IRG4BC30FD-SPbF
01/27/10
www.irf.com 1
VCES = 600V
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
E
G
n-channel
C
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
HYPERFAST DIODE
Features
Fast: optimized for medium operating frequencies
(1-5 kHz in hard switching, >20kHz in resonant mode).
 Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3.
 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft
recovery anti-parallel diodes for use in bridge configurations.
Lead-Free
Benefits
Generation 4 IGBT's offer highest efficiency available.
 IGBT's optimized for specific application conditions.
 HEXFRED diodes optimized for performance with IGBT's.
Minimized recovery characteristics require less/no
snubbing.
 Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's.
D2Pak
Absolute Maximum Ratings
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 31
I
C
@ T
C
= 100°C Continuous Collector Current 17 A
I
CM
Pulse Collector Current (Ref.Fig.C.T.5)
c
124
I
LM
Clamped Inductive Load current
d
124
I
F
@ T
C
= 100°C Diode Continuous Forward Current 12
I
FM
Diode Maximum Forward Current 120
V
GE
Gate-to-Emitter Voltage ±20 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 100 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 42
T
J
Operating Junction and -55 to +150 °C
T
STG
Storage Temperature Range
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case- IGBT ––– ––– 1.2 °C/W
R
θCS
Case-to-Sink, flat, greased surface ––– 0.50 –––
R
θJA
Junction-to-Ambient (PCB Mounted,steady state)
g
––– ––– 40
Wt Weight ––– 2.0 (0.07) ––– g (oz.)
PD - 95970A
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V(BR)CES Collector-to-Emitter Breakdown Voltage
e
600——V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage —0.69—V/°C
VGE = 0V, IC = 1mA
— 1.59 1.8 IC = 17A VGE = 15V
VCE(on) Collector-to-Emitter Voltage — 1.99 — V IC = 31A See Fig. 2, 5
—1.7— IC = 17A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 250µA
∆VGE(th)/∆TJThreshold Voltage temp. coefficient — -11 — mV/°
C
VCE = VGE, IC = 250
µ
A
gfe Forward Transconductance
f
6.1 10 — S VCE = 100V, IC = 17A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 2500 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop — 1.4 1.7 V IF = 12A See Fig. 13
—1.31.6 IF = 12A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
QgTotal Gate Charge (turn-on) — 51 77 IC = 17A
Qge Gate-to-Emitter Charge (turn-on) — 7.9 12 nC VCC = 400V See Fig. 8
Qgc Gate-to-Collector Charge (turn-on) — 19 28 VGE = 15V
td(on) Turn-On delay time — 42 — TJ = 25°C
trRise time — 26 — ns IC = 17A, VCC = 480V
td(off) Turn-Off delay time — 230 350 VGE = 15V, RG = 23Ω
tfFall time — 160 230 Energy losses inlcude "tail" and
Eon Turn-On Switching Loss — 0.63 — diode reverse recovery.
Eoff Turn-Off Switching Loss — 1.39 — mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss — 2.02 3.9
td(on) Turn-On delay time — 42 — TJ = 150°C See Fig. 9,10,11,18
trRise time — 27 — ns IC = 17A, VCC = 480V
td(off) Turn-Off delay time — 310 — VGE = 15V, RG = 23Ω
tfFall time — 310 — Energy losses inlcude "tail" and
Ets Total Switching Loss — 3.2 — mJ diode reverse recovery.
LEInternal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 1100 — VGE = 0V
Coes Output Capacitance — 74 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 14 — f = 1.0MHz
trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
—80120 TJ = 125°C 14
Irr Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig.
—5.610 TJ = 125°C 15
Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.
220 600 TJ = 125°C 16
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig.
During tb—120— TJ = 125°C 17
VR = 200V
di/dt 200A/µs
Conditions
Conditions
IF = 12A
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Same type
device as
D.U.T.
D.U.T.
430µF
80%
of Vce
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
Ic
Vce
t1 t2
90% Ic
10% Vce
td(off) tf
Ic
5% Ic
t1+5µS
Vce ic dt
90% Vge
+Vge
∫
Eoff =
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
∫
Vce ie dt
t2
t1
5% Vce
Ic
Ipk
Vcc 10% Ic
Vce
t1 t2
DUT VOLTAGE
AND CURRENT
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr
td(on)
DIODE REVERSE
RECOVERY ENERGY
tx
Eon =
∫
Erec =
t4
t3
Vd id dt
t4
t3
DIODE RECOVERY
WAVEFORMS
Ic
Vpk
10% Vcc
Irr
10% Irr
Vcc
trr
∫
Qrr =
trr
tx
id dt
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vd Ic dt
Vce Ic dt
Ic dt
Vce Ic dt
IRG4BC30FD-SPbF
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Vg GATE SIGNAL
DEVICE UNDER TES
T
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0 t1 t2
D.U.T.
V *
c
50V
L
1000V
6000µF
100V
Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current
Test Circuit
Fig.18e - Macro Waveforms for Figure 18a's Test Circuit
0 - VCC
RLICM
VCC
=
480µF
Pulsed Collector Current
Test Circuit
IRG4BC30FD-SPbF
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D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRG4BC30FD-SPbF
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Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20).
VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19).
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
When mounted on 1" square PCB (FR-4 or G-10 Material).
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/2010
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13. 50 (.532)
12. 80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.