1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents Qualified Levels: JAN, JANTX, and JANTXV Schottky Barrier Diode MELF Surface Mount Available on commercial versions Qualified per MIL-PRF-19500/444 DESCRIPTION This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AA glass package. Also included in this datasheet are Microsemi's CDLL numbered variants of this series (military qualification grades not are not available for the CDLL prefix part numbers). DO-213AA (MELF) Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent of JEDEC registered 1N5711, 1N5712, 1N6857, and 1N6858 numbers. * Hermetically sealed glass construction. * Metallurgically bonded. * Double plug construction. * JAN, JANTX, JANTXV and commercial qualifications also available per MIL-PRF-19500/444 on "1N" numbers only. UB package (3-pin surface mount) 1N5711UB, 1N5712UB (B, CC, CA) (See Part Nomenclature for all available options). * Also available in: RoHS compliant versions available (commercial grade only). DO-35 package (axial-leaded) 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 APPLICATIONS / BENEFITS * * * Low reverse leakage characteristics. Small size for high density mounting using the surface mount method (see package illustration). ESD sensitive to Class 1. MAXIMUM RATINGS @ 25 C unless otherwise stated Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance, Junction-to-End Cap Average Rectified Output Current: (1) 5711 & 6263 types (2) 2810, 5712 & 6858 types (3) 6857 types Solder Temperature @ 10 s Symbol TJ and TSTG R JEC Value -65 to +150 250 Unit C C/W IO 33 75 150 260 mA NOTES: 1. At T EC and T SP = +140 C, derate I O to 0 at +150 C. 2. At T EC and T SP = +130 C, derate I O to 0 at +150 C. 3. At T EC and T SP = +110C, derate I O to 0 at +150 C. o MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 C MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0040-1, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 1 of 7 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents MECHANICAL and PACKAGING * * * * * * * * CASE: Hermetically sealed glass DO-213AA MELF (SOD-80, LL34) case package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode end is banded. MOUNTING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/C. The COE of the mounting surface system should be selected to provide a suitable match with this device. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: Approximately 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5711 UR -1 (e3) Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level Blank = Commercial grade RoHS Compliance e3 = RoHS compliant (on commercial grade only) Blank = non-RoHS compliant Metallurgically Bonded JEDEC type number (see Electrical Characteristics table) MELF Surface Mount CDLL 2810 (e3) Microsemi Designation RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant Series number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol C f IR IO t rr V (BR) Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. frequency Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V R. Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. Breakdown Voltage: A voltage in the breakdown region. VF Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current. VR Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region. Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes known historically as PIV. V RWM T4-LDS-0040-1, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 2 of 7 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents ELECTRICAL CHARACTERISTICS @ T A = 25 C unless otherwise noted TYPE NUMBER 1N5711UR-1 1N5712UR-1 1N6857UR-1 1N6858UR-1 CDLL2810 CDLL5711 CDLL5712 CDLL6263 CDLL6857 CDLL6858 MINIMUM BREAKDOWN VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM FORWARD VOLTAGE WORKING PEAK REVERSE VOLTAGE V (BR) @ 10 A Volts 70 20 20 70 20 70 20 60 20 70 V F @ 1 mA Volts 0.41 0.41 0.35 0.36 0.41 0.41 0.41 0.41 0.35 0.36 VF @ IF V @ mA 1.0 @ 15 1.0 @ 35 0.75 @ 35 0.65 @ 15 1.0 @ 35 1.0 @ 15 1.0 @ 35 1.0 @ 15 0.75 @ 35 0.65 @ 15 V RWM V (pk) 50 16 16 50 50 50 16 16 16 50 MAXIMUM REVERSE LEAKAGE CURRENT nA 200 150 150 200 100 200 150 200 150 200 IR @ VR Volts 50 16 16 50 15 50 16 50 16 50 MAXIMUM CAPACITANCE @ VR = 0 VOLTS f = 1.0 MHz CT pF 2.0 2.0 4.5 4.5 2.0 2.0 2.0 2.2 4.5 4.5 NOTE: 1. Effective minority carrier lifetime () is 100 pico seconds. T4-LDS-0040-1, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 3 of 7 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents IF - Forward Current (mA) GRAPHS V F - Forward Voltage (V) IR - Reverse Current (nA) FIGURE 1 I-V Curve showing typical Forward Voltage Variation Temperature for the 1N5712UR-1, CDLL5712 and CDLL2810 Schottky Diodes V R - Reverse Voltage (V) (PULSED) FIGURE 2 1N5712UR-1, CDLL5712 and CDLL2810 Typical variation of Reverse Current (I R ) vs Reverse Voltage (V R ) at Various Temperatures T4-LDS-0040-1, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 4 of 7 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents IF - Forward Current (mA) GRAPHS V F - Forward Voltage (V) IR - Reverse Current (nA) FIGURE 3 I - V curve showing typical Forward Voltage Variation With Temperature Schottky Diode 1N5711UR-1 V R - Reverse Voltage (V) (PULSED) FIGURE 4 1N5711UR-1 Typical Variation of Reverse Current (I R ) vs Reverse Voltage (V R ) at Various Temperatures T4-LDS-0040-1, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 5 of 7 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 plus CDLL equivalents RD - Dynamic Resistance (Ohms) GRAPHS I F - Forward Current (mA) (PULSED) FIGURE 5 Typical Dynamic Resistance (R D ) vs Forward Current (I F ) T4-LDS-0040-1, Rev. 1 (6/4/13) (c)2013 Microsemi Corporation Page 6 of 7