A Product Line of Diodes Incorporated ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Max RDS(ON) Features Package Max ID TA = +25C Note 5 -0.7A 1.0 @ VGS= -10V SOT23 -100V -0.5A 1.45 @ VGS= -6V * * * * * * * Fast Switching Speed Low Input Capacitance Low Gate Charge Low Threshold Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. * * * * Applications * * * * * DC - DC Converters Power Management Functions Disconnect Switches Motor Control Case: SOT-23 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) SOT-23 D S G D G S Equivalent Circuit Top View Pin Out Top View Ordering Information Part Number ZXMP10A13FTA ZXMP10A13FTC Notes: Marking 7P1 7P1 Reel size (inches) 7 13 Tape width (mm) 8 8 Quantity per reel 3000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated's definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information 7P1 ZXMP10A13F Document number: DS33596 Rev. 2 - 2 7P1 = Product Type Marking Code 1 of 8 www.diodes.com July 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A13F Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V TA = +70C Pulsed Drain Current (Note 7) Continuous Source Current (Body Diode) (Note 6) Pulsed Source Current (Body Diode) (Note 7) (Note 6) (Note 6) (Note 5) ID IDM IS ISM Value -100 20 -0.7 -0.5 -0.6 -3.1 -1.1 -3.1 Units V V Value 625 5 806 6.4 200 155 194 -55 to +150 Unit mW mW/C mW mW/C C/W C/W C/W C A A A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Linear Derating Factor Power Dissipation (Note 6) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range Notes: Symbol PD PD RJA RJA RJL TJ, TSTG 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 6. For a device surface mounted on FR4 PCB measured at t 5 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse current limited by maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMP10A13F Document number: DS33596 Rev. 2 - 2 2 of 8 www.diodes.com July 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A13F Thermal Characteristics 10 -ID Drain Current (A) Limited 1 DC 100m 1s 100ms 10ms 10m 1ms Single Pulse Tamb=25C 1 100s 10 100 -VDS Drain-Source Voltage (V) Max Power Dissipation (W) 0.7 RDS(on) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 Maximum Power (W) Thermal Resistance (C/W) T amb=25C D=0.5 100 Single Pulse D=0.2 D=0.05 D=0.1 0 100 1m 10m 100m 1 10 100 1k 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document number: DS33596 Rev. 2 - 2 100 120 140 160 Single Pulse T amb=25C Pulse Width (s) ZXMP10A13F 80 Derating Curve 150 50 60 Temperature (C) Safe Operating Area 200 40 Pulse Power Dissipation 3 of 8 www.diodes.com July 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A13F Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -100 -1.0 100 V A nA ID = -250A, VGS = 0V VDS = -100V, VGS = 0V VGS = 20V, VDS = 0V VGS(th) -2.0 V Static Drain-Source On-Resistance (Note 9) RDS (on) Forward Transconductance (Notes 9 and 11) Diode Forward Voltage (Note 9) Reverse Recovery Time (Note 11) Reverse Recovery Charge (Note 11) DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10) gfs VSD trr Qrr 1.2 -0.85 29 31 -4.0 1 1.45 -0.95 ID = -250A, VDS = VGS VGS = -10V, ID = -0.6A VGS = -6V, ID = -0.5A VDS = -15V, ID = -0.6A TJ = 25C, IS = -0.75A, VGS = 0V TJ = 25C, IF = -0.9A, di/dt = 100A/s Ciss Coss Crss tD(on) tr tD(off) tf 141 13.1 10.8 1.6 2.1 5.9 3.3 Total Gate Charge (Note 10) Qg 1.8 Total Gate Charge (Note 10) Gate-Source Charge (Note 10) Gate-Drain Charge (Note 10) Qg Qgs Qgd 3.5 0.6 1.6 Notes: S V ns nC Test Condition pF VDS = -50V, VGS = 0V f = 1.0MHz ns VDD = -50V, ID = -1A, RG 6.0, VGS = -10V nC VDS = -50V, VGS = -5V, ID = -0.6A nC VDS = -50V, VGS = -10V, ID = -0.6A 9. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 10. Switching characteristics are independent of operating junction temperature. 11. For design aid only, not subject to production testing. ZXMP10A13F Document number: DS33596 Rev. 2 - 2 4 of 8 www.diodes.com July 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A13F Typical Characteristics 10 10 10V 7V 5V 1 10V T = 150C -ID Drain Current (A) -ID Drain Current (A) T = 25C 4.5V 4V 0.1 3.5V 0.01 7V 1 5V 4.5V 4V 0.1 3.5V 3V 0.01 -VGS 1E-3 -VGS 1E-3 0.1 1 10 0.1 1 10 -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 2.2 Normalised RDS(on) and VGS(th) -ID Drain Current (A) 1 T = 150C T = 25C 0.1 -VDS = 10V 0.01 3 4 2.0 VGS = -10V 1.8 ID = - 0.6A 1.6 RDS(on) 1.4 1.2 VGS(th) 1.0 0.8 VGS = VDS 0.6 ID = -250uA 0.4 -50 5 0 -VGS Gate-Source Voltage (V) Typical Transfer Characteristics 100 150 Normalised Curves v Temperature 10 3.5V -VGS 100 T = 25C 4V 4.5V 5V 10 7V 10V 1 -ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance () 50 Tj Junction Temperature (C) T = 150C 1 T = 25C 0.1 0.01 0.01 0.1 1 10 On-Resistance v Drain Current ZXMP10A13F Document number: DS33596 Rev. 2 - 2 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) -ID Drain Current (A) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com July 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A13F Typical Characteristics (cont.) C Capacitance (pF) 200 f = 1MHz 150 CISS COSS 100 CRSS 50 0 0.1 1 10 100 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage -VGS Gate-Source Voltage (V) 10 VGS = 0V ID = -0.6A 8 6 4 2 VDS = -50V 0 0 1 2 3 4 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits ZXMP10A13F Document number: DS33596 Rev. 2 - 2 6 of 8 www.diodes.com July 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A13F Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X ZXMP10A13F Document number: DS33596 Rev. 2 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E E 7 of 8 www.diodes.com July 2012 (c) Diodes Incorporated A Product Line of Diodes Incorporated ZXMP10A13F IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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