Fea tures
•Wide irradiance pattern
•Selected to specific on-line intensity
ranges
•Low cost, miniature plastic side-
looking package
•Mechanically and spectrally matched
to the OP550 series of
phototransistors and the OP560 series
of photodarlingtons
De scrip tion
The OP140 series devices are 935nm
high intensity gallium arsenide infrared
emitting diodes molded in IR
transmissive plastic side-looking
packages. The side looking packages
are for use in PC board mounted slotted
switches or as an easy mount PC board
interrupter.
Re places
OP140SL series
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Re verse Volt age ................................................. 2.0 V
Con tinu ous For ward Cur rent....................................... 50 mA
Peak For ward Cur rent (1 µs pulse width, 300 pps) ....................... 3.0 A
Stor age and Op er at ing Tem pera ture Range ..................-40o C to +100o C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] ........................................................ 260o C(1)
Power Dis si pa tion ............................................ 100 mW(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
A max. of 20 grams force may be applied to the leads when soldering.
(2) Derate linearly 1.33 mW/o C above 25o C.
(3) Ee(APT) is a measurement of the average apertured radiant incidence upon a sensing area
0.180" (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the
lens and 0.653" (16.6 mm) from the lens tip. Ee(APT) is not necessarily uniform within the
measured area.
Prod uct Bul le tin OP140A
May 1996
GaAs Plas tic In fra red Emit ting Di odes
Types OP140A, OP140B, OP140C, OP140D
2-10
Types OP140A, OP140B, OP140C, OP140D
Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted)
SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS
Ee(APT)
Apertured Radiant Incidence OP140D
OP140C
OP140B
OP140A
0.10
0.20
0.30
0.40
0.40
0.55
mW/cm2
mW/cm2
mW/cm2
mW/cm2
IF = 20 mA(3)
IF = 20 mA(3)
IF = 20 mA(3)
IF = 20 mA(3)
VFForward Voltage 1.60 VIF = 20 mA
IRReverse Current 100 µAVR = 2.0 V
λpWavelength at Peak Emission 935 nm IF = 10 mA
BSpectral Bandwidth Between Half Power Points 50 nm IF = 10 mA
∆λP/∆TSpectral Shift with Temperature +0.30 nm/oCIF = Constant
θHP Emission Angle at Half Power Points 40 Deg. IF = 20 mA
trOutput Rise Time 1000 ns IF(PK) = 100 mA,
PW = 10 µs, D.C. = 10%
tfOutput Fall Time 500 ns
2-11
