BAS40T, BAS40-04T thru -06T
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
REVERSE VOLTAGE – 40 Volts
FORWARD CURRENT – 0.2 Ampere
FEATURES
Extremely Fast Switching Speed
Low Forward Voltage
Very Small Conduction Losses
MECHANICAL DATA
Case: SOT-523 Plastic
Case Material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Moisture Sensitivity: Level 1 per J-STD-020D
Lead Free in RoHS 2002/95/EC Compliant
SOT-523
SOT-523
Dim. Min. Max.
A 0.70 0.90
A1 0.00 0.10
b 0.25 0.325
c 0.10
0.20
D 1.50 1.70
E 1.45 1.75
E1 0.75 0.85
e 0.50 Typ.
e1 0.90 1.10
L 0.55 Ref.
Dimensions in millimeter
Maximum Ratings & Thermal Characteristics
@ T
A
= 25 unless otherwise specified
Characteristic Symbol
BAS40T
BAS40
-04T
BAS40
-05T
BAS40
-06T
Units
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 V
Forward Continuous Current I
FM
200 mA
Forward Surge Current @t<1.0s I
FSM
600 mA
Power Dissipation P
D
150 mW
Thermal Resistance Junction to Ambient R
Θ
JA
833 /W
Operating Temperature Range T
J
125
Storage Temperature Range T
STG
-65~+125
Electrical Characteristics
@
T
A
= 25 unless otherwise specified
Characteristic Test Condition Symbol
BAS40T
BAS40T
-04T
BAS40T
-05T
BAS40T
-06T
Unit
Reverse Breakdown Voltage I
R
= 10uA V
BR
40 V
Maximum Forward Voltage I
F
= 1mA
I
F
= 40mA V
F
380
1000 mV
Maximum DC Reverse Current
at Rated DC Blocking Voltage
V
R
= 30V I
R
200 nA
Typical Diode Capacitance V
R
=1.0V,f=1MHz
C
D
5 pF
Reverse Recovery time
Irr=1mA,
IR=IF=10mA
RL=100Ω
trr 5 nS
REV. 2, Oct-2010, KSHR11
RATING AND CHARACTERISTIC CURVES
BAS40T, BAS40-04T thru -06T
FIG.1- TYPICAL FORWORD CHARACTERISTICS
0.0001
0.001
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1
V
F
, INSTANTANEO US FORWARD VOLTAGE, (V)
I
F
, INSTANTANEO US FO RWARD
CURRENT, (A)
FIG.2- TYPICAL REVE RSE CHARACTERISTICS
0.1
10
1000
0 5 10 15 20 25 30 35 40
VR, INSTANTANEOUS REVERSE VOLTAGE, (V)
IR
, INSTANTANEOUS REVERSE
CURRENT, (nA)
FIG.3- TYPICAL JUNCTION CAPACITANCE
0
0.5
1
1.5
2
2.5
3
3.5
0 10 20 30 40
V
R
, REVERSE VOLTAGE, (V)
C
T
, CAPACITANCE, (pF)
FIG.4- POWER DERATING CURVE
0
25
50
75
100
125
150
175
200
0 25 50 75 100 125 150 175
T
A
, AMBIENT TEMA ERATURE, ( C)
P
D
, POWER DISSIPATION, (mW)
Device Marking :
Device P/N Marking Equivalent Circuit Diagram
BAS40T 43
BAS40-04T 44
BAS40-05T 45
BAS40-06T 46
O
Tj=25°C, f=1MHz
TA=25°C
TA=125°C
TA=75°C
TA=0°C
TA=-40°C
TA=-40°C
TA=0°C
TA=25°C
TA=75°C
TA=125°C
Legal Disclaimer Notice
BAS40T, BAS40-04T thru -06T
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and specifications
at any time without notice. Customers should obtain and confirm the latest product
information and specifications before final design, purchase or use.
LSC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does LSC assume any liability for application assistance or
customer product design. LSC does not warrant or accept any liability with products which
are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
LSC.
LSC products are not authorized for use as critical components in life support devices or
systems without express written approval of LSC.