NSBA115TF3T5G - ON Semiconductor - Datasheet.Directory

September, 2008 − Rev. 2

1Publication Order Number:

NSBA114EF3/D

NSBA114EF3T5G Series

Preferred Devices

Digital Transistors (BRT)

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The digital transistor

contains a single transistor with a monolithic bias network consisting

of two resistors; a series base resistor and a base−emitter resistor. The

digital transistor eliminates these individual components by

integrating them into a single device. The use of a digital transistor can

reduce both system cost and board space. The device is housed in the

SOT−1123 package which is designed for low power surface mount

applications.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•The SOT−1123 Package can be Soldered using Wave or Reflow.

•Available in 4 mm, 8000 Unit Tape & Reel

•These are Pb−Free Devices

•These are Halide−Free Devices

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector-Base Voltage VCBO 50 Vdc

Collector-Emitter Voltage VCEO 50 Vdc

Collector Current IC100 mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

PNP SILICON DIGITAL

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

PIN 1

BASE

(INPUT)

http://onsemi.com

MARKING DIAGRAM

SOT−1123

CASE 524AA

STYLE 1

x = Device Code

M = Date Code

G or G= Pb−Free Package

x M

ORDERING INFORMATION

Device Package Shipping†

NSBA114EFT5G SOT−1123

(Pb−Free)

8000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

NSBA114EF3T5G Series

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

TA = 25°C (Note 1)

Derate above 25°C

PD254

2.0

mW/°C

Thermal Resistance (Note 1)

Junction-to-Ambient

RqJA 493 °C/W

Total Device Dissipation

TA = 25°C (Note 2)

Derate above 25°C

PD297

2.4

mW/°C

Thermal Resistance (Note 2) Junction-to-Ambient RqJA 421 °C/W

Thermal Resistance (Note 1) Junction-to-Lead 3 RqJL 193 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

1. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

2. FR−4 @ 500 mm2, 1 oz. copper traces, still air.

ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES

Device Marking* R1 (k) R2 (k) Package Shipping†

NSBA114EF3T5G F (0°) 10 10

SOT−1123

(Pb−Free) 8000 / Tape & Reel

NSBA124EF3T5G Y (0°) 22 22

NSBA144EF3T5G E (0°) 47 47

NSBA114YF3T5TG K (0°) 10 47

NSBA123TF3T5G F (90°) 2.2 ∞

NSBA143EF3T5G A (90°) 4.7 4.7

NSBA143ZF3T5G E (90°) 4.7 47

NSBA123JF3T5G J (90°) 2.2 47

NSBA144WF3T5G D (90°) 47 22

NSBA114TF3T5G L (90°) 10 ∞

NSBA115TF3T5G Q (90°) 100 ∞

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification Brochure, BRD8011/D.

*(XX°) = Degree rotation in the clockwise direction.

NSBA114EF3T5G Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc

Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc

Emitter−Base Cutoff Current NSBA114EF3T5G

(VEB = 6.0 V, IC = 0) NSBA124EF3T5G

NSBA144EF3T5G

NSBA114YF3T5TG

NSBA123TF3T5G

NSBA114TF3T5G

NSBA143EF3T5G

NSBA115T53T5G

NSBA143ZF3T5G

NSBA123JF3T5G

NSBA144WF3T5G

IEBO −

−

0.5

0.2

0.1

0.2

4.0

0.9

1.5

0.1

0.18

0.2

0.13

mAdc

Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 2.0 mA, IB = 0)

V(BR)CEO 50 − − Vdc

ON CHARACTERISTICS (Note 3)

DC Current Gain NSBA114EF3T5G

(VCE = 10 V, IC = 5.0 mA) NSBA124EF3T5G

NSBA144EF3T5G

NSBA114YF3T5TG

NSBA115TF3T5G/NSBA123TF3T5G

NSBA143EF3T5G

NSBA143ZF3T5G

NSBA123JF3T5G

NSBA144WF3T5G

NSBA114TF3T5G

hFE 35

160

100

140

350

140

250

−

Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)

NSBA114EF3T5G/NSBA124EF3T5G/NSBA144EF3T5G

NSBA114YF3T5G/NSBA123TF3T5G/NSBA123JF3T5G

NSBA144WF3T5G

(IC = 10 mA, IB = 1 mA)

NSBA143ZF3T5G/NSBA143EF3T5G/NSBA114TF3T5G

(IC = 10 mA, IB = 5 mA)

