 34V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
20
40
60
80
100
QRR (nC)
IF = 60A
VR = 34V
TJ = 25°C
TJ = 125°C
AUIRFR/U8401
7 2017-10-03
Fig 22. Typical On-Resistance vs. Drain Current
020 40 60 80 100 120
ID, Drain Current (A)
2.0
4.0
6.0
8.0
10.0
RDS(on), Drain-to -Source On Resistance (m)
VGS = 6.0V
VGS = 10V
AUIRFR/U8401
8 2017-10-03
Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 25a. Switching Time Test Circuit Fig 25b. Switching Time Waveforms
Fig 24a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 24b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 26b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 26a. Gate Charge Test Circuit
AUIRFR/U8401
9 2017-10-03
D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches))
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRFR8401
Lot Code
Part Number
IR Logo
D-Pak (TO-252AA) Part Marking Information
AUIRFR/U8401
10 2017-10-03
I-Pak (TO-251AA) Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRFU8401
Lot Code
Part Number
IR Logo
I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches)
AUIRFR/U8401
11 2017-10-03
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
AUIRFR/U8401
12 2017-10-03
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
D-Pak MSL1
I-Pak
ESD
Machine Model Class M2 (+/- 200V)†
AEC-Q101-002
Human Body Model Class H1B (+/- 1000V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 2000V)†
AEC-Q101-005
RoHS Compliant Yes
Moisture Sensitivity Level
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
12/14/2015  Updated datasheet with corporate template
 Corrected ordering table on page 1.
01/28/2016  Corrected Qualification table (Human Body model value) on page 12.
10/03/2017  Corrected typo error on part marking on page 9 and 10.
† Highest passing voltage.