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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
© Semiconductor Components Industries, LLC, 2002
March, 2017 − Rev. 2 1Publication Order Number:
TIP147T/D
TIP147T
PNP Epitaxial Silicon
Darlington Transistor
Features
Monolithic Construction with Built−in Base−Emitter Shunt Resistors
High DC Current Gain: hFE = 1000 at VCE = −4 V, IC = −5 A
(Minimum)
Industrial Use
Complement to TIP142T
ORDERING INFORMATION
Part Number Top Mark Package Packing
Method
TIP147T TIP147 TO−220 3L (Single Gauge) Bulk
TIP147TTU TIP147 TO−220 3L (Single Gauge) Rail
TO−220
MOLDED
CASE 340AT
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1.Base 2.Collector 3.Emitter
1TO−220
B
C
E
R1 R2
R1 ^ 8 kW
R2 ^ 0.12 kW
EQUIVALENT CIRCUIT
TIP147T
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2
Table 1. ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector−Base Voltage −100 V
VCEO Collector−Emitter Voltage −100 V
VEBO Emitter−Base Voltage −5 V
ICCollector Current (DC) −10 A
ICP Collector Current (Pulse) −15 A
IBBase Current (DC) −0.5 A
PCCollector Dissipation (TC = 25°C) 80 W
TJJunction Temperature 150 °C
TSTG Storage Temperature Range −65 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
Table 2. ELECTRICAL CHARACTERISTICS Values are at TC = 25°C unless otherwise noted.
Symbol Parameter Conditions Min Typ Max Unit
VCEO(sus) Collector−Emitter Sustaining Voltage IC = −30 mA, IB = 0 −100 V
ICEO Collector Cut−Off Current VCE = −50 V, IB = 0−2 mA
ICBO Collector Cut−Off Current VCB = −100 V, IE = 0 −1 mA
IEBO Emitter Cut−Off Current VEB = −5 V, IC = 0 −2 mA
hFE DC Current Gain VCE = −4 V, IC = −5 A 1000
VCE = −4 V, IC = −10 A 500
VCE(sat) Collector−Emitter Saturation Voltage IC = −5 A, IB = −10 mA −2 V
IC = −10 A, IB = −40 mA −3
VBE(sat) Base−Emitter Saturation Voltage IC = −10 A, IB = −40 mA −3.5 V
VBE(on) Base−Emitter On Voltage VCE = −4 V, IC = −10 A −3 V
tD Delay Time VCC = −30 V, IC = −5 A,
IB1 = −20 mA,
IB2 = 20 mA,
RL = 6 W
0.15 ms
tR Rise Time 0.55 ms
tSTG Storage Time 2.50 ms
tF Fall Time 2.50 ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TIP147T
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3
Typical Performance Characteristics
−0 −1 −2 −3 −4 −5
−0
−1
−2
−3
−4
−5
−6
−7
−8
−9
−10
IB = −2000AIB = −1800A
IB = −1600A
IB = −1400A
IB = −1200A
IB = −1000A
IB = −800A
IB = −600A
IB = −400A
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR− EMITTER VOLTAGE
−0.1 −1 −10 −100
100
1000
10000
100000 VCE = − 4 V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
−0.1 −1 −10 −100
−0.01
−0.1
−1
−10 IC=−500I
B
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
−1 −10 −100 1000
−10
−100
−1000 f=0.1MHz
VCB[V], COLLECTOR−BASE VOLTAGE
Cob[pF], CAPACITANCE
−1 −10 −100 1000
−0.1
−1
−10
−100
TIP146T
TIP147T
TIP145T
D
C
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR−EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector−Emitter Voltage and
Base−Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
TIP147T
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4
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE O
TIP147T
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5
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and
hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright
laws and is not for resale in any manner.
P
UBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
TIP147T/D
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al
Sales Representative
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1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
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Phone: 3036752175 or 8003443860 Toll Free USA/Canada
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