BZX84C4V7-G - SENSITRON SEMICONDUCTOR

July, 2009 − Rev. 6

1Publication Order Number:

BZX84C2V4ET1/D

BZX84C2V4ET1 Series

Zener Voltage Regulators

225 mW SOT−23 Surface Mount

This series of Zener diodes is offered in the convenient, surface

mount plastic SOT−23 package. These devices are designed to provide

voltage regulation with minimum space requirement. They are well

suited for applications such as cellular phones, hand held portables,

and high density PC boards.

Specification Features

•225 mW Rating on FR−4 or FR−5 Board

•Zener Breakdown Voltage Range − 2.4 V to 75 V

•Package Designed for Optimal Automated Board Assembly

•Small Package Size for High Density Applications

•ESD Rating of Class 3 (>16 kV) per Human Body Model

•Peak Power − 225 W (8 X 20 ms)

•Pb−Free Packages are Available

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

MAXIMUM RATINGS

Rating Symbol Max Unit

Peak Power Dissipation @ 20 ms (Note 1)

@ TL ≤ 25°C

Ppk 225 W

Total Power Dissipation on FR−5 Board,

(Note 2) @ TA = 25°C

Derated above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Total Power Dissipation on Alumina Sub-

strate, (Note 3) @ TA = 25°C

Derated above 25°C

300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature Range TJ, Tstg −65 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Nonrepetitive current pulse per Figure 9.

2. FR−5 = 1.0 X 0.75 X 0.62 in.

3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.

Device Package Shipping†

ORDERING INFORMATION

SOT−23

CASE 318

STYLE 8

Cathode

Anode

BZX84CxxxET1 SOT−23 3000/Tape & Reel

MARKING DIAGRAM

BZX84CxxxET3 SOT−23 10,000/Tape & Reel

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†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

See specific marking information in the device marking

column of the Electrical Characteristics table on page 3 of

this data sheet.

DEVICE MARKING INFORMATION

BZX84CxxxET1G SOT−23

(Pb−Free)

3000/Tape & Reel

xxx M G

BZX84CxxxET3G SOT−23

(Pb−Free)

10,000/Tape & Reel

xxx = Device Code

M = Date Code*

G= Pb−Free Package

*Date Code orientation may vary depending

upon manufacturing location.

(Note: Microdot may be in either location)

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ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C

unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)

Symbol Parameter

VZReverse Zener Voltage @ IZT

IZT Reverse Current

ZZT Maximum Zener Impedance @ IZT

IRReverse Leakage Current @ VR

VRReverse Voltage

IFForward Current

VFForward Voltage @ IF

QVZMaximum Temperature Coefficient of VZ

CMax. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator

IZT

BZX84C2V4ET1 Series

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ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)

Device*

Device

Marking

VZ1 (V)

ZT1 =5mA

(Note 4)

ZZT1

(W)

@ IZT1

5 mA

VZ2 (V)

ZT2 =1

(Note 4)

ZZT2

(W)

@ IZT2

1 mA

VZ3 (V)

ZT3=20 mA

(Note 4)

ZZT3

(W)

IZT3=

20 mA

Max

Reverse

Leakage

Current

qVZ

(mV/k)

@ IZT1=5 mA

C (pF)

VR = 0

f =

1 MHz

Min Nom Max Min Max Min Max

(V)

mA@Min Max

BZX84C2V4ET1, G BA1 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1.0 −3.5 0 450

BZX84C2V7ET1, G BA2 2.5 2.7 2.9 100 1.9 2.4 600 3.0 3.6 50 20 1.0 −3.5 0 450

BZX84C3V0ET1, G BA3 2.8 3.0 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1.0 −3.5 0 450

BZX84C3V3ET1, G BA4 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5.0 1.0 −3.5 0 450

BZX84C3V6ET1, G BA5 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5.0 1.0 −3.5 0 450

BZX84C3V9ET1, G BA6 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3.0 1.0 −3.5 −2.5 450

BZX84C4V3ET1, G BA7 4.0 4.3 4.6 90 3.3 4.0 600 4.4 5.1 30 3.0 1.0 −3.5 0 450

BZX84C4V7ET1, G BA9 4.4 4.7 5.0 80 3.7 4.7 500 4.5 5.4 15 3.0 2.0 −3.5 0.2 260

BZX84C5V1ET1, G BB1 4.8 5.1 5.4 60 4.2 5.3 480 5.0 5.9 15 2.0 2.0 −2.7 1.2 225

BZX84C5V6ET1, G BB2 5.2 5.6 6.0 40 4.8 6.0 400 5.2 6.3 10 1.0 2.0 −2 2.5 200

BZX84C6V2ET1, G BB3 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3.0 4.0 0.4 3.7 185

