SPECIFICATIONS General Series 2N6674, 2N66/75 High Voltage NPN Transistors 10 Amperes * 400 Volts FEATURES @ High Voltage Rating 400 Volts @ Industrial and Military Applications @ Superior Resistance to Thermal Fatique APPLICATIONS @ Switching Regulators @ PWM Inverters Deflection Circuits Motor Controls @ Solenoid Drivers Switch time and sustaining test circuit The 2N6674 and 2N6675 series transistors are high-voltage, high-gain, NPN, 10 ampere switching vooe transistors for Industrial and Military Service. ON TIME I The series is particularly well suited to off-line [7] ; (transformerless) switching power supplies operating C iNsoNs as high as 40 KHz. Other applications include PWM PULSE | 4 VCLAMP Inverters, Motor Controls, Relay and Solenoid cMos g Drivers, Deflection Circuits and Pulse Modulators. 8 a 1. Resistive switch time 2. VCEO(SUS) 3. Inductive switch time 1.050 __e (26.68) MAX. ___ 0,450 (11.43) 0.135 tr MAX, oa . 0.250 (6.35) (3.43) MAX. _ + SEATING T }>_ PLANE 0.675 (17.65)t 1.197 (30.40) 1.573 0.655 (16.64) 1.177 (29.90) (39.96) MAX. te 0.225 (5.72)t 0.205 (5.21) 0.440 (11.18)t 0.420 (10.67) TMEASURED AT SEATING PLANE L_. 0.32 (8.13) MIN. 9.043 (1.09) 1). 0.038 (0.97) Basic dimensions in inches. Dimensions shown in PARENTHESES are in millimeters. Package outline JEDEC TO-204MA (Formerly JEDEC TO-3) AVAILABLE IN STANDARD VALUES FROM STOCK AT ELECTRONIC DISTRIBUTORS. 300 SERIES 2N6674/2N6675 High Voltage Fast Switching NPN Transistors Absolute maximum ratings Description 2N6674 2N6675 Unit Conditions VCBO Collector-Base Voltage 450 650 Volts VCEO Collector-Emitter Voltage 300 400 Volts _VCEX Collector-Emitter Voltage 350 450 Volts Ic Collector Current Continuous 15 A Ic Collector Current Peak 20 A IB Base Current Continuous 5 A IB Base Current Peak 10 A Pp Maximum Power Dissipation 175 WwW Tc = 25C IE Emitter Current Continuous 15 A IE Emitter Current Peak 20 A Electrical characteristics at 25C (unless otherwise specified) 2N6674 2N6675 Description Min. Max. Min. Max. Unit Conditions VCEO(sus) Collector-Emitter @ Ic = .2A, L = 2mH (sus) Sustaining Voltage 300 400 Vv Ip =0 VCEX Collector-Emitter @ Ic = 104, Ip1 = 2A (sus) Sustaining Voltage 350 450 V VBE (off) = 6V VCE = Rated VCBO 0.1 0.1 mA I Collector Cutoff Current VBE(otf _= CEV . Collector Cutoff Curren VCE = Rated VCBO 1.0 10 mA | VBE(off) = -1.5V, TC = +100C IEBO Emitter Cutoff Current @ 2 2 mA | VEB = 8V 1 1 Vv Ic = 10A, IB = 2A Collector-Emitter = _ _ VCE(sat) c na 2 2 Vv Ic = 10A, IB = 2A, Tc = +100C Saturation Voltage 5 5 v Ic = 15A, Ip = 5A VBE(sat Base-Emitter = = (sat) Saturation Voltage 9 @ 15 15 V IC = 104, IB = 2A hFE DC Current Gain 8 @ 8 20 8 20 Ic = 10A, VCE = 5V fT Gain-Bandwidth Product 15 50 15 50 MHz | IC = 14, VCE = 10V ftest = 5MHz COB Output Capacitance 150 500 150 500 pF |VcE = 10V, ftest = .IMHz Is/b Second Breakdown VCE = 30V Collector Current 5.9 5.9 A Non Rep tp = ls Switching characteristics Description Resistive Load Min. Max. Min. Max. Unit Conditions i . 1 td Delay Time oO 0.1 0 us Vcc = 138V, Ic = 10A ty Rise Time @ 0.6 0.6 us IB] = 2A, Ip2 = 2A, tp = 20us ts Storage Time 2.5 2.5 us nye Vv P = VBE(off) = 6 tf Fall Time Mf 0.5 0.5 us Description Inductive Load, Clamped Min. Max. Min. Max. Unit Conditions Vclamp = VCEX, Ic = 10A te Commutation Time 0.5 0.5 ps |IB1 = 2A, IB2 = -2A VBE(off) = 6V, L = 50uH Velamp = VCEX. Tc = +100C te Commutation Time 0.8 0.8 us |IB1 = 2A, IB2 = 2A, Ic = 10A VBE(off) = 6V, L = 50uH Thermal and mechanical characteristics Description Type Min. Typ. Max. Unit Conditions Raesc Thermal Resistance Junction to Case All 1.0 cw Maximum Lead Temperature for Soldering 275 C Purposes: 4/3 from Case for 5 Seconds tJ, tSTG Operating and Storage Junction _ Temperature Range 65 200 c fl IN ACCORDANCE WITH JEDEC REGISTRATION DATA. @ PULSE TEST: PW = 300 ws, DUTY CYCLE <2% 301