A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP10A17G 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25C 350m @ VGS= -10V -2.4 450m @ VGS= -6.0V -2.1 -100V * Fast switching speed * Low gate drive * Low input capacitance * Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * Motor control * DC-DC Converters * Power management functions * Uninterrupted power supply * Case: SOT223 * Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 * Moisture Sensitivity: Level 1 per J-STD-020 * Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 * Weight: 0.112 grams (approximate) SOT223 D G S Pin Out - Top View Top View Equivalent Circuit Ordering Information Product ZXMP10A17GTA Marking See below Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 Marking Information ZXMP 10A17 ZXMP10A17G Document Number DS32022 Rev. 2 - 2 ZXMP = Product Type Marking Code, Line 1 10A17 = Product Type Marking Code, Line 2 1 of 8 www.diodes.com November 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP10A17G Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current VGS = 10V Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode) (Note 2) TA = 70C (Note 2) (Note 1) (Note 3) (Note 2) (Note3 ) ID IDM IS ISM Value -100 20 -2.4 -1.9 -1.7 -9.4 -4.5 -9.4 Unit V V Value 2.0 16 3.9 31 62.5 32.0 9.8 -55 to 150 Unit A A A A Thermal Characteristics @TA = 25C unless otherwise specified Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range Notes: Symbol (Note 1) PD (Note 2) (Note 1) (Note 2) (Note 4) RJA RJL TJ, TSTG W mW/C C/W C 1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 2. Same as note (1), except the device is measured at t 10 sec. 3. Same as note (1), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 4. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMP10A17G Document Number DS32022 Rev. 2 - 2 2 of 8 www.diodes.com November 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated -ID Drain Current (A) 10 RDS(on) Limited 1 DC 1s 100ms 100m 10ms Single Pulse T amb=25C 10m 1 1ms 100s 10 100 Max Power Dissipation (W) Thermal Characteristics 2.0 1.6 1.2 0.8 0.4 0.0 0 20 -VDS Drain-Source Voltage (V) 40 60 80 100 120 140 160 Temperature (C) Derating Curve Safe Operating Area 70 Tamb=25C 60 Maximum Power (W) Thermal Resistance (C/W) ADVANCE INFORMATION ZXMP10A17G 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 Single Pulse T amb=25C 100 10 D=0.1 0 100 1m 10m 100m 1 10 100 1k 1 100 Pulse Width (s) Document Number DS32022 Rev. 2 - 2 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ZXMP10A17G 1m Pulse Power Dissipation 3 of 8 www.diodes.com November 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP10A17G Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -100 V ID = -250A, VGS = 0V Zero Gate Voltage Drain Current IDSS -0.5 A VDS = -100V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V VGS(th) -2.0 -4.0 V ID = -250A, VDS = VGS ON CHARACTERISTICS Gate Threshold Voltage VGS = -10V, ID = -1.4A RDS (ON) Forward Transconductance (Notes 5 & 6) gfs 2.8 S VDS = -15V, ID = -1.4A Diode Forward Voltage (Note 5) VSD -0.85 -0.95 V IS = -1.7A, VGS = 0V Reverse recovery time (Note 6) trr 33 ns Reverse recovery charge (Note 6) Qrr 48 nC Input Capacitance Ciss 424 pF Output Capacitance Coss 36.6 pF Reverse Transfer Capacitance Crss 29.8 pF Total Gate Charge (Note 7) Qg 7.1 nC Total Gate Charge (Note 7) Qg 10.7 nC Gate-Source Charge (Note 7) Qgs 1.7 nC Gate-Drain Charge (Note 7) Qgd 3.8 nC Turn-On Delay Time (Note 7) tD(on) 3.0 ns Turn-On Rise Time (Note 7) tr 3.5 ns Turn-Off Delay Time (Note 7) tD(off) 13.4 ns tf 7.2 ns Static Drain-Source On-Resistance (Note 5) 0.350 0.450 VGS = -6V, ID = -1.2A IS = -1.5A, di/dt = 100A/s DYNAMIC CHARACTERISTICS (Note 6) Turn-Off Fall Time (Note 7) Notes: VDS = -50V, VGS = 0V f = 1MHz VGS = -6.0V VGS = -10V VDS = -50V ID = -1.4A VDD = -50V, VGS = -10V ID = -1A, RG 6.0 5. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 6. For design aid only, not subject to production testing. 7. Switching characteristics are independent of operating junction temperatures. ZXMP10A17G Document Number DS32022 Rev. 2 - 2 4 of 8 www.diodes.com November 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated 10 10V T = 25C 7V 10 -ID Drain Current (A) -ID Drain Current (A) Typical Characteristics 5V 1 4.5V 4V 0.1 10V T = 150C 7V 5V 4.5V 4V 1 3.5V 0.1 3V 0.01 -VGS 0.01 -VGS 1E-3 0.1 1 10 0.1 1 10 -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics T = 150C T = 25C 0.1 -VDS = 10V 0.01 3 4 5 VGS = -10V 1.8 ID = - 1.4A 1.6 RDS(on) 1.4 1.2 1.0 VGS(th) 0.8 VGS = VDS 0.6 ID = -250uA -50 0 50 100 -VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics Normalised Curves v Temperature 100 -VGS 4V T = 25C 4.5V 10 5V 1 7V 10V 0.01 0.1 1 10 -ID Drain Current (A) On-Resistance v Drain Current ZXMP10A17G Document Number DS32022 Rev. 2 - 2 -ISD Reverse Drain Current (A) -ID Drain Current (A) 1 Normalised RDS(on) and VGS(th) 2.0 RDS(on) Drain-Source On-Resistance () ADVANCE INFORMATION ZXMP10A17G 150 10 T = 150C 1 T = 25C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com November 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated Typical Characteristics - continued VGS = 0V f = 1MHz 500 CISS 400 300 COSS 200 100 CRSS 0 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage -VGS Gate-Source Voltage (V) 10 600 C Capacitance (pF) ADVANCE INFORMATION ZXMP10A17G 8 6 4 VDS = -50V 2 ID = -1.4A 0 0 2 4 6 8 10 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS tr td(of ) t(on) tr td(on) t(on) Switching time waveforms ZXMP10A17G Document Number DS32022 Rev. 2 - 2 Pulse width 1S Duty factor 0.1% Switching time test circuit 6 of 8 www.diodes.com November 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP10A17G Package Outline Dimensions DIM A A1 A2 b b2 C Millimeters Min Max 1.80 0.02 0.10 1.55 1.65 0.66 0.84 2.90 3.10 0.23 0.33 Inches Min Max 0.071 0.0008 0.004 0.0610 0.0649 0.026 0.033 0.114 0.122 0.009 0.013 DIM D e e1 E E1 L Millimeters Min Max 6.30 6.70 2.30 BSC 4.60 BSC 6.70 7.30 3.30 3.70 0.90 - Inches Min Max 0.248 0.264 0.0905 BSC 0.181 BSC 0.264 0.287 0.130 0.146 0.355 - Suggested Pad Layout 3.8 0.15 2.0 0.079 6.3 0.248 2.0 0.079 1.5 0.059 ZXMP10A17G Document Number DS32022 Rev. 2 - 2 2.3 0.091 7 of 8 www.diodes.com mm inches November 2009 (c) Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMP10A17G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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