Rev.1.3
Seiko Instruments Inc. 1
S-801 Series
HIGH-PRECISION VOLTAGE DETECTOR WITH A
BUILT-IN DELAY CIRCUIT
The S-801 Ser ies is a high-precis ion voltage detector with a built-in delay
time generater of fixed time developed using CMOS process. The
detection voltage is fixed internally, with an accuracy of ±2.0%. Internal
oscillator and counter timer can delay the release signal for a fixed time
with no external attachment part. Three delay times, 50 ms typ., 100ms
typ., or 200 ms typ. are available. Two output types, Nch open-drain and
CMOS output, are available.
■Features ■Applications
•Ultra-low current consumption •Power monitor for portable equipment such as note type
1.3 µA typ. (at VDD=3.5 V) personal computers, digital cameras, PDA devices, and
•Hysteresis characteristics portable phone.
60 mV typ. •Constant voltage power monitor for cameras, video
•Three delay times equipment and communication devices.
A series : 50 ms typ. •Power monitor for microcomputers and reset for CPUs.
B series : 100 ms typ.
C series : 200 ms typ.
•High-precision detection voltage
±2.0%
•ON/OFF switch of delay time (DS pin)
•Operating voltage
0.95 to 10.0 V
•Detection voltage
2.2 to 6.0 V (0.1V step)
•Output
Nch open-drain active low or CMOS active low output
■Package
5 pin, SOT-23-5 (See PKG code, MP005-A)
■Block Diagram
(1) Nch open-drain active low output (2) CMOS active low output
5
24
1
4
DELAY CIRCUIT
DS
OUT
VREF
VSS
VDD
∗
OSCILLATOR
COUNTER
TIMER
5
2
1
4
DELAY CIRCUIT
DS
OUT
VREF
VSS
VDD
∗
∗
OSCILLATOR
COUNTER
TIMER
Figure 1 Block Diagram (Nch open-drain) Figure 2 Block Diagram (CMOS)
* Parasitic diode
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
S-801 Series Rev.1.3
2 Seiko Instruments Inc.
■Selection Guide
S-80122 A N MC - XXX - T2
Directions of the IC for taping specifications
Product name (abbreviation)
Package name (abbreviation)
MC:SOT-23-5
Output type
N:Nch open-drain (active low output)
L:CMOS (active low output)
Delay time
A:50 ms typ.
B:100 ms typ.
C:200 ms typ.
Detection voltage rank (Detection voltage x 10)
(e.g. “22” shows the detection voltage is 2.2V.)
Table 1 Selection Guide
SII will develop products marked with mesh in order, contact sales personnel for a sample. (1/3)
Detection voltage range Delay time Nch Open-Drain (Low) CMOS Output (Low)
50 ms typ. S-80122ANMC-JCH-T2 S-80122ALMC-JAH-T2
2.2 V ± 2.0% 100 ms typ. S-80122BNMC-JGH-T2 S-80122BLMC-JEH-T2
200 ms typ. S-80122CNMC-JKH-T2 S-80122CLMC-JIH-T2
50 ms typ. S-80123ANMC-JCI-T2 S-80123ALMC-JAI-T2
2.3 V ± 2.0% 100 ms typ. S-80123BNMC-JGI-T2 S-80123BLMC-JEI-T2
