EL5420CL - Elantec Semiconductor - Datasheet.Directory

Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these

specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.

EL5220C, EL5420C

General Description

The EL5420C and EL5220C are low power, high voltage, rail-to-rail

input-output amplifiers. The EL5220C contains two amplifiers in one

package, and the EL5420C contains four amplifiers. Operating on sup-

plies ranging from 5V to 15V, while consuming only 500µA per

amplifier, the EL5420C and EL5220C have a bandwidth of 12MHz --

(-3dB). They also provide common mode input ability beyond the sup-

ply rails, as well as rail-to-rail output capability. This enables these

amplifiers to offer maximum dynamic range at any supply voltage.

The EL5420C and EL5220C also feature fast slewing and settling

times, as well as a high output drive capability of 30mA (sink and

source). These features make these amplifiers ideal for use as voltage

reference buffers in Thin Film Transistor Liquid Crystal Displays

(TFT-LCD). Other applications include battery power, portable

devices, and anywhere low power consumption is important.

The EL5420C is available in a space-saving 14-pin TSSOP package,

the industry-standard 14-pin SO package, as well as a 16-pin LPP

package. The EL5220C is available in the 8-pin MSOP package. Both

feature a standard operational amplifier pin out. These amplifiers are

specified for operation over the full -40°C to +85°C temperature

range.

Connection Diagrams

VS-

VS+

VINA+

VINA-

VOUTA

VOUTB

VINB-

VINB+

EL5220C

(8-Pin MSOP)

Connection Diagrams are continued on page 4

EL5420C

(14-Pin TSSOP & 14-Pin SO)

VS-VS+

VINB+

VINB-

VOUTB

VINA+

VINA-

VOUTA

VINC+

VINC-

VOUTC

VIND+

VIND-

VOUTD

Features

•12MHz -3dB bandwidth

•Supply voltage = 4.5V to 16.5V

•Low supply current (per amplifier)

= 500µA

•High slew rate = 10V/µs

•Unity-gain stable

•Beyond the rails input capability

•Rail-to-rail output swing

•Ultra-small package

Applications

•TFT-LCD drive circuits

•Electronics notebooks

•Electronics games

•Touch-screen displays

•Personal communication devices

•Personal digital assistants (PDA)

•Portable instrumentation

•Sampling ADC amplifiers

•Wireless LANs

•Office automation

•Active filters

•ADC/DAC buffer

Ordering Information

Part No. Package

Tape &

Reel Outline #

EL5220CY 8-Pin MSOP -MDP0043

EL5220CY-T7 8-Pin MSOP 7” MDP0043

EL5220CY-T13 8-Pin MSOP 13” MDP0043

EL5420CL 16-Pin LPP -MDP0046

EL5420CL-T7 16-Pin LPP 7” MDP0046

EL5420CL-T13 16-Pin LPP 13” MDP0046

EL5420CR 14-Pin TSSOP -MDP0044

EL5420CR-T7 14-Pin TSSOP 7” MDP0044

EL5420CR-T13 14-Pin TSSOP 13” MDP0044

EL5420CS 14-Pin SO -MDP0027

EL5420CS-T7 14-Pin SO 7” MDP0027

EL5420CS-T13 14-Pin SO 13” MDP0027

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

September 19, 2001

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

EL5220C, EL5420C

Absolute Maximum Ratings (TA = 25°C)

Values beyond absolute maximum ratings can cause the device to be pre-

maturely damaged. Absolute maximum ratings are stress ratings only

and functional device operation is not implied

Supply Voltage between VS+ and VS-+18V

Input Voltage VS- - 0.5V, VS +0.5V

Maximum Continuous Output Current 30mA

Maximum Die Temperature +125°C

Storage Temperature -65°C to +150°C

Operating Temperature -40°C to +85°C

Power Dissipation See Curves

ESD Voltage 2kV

Important Note:

All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the

specified temperature and are pulsed tests, therefore: TJ = TC = TA

Electrical Characteristics

VS+= +5V, VS - = -5V, RL = 10kΩ and CL = 10pF to 0V, TA = 25°C unless otherwise specified.

