HGTG20N60A4D - Fairchild - Datasheet.Directory

HGTG20N60A4D

600V, SMPS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diode

The HG TG20N60A4D is a MOS gated high voltage switching

device combining the best features of MOSFETs and bipolar

transistors. This device has the high input impedance of a

MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

moderately between 25oC and 150oC. The IGBT used is the

development type TA49339. The diode used in anti-parallel

is the development type TA49372.

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for hi gh frequency switch mode power

supplies.

Formerly Developmental Type TA49341.

Symbol

Features

• >100kHz Operation At 390V, 20A

• 200kHz Operation At 390V, 12A

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . . . 55ns at TJ = 125oC

• Low Conduction Loss

•Temperature Compensating SABER™ Model

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Packaging JEDEC STYLE TO-247

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N60A4D TO-247 20N60A4D

NOTE: When ordering, use the entire part number.

COLLECTOR

(FLANGE)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

Data Sheet February 2009

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60A4D UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 70 A

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 40 A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 280 A

Diode Continuous Forward Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFM110 20 A

Diode Maximum Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFM 80 A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V

Switching Safe Operating Area at TJ = 15 0oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD290 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/oC

Operating and Storage Jun ction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE 1: Pulse width limited by maximum junction temperature.

Electrical Specifications TJ = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BVCES IC = 250μA, VGE = 0V 600 - - V

Collector to Emitter Leakage Current ICES VCE = 600V TJ = 25oC - - 250 μA

TJ = 125oC--3.0mA

Collector to Emitter Saturation Voltage VCE(SAT) IC = 20A,

VGE = 15V TJ = 25oC-1.82.7V

TJ = 125oC-1.62.0V

Gate to Emitter Threshold Voltage VGE(TH) IC = 250μA, VCE = 600V 4.5 5.5 7.0 V

Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V,

L = 100μH, VCE = 600V 100 - - A

Gate to Emitter Plateau Voltage VGEP IC = 20A, VCE = 300V - 8.6 - V

On-State Gate Charge Qg(ON) IC = 20A,

VCE = 300V VGE = 15V - 142 162 nC

VGE = 20V - 182 210 nC

Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC,

ICE = 20A,

VCE = 390V,

VGE = 15V,

RG = 3Ω,

L = 500μH,

Test Circuit Figure 24

-15- ns

Current Rise Time trI -12- ns

Current Turn-Off Delay Time td(OFF)I -73- ns

Current Fall Time tfI -32- ns

Turn-On Energy (Note 3) EON1 - 105 - μJ

Turn-On Energy (Note 3) EON2 - 280 350 μJ

Turn-Off Energy (Note 2) EOFF - 150 200 μJ

Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 125oC,

ICE = 20A,

VCE = 390V, VGE = 15V,

RG = 3Ω,

L = 500μH,

Test Circuit Figure 24

-1521ns

Current Rise Time trI -1318ns

Current Turn-Off Delay Time td(OFF)I - 105 135 ns

Current Fall Time tfI -5573ns

Turn-On Energy (Note 3) EON1 - 115 - μJ

Turn-On Energy (Note 3) EON2 - 510 600 μJ

Turn-Off Energy (Note 2) EOFF - 330 500 μJ

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Diode Forward Voltage VEC IEC = 20A - 2.3 - V

Diode Reverse Recovery Time trr IEC = 20A, dIEC/dt = 200A/μs-35-ns

IEC = 1A, dIEC/dt = 200A/μs-26-ns

Thermal Resistance Junction To Case RθJC IGBT - - 0.43 oC/W

Diode - - 1.9 oC/W

NOTE:

1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in

Figure 20.

Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Typical Performance Curves Unless Other wise Specified

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

FIGURE 3. OPERA TING FREQUENCY vs COLLECT OR TO

EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

TC, CASE TEMPERATURE (oC)

ICE, DC COLLECTOR CURRENT (A)

25 75 100 125 150

100 VGE = 15V

PACKAGE LIMIT

DIE CAPABILITY

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

700

ICE, COLLECTOR TO EMITTER CURRENT (A)

300 400200100 500 600

100

120 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100μH

fMAX, OPERATING FREQUENCY (kHz)

ICE, COLLECTOR TO EMITTER CURRENT (A)

300

5010 20

500

TJ = 125oC, R G = 3Ω, L = 500μH, VCE = 390V

100

4030

fMAX1 = 0.05 / (td(OFF)I + td(ON)I)

RÐêÐðJC = 0.43oC/W, SEE NO

PC = CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

fMAX2 = (PD - PC) / (EON2 + EOFF)

TCVGE

15V

75oC

VGE, GATE TO EMITTER VOLTAGE (V)

ISC, PEAK SHORT CIRCUIT CURRENT (A)

tSC, SHORT CIRCUIT WITHSTAND TIME (μs)

10 11 12 15

100

250

350

45014

13 14

150

200

300

400

VCE = 390V, RG = 3Ω, TJ = 125oC

tSC

ISC

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FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR T O

EMITTER CURRENT

FIGURE 9. TURN-ON DELA Y TIME vs COLLECTOR TO

EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

Typical Performance Curves Unless Otherwise Specified (Continued)