200 ms typ. S-80123CNMC-JKI-T2 S-80123CLMC-JII-T2
50 ms typ. S-80124ANMC-JCJ-T2 S-80124ALMC-JAJ-T2
2.4 V ± 2.0% 100 ms typ. S-80124BNMC-JGJ-T2 S-80124BLMC-JEJ-T2
200 ms typ. S-80124CNMC-JKJ-T2 S-80124CLMC-JIJ-T2
50 ms typ. S-80125ANMC-JCK-T2 S-80125ALMC-JAK-T2
2.5 V ± 2.0% 100 ms typ. S-80125BNMC-JGK-T2 S-80125BLMC-JEK-T2
200 ms typ. S-80125CNMC-JKK-T2 S-80125CLMC-JIK-T2
50 ms typ. S-80126ANMC-JCL-T2 S-80126ALMC-JAL-T2
2.6 V ± 2.0% 100 ms typ. S-80126BNMC-JGL-T2 S-80126BLMC-JEL-T2
200 ms typ. S-80126CNMC-JKL-T2 S-80126CLMC-JIL-T2
50 ms typ. S-80127ANMC-JCM-T2 S-80127ALMC-JAM-T2
2.7 V ± 2.0% 100 ms typ. S-80127BNMC-JGM-T2 S-80127BLMC-JEM-T2
200 ms typ. S-80127CNMC-JKM-T2 S-80127CLMC-JIM-T2
50 ms typ. S-80128ANMC-JCN-T2 S-80128ALMC-JAN-T2
2.8 V ± 2.0% 100 ms typ. S-80128BNMC-JGN-T2 S-80128BLMC-JEN-T2
200 ms typ. S-80128CNMC-JKN-T2 S-80128CLMC-JIN-T2
50 ms typ. S-80129ANMC-JCO-T2 S-80129ALMC-JAO-T2
2.9 V ± 2.0% 100 ms typ. S-80129BNMC-JGO-T2 S-80129BLMC-JEO-T2
200 ms typ. S-80129CNMC-JKO-T2 S-80129CLMC-JIO-T2
50 ms typ. S-80130ANMC-JCP-T2 S-80130ALMC-JAP-T2
3.0 V ± 2.0% 100 ms typ. S-80130BNMC-JGP-T2 S-80130BLMC-JEP-T2
200 ms typ. S-80130CNMC-JKP-T2 S-80130CLMC-JIP-T2
50 ms typ. S-80131ANMC-JCQ-T2 S-80131ALMC-JAQ-T2
3.1 V ± 2.0% 100 ms typ. S-80131BNMC-JGQ-T2 S-80131BLMC-JEQ-T2
200 ms typ. S-80131CNMC-JKQ-T2 S-80131CLMC-JIQ-T2
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
Rev.1.3 S-801 Series
Seiko Instruments Inc. 3
Table 1 Selection Guide
SII will develop products marked with mesh in order, contact sales personnel for a sample. (2/3)
Detection voltage range Delay time Nch Open-Drain (Low) CMOS Output (Low)
50 ms typ. S-80132ANMC-JCR-T2 S-80132ALMC-JAR-T2
3.2 V ± 2.0% 100 ms typ. S-80132BNMC-JGR-T2 S-80132BLMC-JER-T2
200 ms typ. S-80132CNMC-JKR-T2 S-80132CLMC-JIR-T2
50 ms typ. S-80133ANMC-JCS-T2 S-80133ALMC-JAS-T2
3.3 V ± 2.0% 100 ms typ. S-80133BNMC-JGS-T2 S-80133BLMC-JES-T2
200 ms typ. S-80133CNMC-JKS-T2 S-80133CLMC-JIS-T2
50 ms typ. S-80134ANMC-JCT-T2 S-80134ALMC-JAT-T2
3.4 V ± 2.0% 100 ms typ. S-80134BNMC-JGT-T2 S-80134BLMC-JET-T2
200 ms typ. S-80134CNMC-JKT-T2 S-80134CLMC-JIT-T2
50 ms typ. S-80135ANMC-JCU-T2 S-80135ALMC-JAU-T2
3.5 V ± 2.0% 100 ms typ. S-80135BNMC-JGU-T2 S-80135BLMC-JEU-T2
200 ms typ. S-80135CNMC-JKU-T2 S-80135CLMC-JIU-T2
50 ms typ. S-80136ANMC-JCV-T2 S-80136ALMC-JAV-T2
3.6 V ± 2.0% 100 ms typ. S-80136BNMC-JGV-T2 S-80136BLMC-JEV-T2
200 ms typ. S-80136CNMC-JKV-T2 S-80136CLMC-JIV-T2
50 ms typ. S-80137ANMC-JCW-T2 S-80137ALMC-JAW-T2
3.7 V ± 2.0% 100 ms typ. S-80137BNMC-JGW-T2 S-80137BLMC-JEW-T2
200 ms typ. S-80137CNMC-JKW-T2 S-80137CLMC-JIW-T2
