(3 k )(1 0 0) E 2SB1258 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) A A -100min hFE VCE=-2V, IC=-3A 1000min V IB -1 A VCE(sat) IC=-3A, IB=-6mA -1.5max PC 30(Tc=25C) W VBE(sat) IC=-3A, IB=-6mA -2max Tj 150 C fT VCE=-12V, IE=0.2A 100typ MHz -55 to +150 C COB VCB=-10V, f=1MHz 100typ pF Tstg V 3.9 V 5 -2.0 mA -1 .8 m A IB -5 Collector Current I C (A) -1.2 mA -4 -0.9mA -3 -2 -1 0 0 -1 -2 -3 -4 -5 -5 -2 8000 -4A -1 -10 0 -100 -200 0 -1 8000 500 -1 12 5C C 25 500 -3 0C 100 30 -0.03 -6 -0.1 Collector Current I C (A) j-a - t Characteristics 5 Transient Thermal Resistance DC Curr ent Gain h FE 5000 1000 -0.5 -1 -6 1 0.5 1 10 Safe Operating Area (Single Pulse) 30 -20 s s 150x150x2 ite he 100x100x2 at si 10 nk -0.1 fin 20 In Without Heatsink Natural Cooling 20 ith -1 -0.5 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Collector Cur rent I C (A) 0 s 0 s 40 m 60 DC 50 10 -5 80 1m 100 10 -10 Ma xim um Powe r Dissipation P C (W) Typ 1000 P c - T a Derating (V C E =-12V) 120 100 Time t(ms) Collector Current I C (A) f T - I E Characteristics (Typical) -2 -2.2 Base-Emittor Voltage V B E (V) (V C E =-4V) Typ 1000 Cu t-off Fr eque ncy f T ( MH Z ) -2 I C =-2A -1 h FE - I C Temperature Characteristics (Typical) 5000 -0.5 -3 -6A (V C E =-4V) -0.1 -4 Base Current I B (mA) h FE - I C Characteristics (Typical) 80 -0.03 (V C E =-4V) -6 -0.6 -0.5 -1 -6 I C - V BE Temperature Characteristics (Typical) -3 Collector-Emitter Voltage V C E (V) DC Curr ent Gain h FE 0.5typ mp) mA =- 3. - 4 2. 1.6typ B C E V CE ( sat ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 4m A -6 0.6typ 6 -6 I C - V CE Characteristics (Typical) 2.40.2 Weight : Approx 2.0g a. Type No. b. Lot No. tf (s) e Te -10 tstg (s) (Cas -3 ton (s) IB2 (mA) IB1 (mA) 125C 10 -30 VBB2 (V) VBB1 (V) Collector Current I C (A) IC (A) 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 j- a ( C/ W) RL () 1.350.15 2.54 Typical Switching Characteristics (Common Emitter) VCC (V) o3.30.2 a b ) -6(Pulse-10) IC -10max VEB=-6V IC=-10mA Temp V(BR)CEO 4.20.2 2.8 c0.5 (Case IEBO V 10.10.2 -30C V -6 A 4.00.2 -100 VEBO -10max 0.80.2 VCEO VCB=-100V 0.2 ICBO Unit ) V 2SB1258 Temp -100 External Dimensions FM20(TO220F) (Ta=25C) Conditions (Case VCBO Symbol 25C Unit 8.40.2 Electrical Characteristics 2SB1258 Symbol C Application : Driver for Solenoid, Relay and Motor and General Purpose 16.90.3 Absolute maximum ratings (Ta=25C) B Equivalent circuit 13.0min Darlington 50x50x2 Without Heatsink 2 0 0.05 0.1 0.5 1 Emitter Current I E (A) 5 6 -0.05 -3 -5 -10 -50 -100 Collector-Emitter Voltage V C E (V) -200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 39