[INTERSIL FEATURES Constant ON-resistance for signals to +10V (DG182, 185, 188, 191), to +7.5V (all devices) e +15V power supplies <2nA leakage from signal channel in both ON and OFF states TTL, OTL, RTL direct drive compatibility ton, tott <150ns, break-before-make action Cross-talk and open switch isolation >50dB at 10MHz (752. toad) DG180-191 High-Speed Driver With Junction FET Switches GENERAL DESCRIPTION The DG180 thru DG191 series of analog gates consists of 2 or 4 N-channel junction-type field-effect transistors (J-FET) designed to function as electronic switches. Level-shifting drivers enable low-level inputs (0.8 to 2V) to control the ON- OFF state of each switch. The driver is designed to provide a turn-off speed which is faster than turn-on speed, so that break-before-make action is achieved when switching from one channel to another. In the ON state, each switch conducts current equally well in both directions. In the OFF condition, the switches will block voltages up to 20V peak-to- peak. Switch-OFF input-output feedthrough is >50dB down at 10MHz, because of the low output impedance-of the FET- gate driving circuit. SCHEMATIC DIAGRAM (Typical Channel) ONE AND TWO CHANNEL SPDT AND SPST CIRCUIT CONFIGURATION TWO CHANNEL DPST CIRCUIT CONFIGURATION ve v* Ve ve AO | wwe IN $1 IN , | os t- iD; o ! yv Los, fs Los De BD tIk d ils tt tar {i tr 1} b g!! GND V- DG186/187/188 SHOWN GND vo DG183/184/185 SHOWN ORDERING INFORMATION PART DS(on) DG sat x Y NUMBER TYPE (MAX) DG180 Dual SPST 10 0G181 Dual SPST 30 PACKAGE DGi82 Dual SPST 75 CoyePIn FLAT PACK DG183 Dual DPST 10 P - CERAMIC DIP (Special Order Oniy) DG184 Dual DPST 30 DG185 Dual DPST 75 TEMPERATURE DG186 SPDT 10 A~-MILITARY 55C TO -125C 0G187 SPDT 30 8-INDUSTRIAL 20C TO -85C . , 0G188 SPDT 75 DG189 Dual SPOT 10 ____~ DEVICE TYPE DG190 Dual SPDT 30 . DG191 Dual SPDT 75 -_ DRIVER 3-41 DG180-191 DINNERS MAXIMUM RATINGS Current (S or D)See Note3 ...............-00 205 200mA VIN oe eee eee BBV VEViIne eee eee eee 8V Storage Temperature ................ 65C to +150C VIN. ce eee eee 33V Vi-GND .............. 8V Operating Temperature .............. -55C to +125C Vo-V~ wee cece eee eee 33V Vin-GND....... Lanna BV Power Dissipation ................ 450 (TW), 750 (FLAT), VoVs .-..-e eee eee #22V) GND-V-............. 27V 825 (DIP) mW A i 36V GND-Viy....-- 02. eee av *Device mounted with all leads welded or soldered to PC board. Lead Temperature (Soldering, 10 sec) ........... goorc erate GMWIC (TW); TOMW/C (FLAT): TimWIC (DIP) above Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (V+ = +15V, V- = 15V, V; =5V, Unless Noted) A B SERIES TEST CONDITIONS PARAMETER DEVICE =55C | +25C | +125C | -20C | +25C | +85C | UNITS (Note 1) DG 181, 162, 184, 185 4 100 5 100 Vg =10V, Vp = 10V, V+ =10V 187, 188, 190, 191 nA (DG180, 183, 186, 189) (10) (1000) (15) (300) Vo = 20V, Vin = OFF tsjott) DG181, 184, 187, 190 1 100 5 100 nA Vs = 7.5V, Vo = -7.5V (DG180, 183, 186, 189) (10) (1000) (15) (300) Vin = "OFF" s DG182, 185, 188, 191 1 100 a 100 nA Vs = 10V, Vo = -10V w Vin = OFF 4 DG 181, 182, 184, 185 1 100 5 100 Vg = 10V, Vp = 10V, Vt = 104 c 187, 188, 190, 191 . nA H Ipyott) (DG180, 183, 186, 189) (10) (10001 (15) (300) V7 = -20V, Vin = OFF DG161, 184, 187, 190 1 100 5 100 nA Vs = 7.5V, Vp = -7.5V {DG180, 183, 186, 189) (10) 47000) (15) (300) . Vin = OFF DG 182, 185, 188, 191 1 100 5 100 nA Vs = 10V, Vp = -10V Vin = OFF . {pjen) + sion) } BG180, 184, 183, 184 2 -200 10 -200 na Vp = V5 = -7.5V, Vin = ON 186, 187, 189, 190 DG182, 185, 188, 191 -2 -200 10 -200 nA Vo = Vs = -10V, Vin = ON rtd ALL 260 ~250 ~250 ~250 -250 -250 BA Vin = OV NT tine ALL 10 20 10 20 HA__| Vin =5V 100: Switches 300 350 ton 30 Switches 150 180 750) Switches 250 300 ns See switching time test circuit No] tort 100. Switches 250 300 4 300 and 75!) Switches 130 150 i Cgrott) DG181, 182, 184, 185, 9 typical (21 typical) Vs = -5V, Ip = 0, f = TMHz c Cojott) 187, 188, 190, 191 6 typicat (17 typical) * pF Vo = +5V, Is = 0, f = 1MHz Cpjon) + Csion)} (DG180, 183, 186, 189) 14 typicat (17 typical) Vp = Vs = 0, f = MHz | OFF Isolation Typicatly >50dB at 10MHz (See Note 2) Ri = 760, CL = 3pF DG 180, 181, 182, 189 V6 15 190, 197 (+ DG183, 184, 185 0.1 ~ 04 DG 186, 187, 188 0.8 0.8 DG 180, 181, 182, 189, 5.0 5.0 i- 190, 191 DG183, 184, 185 4.0 ~4.0 . Vin = 5V DG 186, 187, 188 30 |. =3.0 OG180, 181, 182, 183, 45 45 s Mt 184, 185, 189, 190, 191 u 0G 186, 187, 188 3.2 3.2 e 'awo ALL -2.0 -2.0 mA t DG180, 181, 182, 189, 15 : 15 / I+ . 190, 191 DG183, 184, 185 3.0 3.0 DG 186, 187, 186 0.8 0.8 DG 180, 181, 182, 189, -5.0 45.0 190, 191 - DG183, 184, 185 ~5.5 5.5 Vin = OV 0G186, 187, 188 -3.0 =3.0' DG180, 181, 182, 183, 45 45 ft 184, 185, 189, 190, 191 / 0G 166, 187, 188 3.2 3.2 'anp ALL -2.0 -2.0 Note 1: See Switching State Diagrams for Vin ON and Vin OFF Test Conditions. Note 2: Off Isolation typically >55dB at 1MHz for DG180, 183, 186, 189. Note 3: Saturation Drain Current for DG 180, 183, 186, 189 only, typically 300mA (2msec Pulse Duration). Maximum Current on all other devices (any terminal) 30mA. 3-42