2N6028
Programmable Unijunction Transistor
Description:
Designed to enable the engineer to “program” unijunction characteristics such as RBB, , IV, and IP
by merely selecting two resistor values. Applications include thyristor−trigger, oscillator, pulse and
timing circuits. This device may also be used in special thyristor applications due to availability of an
anode gate. Supplied in an inexpensive TO−92 type plastic package for high−volume requirements,
this package is readily adaptable for use in automatic insertion equipment.
Features:
DProgrammable − RBB, , IV, and IP
DLow On−State Voltage − 1.5V Maximum @ IF = 50mA
DLow Gate−to−Anode Leakage Current − 10nA Maximum
DHigh Peak Output Voltage − 11V Typical
DLow Offset Voltage − 0.35V Typical (RG = 10kW)
Absolute Maximum Ratings: (TJ = +25C, Note 1 unless otherwise specified)
Power Dissipation, PF300mW...........................................................
Derate above +25C 4.0mW/C....................................................
DC Forward Anode Current, IT150mA....................................................
Derate above +25C 2.67mA/C....................................................
DC Gate Current, IG50mA.............................................................
Repetitive Peak Forward Current (1% Duty Cycle), ITRM
100s Pulse Width 1A............................................................
20s Pulse Width 2A.............................................................
Non−Repetitive Peak Forward Current (10ms Pulse Width), ITSM 5A..........................
Gate−to−Cathode Forward Voltage, VGKF 40V.............................................
Gate−to−Cathode Reverse Voltage, VGKR −5V.............................................
Gate−to−Anode Reverse Voltage, VGAR 40V...............................................
Anode−to−Cathode Voltage (Note 2), VAK 40V............................................
capacitive Discharge Energy (Note 3), E 250J............................................
Power Dissipation (Note 4), PD300mW...................................................
Operating Temperature Range, Topr −50 to +100C.........................................
Junction Temperature Range, TJ−50 to +125C...........................................
Storage Temperature Range, Tstg −55 to +150C..........................................
Thermal Resistance, Junction−to−Case, RthJC 75C/W.....................................
Thermal Resistance, Junction−to−Ambient, RthJA 200C/W..................................
Lead Temperature (During Soldering, < 1/16” from case, 10sec max), TL+260C...............
Note 1. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are
stress ratings only. Functional operation above the Recommended Operating Conditions is
not implied. Extended exposure to stresses above the Recommended Operating Conditions
may affect device reliability.
Note 2. Anode Positive, RGA = 1000W; Anode Negative, RGA = Open
Note 3. E = 0.5 CV2capacitor discharge energy limiting resistor and repetition.
Note 4. Derate current an power above +25C.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Current IPVS = 10V RG = 1M−0.08 0.15 A
RG = 10k−0.70 1.0 A
Offset Voltage VTVS = 10V RG = 1M0.2 0.50 0.6 V
RG = 10k0.2 0.35 0.6 V
Valley Current IVVS = 10V RG = 1M−18 25 A
RG = 10k25 10 −A
RG = 2001.0 − − mA
Gate−to−Anode Leakage Current IGAO VS = 40V,
Cathode Open
TA = +25C−1.0 10 nA
TA = +75C−3.0 −nA
Gate−to−Cathode Leakage Current IGKS VS = 40V, Anode-to-Cathode Shorted −5.0 50 nA
Forward Voltage VFIF = 50mA Peak, Note 5 −0.8 1.5 V
Peak Output Voltage VoVG = 20V, CC = 0.2F 6.0 11 −V
Pulse Voltage Rise Time trVG = 20V, CC = 0.2F−40 80 ns
Note 5. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.021 (.445) Dia Max
A G K
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.165
(4.2)
Max
.500
(12.7)
Min