Parameter Description Condition Min Typ Max Unit

Input Characteristics

VOS Input Offset Voltage VCM = 0V 2 12 mV

TCVOS Average Offset Voltage Drift [1] 5µV/°C

IBInput Bias Current VCM = 0V 2 50 nA

RIN Input Impedance 1GΩ

CIN Input Capacitance 1.35 pF

CMIR Common-Mode Input Range -5.5 +5.5 V

CMRR Common-Mode Rejection Ratio for VIN from -5.5V to +5.5V 50 70 dB

AVOL Open-Loop Gain -4.5V ≤ VOUT ≤ +4.5V 75 95 dB

Output Characteristics

VOL Output Swing Low IL = -5mA -4.92 -4.85 V

VOH Output Swing High IL = 5mA 4.85 4.92 V

ISC Short Circuit Current ±120 mA

IOUT Output Current ±30 mA

Power Supply Performance

PSRR Power Supply Rejection Ratio VS is moved from ±2.25V to ±7.75V 60 80 dB

ISSupply Current (Per Amplifier) No load 500 750 µA

Dynamic Performance

SR Slew Rate [2] -4.0V ≤ VOUT ≤ +4.0V, 20% to 80% 10 V/µs

tSSettling to +0.1% (AV = +1) (AV = +1), VO = 2V step 500 ns

BW -3dB Bandwidth RL = 10kΩ, CL = 10pF 12 MHz

GBWP Gain-Bandwidth Product RL = 10kΩ, CL = 10pF 8MHz

PM Phase Margin RL = 10kΩ, CL = 10 pF 50 °

CS Channel Separation f = 5MHz 75 dB

1. Measured over operating temperature range

2. Slew rate is measured on rising and falling edges

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

EL5220C, EL5420C

Electrical Characteristics

VS+ = 5V, VS-= 0V, RL = 10kΩ and CL = 10pF to 2.5V, TA = 25°C unless otherwise specified.

Parameter Description Condition Min Typ Max Unit

Input Characteristics

VOS Input Offset Voltage VCM = 2.5V 2 10 mV

TCVOS Average Offset Voltage Drift [1] 5µV/°C

IBInput Bias Current VCM = 2.5V 2 50 nA

RIN Input Impedance 1GΩ

CIN Input Capacitance 1.35 pF

CMIR Common-Mode Input Range -0.5 +5.5 V

CMRR Common-Mode Rejection Ratio for VIN from -0.5V to +5.5V 45 66 dB

AVOL Open-Loop Gain 0.5V ≤ VOUT ≤+ 4.5V 75 95 dB

Output Characteristics

VOL Output Swing Low IL = -5mA 80 150 mV

VOH Output Swing High IL = +5mA 4.85 4.92 V

ISC Short Circuit Current ±120 mA

IOUT Output Current ±30 mA

Power Supply Performance

PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V 60 80 dB

ISSupply Current (Per Amplifier) No load 500 750 µA

Dynamic Performance

SR Slew Rate [2] 1V ≤ VOUT ≤ 4V, 20% to 80% 10 V/µs

tSSettling to +0.1% (AV = +1) (AV = +1), VO = 2V step 500 ns

BW -3dB Bandwidth RL = 10kΩ, CL = 10pF 12 MHz

GBWP Gain-Bandwidth Product RL = 10 kΩ, CL = 10pF 8MHz

PM Phase Margin RL = 10 kΩ, CL = 10 pF 50 °

CS Channel Separation f = 5MHz 75 dB

1. Measured over operating temperature range

2. Slew rate is measured on rising and falling edges

Electrical Characteristics

VS+ = 15V, VS- = 0V, RL = 10kΩ and CL = 10pF to 7.5V, TA = 25°C unless otherwise specified.

Parameter Description Condition Min Typ Max Unit

Input Characteristics

VOS Input Offset Voltage VCM = 7.5V 2 14 mV

TCVOS Average Offset Voltage Drift [1] 5µV/°C

IBInput Bias Current VCM = 7.5V 2 50 nA

RIN Input Impedance 1GΩ

CIN Input Capacitance 1.35 pF

CMIR Common-Mode Input Range -0.5 +15.5 V

CMRR Common-Mode Rejection Ratio for VIN from -0.5V to +15.5V 53 72 dB

AVOL Open-Loop Gain 0.5V ≤ VOUT ≤ 14.5V 75 95 dB

Output Characteristics

VOL Output Swing Low IL = -5mA 80 150 mV

VOH Output Swing High IL = +5mA 14.85 14.92 V

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

EL5220C, EL5420C

Connection Diagrams (Continued)

