FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Features Description Guaranteed operating temperature range of -20C to The FOD3181 is a 0.5A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode optically coupled to a CMOS integrated circuit with a power stage. The power stage consists of a PMOS pullup and a NMOS pull-down power transistor. It is ideally suited for high frequency driving of MOSFETs used in Plasma Display Panels (PDPs), motor control invertor applications, and high performance DC/DC converters. +85C 0.5A minimum peak output current High speed response: 500ns max propagation delay over temperature range Wide VCC operating range: 10V to 20V 5000Vrms, 1 minute isolation Minimum creepage distance of 7.0mm Minimum clearance distance of 7.0mm C-UL, UL and VDE* approved 10kV/s minimum common mode rejection (CMR) at VCM = 1,500V RDS(ON) of 1.5 (typ.) offers lower power dissipation The device is packaged in an 8-pin dual in-line housing compatible with 260C reflow processes for lead free solder compliance. Applications Plasma Display Panel High performance DC/DC convertor High performance switch mode power supply High performance uninterruptible power supply Isolated Power MOSFET gate drive *Requires `V' ordering option Functional Block Diagram Package Outlines FOD3181 NO CONNECTION 1 8 VCC 8 ANODE 2 7 OUTPUT CATHODE 3 6 OUTPUT NO CONNECTION 4 5 VEE 1 8 8 1 Note: A 0.1F bypass capacitor must be connected between pins 5 and 8. (c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8 1 www.fairchildsemi.com FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler August 2008 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units TSTG Storage Temperature -40 to +125 C TOPR Operating Temperature -20 to +85 C Junction Temperature -20 to +125 C TJ TSOL Lead Solder Temperature 260 for 10 sec. C IF(AVG) Average Input Current(1) 25 mA Minimum Rate of Rise of LED Current 250 ns Peak Transient Input Current (<1s pulse width, 300pps) 1.0 A 5 V IF(tr) IF(TRAN) VR Reverse Input Voltage IOH(PEAK) "High" Peak Output Current(2) 1.5 A IOL(PEAK) Current(2) 1.5 A Supply Voltage -0.5 to 25 V Output Voltage VCC - VEE VO(PEAK) "Low" Peak Output 0 to VCC V PO Output Power Dissipation(4) 250 mW PD Total Power Dissipation(4) 300 mW Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Value Units Power Supply 10 to 20 V IF(ON) Input Current (ON) 12 to 18 mA VF(OFF) Input Voltage (OFF) VCC - VEE TOPR Parameter Operating Temperature (c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8 0 to 0.8 V -20 to +85 C www.fairchildsemi.com 2 FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Absolute Maximum Ratings (TA = -20C to +70C) Symbol Parameter Test Conditions Min. Typ.* Max. Unit IOH High Level Output Current(2)(3) VOH = (VCC - VEE - 1V) 0.5 A IOL Current(2)(3) VOL = (VCC - VEE - 1V) 0.5 A Low Level Output Output Voltage(5)(6) VOH High Level VOL Low Level Output Voltage(5)(6) IO = 100mA ICCH High Level Supply Current Output Open IF = 7 to 10mA ICCL Low Level Supply Current Output Open VF = 0 to 0.8V IFLH Threshold Input Current Low to High IO = 0mA, VO > 5V VFHL Threshold Input Voltage High to Low IO = 0mA, VO < 0.5V 0.8 Input Forward Voltage IF = 10mA 1.2 Temperature Coefficient of Forward Voltage IF = 10mA BVR Input Reverse Breakdown Voltage IR = 10A CIN Input Capacitance f = 1MHz, VF = 0V VF VF / TA IO = -100mA VCC - 0.5 V VEE + 0.5 V 4.8 6.0 mA 5.0 6.0 mA 10 mA V 1.5 1.8 V -1.5 mV/C 5 V 60 pF Switching Characteristics (TA = -20C to +70C) Over recommended operating conditions unless otherwise specified. Symbol Test Conditions Parameter Min. Typ.* Max. Unit tPLH Propagation Delay Time to High IF = 10mA, Rg = 10, f = 250kHz, Output Level(7) Duty Cycle = 50%, Cg = 10nF 50 135 500 ns tPHL Propagation Delay Time to Low Output Level(7) 50 105 500 ns tr Rise Time tf Fall Time CL = 10nF, Rg = 10 75 ns 55 ns | CMH | Output High Level Common Mode Transient Immunity(8)(9) TA = +25C, If = 7 to 10mA, VCM = 1.5kV, VCC = 20V 10 kV/s | CML | Output Low Level Common Mode Transient Immunity(8)(10) TA = +25C, Vf = 0V, VCM = 1.5kV, VCC = 20V 10 kV/s Isolation Characteristics (TA = -20C to +70C) Symbol Parameter Isolation Voltage(11)(12) VISO Withstand RI-O Resistance (input to output)(12) CI-O Capacitance (input to output) Test Conditions Min. TA = 25C, R.H. < 50%, t = 1min., II-O 20 A 5000 Typ.