T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 1 of 7
1N5711UR-1, 1N5712UR-1, 1N 6857UR-1,
and 1N6858UR-1 pl us CDLL equivalents
Available on
commercial
versions
Schottky Barrier Diode
MELF Surface Mount
Qualified per MIL-PRF-19500/444
Quali f i ed Lev els:
JAN , JANTX, and
JANTXV
DESCRIPTION
This Schottky b ar r ier d i ode is metallurgically bonded and offers mi l itary grade qualifications
for high-reliability applications. This small diode is hermeti cally sealed and bonded into a
DO-213AA glass pac kag e. Als o included in this datasheet are Microsemi’s CD LL n um bered
var i ants of t his seri es (mili tary quali fication grades not ar e not available for the CDLL p r efi x
part numbers ) .
DO-213AA (MELF)
Package
Also available in:
UB package
(3-pin surf ac e mo unt)
1N5711UB, 1N57 12U B
(B, CC, CA)
DO-35 package
(axial-leaded)
1N5711-1, 1N5712-1,
1N6857-1, and 1N6858-1
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent of JEDEC registered 1N5711, 1N5712, 1N6857, and 1N6858 numbers.
• Hermetic ally sealed glass construction.
• Metallurgically bonded.
• Double plug construction.
• JAN, JANTX, JANTXV and commercial qualifications al so available per MIL-PRF-19500/444 on
“1N” numbers only.
(See Part Nomenclature for all available options).
• RoHS compli ant versions available (commercial grade only).
APPL ICAT IONS / BENEFITS
• Low reverse leakage characteristics.
• Small size for high density mounting usi ng the surface mount method (see pack age ill ustration).
• ESD sensitive to Class 1.
MAXIMUM RATINGS @ 25 ºC unles s other wis e stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temper ature
TJ and TSTG
-65 to +150
ºC
Thermal Resistance, Junc tion-to-End Cap
RӨJEC
250
ºC/W
Average Rectified Output Current:
5711 & 6263 types (1)
2810, 5712 & 6858 types (2)
6857 types
(3)
IO
33
75
150
mA
Solder Temperature @ 10 s
260
oC
NOTES: 1. At TEC and TSP = +140 °C, derate IO to 0 at +150 °C.
2. At TEC and TSP = +130 °C, derate IO to 0 at +150 °C.
3. At TEC and TSP = +110°C, derate IO to 0 at +150 °C.
T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 2 of 7
1N5711UR-1, 1N5712UR-1, 1N 6857UR-1,
and 1N6858UR-1 pl us CDLL equivalents
• CASE: Hermetically sealed glass DO-213AA MELF (SOD-80, LL34) case package.
• TERMINALS: Tin/lead plated or RoHS c om pliant matte-tin (on commercial grade only ) over copper clad steel. Solderable per
MIL-STD-750, m ethod 2026.
• POLARITY: Cathode end is banded.
• MOUNT ING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/°C. The COE of the mounting
surface system should be selected to provide a suitable match with this device.
• MARKING: Part number.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
• WEIGHT: Approximately 0.2 grams.
• See Package Dimensions on last page.
JAN 1N5711 UR -1 (e3)
Reliability Level
JAN = JAN lev el
JANTX = J ANTX level
JANTXV = JANTXV level
Blank = Commercial grade
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (on
commercial grade only )
Blank = non-RoHS compliant
Metallurgically Bonded
MELF Surface Mount
CDLL 2810 (e3)
Microsemi Designation
Series number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
SYMBOLS & DEF INITI ONS
Symbol
Definition
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
f
frequency
IR
Reverse Current: The dc current flowing from the external c ircuit i nto the cathode terminal at the specified voltage VR.
IO
Average Rectified Output Current: The Output Current averaged o ver a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
trr
Reverse Recovery Ti me: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse directi on and a specified decay point after a peak reverse current occurs.
V
(BR)
Breakdown Voltage: A voltage in the breakdown region.
V
F
Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a s pecified forward current.
VR
Reverse Vol tage: A positive dc cathode-anode voltage below the breakdown region.
VRWM Working Peak Reverse Vol tage: The peak vol tage excluding all transient voltages (ref JESD282-B). Also sometimes
known historically as PIV.
T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 3 of 7
1N5711UR-1, 1N5712UR-1, 1N 6857UR-1,
and 1N6858UR-1 pl us CDLL equivalents
A
TYPE
NUMBER
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
WORKING
PEAK
REVERSE
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
CURRENT
MAXIMUM
CAPACITANCE
@ VR = 0
VOLTS
f = 1.0 MHz
V(BR) @ 10 µA
VF @ 1 mA
VF @ IF
VRWM
IR @ VR
CT
Volts
Volts
V @ mA
V (p k)
nA
Volts
pF
1N5711UR-1
70
0.41
1.0 @ 15
50
200
50
2.0
1N5712UR-1
20
0.41
1.0 @ 35
16
150
16
2.0
1N6857UR-1
20
0.35
0.75 @ 35
16
150
16
4.5
1N6858UR-1
70
0.36
0.65 @ 15
50
200
50
4.5
CDLL2810
20
0.41
1.0 @ 35
50
100
15
2.0
CDLL5711
70
0.41
1.0 @ 15
50
200
50
2.0
CDLL5712
20
0.41
1.0 @ 35
16
150
16
2.0
CDLL6263
60
0.41
1.0 @ 15
16
200
50
2.2
CDLL6857
20
0.35
0.75 @ 35
16
150
16
4.5
CDLL6858
70
0.36
0.65 @ 15
50
200
50
4.5
NOTE:
1. Effective mi nori ty carrier l ifetime (τ) is 100 pico seconds.
T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 4 of 7
1N5711UR-1, 1N5712UR-1, 1N 6857UR-1,
and 1N6858UR-1 pl us CDLL equivalents
VF – For ward V ol tage (V )
FIGURE 1
I-V C urve showin g typical Forwar d Volt age Variation
Temperatu r e for the 1N5712UR-1, CDLL5712 an d CDLL2810 Schottky Diodes
VR – Revers e Voltag e ( V) (PULSED )
FIGURE 2
1N5712UR-1, CDLL5712 and CDLL2810 Typical variation of Rev er se
Cu rrent (IR) vs Reverse Voltag e ( VR) at V ar i ous Temp er atures
I
R
– Reverse Current (nA)
I
F
– Forward Current (mA)
T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 5 of 7
1N5711UR-1, 1N5712UR-1, 1N 6857UR-1,
and 1N6858UR-1 pl us CDLL equivalents
VF – For ward V ol tage (V)
FIGURE 3
I – V curve showin g typical For ward Voltag e Variation
Wit h Temp er ature S ch ott ky Di ode 1N5711 UR-1
VR – Reverse Voltage (V) ( PULSED )
FIGURE 4
1N5711UR-1 Typical Variation of Reverse Current (IR) vs R ev er se V ol tage (VR)
at Various Temp er atures
IF – Forward Current (mA)
I
R
– Reverse Current (nA)
T4-LDS-0040-1, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 6 of 7
1N5711UR-1, 1N5712UR-1, 1N 6857UR-1,
and 1N6858UR-1 pl us CDLL equivalents
IF – F orward Current (mA) (P U LSED)
FIGURE 5
Typical Dynamic R esistance (RD) vs F orw ar d Current (IF)
R
D
– Dynamic Resistance (Ohms)