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©2014 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FFH50US60S_F085 Rev. C1
FFH50US60S_F085 50A, 600V Stealth Diode
December 2014
Pin Assignments
1
1. Cathode 2. Anode
2
FFH50US60S_F085
50A, 600V Stealth Diode
Features
• Stealth Recovery ( trr=163ns(Typ.) @ IF=50A )
• Low Forward Voltage( VF=1.69V(Max.) @ IF=50A )
• Avalanche Energy Rated
• AEC-Q101 Qualified
Applications
• Automotive DCDC Converter
• Automotive On Board Charger
• Switching Power Supply
• Power Switching Circuits
50A,600V Stealth Diode
The FFH50US60S_F085 is a Stealth™ diode optimized
for low loss performance in output rectification.The
STEALTH™ family exhibits low reverse recovery cur-
rent(IRR),low VF and soft recovery under typical operat-
ing conditions. It has a low forward-voltage drop and is of
silicon nitride passivated.
This device is intended for use as a freewheel/clamping
diode in various automotive switching power supplies
and other power switching applications. Its low stored
charge as well as StealthTM and soft recovery character-
istics minimize ringing and electrical noise while reduce
the overall power loss.
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristics TC = 25°C unless otherwise noted
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV)Average Rectified Forward Current @ TC = 25°C50
A
IFSM Non-repetitive Peak Surge Current (Halfwave 1 Phase 50Hz) 150 A
EAVL Avalanche Energy (1A, 40mH) 20 mJ
TJ, TSTG Operating Junction and Storage Temperature - 55 to +175 °C
Symbol Parameter Max Units
RθJC Maximum Thermal Resistance, Junction to Case 0.71 °C/W
RθJA Maximum Thermal Resistance, Junction to Ambient 30 °C/W
Device Marking Device Package Tube Quantity
FFH50US60S FFH50US60S_F085 TO-247-2L - 30
1. Cathode 2. Anode
TO-247-2L
2www.fairchildsemi.com
FFH50US60S_F085 Rev. C1
FFH50US60S_F085 50A, 600V Stealth Diode
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%
2. Guaranteed by design
Test Circuit and Waveforms
Symbol Parameter Conditions Min. Typ. Max Units
IRInstantaneous Reverse Current VR = 600V TC = 25 °C - - 100 uA
TC = 175 °C - - 1000 uA
VFM1Instantaneous Forward Voltage IF = 50A TC = 25 °C
TC = 175 °C
-
-
1.27
1.19
1.69
1.57
V
V
trr2Reverse Recovery Time IF =1A, di/dt = 200A/μs,
VR = 390V
TC = 25 °C - 41 82 ns
IF = 50A, di/dt = 200A/μs,
VR= 390V
TC = 25 °C
TC = 175 °C
-
-
163
364
-
-
ns
ns
ta
tb
Qrr
Reverse Recovery Time
Reverse Recovery Charge
IF = 50A, di/dt = 200A/μs,
VR= 390V
TC = 25 °C-
-
-
65
98
886
-
-
-
ns
ns
nC
trr Test Circuit trr Waveforms and Definitions
Avalanche Energy Test Circuit Avalanche Current and Voltage Waveforms
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
3www.fairchildsemi.com
FFH50US60S_F085 Rev. C1
FFH50US60S_F085 50A, 600V Stealth Diode
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 2. Typical Reverse Current vs.
Reverse Voltage
Figure 3.Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time
vs. di/dt
Figure 5. Typical Reverse Recovery
Current vs. di/dt
Figure 6. Forward Current Derating Curve
0.1 0.5 1.0 1.5 2.0 2 .5
0.1
1
10
100
TC
= 125oC
TC = 175oC
Forward Current, IF [A]
Forward Voltage, VF
[V]
TC
= 25oC
250
100 200 300 400 50 0 600
1E-4
1E-3
0.01
0.1
1
10
100
1000
TC = 175oC
TC
= 25oC
TC = 125oC
Reverse Current , IR [μA]
Revers e Voltage, VR [V]
0.1 1 10 100
0
200
400
600
800
Capacitances , C j [pF]
Typical Capacitance
at 10V = 99pF
Re vers e Voltage , VR [V]
100 200 300 4 00 50 0
0
100
200
300
400
500
TC = 175oC
IF = 50A
TC
= 25oC
TC = 125oC
Reverse Recovery Time, trr [ns]
di/dt [A/μs]
100 200 300 400 500
0
10
20
30
40
TC = 125oC
IF = 50A
TC
= 25oC
TC = 175oC
Reverse Recovery Current, Irr
[A]
di/dt [A/μs]
25 50 75 100 125 150 1 75
0
50
100
150
Average Forward Current, IF(AV)
[A]
Case temperature, TC [ oC]
4www.fairchildsemi.com
FFH50US60S_F085 Rev. C1
FFH50US60S_F085 50A, 600V Stealth Diode
Typical Performance Characteristics (Continued)
Figure 7. Reverse Recovery Charge
Figure 8. Transient Thermal Response Curve
100 200 300 4 00 50 0
0
1000
2000
3000
4000
5000
TC = 175oC
IF = 50A
TC
= 25oC
TC = 125oC
Reverse Recovery Charge, Qrr
[nC]
di/dt [A/μs]
10-5 10-4 10-3 10-2 10-1 100101102
0.01
0.1
1
* Notes :
1. ZthJC(t) = 0.71 oC/W Typ.
2. Duty Factor , D=t1/t2
3. TJM - TC = PDM * ZthJC(t)
si ngle pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZthJ C(t), Thermal Response
t1, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
5www.fairchildsemi.com
FFH50US60S_F085 Rev. C1
FFH50US60S_F085 50A, 600V Stealth Diode
Mechanical Dimensions
Dimensions in Millimeters
TO-247-2L
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Rev. I73
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tm
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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