00.81.2

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE, COLLECTOR TO EMITTER CURRENT (A)

1.6 2.0 3.2

TJ = 125oC

TJ = 150oC

PULSE DURATION = 250μs

DUTY CYCLE < 0.5%, VGE = 12V

100

TJ = 25oC

0.4 2.4 2.8

ICE, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

DUTY CYCLE < 0.5%, VGE = 15V

PULSE DURATION = 250μs

TJ = 150oCTJ = 25oC

TJ = 125oC

100

0 0.8 1.2 1.6 2.00.4 2.4 2.8

EON2, TURN-ON ENERGY LOSS (μJ)

1000

600

ICE, COLLECTOR TO EMITTER CURRENT (A)

800

400

1200

01510 20 25 30 35 40

TJ = 125oC, VGE = 12V, VGE = 15V

RG = 3Ω, L = 500μH, VCE = 390V

TJ = 25oC, VGE = 12V, VGE = 15V

200

1400

600

ICE, COLLECTOR TO EMITTER CURRENT (A)

EOFF, TURN-OFF ENERGY LOSS (μJ)

100

400

200

500

700

800

TJ = 25oC, VGE = 12V OR 15V

TJ = 125oC, VGE = 12V OR 15V

300

RG = 3Ω, L = 500μH, VCE = 390V

1510 20 25 30 35 405

ICE, COLLECTOR TO EMITTER CURRENT (A)

td(ON)I, TURN-ON DELAY TIME (ns)

1510 20 25 30 35 405

TJ = 25oC, TJ = 125oC, VGE = 15V

TJ = 25oC, TJ = 125oC, VGE = 12V

RG = 3Ω, L = 500μH, VCE = 390V

ICE, COLLECTOR TO EMITTER CURRENT (A)

trI, RISE TIME (ns)

RG = 3Ω, L = 500μH, VCE = 390V

TJ = 25oC, TJ = 125oC, VGE = 12V

TJ = 25oC OR TJ = 125oC, VGE = 15V

1510 20 25 30 35 405

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FIGURE 1 1. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT FIGURE 12. F ALL TIME vs CO LLECTOR T O EMITTER

CURRENT

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GAT E CHARGE WAVEFORMS

FIGURE 15. TOTAL SWITCHING LOSS vs CASE

TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE

Typical Performance Curves Unless Other wise Specified (Continued)

ICE, COLLECTOR TO EMITTER CURRENT (A)

td(OFF)I, TURN-OFF DELAY TIME (ns)

120

100

110

VGE = 12V, VGE = 15V, TJ = 25oC

VGE = 12V, VGE = 15V, TJ = 125oC

RG = 3Ω, L = 500μH, VCE = 390V

1510 20 25 30 35 405

ICE, COLLECTOR TO EMITTER CURRENT (A)

tfI, FALL TIME (ns)

RG = 3Ω, L = 500μH, VCE = 390V

1510 20 25 30 35 405

TJ = 125oC, VGE = 12V OR 15V

TJ = 25oC, VGE = 12V OR 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

120

7 8 9 10 12

VGE, GATE TO EMITTER VOLTAGE (V)

160

200

240

PULSE DURATION = 250μs

DUTY CYCLE < 0.5%, VCE = 10V

TJ = 125oC

TJ = -55oC

TJ = 25oC

VGE, GATE TO EMITTER VOLTAGE (V)

QG, GATE CHARGE (nC)

IG(REF) = 1mA, RL = 15Ω, TJ = 25oC

VCE = 200V

VCE = 600V

20 40 60 80 120100 140 1600

IG(REF) = 1mA, RL = 15Ω, TJ = 25oC

VCE = 400V

0.2

0.4

50 75 100

TC, CASE TEMPERATURE (oC)

0.6

1.0

12525 150

1.8

0.8

ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)

1.4

1.2

1.6

ICE = 30A

ICE = 20A

ETOTAL = EON2 + EOFF

RG = 3Ω, L = 500μH, VCE = 390V, VGE = 15V

ICE = 10A

0.1 10 100

RG, GATE RESISTANCE (Ω)

3 1000

ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)

TJ = 125oC, L = 500μH, VCE = 390V, VGE = 15V

ETOTAL = EON2 + EOFF

ICE = 10A

ICE = 20A

ICE = 30A

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FIGURE 17. CAP ACITANCE vs COLLECTOR TO EMITTER

VOLTAGE FIGURE 18. COLLECTOR TO EMITTE R ON-STA TE VOLT AGE

vs GATE TO EMITTER VOLTAGE

FIGURE 19. DIODE FORW ARD CURRENT vs FORW ARD

VOLTAGE DROP FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT

FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF

CURRENT FIGURE 22. STORED CHARGE vs RA TE OF CHANGE OF

CURRENT

Typical Performance Curves Unless Other wise Specified (Continued)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

C, CAPACITANCE (nF)

0 20406080100

FREQUENCY = 1MHz

CIES

COES

CRES

VGE, GATE TO EMITTER VOLTAGE (V)