50 ms typ. S-80138ANMC-JCX-T2 S-80138ALMC-JAX-T2
3.8 V ± 2.0% 100 ms typ. S-80138BNMC-JGX-T2 S-80138BLMC-JEX-T2
200 ms typ. S-80138CNMC-JKX-T2 S-80138CLMC-JIX-T2
50 ms typ. S-80139ANMC-JCY-T2 S-80139ALMC-JAY-T2
3.9 V ± 2.0% 100 ms typ. S-80139BNMC-JGY-T2 S-80139BLMC-JEY-T2
200 ms typ. S-80139CNMC-JKY-T2 S-80139CLMC-JIY-T2
50 ms typ. S-80140ANMC-JCZ-T2 S-80140ALMC-JAZ-T2
4.0 V ± 2.0% 100 ms typ. S-80140BNMC-JGZ-T2 S-80140BLMC-JEZ-T2
200 ms typ. S-80140CNMC-JKZ-T2 S-80140CLMC-JIZ-T2
50 ms typ. S-80141ANMC-JC2-T2 S-80141ALMC-JA2-T2
4.1 V ± 2.0% 100 ms typ. S-80141BNMC-JG2-T2 S-80141BLMC-JE2-T2
200 ms typ. S-80141CNMC-JK2-T2 S-80141CLMC-JI2-T2
50 ms typ. S-80142ANMC-JC3-T2 S-80142ALMC-JA3-T2
4.2 V ± 2.0% 100 ms typ. S-80142BNMC-JG3-T2 S-80142BLMC-JE3-T2
200 ms typ. S-80142CNMC-JK3-T2 S-80142CLMC-JI3-T2
50 ms typ. S-80143ANMC-JC4-T2 S-80143ALMC-JA4-T2
4.3 V ± 2.0% 100 ms typ. S-80143BNMC-JG4-T2 S-80143BLMC-JE4-T2
200 ms typ. S-80143CNMC-JK4-T2 S-80143CLMC-JI4-T2
50 ms typ. S-80144ANMC-JC5-T2 S-80144ALMC-JA5-T2
4.4 V ± 2.0% 100 ms typ. S-80144BNMC-JG5-T2 S-80144BLMC-JE5-T2
200 ms typ. S-80144CNMC-JK5-T2 S-80144CLMC-JI5-T2
50 ms typ. S-80145ANMC-JC6-T2 S-80145ALMC-JA6-T2
4.5 V ± 2.0% 100 ms typ. S-80145BNMC-JG6-T2 S-80145BLMC-JE6-T2
200 ms typ. S-80145CNMC-JK6-T2 S-80145CLMC-JI6-T2
50 ms typ. S-80146ANMC-JC7-T2 S-80146ALMC-JA7-T2
4.6 V ± 2.0% 100 ms typ. S-80146BNMC-JG7-T2 S-80146BLMC-JE7-T2
200 ms typ. S-80146CNMC-JK7-T2 S-80146CLMC-JI7-T2
50 ms typ. S-80147ANMC-JC8-T2 S-80147ALMC-JA8-T2
4.7 V ± 2.0% 100 ms typ. S-80147BNMC-JG8-T2 S-80147BLMC-JE8-T2
200 ms typ. S-80147CNMC-JK8-T2 S-80147CLMC-JI8-T2
50 ms typ. S-80148ANMC-JC9-T2 S-80148ALMC-JA9-T2
4.8 V ± 2.0% 100 ms typ. S-80148BNMC-JG9-T2 S-80148BLMC-JE9-T2
200 ms typ. S-80148CNMC-JK9-T2 S-80148CLMC-JI9-T2
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
S-801 Series Rev.1.3
4 Seiko Instruments Inc.
Table 1 Selection Guide
SII will develop products marked with mesh in order, contact sales personnel for a sample. (3/3)
Detection voltage range Delay time Nch Open-Drain (Low) CMOS Output (Low)
50 ms typ. S-80149ANMC-JDA-T2 S-80149ALMC-JBA-T2
4.9 V ± 2.0% 100 ms typ. S-80149BNMC-JHA-T2 S-80149BLMC-JFA-T2
200 ms typ. S-80149CNMC-JLA-T2 S-80149CLMC-JJA-T2
50 ms typ. S-80150ANMC-JDB-T2 S-80150ALMC-JBB-T2
5.0 V ± 2.0% 100 ms typ. S-80150BNMC-JHB-T2 S-80150BLMC-JFB-T2
200 ms typ. S-80150CNMC-JLB-T2 S-80150CLMC-JJB-T2
50 ms typ. S-80151ANMC-JDC-T2 S-80151ALMC-JBC-T2
5.1 V ± 2.0% 100 ms typ. S-80151BNMC-JHC-T2 S-80151BLMC-JFC-T2
200 ms typ. S-80151CNMC-JLC-T2 S-80151CLMC-JJC-T2
