Product Summary
Drain source voltage VDS 42 V
On-state resistance RDS
(
on
)
100 mW
Nominal load current ID
(
Nom
)
2.17 A
Clamping energy E
A
S250 mJ
VPS05163
1
2
3
4
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET â
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Complete product spectrum and additional information http://www.infineon.com/hitfet
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
•Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Datasheet 1 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 77
http://store.iiic.cc/
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Drain source voltage V
DS
42 V
Supply voltage for full short circuit protection V
bb
(
SC
)
42
Continuous input voltage
1)
V
IN
-0.2
2)
... +10
Continuous input current
2)
-0.2V £V
IN
£ 10V
V
IN
< -0.2V or V
IN
> 10V
I
IN
self limited
|I
IN
| £ 2
mA
Operating temperature T
j
-40 ...+150 °C
Storage temperature T
st
g
-55 ... +150
Power dissipation
5)
T
C
= 85 °C
P
tot
3.8 W
Unclamped single pulse inductive energy
2)
E
A
S
250 mJ
Load dump protection V
LoadDump2)3)
= V
A
+ V
S
V
IN
= 0 and 10 V, td = 400 ms, R
I
= 2 W,
R
L
= 6 W,V
A
= 13.5 V
V
LD
50 V
Electrostatic discharge voltage
2) (Human Body Model)
according to Jedec norm
EIA/JESD22-A114-B, Section 4
V
ESD
2 kV
Thermal resistance
junction - ambient:
@ min. footprint
@ 6 cm
2
cooling area
4)
R
thJA
125
72
K/W
junction-soldering point: R
thJS
17 K/W
1For input voltages beyond these limits I
IN
has to be limited.
2not subject to production test, specified by design
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
5not subject to production test, calculated by RthJA and Rds(on)
Datasheet 2 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 77
http://store.iiic.cc/
Electrical Characteristics
Parameter Symbol Values Unit
at T
= 25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150 °C, I
D
= 10 mA
V
DS(AZ)
42 - 55 V
Off-state drain current
T
J
= -40...+85 °C, V
DS
= 32 V, V
IN
= 0 V
T
j
= 150 °C
I
DSS
-
-
1.5
4
8
12
µA
Input threshold voltage
I
D
= 0.6 mA, T
j
= 25 °C
I
D
= 0.6 mA, T
j
= 150 °C
V
IN(th)
1.3
0.8
1.7
-
2.2
-
V
On state input current I
IN
(
on
)
- 10 30 µA
On-state resistance
V
IN
= 5 V, I
D
= 2.17 A, T
j
= 25 °C
V
IN
= 5 V, I
D
= 2.17 A, T
j
= 150 °C
R
DS(on)
-
-
90
160
120
240
mW
On-state resistance
V
IN
= 10 V, I
D
= 2.17 A, T
j
= 25 °C
V
IN
= 10 V, I
D
= 2.17 A, T
j
= 150 °C
R
DS(on)
-
-
70
130
100
200
Nominal load current 5)
V
DS
= 0.5 V, T
j
< 150°C, V
IN
= 10 V, T
A
= 85 °C
I
D(Nom)
2.17 2.8 - A
Current limit (active if V
DS
>2.5 V)
1)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 200 µs
I
D(lim)
10 15 20
1
Device switched on into existing short circuit (see diagram Determination of I
D(lim)). If the device is in on condit
i
a
nd a short circuit occurs, these values might be exceeded for max. 50 µs.
