1
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3MOTOROLA RF DEVICE DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications at frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for P CN–PC S /c e ll ula r ra dio a nd W LL
applications.
•Typical 2–carrier W–CDMA Performance for VDD = 28 Volts,
IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power — 28 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 — –37 dBc
ACPR — –39 dBc
•Internally Matched, Controlled Q, for Ease of Use
•High Gain, High Efficiency and High Linearity
•Integrated ESD Protection
•Designed for Maximum Gain and Insertion Phase Flatness
•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
Output Power
•Excellent Thermal Stability
•Characterized with Series Equivalent Large–Signal Impedance Parameters
•Qualified Up to a Maximum of 32 VDD Operation
•Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 65 Vdc
Gate–Source Voltage VGS –0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD315
2
Watts
W/°C
Storage Temperature Range Tstg –65 to +150 °C
Operating Junction Temperature TJ200 °C
CW Operation CW 92 Watts
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 92 W CW
Case Temperature 80°C, 28 W CW
RθJC
0.54
0.56
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF5S21130/D
SEMICONDUCTOR TECHNICAL DATA
2170 MHz, 28 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465C–02, STYLE 1
NI–880S
MRF5S21130S
CASE 465B–03, STYLE 1
NI–880
MRF5S21130
Motorola, Inc. 2002
REV 1
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
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MOTOROLA RF DEVICE DATA
ESD PROTECTION CHARACTERISTICS
Test Conditions Class
Human Body Model 2 (Minimum)
Machine Model M4 (Minimum)
Charge Device Model C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th) 2.5 2.7 3.5 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc)
VGS(Q) — 3.7 — Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on) — 0.26 0.3 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs — 7.5 — S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 2.6 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps 12 13.5 — dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η24 26 — %
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 –10 MHz and f2 +10 MHz
referenced to carrier channel power.)
IM3 –37 –35 dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 –5 MHz and f2 +5 MHz.)
ACPR — –39 –37 dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL — –12 –9 dB
(1) Part is internally matched both on input and output.
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MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3MOTOROLA RF DEVICE DATA
Figure 1. MRF5S21130 Test Circuit Schematic
Z9, Z10 0.709″ x 0.083″ Microstrip
Z11 0.415″ x 1.000″ Microstrip
Z12 0.531″ x 0.083″ Microstrip
Z13 0.994″ x 0.083″ Microstrip
Z14, Z15 0.070″ x 0.220″ Microstrip
Z16 0.430″ x 0.083″ Microstrip
PCB Taconic TLX8, 0.030″, εr = 2.55
Z1 0.500″ x 0.083″ Microstrip
Z2 0.995″ x 0.083″ Microstrip
Z3 0.905″ x 0.083″ Microstrip
Z4 0.159″ x 1.024″ Microstrip
Z5 0.117″ x 1.024″ Microstrip
Z6, Z7 0.749″ x 0.083″ Microstrip
Z8 0.117″ x 1.000″ Microstrip
Table 1. MRF5S21130 Test Circuit Component Designations and Values
Part Description Value, P/N or DWG Manufacturer
C1, C2, C13, C14, C15, C16 10 µF, 35 V Tantalum Capacitors 293D1106X9035D Vishay–Sprague
C3, C4, C11, C12 220 nF Chip Capacitors (1812) 1812Y224KXA Vishay–Vitramon
C5, C6, C7, C9, C10, C18, C19 6.8 pF 100B Chip Capacitors 100B6R8CW ATC
C8 0.1 pF 100B Chip Capacitor 100B0R1BW ATC
C17 0.5 pF 100B Chip Capacitor 100B0R5BW ATC
C20 220 µF, 63 V Electrolytic Capacitor, Radial 13668221 Philips
R1, R2 1 kW, 1/4 W Chip Resistors
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
4
MOTOROLA RF DEVICE DATA
Figure 2. MRF5S21130 Test Circuit Component Layout
MRF5S21130
CUT OUT AREA
Rev 0
5
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
η
Figure 3. 2–Carrier W–CDMA Broadband Performance
η
Figure 4. Two–Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
µ
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
η
Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
η
Figure 9. 2-Carrier W-CDMA Spectrum
Figure 10. CCDF W–CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
°
Figure 11. MTBF Factor versus Junction Temperature
±
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MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3MOTOROLA RF DEVICE DATA
Figure 12. Series Equivalent Input and Output Impedance
f
MHz
Zsource
Ω
Zload
Ω
2080
2110
2140
1.51 – j2.97
1.59 – j2.68
1.52 – j2.54
2.87 – j9.49
3.13 – j9.86
4.05 – j10.90
Ω
2170
2200 1.54 – j3.13
1.62 – j2.704.80 – j11.75
5.55 – j11.87
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
8
MOTOROLA RF DEVICE DATA
NOTES
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MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3MOTOROLA RF DEVICE DATA
NOTES
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
10
MOTOROLA RF DEVICE DATA
NOTES
11
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 465B–03
ISSUE B
NI–880
MRF5S21130
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A
B
C
D
E
F
G
H
K
N
Q
R
1
3
2
D
G
K
C
E
H
F
Q
2X
B
B
(FLANGE)
SEATING
PLANE
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
S
(INSULATOR)
R
(LID)
S
M
aaa
bbb
ccc
CASE 465C–02
ISSUE A
NI–880S
MRF5S21130S
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A
B
C
D
E
F
H
K
N
R
1
SEATING
PLANE
2
D
K
C
E
H
F
B
B
(FLANGE)
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
R(LID)
S(INSULATOR)
S
M
bbb
ccc
aaa
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
12
MOTOROLA RF DEVICE DATA
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola
products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and
distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal
injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture
of the part. Motorola and the Stylized M Logo are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners.
E Motorola, Inc. 2002.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
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Technical Information Center: 1–800–521–6274
HOME PAGE: http://www.motorola.com/semiconductors
MRF5S21130/D
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