© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/18/18
Thyristors
Surface Mount – 400V – 600V > NYC222, NYC226, NYC228
• Blocking Voltage to 600 V
• High Surge Current − 15 A
• Very Low Forward “On” Voltage at High Current
• Low-Cost Surface Mount SOT−223 Package
• These are Pb−Free Devices
Features
Designed and tested for repetitive peak operation required
for CD ignition, fuel ignitors, flash circuits, motor controls
and low-power switching applications.
Description
NYC222, NYC226, NYC228
Functional Diagram
K
G
A
Pb
Additional Information
Samples
Resources
Datasheet
4
1 2 3
Pin Out
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/18/18
Thyristors
Surface Mount – 400V – 600V > NYC222, NYC226, NYC228
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(RGK = IK, TJ− 40 to +110°C, Sine Wave, 50 to 60 Hz)
NYC222
NYC226
NYC228
VDRM,
VRRM
50
400
600 V
On-State RMS Current (180° Conduction Angles; TC = 80°C) IT (RMS) 1.5 A
Average On−State Current, (TC = 65°C, f = 60 Hz, Time = 1 sec) IT (RMS) 2.0 A
Peak Non-repetitive Surge Current,
@TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz) ITSM 15 A
Circuit Fusing Considerations (t = 8.3 ms) I2t 0.9 A2s
Forward Peak Gate Power (Pulse Width ≤ 1.0 sec, TA = 25°C) PGM 0.5 W
Forward Average Gate Power (t = 8.3 msec, TA = 25°C) PGM (AV) 0.1 W
Forward Peak Gate Current (Pulse Width ≤ 1.0 s, TA = 25°C) IFGM 0.2 A
Reverse Peak Gate Voltage (Pulse Width ≤ 1.0 µs, TA = 25°C) VRGM 5.0 V
Operating Junction Temperature Range @ Rated VRRM and VDRM TJ-40 to +110 °C
Storage Temperature Range Tstg -40 to +150 °C
Maximum Ratings (TJ = 25°C unless otherwise noted)
Thermal Characteristics
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Ambient PCB Mounted R8JA 156 mW
Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent
to Epoxy R8JT 25 °C/W
Maximum Device Temperature for Soldering Purposes for
10 Secs Maximum TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/18/18
Thyristors
Surface Mount – 400V – 600V > NYC222, NYC226, NYC228
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK =
Rated VDRM or VRRM, RGK = 1000 kQ
TJ = 25°C
IDRM,
- - 1.0
μA
TJ = 110°C - - 200
Dynamic Characteristics
Characteristic Symbol Min Typ Max Unit
Critical Rate-of-Rise of Off State Voltage (TC = 110°C) dv/dt − 25 − V/µs
Critical Rate of Rise of On−State Current
(TC = 110°C, IG = 2 x IGT, RGK = 1 kΩ) di/dt − 20 _ A/µs
Characteristic Symbol Min Typ Max Unit
Peak Forward On-State Voltage (Note 2) (ITM = 2.2 A Peak) VTM −1.2 1. 7 V
HGate Trigger Current (Note 3)
(VD = 12 V, RL = 100 Ω, TC = 25°C)
TC = 25°C
IGT
_ 30 200
µA
TC =–40°C _ _ 500
Gate Trigger Voltage (dc) (Note 3)
(VAK = 7 Vdc, RL = 100Ω)
TC = 25°C
VGT
– – 0.8
V
TC =–40°C – – 1.2
Gate Non−Trigger Voltage
(VAK = VDRM, RL = 100 Ω) TC = 110°C VGD 0.1 _ _ V
Holding Current
(VAK = 12 V, RGK = 1000 Ω)
Initiating Current = 200 mA
TC = 25°C
IH
_ 2.0 5.0
V
TC =–40°C _ _ 10
2. Pulse Width =1.0 ms, Duty Cycle ≤ 1%.
3. RGK Current not included in measurement.
Voltage Current Characteristic of SCR
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage
IHHolding Current
+C urrent
+V oltage
VTM
I
DRM at VDRM
I
H
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
I
RRM at VRRM
(off state)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/18/18
Thyristors
Surface Mount – 400V – 600V > NYC222, NYC226, NYC228
Current Derating
Figure 1. Maximum Case Temperature Figure 3. Typical Forward Voltage
Figure 2. Maximum Ambient Temperature
Figure 4. Thermal Response
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/18/18
Thyristors
Surface Mount – 400V – 600V > NYC222, NYC226, NYC228
Figure 5. Typical Gate Trigger Voltage Figure 6. Typical Gate Trigger Current
I GATE TRIGGER CURRENT
(
GT μ
1.0
2.0
3.0
5.0
10
20
30
0-40 -20
50
20 40 60 80 100
100
110
T JUNCTION TEMPERATURE
(
°C)
A)
I , HOLDING CURRENT (mA)
H
80
20 0
11
0 100040 6
TJ, JUNCTION TEMPERATURE
(
ϒC)
1.0
5.0
2.0
-40
10
-20
VAK = 12 V
RL = 100
Figure 7. Typical Holding Current Figure 8. Power Dissipation
P MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
(AV)
1.8
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2.0
0.20 .6
I
T(AV
)
1.61.20.40
dc
1.4
120
ϒ
1.0
90ϒ
0.8
180ϒ
60ϒ
30ϒ
Soldering Footprint
1.5
0.059
mm
inches
SCALE 6:
1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/18/18
Thyristors
Surface Mount – 400V – 600V > NYC222, NYC226, NYC228
Part Marking System
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Dim
Inches Millimeters
Min Nom Max Min Nom Max
A --- --- 0.071 --- --- 1.80
A1 0.001 0.003 0.005 0.02 0.07 0.13
b 0.026 0.030 0.033 0.66 0.75 0.84
b1 0.114 0.118 0.122 2.90 3.00 3.10
c 0.009 0.011 0.014 0.23 0.29 0.35
D 0.260 0.260 0.264 6.60 6.60 6.71
E0.130 0.138 0.146 3.30 3.50 3.70
e--- 0.091 --- --- 2.30 ---
e1 0.030 0.037 0.045 0.75 0.95 1. 15
L1 0.059 0.069 0.079 1.50 1.75 2.00
HE0.268 0.276 0.283 6.80 7. 0 0 7.20
ø 0° --- 10° 0° --- 10°
Pin Assignment
1K (Cathode)
2A (Anode)
3G (Gate)
4 A (Anode)
Ordering Information
Device Package Shipping
NYC222STT1G SOT-223
(Pb-Free)
1000/Tape & ReelNYC226STT1G SOT-223
(Pb-Free)
NYC228STT1G SOT-223
(Pb-Free)
CASE 318E
STYLE 11
A=
Assembly Location
Y= Year
W= Work Week
22xST= Specific Device Code
x = 2, 6 or 8
(Note: Microdot may be in either location)
1
AYW
22xST
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the
suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all
applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics
Dimensions
A1
b1
D
E
b
e
e1
4
12 3
0.08 (0003
)
A
L1
C
HE
L
