Thyristors Surface Mount - 400V - 600V > NYC222, NYC226, NYC228 NYC222, NYC226, NYC228 Pb Description Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. Features * Blocking Voltage to 600 V * High Surge Current - 15 A * Very Low Forward "On" Voltage at High Current * Low-Cost Surface Mount SOT-223 Package * These are Pb-Free Devices Functional Diagram Pin Out 4 1 2 G A 3 K Additional Information Datasheet Resources Samples (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18 Thyristors Surface Mount - 400V - 600V > NYC222, NYC226, NYC228 Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit VDRM, VRRM 50 400 600 V On-State RMS Current (180 Conduction Angles; TC = 80C) IT (RMS) 1.5 A Average On-State Current, (TC = 65C, f = 60 Hz, Time = 1 sec) IT (RMS) 2.0 A Peak Repetitive Off-State Voltage (Note 1) (RGK = IK, TJ- 40 to +110C, Sine Wave, 50 to 60 Hz) NYC222 NYC226 NYC228 Peak Non-repetitive Surge Current, @TA = 25C, (1/2 Cycle, Sine Wave, 60 Hz) ITSM 15 A Circuit Fusing Considerations (t = 8.3 ms) I2t 0.9 A2s PGM 0.5 W PGM (AV) 0.1 W Forward Peak Gate Current (Pulse Width 1.0 s, TA = 25C) IFGM 0.2 A Reverse Peak Gate Voltage (Pulse Width 1.0 s, TA = 25C) VRGM 5.0 V Operating Junction Temperature Range @ Rated VRRM and VDRM TJ -40 to +110 C Storage Temperature Range Tstg -40 to +150 C Forward Peak Gate Power (Pulse Width 1.0 sec, TA = 25C) Forward Average Gate Power (t = 8.3 msec, TA = 25C) Thermal Characteristics Rating Symbol Value Thermal Resistance, Junction-to-Ambient PCB Mounted R8JA 156 Thermal Resistance, Junction-to-Tab Measured on MT2 Tab Adjacent to Epoxy R8JT 25 C/W TL 260 C Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum Unit mW Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18 Thyristors Surface Mount - 400V - 600V > NYC222, NYC226, NYC228 Electrical Characteristics - OFF (TJ = 25C unless otherwise noted) Characteristic Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK = Rated VDRM or VRRM, RGK = 1000 kQ Symbol TJ = 25C Min Typ Max - - 1.0 - - 200 Unit IDRM, A TJ = 110C Electrical Characteristics - ON (TJ = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Peak Forward On-State Voltage (Note 2) (ITM = 2.2 A Peak) TC = 25C HGate Trigger Current (Note 3) (VD = 12 V, RL = 100 , TC = 25C) TC =-40C TC = 25C Gate Trigger Voltage (dc) (Note 3) (VAK = 7 Vdc, RL = 100) TC =-40C Gate Non-Trigger Voltage (VAK = VDRM, RL = 100 ) TC = 110C TC = 25C Holding Current (VAK = 12 V, RGK = 1000 ) Initiating Current = 200 mA TC =-40C Symbol Min Typ Max Unit VTM - 1.2 1.7 V _ 30 200 _ _ 500 - - 0.8 - - 1.2 0.1 _ _ _ 2.0 5.0 _ _ 10 IGT A VGT V VGD IH V V Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate-of-Rise of Off State Voltage (TC = 110C) dv/dt - 25 - V/s Critical Rate of Rise of On-State Current (TC = 110C, IG = 2 x IGT, RGK = 1 k) di/dt - 20 _ A/s 2. Pulse Width =1.0 ms, Duty Cycle 1%. 3. RGK Current not included in measurement. Voltage Current Characteristic of SCR Parameter Symbol VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current +C urrent Anode + VTM on state IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode IH +V oltage IDRM at VDRM Forward Blocking Region (off state) (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18 Thyristors Surface Mount - 400V - 600V > NYC222, NYC226, NYC228 Current Derating Figure 1. Maximum Case Temperature Figure 3. Typical Forward Voltage Figure 2. Maximum Ambient Temperature Figure 4. Thermal Response (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18 Thyristors Surface Mount - 400V - 600V > NYC222, NYC226, NYC228 Figure 5. Typical Gate Trigger Voltage Figure 6. Typical Gate Trigger Current IGT GATE TRIGGER CURRENT ( A) 100 50 30 20 10 5.0 3.0 2.0 1.0 -40 -20 0 20 40 60 80 100 110 T JUNCTION TEMPERA TURE (C) Figure 7. Typical Holding Current I H , HOLDING CURRENT (mA) 10 VAK = 12V R L = 100 5.0 2.0 1.0 -40 -20 0 20 40 0 6 TJ , JUNCTION TEMPERA TURE (C) 80 100 110 P(AV) MAXIMUM AVERAGE POWER DISSIP ATION (WATTS) Figure 8. Power Dissipation 2.0 1.8 1.6 30 1.4 60 120 180 90 1.2 1.0 dc 0.8 0.6 0.4 0.2 0 0 0.20 0.4 .6 0.8 1.0 1.2 1.4 1.6 IT(AV) Soldering Footprint 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm inches (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18 Thyristors Surface Mount - 400V - 600V > NYC222, NYC226, NYC228 Dimensions Inches Dim Millimeters Min Nom Max Min Nom Max A --- --- 0.071 --- --- 1.80 A1 0.001 0.003 0.005 0.02 0.07 0.13 b 0.026 0.030 0.033 0.66 0.75 0.84 b1 0.114 0.118 0.122 2.90 3.00 3.10 c 0.009 0.011 0.014 0.23 0.29 0.35 D 0.260 0.260 0.264 6.60 6.60 6.71 E 0.130 0.138 0.146 3.30 3.50 3.70 e --- 0.091 --- --- 2.30 --- e1 0.030 0.037 0.045 0.75 0.95 1.15 L1 0.059 0.069 0.079 1.50 1.75 2.00 HE 0.268 0.276 0.283 6.80 7.00 7.20 o 0 --- 10 0 --- 10 D b1 HE 4 12 E 3 b e1 e C A 0.08 (0003) A1 L L1 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Part Marking System Pin Assignment AYW 22xST CASE 318E STYLE 11 1 K (Cathode) 2 A (Anode) 3 G (Gate) 4 A (Anode) 1 A= Y= W= 22xST= Assembly Location Year Work Week Specific Device Code x = 2, 6 or 8 (Note: Microdot may be in either location) Ordering Information Device Package NYC222STT1G SOT-223 (Pb-Free) NYC226STT1G SOT-223 (Pb-Free) NYC228STT1G SOT-223 (Pb-Free) Shipping 1000/Tape & Reel Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics (c) 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/18/18