BIPOLAR ANALOG INTEGRATED CIRCUIT uPC811 J-FET INPUT LOW-OFFSET OPERATIONAL AMPLIFIER DESCRIPTION The pPC811 operational amplifier offers high input impedance, low offset voltage, high slew rate, and stable AC operating characteristics. NECs unique high-speed PNP transistor (ft = 300 MHz) in the output stage solves the oscillation problem of current sink- ing with a large capacitive foad. Zener-zap resistor trimming in the input stage produces excellent offset voltage and temperature drift characteristics. FEATURES Stable operation with 10 000 pF capacitive load @ Low input offset voltage and offset voltage null capability +2.5 mV (MAX.} +7 wV/C (TYP.) temperature drift Very low input bias and offset currents Low noise : en = 19 nV/VHz (TYP.) Output short circuit protection High input impedance ... J-FET Input Stage Internal frequency compensation High slew rate: 15 V/s (TYP.) CONNECTION DIAGRAM EQUIVALENT CIRCUIT (Top View) Ov @ (7) pPCB11C, 811G2 VU OFFSET { Qe nuLL U 8] NC Os. (2) : i i [2] 7] Vv Qh Qe mn OUT Ory. in [3] [6] OUTPUT Ci wo) 1 | eG, (HIGH SPEED 1] Dr *\ pNP via 5] OFFSET << [yo NULL (5) { Os OFFSET OFFSET NULL NULL a OV TRIMMED ORDERING INFORMATION PART NUMBER PACKAGE QUALITY GRADE uPC811C 8 PIN PLASTIC DIP (300 mil) Standard EPC811G2 8 PIN PLASTIC SOP (225 mil) Standard Please refer to Quality grade on NEC Semiconductor Devices {Document number IEl-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. Document No. IC-1980A _ (0.D, No. [C-6802A) Date Published March 1993 M Printed in Japan NEC Corporation 1987NEC uPC811 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) PARAMETER SYMBOL uPC811 UNIT Voltage between V* and V- (Note1} Vey -0.3 to +36 Vv Differential Input Voltage Vio +30 Vv Input Voltage (Note 2} Vi V- -0.3 to V* +0.3 V Output Voltage (Note 3) Vo V- -0.3 to V+ +0.3 Vv Power Dissipation C_Package Newt Pr 380 mw G2 Package (Note 5) 440 mw Output Short Circuit Duration {Note 6} Indefinite sec Operating Temperature Range Topt 40 to +85 c Storage Temperature Range Tstg ~55 to +125 c Note 1. Reverse connection of supply voltage can cause destruction. Note 2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. Note 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. Note 4. Thermal derating factor is -5.0 mV/C when ambient temperature is higher than 55 C. Note 5. Thermal derating factor is ~-4.4 mV/C when ambient temperature is higher than 25 C. Note 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Supply Voltage Vi +5 +16 Vv Output Current lo +10 mA Capacitive Load (Av = +1, Re = 0 Q) Cu 10 000 pF OFFSET VOLTAGE NULL CIRCUITNEC uPC811 ELECTRICAL CHARACTERISTICS (Ta = 25 C, V* = +15 V) CHARACTERISTIC SYMBOL| MIN. TYP, MAX. UNIT CONDITION input Offset Voltage Vio +1 42.5 mV Rs 500 Input Offset Current Nete?) ho 25 +100 pA Input Bias Current (Note7} Ip 50 200 pA Large Signal Voltage Gain Av 25 200 VimV Ri 22 kQ, Vo =+10V Supply Current loc 2.5 3.4 mA lo=O0A Common Mode Rejection Ratio CMR 70 100 dB Supply Voltage Rejection Ratio SVR 70 100 dB Output Voltage Swing Vom +12 ve Vv Ri 2 10 kQ Output Voltage Swing Vom +10 Oe V Ri 22 kQ Common Model Input Voltage Range Viem +11 - Vv Slew Rate SR 15 Vins Av =1 Unity Gain Frequency funity 4 MHz Input Equivalent Noise Voltage Density @n 19 nv/VHz Rs = 100 , f= 1 kHz Input Offset Voltage Vio +5 mV Rs 3 50 Q, Ta = -20 to +70 C Average VIO Temperature Drift AVio/ AT +7 BVEEC Ta = -20 to +70 C Input Offset Current {Note7) lo 2 nA Ta = -20 to +70 C Input Bias Current (Note?) Is 7 nA Ta = -20 to +70 C Note 7. input bias currents flow into IC. Because each currents are gate leak current of P-channel J-FET on input stage. And that are temperature sensitive. Short time measuring method is recommendable to maintain the junction temperature close to the ambient temperature.NEC uPC811 TYPICAL PERFORMANCE CHARACTERISTICS (Ta = 25 C, TYP.) Vom Output Voltage Swing