ISC Short Circuit Current ±120 mA

IOUT Output Current ±30 mA

Power Supply Performance

PSRR Power Supply Rejection Ratio VS is moved from 4.5V to 15.5V 60 80 dB

ISSupply Current (Per Amplifier) No load 500 750 µA

Dynamic Performance

SR Slew Rate [2] 1V ≤ VOUT ≤ 14V, 20% to 80% 10 V/µs

tSSettling to +0.1% (AV = +1) (AV = +1), VO = 2V step 500 ns

BW -3dB Bandwidth RL = 10kΩ, CL = 10pF 12 MHz

GBWP Gain-Bandwidth Product RL = 10kΩ, CL = 10pF 8MHz

PM Phase Margin RL = 10kΩ, CL = 10 pF 50 °

CS Channel Separation f = 5MHz 75 dB

1. Measured over operating temperature range

2. Slew rate is measured on rising and falling edges

Electrical Characteristics (Continued)

VS+ = 15V, VS- = 0V, RL = 10kΩ and CL = 10pF to 7.5V, TA = 25°C unless otherwise specified.

Parameter Description Condition Min Typ Max Unit

VINA-

VINA+

VS+

VINB+

VINB-

VOUTB

VOUTC

VINC-

VOUTA

VOUTD

VIND-

VIND+

VS-

VINC+

EL5420C

(16-Pin LPP)

Thermal Pad

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

EL5220C, EL5420C

Typical Performance Curves

EL5420C Input Offset Voltage Distribution

400

1200

Quantity (Amplifiers)

Input Offset Voltage (mV)

-12

1800

1600

800

200

1400

1000

600

-10

-8

-6

-4

-2

-0

VS=±5V

TA=25°C

Input Offset Voltage Drift, TCVOS (µV/°C)

Quantity (Amplifiers)

EL5420C Input Offset Voltage Drift

VS=±5V

Input Bias Current vs Temperature

0.0

Input Bias Current (nA)

Temperature (°C)

-2.0

2.0

Output Low Voltage vs Temperature

-4.95

-4.93

Output Low Voltage (V)

-4.97

-4.91

0 15050-50 100

0 150

Temperature (°C)

50-50 100

-4.92

-4.94

-4.96

VS=±5V

IOUT=-5mA

VS=±5V

Output High Voltage vs Temperature

4.94

4.95

Output High Voltage (V)

4.93

4.97

0 150

Temperature (°C)

50-50 100

4.96 VS=±5V

IOUT=5mA

Input Offset Voltage vs Temperature

0 150

Input Offset Voltage (mV)

Temperature (°C)

-5

50-50 100

10 VS=±5V

Typical

Production

Distribution

Typical

Production

Distribution

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

EL5220C, EL5420C

Typical Performance Curves

Open-Loop Gain vs Temperature

Open-Loop Gain (dB)

100

0 150

Temperature (°C)

50-50 100

VS=±5V

RL=10kΩ

EL5420C Supply Current per Amplifier vs Supply Voltage

5 20

400

600

Supply Current (µA)

Supply Voltage (V)

300 100

700

500

TA=25°C

Slew Rate vs Temperature

0 150

10.30

10.35

Slew Rate (V/µS)

Temperature (°C)

10.25

50-50 100

10.40

EL5420C Supply Current per Amplifier vs Temperature

0.5

0.55

Supply Current (mA)

0.45

0 150

Temperature (°C)

50-50 100

VS=±5V

Frequency Response for Various RL

1M 100M

-5

Magnitude (Normalized) (dB)

Frequency (Hz)

-15 10M

100k

-10

10kΩ

1kΩ

560Ω

150Ω

Open Loop Gain and Phase vs Frequency

10 10k 100M

200

Frequency (Hz)

-50

Gain (dB)

Phase(°)

-130

-230

100 1k 100k 1M 10M

150

100

-30

-80

-180

VS=±5V

VS=±5V, TA=25°C

RL=10KΩ to GND

CL=12pF to GND

Phase

Gain

CL=10pF

AV=1

VS=±5V

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

EL5220C, EL5420C

Typical Performance Curves

1M 100M

Frequency (Hz)10M

100k

Magnitude (Normalized) (dB)