* Max. Unit Vrms VI-O = 500V 1011 Freq. = 1MHz 1 pF * All typical values at TA = 25C (c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8 www.fairchildsemi.com 3 FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Electrical-Optical Characteristics (DC) Over recommended operating conditions unless otherwise specified. 6. 7. Maximum pulse width = 1ms, maximum duty cycle = 20%. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the VO signal. 8. 9. Pin 1 and 4 need to be connected to LED common. Common mode transient immunity in the high state is the maximum tolerable dVCM /dt of the common mode pulse VCM to assure that the output will remain in the high state (i.e. VO > 10.0V). 10. Common mode transient immunity in a low state is the maximum tolerable dVCM /dt of the common mode pulse, VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V). 11. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms, 60Hz for 1 second (leakage detection current limit II-O < 5A). 12. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together. (c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8 www.fairchildsemi.com 4 FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Notes: 1. Derate linearly above +70C free air temperature at a rate of 0.3mA/C. 2. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01F) + 0.5, frequency = 8kHz, 50% DF. 3. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01F) + 40, frequency = 8kHz, 50% DF. 4. No derating required across operating temperature range. 5. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VCC as IOH approaches zero amps. Fig. 2 Low To High Input Current Threshold vs. Ambient Temperature Fig. 1 Input Forward Current vs. Forward Voltage 6 IFLH - LOW TO HIGH INPUT CURRENT THRESHOLD (mA) I F - FORWARD CURRENT (mA) 100 10 TA = -40C TA = 100C 1 TA = 25C 0.1 0.01 V = 10 to 20V CC VEE = 0 Output = Open 5 4 3 2 1 0 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -40 2.2 -20 Fig. 3 Output Low Voltage vs. Ambient Temperature (VOH - VCC) - HIGH OUTPUT VOLTAGE DROP (V) V OL - OUTPUT LOW VOLTAGE (V) VF(OFF) = -3.0V to 0.8V IOUT = 100mA V = 10V to 20V CC VEE = 0 0.20 0.15 0.10 0.05 0.00 -40 -20 0 20 40 60 40 60 80 100 80 0.00 V CC = 10 to 20V, VEE = 0 IF = 10mA to 16mA IOUT = -100 mA -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 100 -40 -20 TA - AMBIENT TEMPERATURE (C) 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Fig. 5 Supply Current vs. Ambient Temperature Fig. 6 Supply Current vs. Supply Voltage 6.2 6.2 V CC = 20V, VEE = 0 IF = 10mA (for ICCH) IF = 0mA (for ICCL) IF = 10mA (for ICCH) IF = 0mA (for ICCL) 5.8 I CC - SUPPLY CURRENT (mA) 5.8 I CC - SUPPLY CURRENT (mA) 20 Fig. 4 High Output Voltage Drop vs. Ambient Temperature 0.30 0.25 0 TA - AMBIENT TEMPERATURE (C) VF - FORWARD VOLTAGE (V) 5.4 ICCL 5.0 ICCH 4.6 4.2 3.8 TA = 25oC, VEE = 0V 5.4 5.0 ICCL ICCH 4.6 4.2 3.8 -40 -20 0 20 40 60 80 100 10 TA - AMBIENT TEMPERATURE (C) (c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8 12 14 16 18 20 VCC - SUPPLY VOLTAGE (V) www.fairchildsemi.com 5 FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Typical Performance Curves Fig. 8 Propagation Delay vs. Forward LED Current Fig. 7 Propagation Delay vs. Load Capacitance 200 200 VCC = 20V, VEE = 0 RG = 10, CG = 10nF f = 250 kHz, D. Cycle = 50% TA = 25oC VCC = 20V, VEE = 0 IF = 10mA, TA = 25oC RG = 10, CG = 10nF f = 250 kHz, D. Cycle = 50% t P - PROPAGATION DELAY (ns) t P - PROPAGATION DELAY (ns) 180 160 tPHL 140 120 tPLH 100 80 180 160 tPHL 140 120 tPLH 100 80 60 60 5 10 15 20 25 6 8 CG - LOAD CAPACITANCE (nF) 12 14 16 Fig. 10 Propagation Delay vs. Ambient Temperature Fig. 9 Propagation Delay vs. Series Load Resistance 200 200 VCC = 20V, VEE = 0 VCC = 20V, VEE = 0 IF = 10mA, TA = 25oC CG = 10nF f = 250 kHz, D. Cycle = 50% 180 t P - PROPAGATION DELAY (ns) t P - PROPAGATION DELAY (ns) 10 IF - FORWARD LED CURRENT (mA) 160 140 tPHL 120 tPLH 100 80 IF = 10mA RG = 10, CG = 10nF f = 250kHz, D. Cycle = 50% 180 160 140 tPHL 120 tPLH 100 80 60 60 10 20 30 40 50 -40 RG - SERIES LOAD RESISTANCE () -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Fig. 11 Propagation Delay vs. Supply Voltage 180 t P - PROPAGATION DELAY (ns) IF = 10mA, TA = 25oC RG = 10, CG = 10nF f = 250 kHz, D. Cycle = 50% 160 140 tPHL 120 tPLH 100 80 60 10 15 20 25 VCC - SUPPLY VOLTAGE (V) (c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8 www.fairchildsemi.com 6 FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Typical Performance Curves (Continued) Through Hole 0.4" Lead Spacing PIN 1 ID. 4 3 2 PIN 1 ID. 1 4 3 2 1 0.270 (6.86) 0.250 (6.35) 5 6 7 0.270 (6.86) 0.250 (6.35) 8 5 6 0.070 (1.78) 0.045 (1.14) 0.020 (0.51) MIN 0.200 (5.08) 0.140 (3.55) 0.154 (3.90) 0.120 (3.05) 0.022 (0.56) 0.016 (0.41) 7 8 0.390 (9.91) 0.370 (9.40) SEATING PLANE SEATING PLANE 0.390 (9.91) 0.370 (9.40) 0.016 (0.40) 0.008 (0.20) 0.100 (2.54) TYP 0.070 (1.78) 0.045 (1.14) 0.004 (0.10) MIN 0.200 (5.08) 0.140 (3.55) 15 MAX 0.154 (3.90) 0.120 (3.05) 0.300 (7.62) TYP 0.022 (0.56) 0.016 (0.41) 0.016 (0.40) 0.008 (0.20) 0.100 (2.54) TYP Surface Mount 0 to 15 0.400 (10.16) TYP 8-Pin DIP - Land Pattern 0.390 (9.91) 0.370 (9.40) 4 3 2 1 0.070 (1.78) PIN 1 ID. 0.060 (1.52) 0.270 (6.86) 0.250 (6.35) 5 6 7 0.100 (2.54) 8 0.295 (7.49) 0.070 (1.78) 0.045 (1.14) 0.020 (0.51) MIN 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP Lead Coplanarity : 0.004 (0.10) MAX 0.415 (10.54) 0.300 (7.62) TYP 0.030 (0.76) 0.016 (0.41) 0.008 (0.20) 0.045 (1.14) 0.315 (8.00) MIN 0.405 (10.30) MAX. Note: All dimensions are in inches (millimeters) (c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8 www.fairchildsemi.com 7 FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Package Dimensions Option Order Entry Identifier (Example) No option FOD3181 S FOD3181S SD FOD3181SD T FOD3181T 0.4" Lead Spacing V FOD3181V VDE 0884 TV FOD3181TV VDE 0884, 0.4" Lead Spacing SV FOD3181SV VDE 0884, Surface Mount SDV FOD3181SDV Description Standard Through Hole Device Surface Mount, Lead Bend Surface Mount, Tape and Reel VDE 0884, Surface Mount, Tape and Reel Marking Information 1 3181 XX YY B V 3 2 6 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) 4 Two digit year code, e.g., `03' 5 Two digit work week ranging from `01' to `53' 6 Assembly package code (c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8 www.fairchildsemi.com 8 FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Ordering Information D0 P0 t K0 P2 E F A0 W1 d t P User Direction of Feed Symbol W W B0 Description D1 Dimension in mm Tape Width 16.0 0.3 Tape Thickness 0.30 0.05 P0 Sprocket Hole Pitch 4.0 0.1 D0 Sprocket Hole Diameter 1.55 0.05 E Sprocket Hole Location 1.75 0.10 F Pocket Location 7.5 0.1 4.0 0.1 P2 P Pocket Pitch A0 Pocket Dimensions 12.0 0.1 10.30 0.20 B0 10.30 0.20 K0 4.90 0.20 W1 d R (c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8 Cover Tape Width 1.6 0.1 Cover Tape Thickness 0.1 max Max. Component Rotation or Tilt 10 Min. Bending Radius 30 www.fairchildsemi.com 9 FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Carrier Tape Specifications 245 C, 10-30 s Temperature (C) 300 260 C peak 250 200 150 Time above 183C, <160 sec 100 50 Ramp up = 2-10C/sec 0 0.5 0 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) * Peak reflow temperature: 260 C (package surface temperature) * Time of temperature higher than 183 C for 160 seconds or less * One time soldering reflow is recommended Output Power Derating The output power is the product of the average output current squared times the output transistor's RDS(ON): The maximum package power dissipation is 295mW. The package is limited to this level to ensure that under normal operating conditions and over extended temperature range that the semiconductor junction temperatures do not exceed 125C. The package power is composed of three elements; the LED, static operating power of the output IC, and the power dissipated in the output power MOSFET transistors. The power rating of the output IC is 