BZX84C6V8ET1, G BB4 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2.0 4.0 1.2 4.5 155

BZX84C7V5ET1, G BB5 7.0 7.5 7.9 15 6.9 7.9 80 7.0 8.0 6 1.0 5.0 2.5 5.3 140

BZX84C8V2ET1, G BB6 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5.0 3.2 6.2 135

BZX84C9V1ET1, G BB7 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6.0 3.8 7.0 130

BZX84C10ET1, G BB8 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7.0 4.5 8.0 130

BZX84C11ET1, G BB9 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8.0 5.4 9.0 130

BZX84C12ET1, G BC1 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8.0 6.0 10 130

BZX84C13ET1, G BC2 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8.0 7.0 11 120

BZX84C15ET1, G BC3 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13 110

BZX84C16ET1, G BC4 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14 105

BZX84C18ET1, G BC5 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16 100

BZX84C20ET1, G BC6 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18 85

BZX84C22ET1, G BC7 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20 85

BZX84C24ET1, G BC8 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22 80

Device

Marking

VZ1 Below

ZT1 =2mA

ZZT1

Below

@ IZT1

2 mA

VZ2 Below

ZT2 =

0.1 mA

ZZT2

Below

@ IZT4

0.5 mA

VZ3 Below

ZT3 =10mA

ZZT3

Below

@ IZT3

10 mA

Max

Reverse

Leakage

Current

qVZ

(mV/k)

Below

@ IZT1 = 2

C (pF)

@ VR

= 0

f =

1 MHz

Min Nom Max Min Max Min Max

(V)

mA@Min Max

BZX84C27ET1, G BC9 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70

BZX84C30ET1 BD1 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70

BZX84C33ET1, G BD2 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70

BZX84C36ET1, G BD3 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70

BZX84C39ET1, G BD4 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45

BZX84C43ET1, G BK6 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40

BZX84C47ET1, G BD5 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42 51.8 40

BZX84C51ET1, G BD6 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40

BZX84C56ET1, G BD7 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40

BZX84C62ET1, G BD8 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35

BZX84C68ET1, G BD9 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35

BZX84C75ET1, G BE1 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35

4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C

* The “G” suffix indicates Pb−Free package available.

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TYPICAL CHARACTERISTICS

VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ

VZ, NOMINAL ZENER VOLTAGE (V)

−3

−2

−1

12111098765432

Figure 1. Temperature Coefficients

(Temperature Range −55°C to +150°C)

TYPICAL TC VALUES

VZ @ IZT

VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ

100

110 100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 2. Temperature Coefficients

(Temperature Range −55°C to +150°C)

VZ @ IZT

100

VZ, NOMINAL ZENER VOLTAGE

Figure 3. Effect of Zener Voltage on

Zener Impedance

101

ZZT, DYNAMIC IMPEDANCE ( )Ω

1000

100

TJ = 255C

IZ(AC) = 0.1 IZ(DC)

f = 1 kHz

IZ = 1 mA

5 mA

20 mA

, FORWARD VOLTAGE (V)

Figure 4. Typical Forward Voltage

1.21.11.00.90.80.70.60.50.4

IF, FORWARD CURRENT (mA)

1000

100

75 V (MMBZ5267BLT1)

91 V (MMBZ5270BLT1)

150°C75°C 25°C 0°C

TYPICAL TC VALUES

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TYPICAL CHARACTERISTICS

C, CAPACITANCE (pF)

100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 5. Typical Capacitance

1000

100

1101

BIAS AT

50% OF VZ NOM

0 V BIAS

1 V BIAS

VZ, ZENER VOLTAGE (V)

100

0.1

0.01 1086420

TA = 25°C

IZ, ZENER CURRENT (mA)

VZ, ZENER VOLTAGE (V)

100

0.1

0.0110 30 50 70 90

IR, LEAKAGE CURRENT ( A)μ

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 6. Typical Leakage Current

1000

100

0.1

0.01

0.001

0.0001

0.00001 80706050403020100

+150°C

+25°C

−55°C

IZ, ZENER CURRENT (mA)

Figure 7. Zener Voltage versus Zener Current

(VZ Up to 12 V)

Figure 8. Zener Voltage versus Zener Current

(12 V to 91 V)

100

Figure 9. 8 × 20 ms Pulse Waveform

0020406080

t, TIME (ms)

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

HALF VALUE IRSM/2 @ 20 ms

% OF PEAK PULSE CURRENT

PEAK VALUE IRSM @ 8 ms

TA = 25°C

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

BZX84C2V4ET1/D

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