2N6028 Programmable Unijunction Transistor Description: Designed to enable the engineer to "program" unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Applications include thyristor-trigger, oscillator, pulse and timing circuits. This device may also be used in special thyristor applications due to availability of an anode gate. Supplied in an inexpensive TO-92 type plastic package for high-volume requirements, this package is readily adaptable for use in automatic insertion equipment. Features: D Programmable - RBB, , IV, and IP D Low On-State Voltage - 1.5V Maximum @ IF = 50mA D Low Gate-to-Anode Leakage Current - 10nA Maximum D High Peak Output Voltage - 11V Typical D Low Offset Voltage - 0.35V Typical (RG = 10kW) Absolute Maximum Ratings: (TJ = +25C, Note 1 unless otherwise specified) Power Dissipation, PF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/C DC Forward Anode Current, IT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mA/C DC Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Repetitive Peak Forward Current (1% Duty Cycle), ITRM 100s Pulse Width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A 20s Pulse Width . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Non-Repetitive Peak Forward Current (10ms Pulse Width), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Gate-to-Cathode Forward Voltage, VGKF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Gate-to-Cathode Reverse Voltage, VGKR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5V Gate-to-Anode Reverse Voltage, VGAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Anode-to-Cathode Voltage (Note 2), VAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V capacitive Discharge Energy (Note 3), E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250J Power Dissipation (Note 4), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 to +100C Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Lead Temperature (During Soldering, < 1/16" from case, 10sec max), TL . . . . . . . . . . . . . . . +260C Note 1. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Note 2. Anode Positive, RGA = 1000W; Anode Negative, RGA = Open Note 3. E = 0.5 CV2capacitor discharge energy limiting resistor and repetition. Note 4. Derate current an power above +25C. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Peak Current IP Offset Voltage VT Valley Current IV Gate-to-Anode Leakage Current Gate-to-Cathode Leakage Current IGAO IGKS Test Conditions VS = 10V Min Typ Max Unit RG = 1M - 0.08 0.15 A RG = 10k - 0.70 1.0 A RG = 1M 0.2 0.50 0.6 V RG = 10k 0.2 0.35 0.6 V RG = 1M - 18 25 A RG = 10k 25 10 - A RG = 200 1.0 - - mA TA = +25C - 1.0 10 nA TA = +75C - 3.0 - nA VS = 40V, Anode-to-Cathode Shorted - 5.0 50 nA - 0.8 1.5 V VS = 10V VS = 10V VS = 40V, Cathode Open Forward Voltage VF IF = 50mA Peak, Note 5 Peak Output Voltage Vo VG = 20V, CC = 0.2F 6.0 11 - V Pulse Voltage Rise Time tr VG = 20V, CC = 0.2F - 40 80 ns Note 5. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max AG K .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max