1.7 10 12

1.8

2.0

1.9

11 13 14 15 16

2.1

2.2

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE = 30A

ICE = 20A

ICE = 10A

DUTY CYCLE < 0.5%, TJ = 25oC

PULSE DURATION = 250μs

0.5 1.0 1.5 2.5 3.0

IEC, FORWARD CURRENT (A)

VEC, FORWARD VOLTAGE (V)

02.0

25oC

125oC

PULSE DURATION = 250μs

DUTY CYCLE < 0.5%,

trr, RECOVERY TIMES (ns)

IEC, FORW ARD CURRENT (A)

4 8 16 20

dIEC/dt = 200A/μs

125oC trr

25oC tb

25oC ta

25oC trr

125oC ta

125oC tb

300 400 500 700 800

trr, RECOVERY TIMES (ns)

diEC/dt, RATE OF CHANGE OF CURRENT (A/μs)

200 600

900 1000

IEC = 20A, VCE = 390V

125oC ta

125oC tb

25oC ta

25oC tb

600

400

200

Qrr, REVERSE RECOVERY CHARGE (nC)

diEC/dt, RATE OF CHANGE OF CURRENT (A/μs)

1000500200 300 400 900

800

600 700 800

25oC, IEC = 10A

125oC, IEC = 20A

125oC, IEC = 10A

25oC, IEC = 20A

VCE = 390V

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FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Typical Performance Curves Unless Other wise Specified (Continued)

t1, RECTANGULAR PULSE DURATION (s)

ZθJC, NORMALIZED THERMAL RESPONSE

10-2

10-1

100

10-5 10-3 10-2 10-1 100

10-4

DUTY FACTOR, D = t1 / t2

PEAK TJ = (PD X ZθJC X RθJC) + TC

SINGLE PULSE

0.1

0.2

0.5

0.05

0.01

0.02

Test Circuit and Waveforms

FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS

RG = 3Ω

L = 500μH

VDD = 390V

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DUT

DIODE TA49372

tfI

td(OFF)I trI

td(ON)I

10%

90%

10%

90%

VCE

ICE

VGE

EOFF

EON2

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Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to

gate-insulation damage by the electrostatic discharge of

energy through the devices. When han dling these devices,

care should be exercised to assure that the static charge

built in the handler’s body capacitance is not discharged

through the device. With proper handling and application

procedures, however, IGBTs are currently being extensively

used in production by numerous equipment manufacturers

in military, industrial and consumer applications, with virtually

no damage problems due to electrostatic discharge. IGBTs

can be handled safely if the following basic precautions are

taken:

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as “ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers,

the hand being used should be grounded by any suitable

means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from

circuits with power on.

5. Gate Volt age Rating - Never exceed the gate-voltage

rating of VGEM. Exceeding the rated V GE can result in

permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are

essentially capacitors. Circuits that leave the gate open-

circuited or floating should be avoided. These conditions

can result in turn-on of the device due to voltage buildup

on the input capacitor due to leakage currents or pickup.

7. Gate Protection - These devices do not have an internal

monolithic Zener diode from gate to emitter. If gate

protection is required an external Zener is recommended.

Operating Frequency Information

Operating frequency information for a typical device

(Figure 3) is presented as a guide for estimating device

performance for a specific application. Other typical

frequency vs collector current (ICE) plots are possible using

the information shown for a typical unit in Figures 6, 7, 8, 9

and 11. The operating frequency plot (Fig ure 3) of a typical

device shows fMAX1 or fMAX2; whichever is smaller at each

point. The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

fMAX1 is defined by fMAX1 = 0.05/(t d(OFF)I+ td(ON)I).

Deadtime (the denominator) has been arbitrarily held to 10%

of the on-state time for a 50% duty factor. Other definitions

are possible. td(OFF)I and td(ON)I are defined in Figure 25.

Device turn-off delay can establish an additional frequency

limiting condition for an application other than TJM. td(OFF)I

is important when controlling output ripple under a lightly

loaded condition.

fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The

allowable dissipation (PD) is defined by PD=(T

JM -T

C)/RθJC.

The sum of device switching and conduction losses must not

exceed PD. A 50% duty factor was used (Figure 3) and the

conduction losses (PC) are approximated by

PC=(V

CE xI

CE)/2.

EON2 and EOFF are defined in th e sw itching waveforms

shown in Figure 25. EON2 is the integral of the

instantaneous power loss (ICE x VCE) during turn-on and

EOFF is the integral of the instantaneous power loss

(ICE xV

CE) during turn-off. All tail losses are included in the

calculation for EOFF; i.e., the collector current equals zero

(ICE = 0).

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Rev. I5

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E2CMOS™

EnSigna™

FACT™

FACT Quiet Series™

FAST®

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

I2C™

ImpliedDisconnect™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC®

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerTrench®

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

SILENT SWITCHER®

SMART START™

SPM™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic®

TINYOPTO™

TruTranslation™

UHC™

UltraFET®

VCX™

Across the board. Around the world.™

The Power Franchise™

Programmable Active Droop™

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary Fir st Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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