50 ms typ. S-80152ANMC-JDD-T2 S-80152ALMC-JBD-T2
5.2 V ± 2.0% 100 ms typ. S-80152BNMC-JHD-T2 S-80152BLMC-JFD-T2
200 ms typ. S-80152CNMC-JLD-T2 S-80152CLMC-JJD-T2
50 ms typ. S-80153ANMC-JDE-T2 S-80153ALMC-JBE-T2
5.3 V ± 2.0% 100 ms typ. S-80153BNMC-JHE-T2 S-80153BLMC-JFE-T2
200 ms typ. S-80153CNMC-JLE-T2 S-80153CLMC-JJE-T2
50 ms typ. S-80154ANMC-JDF-T2 S-80154ALMC-JBF-T2
5.4 V ± 2.0% 100 ms typ. S-80154BNMC-JHF-T2 S-80154BLMC-JFF-T2
200 ms typ. S-80154CNMC-JLF-T2 S-80154CLMC-JJF-T2
50 ms typ. S-80155ANMC-JDG-T2 S-80155ALMC-JBG-T2
5.5 V ± 2.0% 100 ms typ. S-80155BNMC-JHG-T2 S-80155BLMC-JFG-T2
200 ms typ. S-80155CNMC-JLG-T2 S-80155CLMC-JJG-T2
50 ms typ. S-80156ANMC-JDH-T2 S-80156ALMC-JBH-T2
5.6 V ± 2.0% 100 ms typ. S-80156BNMC-JHH-T2 S-80156BLMC-JFH-T2
200 ms typ. S-80156CNMC-JLH-T2 S-80156CLMC-JJH-T2
50 ms typ. S-80157ANMC-JDI-T2 S-80157ALMC-JBI-T2
5.7 V ± 2.0% 100 ms typ. S-80157BNMC-JHI-T2 S-80157BLMC-JFI-T2
200 ms typ. S-80157CNMC-JLI-T2 S-80157CLMC-JJI-T2
50 ms typ. S-80158ANMC-JDJ-T2 S-80158ALMC-JBJ-T2
5.8 V ± 2.0% 100 ms typ. S-80158BNMC-JHJ-T2 S-80158BLMC-JFJ-T2
200 ms typ. S-80158CNMC-JLJ-T2 S-80158CLMC-JJJ-T2
50 ms typ. S-80159ANMC-JDK-T2 S-80159ALMC-JBK-T2
5.9 V ± 2.0% 100 ms typ. S-80159BNMC-JHK-T2 S-80159BLMC-JFK-T2
200 ms typ. S-80159CNMC-JLK-T2 S-80159CLMC-JJK-T2
50 ms typ. S-80160ANMC-JDL-T2 S-80160ALMC-JBL-T2
6.0 V ± 2.0% 100 ms typ. S-80160BNMC-JHL-T2 S-80160BLMC-JFL-T2
200 ms typ. S-80160CNMC-JLL-T2 S-80160CLMC-JJL-T2
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
Rev.1.3 S-801 Series
Seiko Instruments Inc. 5
■Pin Configuration
See the end of the book for details of the package.
Table 2 Pin Description
Figure 3 Pin Configuration
■Absolute Maximum Ratings
Table 3 Absolute Maximum Ratings
(Unless otherwise specified: Ta=25°C)
Parameter Symbol Ratings Units
Power supply voltage VDD−VSS 12 V
Output
voltage Nch
open-drain VOUT VSS-0.3 to 12 V
CMOS VSS-0.3 to VDD+0.3 V
Output current IOUT 50 mA
Power dissipation Pd150 mW
Operating temperature Topr −40 to +85 °C
Storage temperature Tstg −40 to +125 °C
Note: This IC has a built-in protection circuit for static electricity, however, prevent
contact with a large static electricity or electrostatic voltage which exceeds the
performance of the protection circuit.
321
4
5No. Symbol Description
1 DS (*1) ON/OFF switch of delay time pin
2 VSS Ground pin
3 NC (*2) non-connection
4 OUT Voltage detection output pin
5 VDD Voltage input pin
SOT-23-5
Top view
(*1) See “2 Delay Circuit (Page 10)” for operation.
(*2) NC means open electrically.
Connecting pin No.3 to VDD or VSS has no problem.