Vp. Pr Total Power Dissipation - mW Vom* ~ Positive Output Voltage - V 600 500 400 300 200 100 30 20 +15 +10 +5 POWER DISSIPATION 20 40 60 8 Ta - Ambient Temperature ~ 0 100 Cc LARGE SIGNAL FREQUENCY RESPONSE | Vi = 215V Ris 10 kQ \ VF=+10V \ VF 2+5V \ \ 100 1k 10k 100 k 1M 10M f - Frequency Hz OUTPUT SOURCE CURRENT L IMIT p aw Yj p$ Vi=+15V l Ta = 70 I N 25C ~20 C r~ 10 20 30 lo source Source Current - mA Vom ~ Output Voltage Swing Vep Av - Open Loop Voltage Gain - dB Vom Negative Output Voltage - V 120 100 80 60 40 20 40 30 20 10 OPEN LOOP FREQUENCY RESPONSE . ey N\ \ AN \ \ 1 10 100 tk 10k 100k 1M 10M f ~ Frequency ~ Hz OUTPUT VOLTAGE SWING Ri = 10 kQ ZO Zo ~" 4 +10 + 20 V* Supply Voltage - V OUTPUT SINK CURRENT LIMIT Pee Vi =+15V | Ta = 70C 25 C -20C 10 20 30 lo sink Sink Current - mANEC uPC811 INPUT BIAS CURRENT nV/WHz n ~ Input Equivalent Noise Voltage Density 100 VF=415V ; 10 Ee 2 5 ra o % 1.0 i 8 2 01 Z| \ . L = Le 0.01 -20 0 20 40 60 Ta - Ambient Temperature C SUPPLY CURRENT 3.5 3.0 <x f 2.5 t . _ = 2.0 = o 2 15 a a , 1.0 3 0.5 0 +5 +10 215 +20 V* ~ Supply Voltage V VOLTAGE FOLLOWER PULSE RESPONSE (V*=+15V, Av=1) (Ri = 2 kQ, Ci = 100 pF) INPUT EQUIVALENT NOISE VOLTAGE DENSITY 50 VF =+15V Rs = 1009 40 30 20 > 10 0 10 700 1k 10k 100k f - Frequency - Hz VOLTAGE FOLLOWER PULSE RESPONSE (Vt =+415V, Av=1) (Ru = 2 kQ, Cc = 10 000 pF) (V) ; ; +10NEC 8 PIN PLASTIC DIP (300 mil} 8 5 NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) ftem K to center of leads when formed parallel. K aa M O~15 P8C-100-300B,C | ITEM MILLIMETERS INCHES | oa 10.16 MAX. 0.400 MAX. lB 1.27 MAX. 0.050 MAX. / 2.54 (T.P.} 0.100 (T.P.) D 0.50*.' 0.020 =8:885 F 1.4 MIN. 0.055 MIN. G 3.2 0.3 0.126"? O12 H 0.51 MIN. 0.020 MIN. 4.31 MAX. 0.170 MAX. J 5.08 MAX. 0.200 MAX. | K 7.62 (T.P.) 0.300 (T.P.) L 6.4 0.252 M 0.25 78:48 0.010 78:603 N 0.25 0.01 p 0.9 MIN. 0.035 MIN. uPC811NEC 8 PIN PLASTIC SOP (225 mil) 1 4 A oO | LI to | 2 A bd elu w NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. detail of lead end ot]? 330 H | | J M_| DY Or rr ITT L | N S8GM-50-225B-2 ITEM| MILLIMETERS INCHES A 5.37 MAX. 0.212 MAX. B 0.78 MAX. 0.031 MAX. c 1.27 (T.P.) 0.050 (T.P.) D 0.40838 0.016%5-358 E 0.1+0.1 0.004+0.004 F 1.8 MAX. 0.071MAX. G 1.49 0.059 H 6.5+0.3 0.256+0.012 | 4.4 0.173 J 1.1 0.043 K 0.15%3:29 0.006%8-094 L 0.60.2 0.02479 :898 M 0.12 0.005 N 0.15 0.006 uUPC811NEC RECOMMENDED SOLDERING CONDITIONS uPC811 The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. TYPES OF SURFACE MOUNT DEVICE For more details, refer to our document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (IEI-1207). [ uPC811G2 ] Soldering method Soldering conditions Recommended condition symbol Infrared ray reflow Peak packages surface temperature: 230 C or below, Number of flow process: 1, Exposure limit*: None Reflow time: 30 seconds or below (210 C or higher), IR30-00-1 Number of reflow process: 1, Exposure limit*: None VPS Peak packages surface temperature: 215 C or below, Reflow time: 40 seconds or below (200 C or higher), VP15-00-1 Number of reflow process: 1, Exposure limit*: None Wave soldering Solder temperature: 260 C or below, Flow time: 10 seconds or below WS 15-00-1 Partial heating method Terminal temperature: 300 C or below, Flow time: 10 seconds or below, Exposure limit*: None *: Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 C and relative humidity at 65 % or less. Note: Do not apply more than a single process at once, except for Partial heating method. TYPES OF THROUGH HOLE DEVICE [wPC811C] Soldering . vg: Recommended method Soldering conditions condition symbol Wave soldering Solder temperature: 260 C or below, | Flow time: 10 seconds or belowNEC uPC811 [MEMO]NEC uPC811 [MEMO] No part of this document may be copied or reproduced in any from or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systerns, Antidisaster systems, Anticrime systems, etc. M4 92.6