PD - 95970A IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. Lead-Free VCE(on) typ. = 1.59V G @VGE = 15V, IC = 17A E n-channel Benefits Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specific application conditions. HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing. Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's. D2Pak Absolute Maximum Ratings Parameter Max. Units V VCES Collector-to-Emitter Voltage 600 IC @ TC = 25C Continuous Collector Current 31 IC @ TC = 100C ICM Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) ILM Clamped Inductive Load current IF @ TC = 100C Diode Continuous Forward Current 12 IFM Diode Maximum Forward Current 120 d 17 c A 124 124 VGE Gate-to-Emitter Voltage 20 V PD @ TC = 25C Maximum Power Dissipation 100 W PD @ TC = 100C Maximum Power Dissipation Operating Junction and TJ 42 TSTG -55 to +150 C Storage Temperature Range Thermal / Mechanical Characteristics Parameter RJC Junction-to-Case- IGBT RCS Case-to-Sink, flat, greased surface RJA Junction-to-Ambient (PCB Mounted,steady state) Wt Weight www.irf.com g Min. Typ. Max. Units --- --- 1.2 C/W --- 0.50 --- --- --- 40 --- 2.0 (0.07) --- g (oz.) 1 01/27/10 IRG4BC30FD-SPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter e V(BR)CES Collector-to-Emitter Breakdown Voltage V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Voltage Min. Typ. Max. Units 600 -- -- -- 0.69 -- -- 1.59 1.8 -- 1.99 -- -- 1.7 -- VGE(th) Gate Threshold Voltage 3.0 -- 6.0 VGE(th)/TJ Threshold Voltage temp. coefficient -- -11 -- gfe ICES Forward Transconductance Zero Gate Voltage Collector Current 6.1 10 -- -- -- 250 -- -- 2500 -- 1.4 1.7 -- 1.3 1.6 -- -- 100 VFM f Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V Conditions VGE = 0V, IC = 250A V/C VGE = 0V, IC = 1mA IC = 17A V VGE = 15V IC = 31A See Fig. 2, 5 IC = 17A, TJ = 150C V VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 250A S VCE = 100V, IC = 17A A VGE = 0V, VCE = 600V V IF = 12A VGE = 0V, VCE = 600V, TJ = 150C See Fig. 13 IF = 12A, TJ = 150C nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Total Gate Charge (turn-on) Conditions Min. Typ. Max. Units -- 51 IC = 17A 77 VCC = 400V Qge Gate-to-Emitter Charge (turn-on) -- 7.9 12 Qgc Gate-to-Collector Charge (turn-on) -- 19 28 td(on) Turn-On delay time -- 42 -- tr Rise time -- 26 -- td(off) Turn-Off delay time -- 230 350 VGE = 15V, RG = 23 tf Fall time -- 160 230 Energy losses inlcude "tail" and Eon Turn-On Switching Loss -- 0.63 -- Eoff Turn-Off Switching Loss -- 1.39 -- Ets Total Switching Loss -- 2.02 3.9 td(on) Turn-On delay time -- 42 -- tr Rise time -- 27 -- td(off) Turn-Off delay time -- 310 -- tf Fall time -- 310 -- Ets Total Switching Loss -- 3.2 -- mJ diode reverse recovery. LE Internal Emitter Inductance -- 7.5 -- nH Cies Input Capacitance -- 1100 -- Measured 5mm from package VGE = 0V -- 74 -- pF VCC = 30V ns TJ = 25C Coes Output Capacitance Cres Reverse Transfer Capacitance -- 14 -- trr Diode Reverse Recovery Time -- 42 60 -- 80 120 6.0 Irr Diode Peak Reverse Recovery Current -- 3.5 -- 5.6 10 Qrr Diode Reverse Recovery Charge -- 80 180 220 600 di(rec)M/dt Diode Peak Rate of Fall of Recovery -- 180 -- During tb -- 120 -- 2 nC See Fig. 8 VGE = 15V TJ = 25C ns IC = 17A, VCC = 480V diode reverse recovery. mJ See Fig. 9, 10, 11, 18 TJ = 150C ns See Fig. 9,10,11,18 IC = 17A, VCC = 480V VGE = 15V, RG = 23 Energy losses inlcude "tail" and See Fig. 7 f = 1.0MHz TJ = 125C A TJ = 25C nC TJ = 25C TJ = 125C TJ = 125C A/s TJ = 25C TJ = 125C See Fig. 14 IF = 12A See Fig. 15 VR = 200V See Fig. 16 di/dt 200A/s See Fig. 17 www.irf.com IRG4BC30FD-SPbF www.irf.com 3 IRG4BC30FD-SPbF 4 www.irf.com IRG4BC30FD-SPbF www.irf.com 5 IRG4BC30FD-SPbF 6 www.irf.com IRG4BC30FD-SPbF www.irf.com 7 IRG4BC30FD-SPbF 90% Vge Same type device as D.U.T. +Vge Vce 430F 80% of Vce D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of t1+5S Vce icIcdtdt Vce t1 ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg trr Ic Qrr = tx DUT VOLTAGE AND CURRENT Vce 10% Ic 90% Ic tr td(on) 10% Irr Ipk Vpk Vcc Irr Ic DIODE RECOVERY WAVEFORMS 5% Vce t1 t2 VceieIcdt dt Eon = Vce t1 t2 DIODE REVERSE RECOVERY ENERGY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 +Vg 10% Vcc Vcc trr id Ic dtdt tx t4 Erec = Vd VdidIcdt dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4BC30FD-SPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig.18e - Macro Waveforms for Figure 18a's Test Circuit RL = VCC ICM D.U.T. L 1000V Vc* 50V 6000F 100V 0 - VCC 480F Pulsed Collector Current Test Circuit Fig. 19 - Clamped Inductive Load Test Circuit www.irf.com Fig. 20 - Pulsed Collector Current Test Circuit 9 IRG4BC30FD-SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(/ ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 )6 '$7(&2'( <($5 :((. /,1(/ 3$57180%(5 )6 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRG4BC30FD-SPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20). VCC=80%(VCES), VGE=20V, L=10H, RG = 23 (figure 19). Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. When mounted on 1" square PCB (FR-4 or G-10 Material). Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/2010 www.irf.com 11