250mW. This power is divided between the static power of the integrated circuit, which is the product of IDD times the power supply voltage (VDD - VEE). The maximum IC static output power is 150mW, (VDD - VEE) = 25V, IDD = 6mA. This maximum condition is valid over the operational temperature range of -40C to +100C. Under these maximum operating conditions, the output of the power MOSFET is allowed to dissipate 100mW of power. PO(AVG) = IO(AVG)2 * RDS(ON) The IO(AVG) is the product of the duty factor times the peak current flowing in the output. The duty factor is the ratio of the `on' time of the output load current divided by the period of the operating frequency. An RDS(ON) of 2.0 results in an average output load current of 200mA. The load duty factor is a ratio of the average output time of the power MOSFET load circuit and period of the driving frequency. The maximum permissible, operating frequency is determined by the load supplied to the output at its resulting output pulse width. Figure 13 shows an example of a 0.03F gate to source capacitance with a series resistance of 40. This reactive load results in a composite average pulse width of 1.5s. Under this load condition it is not necessary to derate the absolute maximum output current out to 250kHz. The absolute maximum output power dissipation versus ambient temperature is shown in Figure 12. The output driver is capable of supplying 100mW of output power over the temperature range from -40C to 87C. The output derates to 90mW at the absolute maximum operating temperature of 100C. Fig. 13 Output Current Derating vs. Frequency IO - PEAK OUTPUT CURRENT (A) 1.5 Fig. 12 Absolute Maximum Power Dissipation vs. Ambient Temperature POWER DISSIPATION (W) 0.15 VDD - VEE = Max. = 25V IDD = 6mA LED Power = 45mW 0.1 0.05 TA = -40C to 100C Load = 0.03F + 40 VDD = 20V IF = 12mA LED Duty Factor = 50% Output Pulse Width = 1.5s 1 0.5 0 1 10 250 F - FREQUENCY (kHz) 0 -40 -20 0 20 40 60 80 85 TA - AMBIENT TEMPERATURE (C) (c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8 www.fairchildsemi.com 10 FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Reflow Profile Figure 14 illustrates the relationship of the LED input drive current and the device's output voltage and sourcing and sinking currents. The 0.03F capacitor load represents the gate to source capacitance of a very large power MOSFET transistor. A single supply voltage of 20V is used in the evaluation. This device is tested and specified when driving a complex reactive load. The load consists of a capacitor in the series with a current limiting resistor. The capacitor represents the gate to source capacitance of a power MOSFET transistor. The test load is a 0.03uF capacitor in series with an 40 resistor. The LED test frequency is 10.0kHz with a 50% duty cycle. The combined IOH and IOL output load current duty factor is 0.6% at the test frequency. Figure 15 shows the test schematic to evaluate the output voltage and sourcing and sinking capability of the device. The IOH and IOL are measured at the peak of their respective current pulses. IF = 8mA LED OFF ON 20V N-Channel (ON) P-Channel (ON) OUTPUT 0 IOH = 0.5A Load Current IOL = 0.5A 1s/Div Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive Pulse Generator FOD3181 8 1 0.1F 2 7 IOMON VO 0.33F IFMON 100 3 6 4 5 40 22F 100 Figure 15. Test Schematic (c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8 www.fairchildsemi.com 11 FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler IOH and IOL Test Conditions PDP SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM FPSTM F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTMe-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) (R) Fairchild Semiconductor FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * (R) (R) The Power Franchise TinyBoostTM TinyBuckTM (R) TinyLogic TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM (R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 (c)2003 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.8 www.fairchildsemi.com 12 FOD3181 -- 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.