TIG062E8
No. A1480-1/5
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
• Low-saturation voltage.
• Low voltage drive (3V).
• Enhansment type.
• Built-in Gate-to-Emitter protection diode.
• Mounting Height 0.9mm, Mounting Area 8.12mm2.
• dv / dt guarantee*.
• Halogen free compliance.
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Emitter Voltage VCES 400 V
Gate-to-Emitter Voltage (DC) VGES ±6 V
Gate-to-Emitter Voltage (Pulse) VGES PW≤1ms ±8 V
Collector Current (Pulse)
ICP1C
M=150μF, V GE=3V 100 A
ICP2C
M=100μF, V GE=3.3V 130 A
ICP3C
M=100μF, V GE=4V 150 A
Maximum Collector-to-Emitter dv / dt dVCE / dt VCE≤320V, starting Tch=25°C 400 V /
μ
s
Channel Temperature Tch 150 °C
Storage Temperature Tstg -40 to +150 °C
Marking : ZC
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1.
Ordering number : ENA1480A
O2109 TK IM TC-00002170 / 61009PJ MS IM TC-00001992
SANYO Semiconductors
DATA SHEET
TIG062E8 N-Channel IGBT
Light-Controlling Flash Applications
www.semiconductor-sanyo.com/network
TIG062E8
No. A1480-2/5
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector-to-Emitter Breakdown Voltage V(BR)CES IC=2mA, VGE=0V 400 V
Collector-to-Emitter Cutoff Current ICES V
CE=320V, VGE=0V 10
μ
A
Gate-to-Emitter Leakage Current IGES VGE=±6V, VCE=0V ±10
μ
A
Gate-to-Emitter Threshold Voltage VGE(off) VCE=10V, IC=1mA 0.4 0.9 V
Collector-to-Emitter Saturation Voltage VCE(sat) IC=100A, VGE=3V 5 8 V
Input Capacitance Cies VCE=10V, f=1MHz 2400 pF
Output Capacitance Coes VCE=10V, f=1MHz 32 pF
Reverse Transfer Capacitance Cres VCE=10V, f=1MHz 24 pF
Package Dimensions Electrical Connection
unit : mm (typ)
7011A-004
Fig.1 Large Current R Load Switching Circuit
Note1. Gate Series Resistance RG ≥ 250Ω is recommended for protection purpose at the time of turn OFF. However,
if dv / dt ≤ 400V / μs is satisfi ed at customer’s actual set evaluation, RG < 250Ω can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.
87 6 5
12 3 4 Top view
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collecto
r
6 : Collecto
r
7 : Collecto
r
8 : Collecto
r
100kΩ
CM
RL
RG
VCC
+
TIG062E8
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : ECH8
14
85
0.15
0 to 0.02
0.25
0.25
2.8
2.3
0.65
2.9
0.3
0.9
0.07
Top View
Bottom View
TIG062E8
No. A1480-3/5
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
IC -- VGE
Gate-to-Emitter Voltage, VGE -- V
Collector Current, IC -- A
Case Temperature, Tc -- °C
Gate-to-Emitter Cutoff Voltage, VGE(off) -- V
VGE(off) -- Tc
Case Temperature, Tc -- °C
VCE(sat) -- Tc
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Voltage, VCE -- V
VCE -- VGE
Gate-to-Emitter Voltage, VGE -- V
Collector-to-Emitter Voltage, VCE -- V
VCE -- VGE
Gate-to-Emitter Voltage, VGE -- V
Collector-to-Emitter Voltage, VCE -- V
Cies, Coes, Cres -- pF
Cies, Coes, Cres -- VCE SW Time -- ICP
Switching Time, SW Time -- ns
Collector Current (Pulse), ICP -- A
IT14698
0
0
25
50
75
125
100
150
IT14699
0
0
12 5 769834 10
25
50
75
125
100
150
12 435
VGE=4.0V
3.0V
2.5V
VCE=10V
1.8V
IT14702
05075
100 125 15025--25--50
6
5
8
7
9
10
11
4
3
2
VGE=4V, I
C=150A
3
2
1
IT14700
1
10
9
8
7
6
4
5
23456
25°C
--25°C
IC=100A
Tc=75
°
C
25°C
75°C
Tc= --25°
C
4
3
1
2
IT14701
1
10
9
8
7
6
5
23456
IC=150A
IT14703
0 50 75 100 125 15025--25--50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
01618206841214102
10
100
7
7
5
3
2
1000
7
5
3
2
5
3
2
IT14704
Cies
Coes
Cres
f=1MHz
25°C
--25°
C
Tc=75°C
VGE=3V, I
C=100A
VCE=10V
IC=1mA
23 57 532
10010
IT14705
1000
5
3
2
7
5
3
2
7
100
tr
td(off)
td(on)
Test circuit Fig.1
V
GE=3V
V
CC=320V
R
G=250Ω
C
M=150μF
PW=50μs
tf
TIG062E8
No. A1480-4/5
SW Time -- RG
Switching Time, SW Time -- ns
dv / dt -- RG
Gate Series Resistance, RG -- Ω
Turn OFF, dv / dt -- V / μs
Gate Series Resistance, RG -- Ω
ICP -- VGE
Collector Current (Pulse), ICP -- A
2456310
0
20
40
60
80
100
120
140
160
Collector Current (Pulse)1, ICP1 -- A
Maximum Capacitor, CM -- μF
CM -- ICP1
20 40 60 80 100 120 1400 160
50
0
100
150
200
250
300
Tc=25°C
Tc=25°C
Tc=70°C
Tc=70°C
VCE=320V
CM=100μF
VGE=3V
VCE=320V
Gate-to-Emitter Voltage, VGE -- V
Collector Current (Pulse)2, ICP2 -- A
Maximum Capacitor, CM -- μF
CM -- ICP2
20 40 60 80 100 120 1400 160
50
0
100
150
200
250
300
Tc=25°C
Tc=70°C
VGE=3.3V
VCE=320V
Collector Current (Pulse)3, ICP3 -- A
Maximum Capacitor, CM -- μF
CM -- ICP3
20 40 60 80 100 120 1400 160
50
0
100
150
200
250
300
Tc=25°C
Tc=70°C
VGE=4V
VCE=320V
23 57 32
100 57
1000
IT14706
1000
7
7
5
3
5
2
2
3
100
5
3
2
tr
td(off)
td(on)
tf
Test circuit Fig.1
VGE=3V
VCC=320V
ICP=100A
CM=150μF
PW=50μs
IT14707
200 250 300 350 400 450 500100 150500
0
200
100
300
400
700
600
500
800 Test circuit Fig.1
VGE=3V
VCC=320V
ICP=100A
PW=50μs
IT14708
IT14710
IT14709
IT14711
TIG062E8
No. A1480-5/5
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of October, 2009. Specifi cations and information herein are subject
to change without notice.
Note : TIG062E8 has protection diode between gate and emitter but handling it requires suffi cient care
to be taken.