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
S-801 Series Rev.1.3
6 Seiko Instruments Inc.
■Electrical Characteristics
Table 4 Erectrical Characteristics
(Unless otherwise specified: Ta=25 °C)
Parameter Symbol Conditions Min. Typ. Max. Units Test
circuit
Detection voltage −VDET —−VDET ×
0.98 −VDET −VDET ×
1.02 V1
Hysteresis width VHYS — 30 60 100 mV 1
Operating voltage VDD — 0.95 — 10.0 V 1
Nch VDD=1.2V
S-80122 to 60 0.75 1.5 —
VOUT=0.5V VDD=2.4V
S-80127 to 60 3.0 6.0 —
Output current of
output transistor IOUT Pch(only for CMOS VDD=4.8V
S-80122 to 39 1.0 2.0 — mA 2
output products)
VDD-VOUT=0.5V VDD=6.0V
S-80140 to 54 1.25 2.5 —
VDD=8.4V
S-80155 to 60 1.5 3.0 —
Leakage current of
output transistor ILEAK
Nch (only for Nch open-drein output
procudts)
VDD=10.0V
VOUT=10.0V
— — 0.1 µA2
Temperature
coefficient of detection
voltage ∗1)
∆−VDET
∆Ta • −VDET Ta=−40°C to +85°C — ±120 ±360 ppm/
°C 1
VDD=−VDET+1V S-801XXAX 32.5 50 72.5
Delay time 1 td 1 DS pin : “L” S-801XXBX 65 100 145 ms 1
S-801XXCX 130 200 290
Delay time 2 td 2 VDD=−VDET+1V, DS pin “H” 110 220 330 µs3
V
DD=3.5V S-80122 to 26 — 1.3 3.3
Current consumption ISS VDD=4.5V S-80127 to 39 — 1.5 3.5 µA1
V
DD=6.5V S-80140 to 60 — 1.8 4.0
Input voltage of VSH VDD=6.0V 1.0 — — V 4
DS pin VSL VDD=6.0V — — 0.3 V 4
*1) The detection voltage change for temperature change (mV/°C) is calculated with the following formula:
[]
()
[] []
∆
∆
∆
∆
−°=− × −
−°÷
•
V
Ta mV/ C V Typ. V V
Ta V ppm/ C 1000
DET DET DET
DET
Temperature coefficient of
detection voltage
Detection voltage
Detection voltage change
for temperature change
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
Rev.1.3 S-801 Series
Seiko Instruments Inc. 7
■Test Circuits
DS VDD
OUT
VSS
R*
100kΩ
A
V
DS VDD
OUT
VSS
R*
100kΩ
V
A
DS VDD
OUT
VSS
DS
VDD
OUT
VSS
R*
100kΩ
A
V
* R is unnecessary for CMOS out put
dt
4.
3.
2.1.
Figure 4 Test Circuits
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
S-801 Series Rev.1.3
8 Seiko Instruments Inc.
■ Technical Terms
1. Detection voltage (-VDET)
The detection voltage ( - VDET) is the voltage at which the output s witches to low. This detec tion voltage
varies slightly among products of the same type. The variation of voltages between the specified
minimum [(-VDET)min.] and maximum [(-VDET)max.] values is called the detection voltage range (See
Figure 5).
Example : For the S-80122AN, detection voltage lies in the range of 2.156 ≤ (-VDET) ≤ 2.244.
This means that -VDET is 2.156 in a produc t while -VDET is 2.244 in another of the sam e S-
80122AN.
2. Release voltage (+VDET)
The release voltage (+VDET) is the voltage at which the output returns (is “released”) to high. This
release voltage varies slightly among products of the same type. The variation of voltages between
the specified minimum [(+VDET)min.] and maximum [(+VDET)max.] values is called the release voltage
range (See Figure 6).
Example : For the S-80122AN, the release voltage lies in the range of 2.186 ≤ (+VDET) ≤ 2.344.
This means that +VDET is 2.186 in a product while +VDET is 2.344 in another of the sam e S-
80122AN.
Remark: Although the detection voltage and release voltage overlap in the range of 2.186 V to
2.244 V, +VDET will always be larger than -VDET.
VDD
OUT
(-VDET)Max.
(-VDET)Min. Det ec tion voltage range
Detect i on vol tage
Figure 5 Detection Voltage
(+VDET)Max.
(+VDET)Min. Release voltage range
VDD
Release volt age
Delay time
OUT
Figure 6 Release Voltage
3. Hysteresis width (VHYS)
The hysteresis width is the voltage difference between the detection voltage and the release voltage
(B-A=VHYS in Figure 11). By giving a device hysteresis, trouble such as noise at the input is avoided.
4. Delay time (td)
The delay time is a time that the input voltage to
VDD pin exceeds the release voltage (+VDET) and
then the output of the OUT pin inverts. T he delay
time is fixed according to a series.
• S-801XXAX series: typ.50 ms
• S-801XXBX series: typ.100 ms
• S-801XXCX series: typ.200 ms
The output of the OUT pin can be inverted in a
short deley time by inputting “H” to DS pin. Figure 7 Delay Time
td2
td1
VDD
at DS = ”H” OUT
V
+VDET
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
Rev.1.3 S-801 Series
Seiko Instruments Inc. 9
5. Through-type current
Through-type current refers to the current which flows instantaneously at the time of detection and
release of a voltage detector. Through-type current flows in a frequency of 20 kHz for release delay
time because internal logic circuit operates.
6. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 10), in the CMOS
active low products f or ex ample, the through-type current generated when the output goes f r om low to
high (release) causes a voltage drop equal to [through-type current] × [input resistance] across the
resistor . W hen the res ultant input voltage drops below the detection voltage -VDET, the output voltage
returns to its low level. In this state, the through-type current and its resultant voltage drop have
disappeared, and the output goes bac k fr om low to high. A through-type current is again gener ated, a
voltage drop appears, and the process repeats. This unstable condition is referred to as oscillation.
Misimplementation with input voltage divider
OUT
VSS
VDD
RB
RA
VIN S-801
Figure 8 Misimplementation with Input Voltage Divider
■ Standard Circuit
DS
VDD
OUT
* R is unnecessary for CMOS output pr oduct s.
VSS
R∗
100kΩ
Figure 9 Standard Circuit
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
S-801 Series Rev.1.3
10 Seiko Instruments Inc.
■ Operation
1. Basic operation : CMOS active low output
(1) When power supply voltage VDD is greater than the release voltage +V DET, the Nch tr ansistor is O FF
and the Pch transis tor O N, c aus ing VDD (high) to appear at the output. With the Nch trans is tor N1 of
Figure 10 OFF, the comparator input voltage is (RB+RC)/(RA+RB+RC)×VDD.
(2) When power supply voltage VDD goes below +VDET, the output maintains the power supply voltage
level, as long as VDD rem ains above the detection voltage - VDET. When VDD does fa ll below -VDET (A
in Figure 11), the Nch transistor goes ON, the Pch transistor goes OFF, and VSS appears at the
output. With the Nch transistor N 1 of Figure 10 ON, the comparator input voltage is
RB/(RA+RB)×VDD.
(3) When VDD falls below the minimum operating voltage, the output becomes undefined. However,
output will revert to VDD if a pull-up has been employed.
(4) VSS will again be output when VDD rises above the minimum operating voltage. VSS will continue to
be output even when VDD surpasses -VDET, as long as it does not exceed the release voltage +VDET.
(5) When VDD rises above +VDET (B in Figure 11), the Nch tr ansistor goes O FF, the Pch trans istor goes
ON, and VDD appears at the output. Then VDD at the OUT pin appears with delay time(td) due to
delay circuit.
ABVDD
VSS
Release voltage (+VDET)
Detection voltage (-VDET)
Min. operating voltage
OUT pin output
Hysteresis
width (VHYS)
VDD
VSS
(1) (2) (3) (5)(4)
+
VREF
*
DELAY
CIRCUIT
DS
OUT
*
VDD
RA
−
RB
RC N1
Pch
Nch
VSS
* Parasitic diode td
Figure 10 Operation 1 Figure 11 Operation 2
2. Delay circuit
(1) Dalay time
The delay circuit outputs the signal delayed from the release voltage (+VDET) point of the power
voltage VDD rising. The output signal is not delayed when the VDD goes down the detection voltage
(-VDET) or less. (See Figure 11).
The delay time (td) is a fixed value that is determined by a built-in oscillator circuit and counter.
(2) DS pin: ON/OFF switch of delay time
Always connect DS pin to “L” or “H”. W hen DS pin is in “H”, a delay time of output becom es short
because the output signal is output in the middle of count. (See “Delay time 2” in Table 4.)
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
Rev.1.3 S-801 Series
Seiko Instruments Inc. 11
3. Other characteristics
(1) Temperature characteristic of detection voltage
The temperature characteristics of the detection voltage are expressed by the oblique line parts in
Figure 12.
S-80122XXMC:
Figure 12 Temperature Characteristics of Detection Voltage
(2) Temperature characteristics of release voltage
The temperature factor ∆∆
+
V
TaDET of the release voltage is calculated by the temperature factor
∆∆
−
V
Ta
DET of the detection voltage as follows:
∆∆∆∆
+=+
−×−
V
Ta V
VV
Ta
DET DET
DET
DET
The temperature factor of the release voltage has a same sign characteristics as the temperature
factor of the detection voltage.
(3) Temperature characteristics of hysteresis voltage
The temperature characteristics of hysteresis voltage ∆∆∆∆
+−−
V
Ta V
Ta
DET DET is calculated as follows:
∆∆∆∆∆∆
+−−=−×−
V
Ta V
Ta V
VV
Ta
DET DET HYS
DET
DET
■ Notes
x
In CMOS output products of the S-801 Series, thr ough type current flows when the device is detecting or
releasing. If a high im pedance is c onnected to the input, osc illation m ay be caused due to the f all of the
voltage by the through type current during releasing.
x
In S-801 series products, through-type current flows in a frequency of approx. 20 kHz for a delay time
because internal oscillator circuit and counter timer operate at voltage release. High impeadance of
input by connecting a resistor may cause an oscillation by through-type current. W hen impeadance of
input is high, insert a capacitor between VDD and VSS pins to prevent an oscillation.
x
When designing for mass production using an application circuit described herein, take the product
deviation and temperature characteristic into consideration.
x
Seiko Instruments Inc. shall not bear any responsibility for the patents on the circuits described herein.
