PD - 96031A IRF7805PbF HEXFET(R) Chip-Set for DC-DC Converters * * * * * N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7805PbF offers maximum efficiency for mobile CPU core DC-DC converters. A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w Device Features RDS(on) IRF7805PbF 30V 11m Qg 31nC Qsw 11.5nC Qoss 36nC VDS Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage Max. Units 30 V 12 VGS Gate-to-Source Voltage ID @ TA = 25C Continuous Drain Current, VGS @ 10V 13 ID @ TA = 70C Continuous Drain Current, VGS 10 IDM Pulsed Drain Current PD @TA = 25C Power Dissipation c PD @TA = 70C e Power Dissipation e TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range e @ 10V e A 100 2.5 W 1.6 0.02 -55 to + 150 W/C C Thermal Resistance Parameter RJL RJA www.irf.com g Junction-to-Ambient eg Junction-to-Drain Lead Typ. Max. Units --- 20 C/W --- 50 1 01/09/08 IRF7805PbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units RDS(on) VGS(th) h Static Drain-to-Source On-Resistanceh Gate Threshold Voltage h IDSS Drain-to-Source Leakage Current BVDSS Drain-to-Source Breakdown Voltage --- --- V VGS = 0V, ID = 250A --- 1.0 9.2 --- 11 3.0 m V VGS = 4.5V, ID = 7.0A VDS = VGS, ID = 250A --- --- --- --- 70 10 A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V IGSS Gate-to-Source Forward Leakage --- --- --- --- 150 100 Qg Gate-to-Source Reverse Leakage Total Gate Charge --- --- --- 22 -100 31 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge --- --- 3.7 1.4 --- --- --- --- 6.8 8.2 --- 11.5 Qoss Gate-to-Drain Charge Switch Charge (Qgs2 + Qgd) Output Charge --- 3.0 RG td(on) tr Gate Resistance Turn-On Delay Time Rise Time 0.5 --- --- --- 16 20 td(off) tf Turn-Off Delay Time Fall Time --- --- 38 16 --- --- h Qgs1 Qgs2 Qgd Qsw h h Conditions 30 nA VDS = 24V, VGS = 0V, TJ = 100C VGS = 12V VGS = -12V VGS = 5.0V nC VDS = 16V ID = 7.0A 3.6 nC VDS = 16V, VGS = 0V 1.7 --- --- ns d VDD = 16V, VGS = 4.5V ID = 7.0A e RG= 2 Resistive Load Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 2.5 ISM (Body Diode) Pulsed Source Current --- --- 106 VSD Qrr (Body Diode) Diode Forward Voltage Reverse Recovery Charge --- --- --- 88 1.2 --- --- 55 --- c h Qrr(s) Reverse Recovery Charge (with Parallel Schottky) f f Conditions MOSFET symbol A showing the integral reverse V p-n junction diode. TJ = 25C, IS = 7.0A, VGS = 0V di/dt = 700A/s nC nC VDS = 16V, VGS = 0V, IS = 7.0A di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A Notes: 2 Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss R is measured at TJ of approximately 90C. Devices are 100% tested to these parameters. www.irf.com IRF7805PbF Typical Characteristics Fig 1. Normalized On-Resistance vs. Temperature Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage ISD , Reverse Drain Current (A) 10 TJ = 150 C 1 TJ = 25 C V GS = 0 V 0.1 0.4 0.5 0.6 0.7 0.8 0.9 VSD ,Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 0.1 0.001 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) www.irf.com Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 3 IRF7805PbF SO-8 Package Details ' ,1&+(6 0,1 0$; $ $ E F ' ( H %$6,& H %$6,& + . / \ ',0 % $ + ( ; >@ $ H H ;E >@ $ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & \ >@ ;/ ;F & $ % 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( )22735,17 ;>@ >@ ;>@ ;>@ SO-8 Part Marking (;$03/(7+,6,6$1,5) 026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'( <:: 3 '(6,*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 4 www.irf.com IRF7805PbF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/2008 www.irf.com 5