Order this document by MRF5S21130/D SEMICONDUCTOR TECHNICAL DATA N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 28 Watts Avg. Power Gain -- 13.5 dB Efficiency -- 26% IM3 -- -37 dBc ACPR -- -39 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Qualified Up to a Maximum of 32 VDD Operation * Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 28 W AVG., 2 x W-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465B-03, STYLE 1 NI-880 MRF5S21130 CASE 465C-02, STYLE 1 NI-880S MRF5S21130S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 315 2 Watts W/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temperature TJ 200 C CW 92 Watts Symbol Max Unit CW Operation THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 92 W CW Case Temperature 80C, 28 W CW C/W RJC 0.54 0.56 NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 2002 MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 1 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M4 (Minimum) Charge Device Model C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2.5 2.7 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) -- 0.26 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 7.5 -- S Crss -- 2.6 -- pF Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12 13.5 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 24 26 -- % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) IM3 -37 -35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 -5 MHz and f2 +5 MHz.) ACPR -- -39 -37 dBc Input Return Loss (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL -- -12 -9 dB (1) Part is internally matched both on input and output. MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 2 MOTOROLA RF DEVICE DATA Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 0.500 x 0.083 Microstrip 0.995 x 0.083 Microstrip 0.905 x 0.083 Microstrip 0.159 x 1.024 Microstrip 0.117 x 1.024 Microstrip 0.749 x 0.083 Microstrip 0.117 x 1.000 Microstrip Z9, Z10 Z11 Z12 Z13 Z14, Z15 Z16 PCB 0.709 x 0.083 Microstrip 0.415 x 1.000 Microstrip 0.531 x 0.083 Microstrip 0.994 x 0.083 Microstrip 0.070 x 0.220 Microstrip 0.430 x 0.083 Microstrip Taconic TLX8, 0.030, r = 2.55 Figure 1. MRF5S21130 Test Circuit Schematic Table 1. MRF5S21130 Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1, C2, C13, C14, C15, C16 10 F, 35 V Tantalum Capacitors 293D1106X9035D Vishay-Sprague C3, C4, C11, C12 220 nF Chip Capacitors (1812) 1812Y224KXA Vishay-Vitramon C5, C6, C7, C9, C10, C18, C19 6.8 pF 100B Chip Capacitors 100B6R8CW ATC C8 0.1 pF 100B Chip Capacitor 100B0R1BW ATC C17 0.5 pF 100B Chip Capacitor 100B0R5BW ATC C20 220 F, 63 V Electrolytic Capacitor, Radial 13668221 Philips R1, R2 1 kW, 1/4 W Chip Resistors MOTOROLA RF DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 3 CUT OUT AREA MRF5S21130 Rev 0 Figure 2. MRF5S21130 Test Circuit Component Layout MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 5 /1% 67 5 2 *"89:-% ( 5 ;" 3<<=< 23#"% #+, <<=< 41>9% : #+, ?>>= 0>/@/7?% =AB"89: 5 : /0 C :D <67 * - 3 3 # 3 " 3 3 3 3 3 3 3 % .' . 44.*/0- #.*/01-% " .*/01- ! %.. 2'.!" .*/0- %." ' ' ).*D- ! $% '(' ) *#+,- Figure 3. 2-Carrier W-CDMA Broadband Performance 3 : ;" ;" : ;" ! %.. 2'.!" .*/0- #%.+.' '# " .4 .