−40 25
+0.792mV/°C
−VDET
[V]
2.200
85 Ta[°C]
-0.792mV/°C
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
S-801 Series Rev.1.3
12 Seiko Instruments Inc.
■ Characteristics (typical characteristics)
(1) Detection voltage (VDET) - Temperature (Ta)
S-80122AL
2.1
2.2
2.3
2.4
-40 -20 0 20 40 60 80 100
Ta(°C)
VDET(V)
VDET(+)
VDET(-)
S-80160AL
5.8
6.0
6.2
6.4
-40 -20 0 20 40 60 80 100
Ta(°C)
(V)
VDET
VDET
(+)
(-)VDET
(2) Hysteresis voltage width (Vhys) - Temperature (Ta)
S-80122AL
30
40
50
60
70
80
90
100
-40-20 0 20 40 60 80100
Ta(°C)
Vhys(mV)
S-80160AL
30
40
50
60
70
80
90
100
-40-20 0 20 40 60 80100
Ta(°C)
Vhys(mV)
(3) Current consumption (ISS) - Input voltage (VDD)
(a) S-80122AL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0246810
V
DD(V)
ISS(
µ
A)
Ta=25°C
2.9µA
(b) S-80129AL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0246810
V
DD(V)
ISS(
µ
A)
Ta=25°C
3.3µA
(c) S-80130AL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0246810
V
DD(V)
ISS(
µ
A)
Ta=25°C
5.0µA
(d) S-80160AL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0246810
V
DD(V)
ISS(
µ
A)
Ta=25°C
20µA
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
Rev.1.3 S-801 Series
Seiko Instruments Inc. 13
(4) Current consumption (ISS) - Temperature (Ta)
(a) S-80122AL
0.0
1.0
2.0
3.0
4.0
5.0
-40 -20 0 20 40 60 80 100
Ta(°C)
ISS(
µ
A)
VDD=3.5V
(b) S-80129AL
0.0
1.0
2.0
3.0
4.0
5.0
-40 -20 0 20 40 60 80 100
Ta(°C)
ISS(
µ
A)
VDD=4.5V
(c) S-80130AL
0.0
1.0
2.0
3.0
4.0
5.0
-40 -20 0 20 40 60 80 100
Ta(°C)
ISS(
µ
A)
VDD=4.5V
(d) S-80160AL
0.0
1.0
2.0
3.0
4.0
5.0
-40 -20 0 20 40 60 80 100
Ta(°C)
ISS(
µ
A)
VDD=6.5V
(5) Nch transistor output current (IOUT) - VOUT (6) Pch transistor output current (IOUT) - (VDD-VOUT)
S-80160AL
0
10
20
30
40
50
60
70
0246810
V
OUT(V)
I(mA)
Ta=25°C
V
$$
=1V, 1. 2V
2V
2.4V
4V
5.5V
S-80122AL
0
10
20
30
40
0246810
V
DD-VOUT(V)
I(mA)
Ta=25°C
V
$$
=4V 4.8V 6V
6.5V
10V
8V
(7) Nch transistor output current (IOUT) (8) Pch transistor output current(IOUT)
- Input voltage(VDD) - Input voltage(VDD)
S-80160AL
0
5
10
15
20
25
0246810
V
DD(V)
I (mA)
VDS =0.5V
Ta=-40°C
85°C
25°C
IOUT
S-80122AL
0
1
2
3
4
5
0246810
V
DD(V)
I (mA)
