DS 75 DSA 75 Rectifier Diode Avalanche Diode VRSM V(BR)miny VRRM DSI 75 DSAI 75 VRRM = 800-1800 V IF(RMS) = 160 A IF(AV)M = 110 A Anode Cathode on stud on stud V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700 1900 1300 1760 1950 1200 1600 1800 DSA 75-12B DSA 75-16B DSA 75-18B DSAI 75-12B DSAI 75-16B DSAI 75-18B DO-203 AB C A A DS DSA C DSI DSAI Only for Avalanche Diodes 1/4-28UNF A = Anode Symbol Test Conditions IF(RMS) IF(AV)M TVJ = TVJM Tcase = 100C; 180 sine PRSM DSA(I) types, TVJ = TVJM, tp = 10 ms IFSM TVJ = 45C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1400 1500 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1310 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9800 9450 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7820 7210 A2s A2s -40...+180 180 -40...+180 C C C I2t 160 110 A A 20 kW Features International standard package, JEDEC DO-203 AB (DO-5) Planar glassivated chips TVJ TVJM Tstg Md C = Cathode Maximum Ratings Mounting torque 2.4-4.5 21-40 21 Weight Nm lb.in. g Symbol Test Conditions IR TVJ = TVJM; VR = VRRM 6 VF IF 1.17 V VT0 rT For power-loss calculations only TVJ = TVJM 0.75 2 V mW RthJC RthJH DC current DC current 0.5 0.9 K/W K/W dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 4.05 3.9 100 mm mm m/s2 Applications High power rectifiers Field supply for DC motors Power supplies Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") Characteristic Values = 150 A; TVJ = 25C mA Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 744 1-2 (c) 2000 IXYS All rights reserved http://store.iiic.cc/ DS 75 DSA 75 200 105 1500 typ. A lim. A 50Hz, 80%VRRM 6 TVJ= 180C TVJ= 25C TVJ = 45C I2t TVJ = 45C 1000 VR = 0 V A2s IFSM IF 150 DSI 75 DSAI 75 TVJ = 180C 4 100 500 TVJ = 180C 2 50 0 0.0 0.5 1.0 VF 104 0 10-3 1.5 V Fig. 1 Forward characteristics 10-2 10-1 t s 100 1 2 3 4 5 6 7 ms 8 910 t Fig. 3 I2t versus time (1-10 ms) Fig. 2 Surge overload current IFSM: crest value, t: duration 200 200 A W RthJA : IF(AV)M 1 K/W 1.2 K/W 150 PF DC 180 sin 120 60 30 150 1.6 K/W 2 K/W 3 K/W 4 K/W 100 100 DC 180 sin 120 60 30 50 50 0 0 0 50 100 150 A 200 00 50 IF(AV)M 150 C 200 100 0 40 80 120 Tamb Fig. 4 Power dissipation versus forward current and ambient temperature 160 C 200 Tcase Fig. 5 Max. forward current at case temperature 1.5 K/W 30 60 120 180 DC ZthJH 1.0 RthJH for various conduction angles d: d RthJH (K/W) DC 180 120 60 30 0.900 1.028 1.085 1.272 1.476 0.5 Constants for ZthJH calculation: i 0.0 10-3 10-2 10-1 100 101 Fig. 6 Transient thermal impedance junction to heatsink 102 t s 103 1 2 3 4 Rthi (K/W) ti (s) 0.0731 0.1234 0.4035 0.3000 0.0015 0.0237 0.4838 1.5 2-2 (c) 2000 IXYS All rights reserved http://store.iiic.cc/