NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
FEATURES
* 140 Volt VCEO
* 1 Amp continuous current
*P
tot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX454 ZTX455 UNIT
Collector-Base Voltage VCBO 140 160 V
Collector-Emitter Voltage VCEO 120 140 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL ZTX454 ZTX455 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 140 160 V IC=100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) 120 140 V IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 55V
IE=100µA
Collector Cut-Off
Current
ICBO 0.1
0.1 µA
µA
VCB
=140V
VCB
=120V
Emitter Cut-Off
Current
IEBO 0.1 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.7
1.0
0.7 V IC=150mA, IB=15mA
IC=200mA, IB=20mA
Static Forward
Current Transfer
Ratio
hFE 100
30
10
300 100
10
300 IC=150mA, VCE
=10V*
IC=200mA, VCE
=1V*
IC=1A, VCE=10V*
Transition
Frequency
fT100 100 MHz IC=50mA, VCE
=10V
f=100MHz
Output Capacitance Cobo 15 15 pF VCB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Typical
E-Line
TO92 Compatible
ZTX454
ZTX455
3-179
C
B
E
TYPICAL CHA RACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC V
BE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
h
FE
- Normalised Gain (%)
V
BE(sat)
- (Volts)
V
BE
- (Volts)
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Opera t ing Area
100110
0.001
0.01
0.1
1Single Pulse Test at T amb=25°C
D.C.
1s
100ms
10ms
1.0ms
100µs
0.001 0.01 100.1 1
20
40
60
80
100
0.2 0.001 0.1 1
0.4
0.6
1.0
00.001 0.01 1
0.1
0.1
0.2
0.3
0.4
VCE=10V
IC/IB=10
IC/IB=10
Typical Switching Speeds
IC - Collector Current (Amps)
Switching time
0.1 1
0.01
tf
100
0
td
nS
50
0.01
0.0001 0.001 1
0.01 0.1
0.6
0.8
1.0
1.2
VCE=10V
0.4
0.8
ZTX454
ZTX455
tf
ns
900
tr
ns
300
200
100
400
500
0
600
500
400
700
800
300
ts
µS
1000
ts
td
tr
0
3
2
1
6
5
4
7
IB1=IB2=IC/10
VCE=10V
ZTX454
ZTX455
3-180
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
FEATURES
* 140 Volt VCEO
* 1 Amp continuous current
*P
tot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX454 ZTX455 UNIT
Collector-Base Voltage VCBO 140 160 V
Collector-Emitter Voltage VCEO 120 140 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL ZTX454 ZTX455 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 140 160 V IC=100µA
Collector-Emitter
Sustaining Voltage
VCEO(sus) 120 140 V IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 55V
IE=100µA
Collector Cut-Off
Current
ICBO 0.1
0.1 µA
µA
VCB
=140V
VCB
=120V
Emitter Cut-Off
Current
IEBO 0.1 0.1 µAVEB
=4V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.7
1.0
0.7 V IC=150mA, IB=15mA
IC=200mA, IB=20mA
Static Forward
Current Transfer
Ratio
hFE 100
30
10
300 100
10
300 IC=150mA, VCE
=10V*
IC=200mA, VCE
=1V*
IC=1A, VCE=10V*
Transition
Frequency
fT100 100 MHz IC=50mA, VCE
=10V
f=100MHz
Output Capacitance Cobo 15 15 pF VCB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Typical
E-Line
TO92 Compatible
ZTX454
ZTX455
3-179
C
B
E
TYPICAL CHA RACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC V
BE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
h
FE
- Normalised Gain (%)
V
BE(sat)
- (Volts)
V
BE
- (Volts)
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Opera t ing Area
100110
0.001
0.01
0.1
1Single Pulse Test at T amb=25°C
D.C.
1s
100ms
10ms
1.0ms
100µs
0.001 0.01 100.1 1
20
40
60
80
100
0.2 0.001 0.1 1
0.4
0.6
1.0
00.001 0.01 1
0.1
0.1
0.2
0.3
0.4
VCE=10V
IC/IB=10
IC/IB=10
Typical Switching Speeds
IC - Collector Current (Amps)
Switching time
0.1 1
0.01
tf
100
0
td
nS
50
0.01
0.0001 0.001 1
0.01 0.1
0.6
0.8
1.0
1.2
VCE=10V
0.4
0.8
ZTX454
ZTX455
tf
ns
900
tr
ns
300
200
100
400
500
0
600
500
400
700
800
300
ts
µS
1000
ts
td
tr
0
3
2
1
6
5
4
7
IB1=IB2=IC/10
VCE=10V
ZTX454
ZTX455
3-180