-30

-20

-10

Frequency Response for Various CL

RL=10kΩ

AV=1

VS=±5V

Closed Loop Output Impedance vs Frequency

Output Impedance (Ω)

Frequency (Hz)

10k 100

120

200

160

10M

AV=1

VS=±5V

TA=25°C

Maximum Output Swing vs Frequency

Maximum Output Swing (VP-P)

Frequency (Hz)

10k 100

10M

VS=±5V

TA=25°C

AV=1

RL=10kΩ

CL=12pF

Distortion <1%

CMRR vs Frequency

100

CMRR (dB)

Frequency (Hz)

1M 10M

10k 100k

VS=±5V

TA=25°C

PSRR vs Frequency

100

PSRR (dB)

Frequency (Hz)

1M 10M

10k 100k

VS=±5V

TA=25°C

PSRR+

PSRR-

Input Voltage Noise Spectral Density vs Frequency

100 100k 100M

100

Voltage Noise (nV√Hz)

Frequency (Hz)

110M1k 10k 1M

600

12pF

50pF

100pF

1000pF

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

EL5220C, EL5420C

Typical Performance Curves

VS=±5V

TA=25°C

AV=1

RL=10kΩ

CL=12pF

Large Signal Transient Response

1k 10k 100k

0.005

0.008

Total Harmonic Distortion + Noise vs Frequency

Frequency (Hz)

THD+ N (%)

Channel Separation vs Frequency Response

-60

X-Talk (dB)

Frequency (Hz)

-140

-120

-100

-80

0.010

0.001

0.003

1M 6M10k 100k

VS=±5V

RL=10kΩ

AV=1

VIN=220mVRMS

VS=±5V

RL=10kΩ

AV=1

VIN=1VRMS

0.006

0.009

0.007

0.004

0.002

10 100 1000

Small-Signal Overshoot vs Load Capacitance

Load Capacitance (pF)

Overshoot (%)

VS=±5V

AV=1

RL=10kΩ

VIN=±50mV

TA=25°C

Settling Time vs Step Size

800

-2

Step Size (V)

Settling Time (nS) 6000

200 400

-3

-1

-4

VS=±5V

AV=1

RL=10kΩ

CL=12pF

TA=25°C

VS=±5V

TA=25°C

AV=1

RL=10kΩ

CL=12pF

Small Signal Transient Response

Dual measured Channel A to B

Quad measured Channel A to D or B to C

Other combinations yield improved rejection

0.1%

1V 1µS 50mV 200ns

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

EL5220C, EL5420C

Pin Descriptions

EL5420C EL5220C Pin Name Pin Function Equivalent Circuit

1 1 VOUTA Amplifier A Output

Circuit 1

2 2 VINA- Amplifier A Inverting Input

Circuit 2

3 3 VINA+ Amplifier A Non-Inverting Input (Reference Circuit 2)

4 8 VS+ Positive Power Supply

5 5 VINB+ Amplifier B Non-Inverting Input (Reference Circuit 2)

6 6 VINB- Amplifier B Inverting Input (Reference Circuit 2)

7 7 VOUTB Amplifier B Output (Reference Circuit 1)

8 VOUTC Amplifier C Output (Reference Circuit 1)

9VINC- Amplifier C Inverting Input (Reference Circuit 2)

10 VINC+ Amplifier C Non-Inverting Input (Reference Circuit 2)

11 4 VS- Negative Power Supply

12 VIND+ Amplifier D Non-Inverting Input (Reference Circuit 2)

13 VIND- Amplifier D Inverting Input (Reference Circuit 2)

14 VOUTD Amplifier D Output (Reference Circuit 1)

VS+

GND VS-

VS+

VS-

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

EL5220C, EL5420C

Applications Information

Product Description

The EL5220C and EL5420C voltage feedback amplifi-

ers are fabricated using a high voltage CMOS process.

They exhibit rail-to-rail input and output capability, they

are unity gain stable, and have low power consumption

(500µA per amplifier). These features make the

EL5220C and EL5420C ideal for a wide range of gen-

eral-purpose applications. Connected in voltage follower

mode and driving a load of 10kΩ and 12pF, the

EL5220C and EL5420C have a -3dB bandwidth of

12MHz while maintaining a 10V/µs slew rate. The

EL5220C is a dual amplifier while the EL5420C is a

quad amplifier.

