2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor (also available in commercial version), designed for UHF equipment and other high-reliability applications. Common applications include low noise amplifier; oscillator, and mixer applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent to JEDEC registered 2N2857. * Silicon NPN, UB packaged UHF transistor. * Maximum unilateral gain = 13 dB (typ) @ 500 MHz. * JAN, JANTX, and JANTXV military qualified versions available per MIL-PRF-19500/343. * RoHS compliant version available (commercial grade only). UB Package Also available in: TO-72 Package (axial-leaded) 2N2857 APPLICATIONS / BENEFITS * * Low-power, ultra-high frequency transistor. Low-profile ceramic surface mount package. MAXIMUM RATINGS @ TA = +25 oC Parameters/Test Conditions Junction and Storage Temperature Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Solder Pad (1) Steady-State Power Dissipation Collector Current Symbol Value TJ and TSTG V CEO V CBO V EBO R JA R JSP PD IC -65 to +200 15 30 3 400 210 200 40 Notes: 1. Derate linearly 1.14 mW/C for T A > +25 C. Unit o C V V V o C/W o C/W mW mA MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0223-1, Rev. 1 (120178) (c)2011 Microsemi Corporation Page 1 of 5 2N2857UB MECHANICAL and PACKAGING * * * * * * CASE: Ceramic. TERMINALS: Gold plating over nickel underplate. RoHS compliant matte/tin available on commercial grade only. MARKING: Part number, date code, manufacturer's ID. TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities. WEIGHT: < 0.04 Grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N2857 UB (e3) Reliability Level JAN=JAN level JANTX=JAN level JANTXV=JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Surface Mount package JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol IC IB TA TC V CB V EB Collector current (dc). Base current (dc). Ambient or free air temperature. Case temperature. Collector to base voltage (dc). Emitter to base voltage (dc). T4-LDS-0223-1, Rev. 1 (120178) (c)2011 Microsemi Corporation Page 2 of 5 2N2857UB ELECTRICAL CHARACTERISTICS @ TC = +25 oC OFF CHARACTERISTICS Test Conditions Symbol Value Min. Typ. Max. Unit V (BR)CEO 15 - - V Collector to Emitter Cutoff Current (V CE = 16 V, Bias condition C) I CES - - 100 nA Emitter to Base Cutoff Current (V EB = 3 V, Bias condition D) I EBO - - 10 A Collector to Base Cutoff Current (V CB = 15 V, Bias condition D) I CBO - - 10 nA Unit Collector-Emitter Breakdown Voltage (I C = 3.0 mA, Bias condition D) ON CHARACTERISTICS Test Conditions Symbol Forward Current transfer ratio (I C = 3.0 mA, V CE = 1.0 V) h FE Value Min. Typ. Max. 30 - 150 Collector-Emitter Saturation Voltage (I C = 10 mA, I B = 1 mA) V CE(sat) - 0.4 V Base-Emitter Saturation Voltage (I C = 10 mA, I B = 1 mA) V BE(sat) - 1.0 V DYNAMIC CHARACTERISTICS Test Conditions Symbol Value Min. Typ. Max. Unit Magnitude of common emitter small signal short circuit forward current transfer ratio (V CE = 6 V, Ic = 5 mA, f = 100 MHz) |h fe | 10 - 21 Collector-base time constant (I E = 2.0 mA, V CB = 6.0 V, f = 31.9 MHz) r b 'C c 4 - 15 pF Collector to Base - feedback capacitance (I E = 0 mA, V CB = 10 V, 100 kHz < f < 1 MHz C cb 1.0 pF Noise Figure (50 Ohms) (I C = 1.5 mA, V CE = 6 V, f = 450 MHz, R g = 50 ) Small Signal Power Gain (common emitter) (I E = 1.5 mA, V CE = 6 V, f = 450 MHz T4-LDS-0223-1, Rev. 1 (120178) F G pe 4.5 12.5 (c)2011 Microsemi Corporation dB 21 dB Page 3 of 5 2N2857UB Theta (oCW) GRAPHS Time (sec) FIGURE 1 Maximum Thermal Impedance T4-LDS-0223-1, Rev. 1 (120178) (c)2011 Microsemi Corporation Page 4 of 5 2N2857UB PACKAGE DIMENSIONS Symbol BH BL BW CL CW LL1 LL2 inch Min .046 .115 .085 .022 .017 Dimensions millimeters Max Min Max .056 1.17 1.42 .128 2.92 3.25 .108 2.16 2.74 .128 3.25 .108 2.74 .038 0.56 0.97 .035 0.43 0.89 Note Symbol LS1 LS2 LW r r1 r2 inch Min .035 .071 0.16 Dimensions millimeters Max Min Max .039 0.89 1.02 .079 1.80 2.01 0.24 0.41 0.61 .008 0.20 .012 0.31 .022 .056 Note NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. T4-LDS-0223-1, Rev. 1 (120178) (c)2011 Microsemi Corporation Page 5 of 5