VDS =0.5V
Ta=-40°C
85°C
25°C
IOUT
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
S-801 Series Rev.1.3
14 Seiko Instruments Inc.
(9) Minimum operating voltage - Input voltage(VDD)
S-80122AN
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.5 1 1.5
VDD(V)
V (V)
PULL_UP VDD:100kΩ
85°C
25°C
Ta=-40°C
VOUT
(10) Threshold voltage of DS pin - Temperature (Ta) (11) Threshold voltage of DS pin - Input voltage (VDD)
S-80122AL
0
0.2
0.4
0.6
0.8
1
-40 -20 0 20 40 60 80 100
Ta(°C)
threshold(V)
VDD =6.0V
S-80122AL
0
0.2
0.4
0.6
0.8
1
0246810
V
DD(V)
threshold(V)
Ta=-40°C
25°C 85°C
(12) Delay time 1 - Temperature (Ta)
S-80122CL
0
50
100
150
200
250
300
-40-200 20406080100
Ta(°C)
Delay time (msec)
VDD =3.2V
S-80160CL
0
50
100
150
200
250
300
-40-200 20406080100
Ta(°C)
Delay time(msec)
VDD=7.0V
(13) Delay time 1 - Input voltage (VDD)
S-80122CL
0
50
100
150
200
250
300
246810
V
DD(V)
Delay time(msec)
Ta= 25°C
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
Rev.1.3 S-801 Series
Seiko Instruments Inc. 15
(14) Delay time 2 - Temperature (Ta)
S-80122AL
0
50
100
150
200
250
300
350
400
-40 -20 0 20 40 60 80 100
Ta(°C)
Delay time (µsec)
VDD=3.2V
S-80160AL
0
50
100
150
200
250
300
350
400
-40 -20 0 20 40 60 80 100
Ta(°C)
Delay time (µsec)
VDD=7.0V
(15) Delay time 2 - Input voltage (VDD)
S-80122AN
0
50
100
150
200
250
300
350
400
246810
V
DD(V)
Delay time (µsec)
Ta=25°C
VDD×90 %
VSS
VIH
VIL td
1
µ
sec
VIH=10V, VIL=0. 95V
INPUT VOLTAGE
OUTPUT VOL TAGE
VDD
OUT
VSS
DS
VDD
S-801
Series
V
V
R*
100kΩ
Set DS pin to VDD or VSS voltage
* R is not neces sar
y
for CMOS output products.
Figure 13 Measuring Conditions of Delay Time Figure 14 Measuring Circuit of Delay Time
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
S-801 Series Rev.1.3
16 Seiko Instruments Inc.
(16) Response time - Load capacitor (COUT)
S-80122AL
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
COUT(
µ
F)
Response time(msec)
Ta=25°C
tpLH
(Delay time 2)
tpHL
S-80122AN
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1
Response time (msec)
Ta=25°C
tpLH
tpHL
(Delay time 2)
COUT(
µ
F)
S-80160AL
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Response time(msec)
Ta=25°C
tpLH
tpHL
(Delay time 2)
COUT(
µ
F)
S-80160AN
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1
Response time (msec)
Ta=25°C
tpLH
tpHL
(Delay time 2)
COUT(
µ
F)
VDD × 90 %
VDD × 10 %
VIH
INPUT VOLTAGE
OUTPUT VOLTAGE
VIL
VDD
tPHL tPLH
VIH=10V, VIL=0.95V
1µsec
1
µ
sec
Figure 15 Measuring Conditions of Response Time Figure 16 Measuring Circuit of Delay Time
VDD OUT
DS
VSS
VDD
S-801
Series
V
V
R∗
100kΩ
* R is not necessary f or CMOS output products.
HIGH-PRECISION VOLTAGE DETECTOR WITH A BUILT-IN DELAY CIRCUIT
Rev.1.3 S-801 Series
Seiko Instruments Inc. 17
■Application Circuit Examples
1. Microcomputer reset circuits
With the S-801 Series which has a low operating voltage, a high-precision detection voltage,
hysteres is character ist ic, and a built-in delay circ uit, the reset circ uits s hown in Figures 17 to 18 can be
easily constructed.
VSS
VSS
VDD
Micro-computer
S-
801XXAL
(Nch open-drain output products only)
VDD1 VDD2
Micro-computer
S-
801XXAN
Figure 17 Reset Circuit (S-801XXAL) Figure 18 Reset Circuit (S-801XXAN)
21±0.5
2±0.2
(60°)
(60°)
ø13±0.2
12.5max.
9.0±0.3
Winding core
ø60+1
-0
ø180+0
-3
3000 pcs./reel
3.25±0.15
ø1.5 +0.1
-0
ø1.0 +0.1
-0 4.0±0.1
2.0±0.05 0.27±0.05
1.4±0.2
T2
Feed direction
3°max.
3°max.
4.0±0.1 (10 pitches:40.0±0.2)
1.75±0.1
8.0±0.2
3.5±0.05
3.25±0.15
No.:MP005-A-C-SD-1.0
n SOT-23-5 MP005-A 991105
0.95±0.1
2.9±0.2
+0.1
-0.06
0.16
1.9±0.2
0.4±0.1
12
3
4
5
2.8+0.2
-0.3
1.6
1.1±0.1
0.45
1.3max
No.:MP005-A-P-SD-1.0
No.:MP005-A-R-SD-1.0
lTaping Specifications lReel Specifications
lDimensions Unit mm
•
The information described herein is subject to change without notice.
• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
• When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
• Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
• The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus
installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.
• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
