ZXMP10A13F
Document number: DS33596 Rev. 2 - 2 1 of 8
www.diodes.com July 2012
© Diodes Incorporated
Z
X
MP10A13F
A
Product Line o
f
Diodes Incorporated
100V P-CHANNEL ENHANCEMENT MODE MOSFE T
Product Summary
BVDSS Max RDS(ON) Package
Max ID
TA = +25°C
Note 5
-100V 1.0Ω @ VGS= -10V SOT23 -0.7A
1.45Ω @ VGS= -6V -0.5A
Description
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Applications
• DC - DC Converters
• Power Management Functions
• Disconnect Switches
• Motor Control
Features
• Fast Switching Speed
• Low Input Capacitance
• Low Gate Charge
• Low Threshold
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
Ordering Information
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMP10A13FTA 7P1 7 8 3000
ZXMP10A13FTC 7P1 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes In corpor ated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View Equivalent Circuit
D
S
G
Top View
Pin Out
D
S
G
SOT-23
7P1 = Product Type Marking Code
7P1
ZXMP10A13F
Document number: DS33596 Rev. 2 - 2 2 of 8
www.diodes.com July 2012
© Diodes Incorporated
Z
X
MP10A13F
A
Product Line o
f
Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current VGS = 10V (Note 6)
TA = +70°C (Note 6)
(Note 5) ID -0.7
-0.5
-0.6 A
Pulsed Drain Current (Note 7) IDM -3.1 A
Continuous Source Current (Body Diode) (Note 6) IS -1.1 A
Pulsed Source Current (Body Diode) (Note 7) ISM -3.1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Linear Derating Factor PD
625
5 mW
mW/°C
Power Dissipation (Note 6)
Linear Derating Factor PD
806
6.4 mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 5) RθJA 200 °C/W
Thermal Resistance, Junction to Ambient (Note 6) RθJA 155 °C/W
Thermal Resistance, Junction to Leads (Note 8) RθJL 194 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMP10A13F
Document number: DS33596 Rev. 2 - 2 3 of 8
www.diodes.com July 2012
© Diodes Incorporated
Z
X
MP10A13F
A
Product Line o
f
Diodes Incorporated
Thermal Characteristics
110100
10m
100m
1
10
Single Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating A rea
-ID Drai n Cu rrent (A)
-VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
D e rat in g Curv e
Temperature (°C)
Max P owe r Dissip at i on (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200 Tamb=25°C
Transien t Therm al Imp edance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Therm al Re sist an ce (° C/ W)
Puls e Width (s) 100µ 1m 10m 100m 1 10 100 1k
1
10
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Puls e Width (s)
Maximum Power (W)
ZXMP10A13F
Document number: DS33596 Rev. 2 - 2 4 of 8
www.diodes.com July 2012
© Diodes Incorporated
Z
X
MP10A13F
A
Product Line o
f
Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS -100 ⎯ ⎯ V ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1.0 µA
VDS = -100V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS
(
th
)
-2.0 ⎯ -4.0 V
ID = -250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 9) RDS (on) ⎯ ⎯ 1 Ω VGS = -10V, ID = -0.6A
1.45 VGS = -6V, ID = -0.5A
Forward Transconductance (Notes 9 and 11) gfs ⎯ 1.2 ⎯ S VDS = -15V, ID = -0.6A
Diode Forward Voltage (Note 9) VSD ⎯ -0.85 -0.95 V
TJ = 25°C, IS = -0.75A, VGS = 0V
Reverse Recovery Time (Note 11) tr
r
⎯ 29 ⎯ ns TJ = 25°C, IF = -0.9A,
di/dt = 100A/μs
Reverse Recovery Charge (Note 11) Qr
r
⎯ 31 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance Ciss ⎯ 141 ⎯ pF VDS = -50V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ⎯ 13.1 ⎯
Reverse Transfer Capacitance Crss ⎯ 10.8 ⎯
Turn-On Delay Time (Note 10) tD
(
on
)
⎯ 1.6 ⎯
ns VDD = -50V, ID = -1A,
RG ≅ 6.0Ω, VGS = -10V
Turn-On Rise Time (Note 10) t
r
⎯ 2.1 ⎯
Turn-Off Delay Time (Note 10) tD
(
off
)
⎯ 5.9 ⎯
Turn-Off Fall Time (Note 10) tf ⎯ 3.3 ⎯
Total Gate Charge (Note 10) Qg ⎯ 1.8 ⎯ nC VDS = -50V, VGS = -5V,
ID = -0.6A
Total Gate Charge (Note 10) Q
g
⎯ 3.5 ⎯ nC VDS = -50V, VGS = -10V,
ID = -0.6A
Gate-Source Charge (Note 10) Q
s ⎯ 0.6 ⎯
Gate-Drain Charge (Note 10) Q
g
d ⎯ 1.6 ⎯
Notes: 9. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
ZXMP10A13F
Document number: DS33596 Rev. 2 - 2 5 of 8
www.diodes.com July 2012
© Diodes Incorporated
Z
X
MP10A13F
A
Product Line o
f
Diodes Incorporated
Typical Characteristics
0.1 1 10
1E-3
0.01
0.1
1
10
0.1 1 10
1E-3
0.01
0.1
1
10
345
0.01
0.1
1
-50 0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.01 0.1 1 10
1
10
100
0.20.40.60.81.01.2
0.01
0.1
1
10
10V
5V
4.5V
-VGS
3.5V
7V
4V
O u tpu t C h aracteristics
T = 25°C
-VGS
-ID Drain Current (A)
-VDS Drain -Sou rce Voltage (V)
5V
4.5V
4V
3V
7V
10V
3.5V
O u tput Characteristics
T = 150°C
-ID Drain Current (A)
-VDS Drain -Sou rce Voltage (V)
Typical Transfer Characteristics
-VDS = 10V
T = 25°C
T = 150°C
-ID Drain Current (A)
-VGS Gate-Sou rce Voltage (V) Norm alised Curv es v Tem p erature
RDS(on)
VGS = -10V
ID = - 0.6A
VGS(th)
VGS = VDS
ID = -250uA
Normalised RDS(on) and VGS(th)
Tj Jun ction Temperature (°C)
4.5V
10V
4V
5V
7V
3.5V
O n-R esistance v Drain Cu rrent
T = 25°C
-VGS
RDS(on) Drain-Source On-Resistance (Ω)
-ID Dr ai n Cu rrent (A)
T = 150°C
T = 25°C
Source-Drain Dio d e Forwa rd Voltage
-VSD Source-Drain Voltage (V)
-ISD Reve rse Drain Current (A)
ZXMP10A13F
Document number: DS33596 Rev. 2 - 2 6 of 8
www.diodes.com July 2012
© Diodes Incorporated
Z
X
MP10A13F
A
Product Line o
f
Diodes Incorporated
Typical Characteristics (cont.)
0.1 1 10 100
0
50
100
150
200
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacitance (pF)
-VDS - Drain - Source Voltage (V) 01234
0
2
4
6
8
10 ID = -0.6A
VDS = -50 V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage Q - Charge (nC)
-VGS Gate-Source Voltage (V)
Test Circuits
ZXMP10A13F
Document number: DS33596 Rev. 2 - 2 7 of 8
www.diodes.com July 2012
© Diodes Incorporated
Z
X
MP10A13F
A
Product Line o
f
Diodes Incorporated
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
ZXMP10A13F
Document number: DS33596 Rev. 2 - 2 8 of 8
www.diodes.com July 2012
© Diodes Incorporated
Z
X
MP10A13F
A
Product Line o
f
Diodes Incorporated
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com