TRANSYS FLECTRONIES LIMITED Designed for Complementary Use with TIP110, TIP111 and TIP112 50 W at 25C Case Temperature 4 A Continuous Collector Current Minimum hee of 500 at 4V,2A TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS TO-220 PACKAGE (TOP VIEW) O Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP115 -60 Collector-base voltage (I = 0) TIP116 Vopo -80 Vv TIP 117 -100 TIP115 -60 Collector-emitter voltage (Ip = 0) TIP116 VcEO -80 Vv TIP 117 -100 Emitter-base voltage VeBo 5 Vv Continuous collector current fe -4 A Peak collector current (see Note 1) lom -6 A Continuous base current lp -50 mA Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 50 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Prot 2 WwW Unclamped inductive load energy (see Note 4) YoLlo? 25 mJ Operating junction temperature range T; -65 to +150 C Storage temperature range Tstg -65 to +150 C Lead temperature 3.2 mm from case for 10 seconds Ty 260 C NOTES: 1. This value applies for tp < 0.3 ms, duty cycle < 10%. 2. Derate linearly to 150C case temperature at the rate of 0.4 W/C. 3. Derate linearly to 150C free air temperature at the rate of 16 MW/C. 4. VBE(ott) =0, Rs = 0.1 Q, Voc =-20V. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, Ipjon) = -5 MA, Ree = 100 Q, TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN | TYP | MAX | UNIT . TIP115 -60 V Collector-emitter Ig= -30mA Ip =0 TIP116 80 V (BR)CEO breakdown voltage om Be (see Note 5) TIP117 -100 + VoE= -30 V lp =O TIP115 -2 | Collector-emitter Vee = -40V Ip =0 TIP116 2 | ma CEO cut-off current cee Be VoE= -50V lp =O TIP117 -2 Vop= -60 V lp =0 TIP115 -1 | Collector cut-off Vv 80 V Ip =0 TIP116 1 A = - = - m CBO current cB E Vop = -100 V lp =0 TIP 117 -1 | Emitter cut-off Vea= -5V | 0 5 mA FBO current EB~ a Forward current Vecpe= 4V Ic=-1A 1000 Nee . (see Notes 5 and 6) transfer ratio Vecpe= 4V Ic=-2A 500 v Collectoremitter Ip= -8mA Ip=-2A (see Notes 5 and 6) 25 | V CE(sat) saturation voltage Be ce Vee soemnitter Voe= -4V Ip=-2A (see Notes 5 and 6) 28] Vv BE voltage CE ce Parallel diode Vec le= A lp =O (see Notes 5 and 6) -3.5 Vv forward voltage NOTES: 5. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS t MIN | TYP | MAX | UNIT ton Turn-on time Ic =-2A IBion) = 8 MA IBoott) = 8 MA 2.6 us tott Turn-off time VBE(otty = 5 V RL = 152 tp = 20 us, de < 2% 4.5 Us t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS - Typical DC Current Gain Neg 20000 10000 1000 100 Voe t -0-5 TYPICAL DC CURRENT GAIN TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE VS VS COLLECTOR CURRENT COLLECTOR CURRENT -2-0 T Tg = -40C t, = 300 us, duty cycle < 2% Tg= 25C Iz =1,/100 = -4V = 300 us, duty cycle < 2% -1-0 |, - Collector Current - A Figure 1. Vee(sat - Base-Emitter Saturation Voltage - V 1-5 -1-0 -0-5 BAS T, = 100C 4 as J ooXN Vee(eat - COllector-Emitter Saturation Voltage - V Lyaseet emer ne ae 0-5 SAX Qt. = -40C NQe = 25C T, = 100C | | 0 -5-0 -0-5 -1-0 -5-0 I, - Collector Current - A Figure 2. E-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT -3-0 TT To = -40C \ To = 25C \ NX on 4 Y \ \ \ t B =1,/100 = 300 us, duty cycle < 2% -0-5 -1-0 -5-0 |, - Collector Current - A Figure 3. TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -10 < = 71-0 e 6 S 3 9 oO ', 70-41 TIP115 TIP116 TIP117 -0.01 -1-0 -10 -100 -1000 Vog - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION VS CASE TEMPERATURE 60 = 50 8 @ =z 40 2 a o 30 & 20 oO = a 10 0 0 25 50 75 100 125 150 T, - Case Temperature - C Figure 5. TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. T0220 470 4,20 3,96 < > 1,32 9371 2,95 123 L 2,54 see Note B 6,6 __. CD 4 60 15,90 14,55 see Note C _ 64 3,5 S vy ____ v Kl 14,1 1,70 12,7 0,97 1,07 0,61 @) (2) @) i u 2,74 0,64 2,34 0,41 5,28 2,90 4,88 2,40 VERSION 1 : VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.