FZT758
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
T
amb
=25°C
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Normalised Gain
V- (Volts)
V- (Volts)
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
I
C
/I
B
=10
V
CE
=10V
300
200
100
h- Typical Gain
0.001 0.001
0.001 0.001
I
C
/I
B
=20
-55°C
+25°C
+100°C
+175°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
V
CE
=10V
0.001
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10V 100V
1s
DC
100ms
10ms
100
µ
s
1ms
1V
0.01
1000V
0.001
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT658
PARTMARKING DETAIL FZT758
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -400 V
Collector-Emitter Voltage VCEO -400 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -1 A
Continuous Collector Current IC-500 mA
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -400 V IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -400 V IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO -5 V IE=-100µA
Collector Cut-Off Current ICBO -100 nA VCB
=-320V
Collector Cut-Off Current ICES -100 nA VCE
=-320V
Emitter Cut-Off Current IEBO -100 nA VEB
=-4V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.30
-0.25
-0.50
V
V
V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-100mA, IB=-10mA*
Base-Emitter Saturation
Voltage
VBE(sat) -0.9 V IC=-100mA, IB=-10mA*
Base-Emitter Turn On Voltage VBE(on) -1.0 V IC=-100mA, VCE
=-5V*
Static Forward Current
Transfer Ratio
hFE 50
50
40
IC=-1mA, VCE
=-5V
IC=-100mA, VCE
=-5V*
IC=-200mA, VCE
=-10V*
Transition Frequency fT50 MHz IC=-20mA, VCE
=-20V
f=20MHz
Output Capacitance Cobo 20 pF VCB
=-20V, f=1MHz
Switching times ton
toff
140 Typical
2000 Typical
ns
ns
IC=-100mA, VCC
=-100V
IB1=10mA, IB2=-20mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT758
C
C
E
B
3 - 2423 - 243
FZT758
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
T
amb
=25°C
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Normalised Gain
V- (Volts)
V- (Volts)
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
I
C
/I
B
=10
V
CE
=10V
300
200
100
h- Typical Gain
0.001 0.001
0.001 0.001
I
C
/I
B
=20
-55°C
+25°C
+100°C
+175°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
+175°C
V
CE
=10V
0.001
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10V 100V
1s
DC
100ms
10ms
100
µ
s
1ms
1V
0.01
1000V
0.001
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT658
PARTMARKING DETAIL FZT758
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -400 V
Collector-Emitter Voltage VCEO -400 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -1 A
Continuous Collector Current IC-500 mA
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -400 V IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -400 V IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO -5 V IE=-100µA
Collector Cut-Off Current ICBO -100 nA VCB
=-320V
Collector Cut-Off Current ICES -100 nA VCE
=-320V
Emitter Cut-Off Current IEBO -100 nA VEB
=-4V
Collector-Emitter
Saturation Voltage
VCE(sat) -0.30
-0.25
-0.50
V
V
V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-100mA, IB=-10mA*
Base-Emitter Saturation
Voltage
VBE(sat) -0.9 V IC=-100mA, IB=-10mA*
Base-Emitter Turn On Voltage VBE(on) -1.0 V IC=-100mA, VCE
=-5V*
Static Forward Current
Transfer Ratio
hFE 50
50
40
IC=-1mA, VCE
=-5V
IC=-100mA, VCE
=-5V*
IC=-200mA, VCE
=-10V*
Transition Frequency fT50 MHz IC=-20mA, VCE
=-20V
f=20MHz
Output Capacitance Cobo 20 pF VCB
=-20V, f=1MHz
Switching times ton
toff
140 Typical
2000 Typical
ns
ns
IC=-100mA, VCC
=-100V
IB1=10mA, IB2=-20mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT758
C
C
E
B
3 - 2423 - 243