Operating Voltage, Input, and Output

The EL5220C and EL5420C are specified with a single

nominal supply voltage from 5V to 15V or a split supply

with its total range from 5V to 15V. Correct operation is

guaranteed for a supply range of 4.5V to 16.5V. Most

EL5220C and EL5420C specifications are stable over

both the full supply range and operating temperatures of

-40 °C to +85 °C. Parameter variations with operating

voltage and/or temperature are shown in the typical per-

formance curves.

The input common-mode voltage range of the EL5220C

and EL5420C extends 500mV beyond the supply rails.

The output swings of the EL5220C and EL5420C typi-

cally extend to within 80mV of positive and negative

supply rails with load currents of 5mA. Decreasing load

currents will extend the output voltage range even closer

to the supply rails. Figure 1 shows the input and output

waveforms for the device in the unity-gain configura-

tion. Operation is from ±5V supply with a 10kΩ load

connected to GND. The input is a 10VP-P sinusoid. The

output voltage is approximately 9.985VP-P.

Figure 1. Operation with Rail-to-Rail Input and

Output

Short Circuit Current Limit

The EL5220C and EL5420C will limit the short circuit

current to ±120mA if the output is directly shorted to the

positive or the negative supply. If an output is shorted

indefinitely, the power dissipation could easily increase

such that the device may be damaged. Maximum reli-

ability is maintained if the output continuous current

never exceeds ±30 mA. This limit is set by the design of

the internal metal interconnects.

Output Phase Reversal

The EL5220C and EL5420C are immune to phase rever-

sal as long as the input voltage is limited from (VS-) ----

-0.5V to (VS+) +0.5V. Figure 2 shows a photo of the

output of the device with the input voltage driven

beyond the supply rails. Although the device's output

will not change phase, the input's overvoltage should be

avoided. If an input voltage exceeds supply voltage by

more than 0.6V, electrostatic protection diodes placed in

the input stage of the device begin to conduct and over-

voltage damage could occur.

VS=±5V

TA=25°C

AV=1

VIN=10VP-P

Output Input

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

EL5220C, EL5420C

Figure 2. Operation with Beyond-the-Rails

Input

Power Dissipation

With the high-output drive capability of the EL5220C

and EL5420C amplifiers, it is possible to exceed the

125°C “absolute-maximum junction temperature” under

certain load current conditions. Therefore, it is important

to calculate the maximum junction temperature for the

application to determine if load conditions need to be

modified for the amplifier to remain in the safe operating

area.

The maximum power dissipation allowed in a package is

determined according to:

where:

TJMAX = Maximum Junction Temperature

TAMAX= Maximum Ambient Temperature

θJA = Thermal Resistance of the Package

PDMAX = Maximum Power Dissipation in the Package

The maximum power dissipation actually produced by

an IC is the total quiescent supply current times the total

power supply voltage, plus the power in the IC due to the

loads, or:

when sourcing, and:

when sinking.

where

i = 1 to 2 for Dual and 1 to 4 for Quad

VS = Total Supply Voltage

ISMAX = Maximum Supply Current Per Amplifier

VOUTi = Maximum Output Voltage of the Application

ILOADi = Load Current

If we set the two PDMAX equations equal to each other,

we can solve for RLOADi to avoid device overheat. Fig-

ures 3, 4, and 5 provide a convenient way to see if the

device will overheat. The maximum safe power dissipa-

tion can be found graphically, based on the package type

and the ambient temperature. By using the previous

equation, it is a simple matter to see if PDMAX exceeds

the device's power derating curves. To ensure proper

operation, it is important to observe the recommended

derating curves in Figures 3, 4, and 5.

