Order this document by MUN5211DW1T1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series, two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium. 6 5 4 1 2 3 CASE 419B-01, STYLE 1 SOT-363 * Simplifies Circuit Design * Reduces Board Space (3) * Reduces Component Count (2) * Available in 8 mm, 7 inch/3000 Unit Tape and Reel. R1 (1) R2 Q1 Q2 R2 (4) R1 (5) (6) MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol Value Unit VCBO VCEO 50 Vdc 50 Vdc IC 100 mAdc RJA 833 C/W TJ, Tstg PD - 65 to +150 C *150 mW THERMAL CHARACTERISTICS Thermal Resistance -- Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25C(1) DEVICE MARKING AND RESISTOR VALUES: MUN5211DW1T1 SERIES Device MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1(2) MUN5216DW1T1(2) MUN5230DW1T1(2) MUN5231DW1T1(2) MUN5232DW1T1(2) MUN5233DW1T1(2) MUN5234DW1T1(2) MUN5235DW1T1(2) Marking R1 (K) R2 (K) 7A 7B 7C 7D 7E 7F 7G 7H 7J 7K 7L 7M 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 10 22 47 47 1.0 2.2 4.7 47 47 47 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New resistor combinations. Updated curves to follow in subsequent data sheets. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Small-Signal Transistors, FETs and Diodes Device Data Motorola Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO -- -- 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO -- -- 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 -- -- Vdc Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 -- -- Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 -- -- -- -- -- -- -- -- -- -- -- -- VCE(sat) -- -- 0.25 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 ON CHARACTERISTICS(3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5230DW1T1/MUN5231DW1T1 (IC = 10 mA, IB = 1 mA) MUN5215DW1T1/MUN5216DW1T1 MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) VOL MUN5211lDW1T1 MUN5212DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5213DW1T1 Vdc Vdc 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic Symbol Min Typ Max Unit VOH 4.9 -- -- Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 k R1/R2 0.8 0.17 -- 0.8 0.055 0.38 0.038 1.0 0.21 -- 1.0 0.1 0.47 0.047 1.2 0.25 -- 1.2 0.185 0.56 0.056 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5230DW1T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5215DW1T1 MUN5216DW1T1 MUN5233DW1T1 Input Resistor MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 Resistor Ratio MUN5211DW1T1/MUN5212DW1T1/MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1/MUN5216DW1T1 MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 - 50 RJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5211DW1T1 TA = -25C 25C 0.1 75C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA = 75C 25C -25C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 2 1 0 25C 75C f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 4 3 100 TA = -25C 10 1 0.1 0.01 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 VO = 5 V 0.001 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance 10 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 6. Input Voltage versus Output Current 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5212DW1T1 IC/IB = 10 25C TA = -25C 0.1 75C 0.01 TA = 75C 25C -25C 100 10 0.001 0 20 40 50 10 1 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 100 f = 1 MHz IE = 0 V TA = 25C 3 IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) VCE = 10 V 2 1 75C 25C TA = -25C 10 1 0.1 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5213DW1T1 IC/IB = 10 1 25C TA = -25C 75C 0.1 0.01 0 TA = 75C 25C -25C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V 1 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 f = 1 MHz IE = 0 V TA = 25C 0.6 0.4 TA = -25C 10 1 0.1 0.01 0.2 0 25C 75C IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 0.8 100 10 IC, COLLECTOR CURRENT (mA) 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) VO = 5 V 0.001 50 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 15. Output Current versus Input Voltage Figure 14. Output Capacitance 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data 1 300 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5214DW1T1 TA = -25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25C 200 -25C 150 100 50 0 80 TA = 75C VCE = 10 250 2 1 4 6 Figure 17. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25C 3 TA = 75C IC, COLLECTOR CURRENT (mA) 3.5 Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 2.5 2 1.5 1 0.5 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 Figure 19. Output Capacitance 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage versus Output Current Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 INFORMATION FOR USING THE SOT-363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOT-363 EE EE EE EE EE EE EE EE EE EE EE EE EE EE 0.65 mm 0.65 mm 0.4 mm (min) 0.5 mm (min) 1.9 mm SOT-363 POWER DISSIPATION The power dissipation of the SOT-363 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows: PD = TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C = 150 milliwatts 833C/W The 833C/W for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 8 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. * The soldering temperature and time should not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small-Signal Transistors, FETs and Diodes Device Data SOLDER STENCIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 25 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the STEP 1 PREHEAT ZONE 1 "RAMP" 200C STEP 2 STEP 3 VENT HEATING "SOAK" ZONES 2 & 5 "RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 -189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 6 STEP 7 VENT COOLING STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 "SPIKE" "SOAK" 205 TO 219C PEAK AT SOLDER JOINT 170C 160C 150C 150C 140C 100C 100C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES 50C TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 22. Typical Solder Heating Profile Motorola Small-Signal Transistors, FETs and Diodes Device Data 9 PACKAGE DIMENSIONS A G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. V 6 5 4 1 2 3 DIM A B C D G H J K N S V -B- S 0.2 (0.008) D 6 PL M B M INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 N STYLE 1: PIN 1. 2. 3. 4. 5. 6. J C EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 K H CASE 419B-01 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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