ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92545m-AAS/A1
0.26
20.32
19.32 4.0
3.0
0.5
7.62
13°
Max
7.0
6.0
2.54
1.2
0.5
3.0
1.2
3.0
4.0
3.0
3.35
7.0
6.0
0.5
0.5
7.62
1
2
4
3
0.26
13°
Max
2.54
10.16
0.26
7.62
3.0
10.16
9.16 4.0
3.0
3.35
0.5
7.0
6.0
7.62
2
3
4
7
6
5
1.2
13°
Max
0.5
0.26
2.54
Dimensions in mm
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
lUL recognised, File No. E91231
DESCRIPTION
The TLP321, TLP321-2 , TLP321-4 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Current Transfer Ratio ( 50% min)
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lHigh BVCEO ( 80Vmin )
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT OPTION G
3.35
5.08
4.08
1 8
TLP321
TLP321-2
TLP321-4
TLP321, TLP321-2, TLP321-4
1
2
3
7
8
16
15
10
9
611
512
14
413
10.46
9.86
0.6
0.1 1.25
0.75
DB92545m-AAS/A1
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.0 1.15 1.3 VIF = 10mA
Reverse Voltage (VR) 5 VIR = 10µA
Reverse Current (IR)10 µAVR = 5V
Output Collector-emitter Breakdown (BVCEO)80 VIC = 0.5mA
( Note 2 )
Emitter-collector Breakdown (BVECO) 6 VIE = 100µA
Collector-emitter Dark Current (ICEO)100 nA VCE = 48V
Coupled Current Transfer Ratio (CTR) (Note 2)
TLP321, TLP321-2, TLP321-4 50 600 %5mA IF , 5V VCE
CTR selection available GB 100 600 %
BL 200 600 %
GB 30 %1mA IF , 0.4V VCE
Collector-emitter Saturation VoltageVCE (SAT) 0.4 V8mA IF , 2.4mA IC
GB 0.4 V1mA IF , 0.2mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Rise Time tr 2µsVCC = 10V ,
Fall Time tf 3µsIC = 2mA, RL = 100Ω
Turn-on Time ton 3µs
Turn-off Time toff 3µs
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
7/12/00
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 125°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 80V
Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
DB92545m-AAS/A1
7/12/00
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation P C (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter voltage VCE ( V )
Collector-emitter saturation voltage V CE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
TA = 25°C
0
5
10
15
20
25
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 5mA
IC = 1mA
Forward current I F (mA)
Collector Current vs. Low
Collector-emitter Voltage
5
10
20
30
40
50
0 0.2 0.4 0.6 0.8 1.0
Collector current I C (mA)
IF = 2mA
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current I C (mA)
Current Transfer Ratio vs. Forward Current
Forward current IF (mA)
Current transfer ratio CTR (%)
VCE = 5V
TA = 25°C
1 2 5 10 20 50
0
80
120
160
200
240
0 2 4 6 8 10
0
10
20
30
40
50
40
50
30 20
10
15
TA = 25°C
280
320
IF = 5mA