*/01- ( 5 ;" ;" : 5 /1 $ 5 #+,% $ 5 #+, @636>= #=<=;=>7% #+, 6>= 41>9 : 3 3 ( 5 ;" 3 ;" ;" 3 3 ;" 3 ;" 3 3 Figure 4. Two-Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power 3 </ </=< 3 67 %. . 2'.*/0;- #% '# " .4 .*/01- 67% 2' *2"4- ' 67% 2' *2"4- ' 3 3 7? </=< 3 7? </=< 3 3 3 5 /1 $ 5 #+,% $ 5 #+, @636>= #=<=;=>7% #+, 6>= 41>9 5 /1% 67 5 2 * ' -% ( 5 ;" @636>= #=<=;=>7% =>7=< <=E=>1 5 #+, : /= /0 5 : /0; *: 2- /0 5 : /0; * 2- "17 5 /1% ( 5 ;" =/ 2% =1*6>-% ;=1*6$$=>7=< <=E=>1 5 #+, 23 ' 4 " ! *#+,- >% 2' */0;- Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 5 5 /1% ( 5 ;"% $ 5 #+,% $ 5 #+,% G 23#"% #+, C : #+, 0>/@/7?% =AB"89: 5 : /0 C :D <67 * - 3 # 3 ! 3 3 3 3 3 3 3 3 3 3" C " C : #+, 02 : #+, 02 3# C : #+, 02 3 3 3 3 3 : #+, ?>>= 02 3 3 " 3 3 */0- #.*/01-% " .*/01- %." .' ' ).*D-%. ! %. 2'.!" .*/0- TYPICAL CHARACTERISTICS 3 3 Figure 9. 2-Carrier W-CDMA Spectrum Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power #0 . ".*+4.G."# 4...- 0"0 ).*D- 3 $% '(' ) *#+,- 67% 2' *2"4- "!: *23#"- : : : : 3 # C : #+, 02 '"F33"'"!' */0- Figure 10. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal H% H '# '"' *? 68= 9<? / 117=/ #0 > ?6< G ;=<= /<> 1<<=>7: $= 7=7 7 ==87=/ 7=;=<7<= ?8= 16<<=7=/ 76 =77=< 7?> D 6$ 7?= 7?=6<=71 <=/176> $6< ;=7 $<=: 8/= #0 $176< $6< #0 > <71< 176>: Figure 11. MTBF Factor versus Junction Temperature MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 6 MOTOROLA RF DEVICE DATA $ 5 #+, $ 5 #+, 6/I 6 5 $ 5 #+, $ 5 #+, 6<1= 5 /1% ( 5 ;"% 67 5 2 "89: f MHz Zsource Zload 2080 2.87 - j9.49 1.51 - j2.97 2110 3.13 - j9.86 1.52 - j2.54 2140 4.05 - j10.90 1.59 - j2.68 2170 4.80 - j11.75 1.62 - j2.70 2200 5.55 - j11.87 1.54 - j3.13 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. 77 #71?>9 =7@6<A =81= >/=< =7 >7 #71?>9 =7@6<A Z source Z load Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 7 NOTES MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 9 NOTES MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS B G 2X 1 Q # " 0 # '4J : #' 4 ! " '" ! ' " 4 ):#3: : ! #' 4 J +: : #' 4 + 4 #'"4' : *:- "2") # "F"!' 0): : ' '' # B (FLANGE) 3 K 2 # D " 0 # M (INSULATOR) # # " # 0 # 111 # " # 0 # N R 111 # " # 0 S (LID) # " # 0 (LID) # (INSULATOR) # H C E T A SEATING PLANE B '4J : #' 4 ! " '" ! ' " 4 ):#3: : ! #' 4 J +: : #' 4 + 4 #'"4' : *:- "2") # "F"!' 0): 1 B (FLANGE) 2 # # D " " # # 0 # M (INSULATOR) 0 # " # 0 R 111 # N 111 MILLIMETERS MIN MAX : : : : : : : : : : : : :.04 : : : : : : : : : : : : : : :.' :.' :.' CASE 465B-03 ISSUE B NI-880 MRF5S21130 (FLANGE) K INCHES MIN MAX : : : : : : : : : : : : :.04 : : : : : : : : : : : : : : :.' :.' :.' 4) ' J : " : !"' : 4' F A DIM A B C D E F G H K M N Q R S aaa bbb ccc # " # S (LID) # 0 # " # 0 (LID) # (INSULATOR) # DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX : : : : : : : : : : : : : : : : : : : : : : : : :.' :.' :.' MILLIMETERS MIN MAX : : : : : : : : : : : : : : : : : : : : : : : : :.' :.' :.' 4) ' J : " : !"' : 4' H C F E T A A (FLANGE) MOTOROLA RF DEVICE DATA SEATING PLANE CASE 465C-02 ISSUE A NI-880S MRF5S21130S MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. 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Motorola and the Stylized M Logo are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 12 MOTOROLA RF DEVICE DATA MRF5S21130/D