Figure 3. Package Power Dissipation vs

Ambient Temperature

VS=±2.5V

TA=25°C

AV=1

VIN=6VP-P

1V 100µs

PDMAX

TJMAX TAMAX

–

ΘJA

------------------------------------------------

PDMAX ΣiV

SISMAX VS+(VOUTi)ILOADi×–+×[]×=

PDMAX ΣiV

SISMAX VOUTi(VS-)ILOADi×–+×[]×=

400

800

Power Dissipation (mW)

Ambient Temperature (°C)

1200 MAX TJ=125°C

1000

600

200

TSSOP14

θJA=100°C/W

25 50 75 100 125 15085

JEDEC JESD51-7 High Effective Thermal Conductivity (4-

Layer) Test Board

LPP exposed diepad soldered to PCB per JESD51-5

1.136W

SO14

θJA=88°C/W

1.0W

870mW

MSOP8

θJA=115°C/W

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

EL5220C, EL5420C

Figure 4. Package Power Dissipation vs

Ambient Temperature

Figure 5. Package Power Dissipation vs

Ambient Temperature

Unused Amplifiers

It is recommended that any unused amplifiers in a dual

and a quad package be configured as a unity gain fol-

lower. The inverting input should be directly connected

to the output and the non-inverting input tied to the

ground plane.

Driving Capacitive Loads

The EL5220C and EL5420C can drive a wide range of

capacitive loads. As load capacitance increases, how-

ever, the -3dB bandwidth of the device will decrease and

the peaking increase. The amplifiers drive 10pF loads in

parallel with 10kΩ with just 1.5dB of peaking, and

100pF with 6.4dB of peaking. If less peaking is desired

in these applications, a small series resistor (usually

between 5Ω and 50Ω) can be placed in series with the

output. However, this will obviously reduce the gain

slightly. Another method of reducing peaking is to add a

“snubber” circuit at the output. A snubber is a shunt load

consisting of a resistor in series with a capacitor. Values

of 150Ω and 10nF are typical. The advantage of a snub-

ber is that it does not draw any DC load current or

reduce the gain

Power Supply Bypassing and Printed Circuit

Board Layout

The EL5220C and EL5420C can provide gain at high

frequency. As with any high-frequency device, good

printed circuit board layout is necessary for optimum

performance. Ground plane construction is highly rec-

ommended, lead lengths should be as short as possible

and the power supply pins must be well bypassed to

reduce the risk of oscillation. For normal single supply

operation, where the VS- pin is connected to ground, a

0.1µF ceramic capacitor should be placed from VS+ to

pin to VS- pin. A 4.7µF tantalum capacitor should then

be connected in parallel, placed in the region of the

amplifier. One 4.7µF capacitor may be used for multiple

devices. This same capacitor combination should be

placed at each supply pin to ground if split supplies are

to be used.

MAX TJ=125°C

606mW

833mW

400

800

Power Dissipation (mW)

Ambient Temperature (°C)

1200

1000

600

200

25 50 75 100 125 15085

SO14

θJA=120°C/W

MSOP8

θJA=206°C/W

JEDEC JESD51-3 and SEMI G42-88 (Single Layer) Test

Board

667mW

485mW

TSSOP14

θJA=165°C/W

LPP16

θJA=150°C/W

JEDEC JESD51-7 High Effective Thermal Conductivity (4-

Layer) Test Board

(LPP exposed diepad soldered to PCB per JESD51-5)

2.5

1.5

0.5

00 25 50 75 100 125 150

Ambient Temperature (°C)

Power Dissipation (W)

2.500W

LPP16

40°C/W

EL5220C, EL5420C

12MHz Rail-to-Rail Input-Output Op Amps

EL5220C, EL5420C

General Disclaimer

Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the cir-

cuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described

herein and makes no representations that they are free from patent infringement.

WARNING - Life Support Policy

Elantec, Inc. products are not authorized for and should not be used

within Life Support Systems without the specific written consent of

Elantec, Inc. Life Support systems are equipment intended to sup-

port or sustain life and whose failure to perform when properly used

in accordance with instructions provided can be reasonably

expected to result in significant personal injury or death. Users con-

templating application of Elantec, Inc. Products in Life Support

Systems are requested to contact Elantec, Inc. factory headquarters

to establish suitable terms & conditions for these applications. Elan-

tec, Inc.’s warranty is limited to replacement of defective

components and does not cover injury to persons or property or

other consequential damages.

September 19, 2001

Printed in U.S.A.

Elantec Semiconductor, Inc.

675 Trade Zone Blvd.

Milpitas, CA 95035

Telephone: (408) 945-1323

(888) ELANTEC

Fax: (408) 945-9305

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