NSBA115TF3T5G

VCE(sat) − − 0.25 Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) NSBA114TF3T5G

NSBA114EF3T5G

NSBA124EF3T5G

NSBA114YF3T5G

NSBA123TF3T5G

NSBA143EF3T5G

NSBA143ZF3T5G

NSBA123JF3T5G

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) NSBA144EF3T5G

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) NSBA144WF3T5G

(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) NSBA115TF3T5G

VOL

−

0.2

Vdc

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

NSBA114EF3T5G/NSBA124EF3T5G/NSBA144EF3T5G

NSBA114YEF3T5G/NSBA143ZF3T5G/NSBA123JF3TG

NSBA144WF3T5G

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)

NSBA123TF3T5G/NSBA143EF3T5G/NSBA114TF3T5G/

NSBA115TF3T5G

VOH 4.9 − − Vdc

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

NSBA114EF3T5G Series

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

Input Resistor NSBA114TF3T5C

NSBA114EF3T5G

NSBA124EF3T5G

NSBA144EF3T5G

NSBA114YF3T5TG

NSBA123TF3T5G

NSBA143EF3T5G

NSBA143ZF3T5G

NSBA123JF3T5G

NSBA144WF3T5G

NSBA115TF3T5G

R1 7.0

7.0

15.4

32.9

7.0

1.5

3.3

1.54

32.9

2.2

4.7

2.2

100

28.6

61.1

2.9

6.1

2.86

61.1

130

Resistor Ratio

NSBA114EF3T5G/NSBA124EF3T5G/

NSBA144EF3T5G/NSBA143EF3T5G

NSBA114YF3T5TG

NSBA123TF3T5G/NSBA114TF3T5G/

NSBA115TF3T5G

NSBA143ZF3T5G

NSBA123JF3T5G

NSBA144WF3T5G

R1/R2

0.8

0.17

−

0.055

0.038

1.7

1.0

0.21

−

0.1

0.047

2.1

1.2

0.25

−

0.185

0.056

2.6

NSBA114EF3T5G Series

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TYPICAL ELECTRICAL CHARACTERISTICS − NSBA114EF3T5G

0.01

0.10

1.0

0 5 10 15 20 25 30 35 40 45 50

Figure 1. VCE(sat) vs. IC

IC, COLLECTOR CURRENT (mA)

VCE(SAT), COLLECTOR−TO−EMITTER SATURATION

VOLTAGE (V)

TA=25°C

TA= 150°C

TA=−55°C

IC/IB = 10

1.0

100

1000

0.1 1 10 100

VCE = 10 V

150°C

25°C

−55°C

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 5 10 15 20 25 30 35 40 45 50

Figure 3. Output Capacitance

REVERSE BIAS VOLTAGE (V)

COBO, OUTPUT CAPACITANCE (pF)

0.01

0.1

1.0

100

012345

150°C

25°C

−55°C

IC, COLLECTOR CURRENT (mA)

Figure 4. Output Current vs. Input Voltage

Vin, INPUT VOLTAGE (V)

0.1

1.0

0 5 10 15 20 25 30 35 40 45 50

Figure 5. Input Voltage vs. Output Current

IC, COLLECTOR CURRENT (mA)

Vin, INPUT VOLTAGE (V)

25°C

−55°C

150°C

NSBA114EF3T5G Series

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PACKAGE DIMENSIONS

SOT−1123

CASE 524AA−01

ISSUE B

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

DIM MIN NOM MAX

MILLIMETERS

A0.34 0.37 0.40

b0.15 0.22 0.28

c0.07 0.12 0.17

D0.75 0.80 0.85

E0.55 0.60 0.65

0.95 1.00 1.05

L0.05 0.10 0.15

0.013 0.015 0.016

0.006 0.009 0.011

0.003 0.005 0.007

0.030 0.031 0.033

0.022 0.024 0.026

0.037 0.039 0.041

0.002 0.004 0.006

MIN NOM MAX

INCHES

−Y−

−X−

0.08 (0.0032) XY

0.40

0.30

0.90

DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

e−−− −−−−

b1 0.10 0.15 0.20 0.004 0.006 0.008

0.35

0.25

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

0.35 0.40 0.014 0.016

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent

rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.

Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,

affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury

or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an

Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

NSBA114EF3/D

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For additional information, please contact your local

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