5
not subject to production test, calculated by RthJA and Rds(on)
Datasheet 3 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 77
http://store.iiic.cc/
Electrical Characteristics
Parameter Symbol Values Unit
at T
= 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 4.7 W,V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
- 40 100 µs
Turn-off time V
IN
to 10% I
D
:
R
L
= 4.7 W,V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
- 70 100
Slew rate on 70 to 50% V
bb
:
R
L
= 4.7 W,V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
- 0.4 1.5 V/µs
Slew rate off 50 to 70% V
bb
:
R
L
= 4.7 W,V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
- 0.6 1.5
Protection Functions
1)
Thermal overload trip temperature T
j
t
150 175 - °C
Thermal hysteresis
2)
DT
j
t
- 10 - K
Input current protection mode
T
j
= 150 °C
I
IN(Prot)
- 100 300 µA
Unclamped single pulse inductive energy
2)
I
D
= 2.17 A, T
j
= 25 °C, V
bb
= 12 V
E
AS
250 - - mJ
Inverse Diode
Inverse diode forward voltage
I
F
= 10.9 A, t
m
= 250 µs, V
IN
= 0 V,
t
P
= 300 µs
V
SD
- 1 1.5 V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
Datasheet 4 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 77
http://store.iiic.cc/
Block diagram
Inductive and overvoltage
output clamp
Terms
HITFET
IN D
VIN
IDVDS
1
IIN
S
Vbb
RL
2
3
HITFET
VZ
D
S
Short circuit behaviour
Input circuit (ESD protection)
Gate Drive
Source/
Ground
Input
V
IN
I
IN
I
DS
T
j
Datasheet 5 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 77
http://store.iiic.cc/
1 Maximum allowable power dissipation
Ptot = f(TS) resp.
Ptot = f(TA) @ RthJA=72 K/W
-75 -50 -25 0 25 50 75 100
°C
150
T
S
;T
A
0
1
2
3
4
5
6
7
8
W
10
Ptot
6cm2
max.
2 On-state resistance
RON = f(Tj); ID=2.17A; VIN=10V
-50 -25 0 25 50 75 100 125 °C 175
Tj
0
25
50
75
100
125
150
175
mW
225
RDS(on)
typ.
max.
3 On-state resistance
R
ON = f(Tj); ID= 2.17A; VIN=5V
-50 -25 0 25 50 75 100 125 °C 175
T
j
0
25
50
75
100
125
150
175
200
mW
250
RDS(on)
typ.
max.
4 Typ. input threshold voltage
V
IN(th) = f(Tj);ID = 0.3 mA; VDS = 12V
-50 -25 0 25 50 75 100 °C 150
T
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
2
VGS(th)
Datasheet 6 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 77
http://store.iiic.cc/
5 Typ. transfer characteristics
I
D
=f(V
IN
); V
DS
=12V; T
Jstart
=25°C
1 2 3 4 5 6 7 8 V10
V
IN
0
2
4
6
8
10
12
A
16
I
D
6 Typ. short circuit current
I
D(lim)
= f(T
j
); V
DS
=12V
Parameter: V
IN
-50 -25 0 25 50 75 100 125 °C 175
T
j
10
12
14
16
18
20
A
24
I
D
5V
Vin=10V
7 Typ. output characteristics
I
D
=f(V
DS
); T
Jstart
=25°C
Parameter: V
IN
0 1 2 3 4 V6
VDS
0
2
4
6
8
10
12
14
16
A
20
ID
3V
4V
5V
6V
7V
Vin=10V
8 Off-state drain current
I
DSS
= f(T
j
)
-50 -25 0 25 50 75 100 125 °C 175
T
j
0
1
2
3
4
5
6
7
8
9
10
11
µA
13
I
DSS
typ.
max.
Datasheet 7 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 77
http://store.iiic.cc/
9 Typ. overload current
ID(lim) = f(t),Vbb=12 V, no heatsink
Parameter: Tjstart
0 1 2 3
ms
5
t
0
5
10
15
A
25
ID(lim)
-40°C
25°C
85°C
+150°C
10 Typ. transient thermal impedance
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
3
s
tp
-2
10
-1
10
0
10
1
10
2
10
K/W
ZthJA
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
11 Determination of ID(lim)
ID(lim) = f(t); tm = 200µs
Parameter: TJstart
0 0.1 0.2 0.3 0.4
ms
0.6
t
0
5
10
15
A
25
ID(lim)
-40°C
25°C
85°C
150°C
Datasheet 8 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 77
http://store.iiic.cc/
Datasheet 9 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 77
Package Outlines
1 Package Outlines
GPS05560
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5 ±0.2
A
4.6
2.3
0.7 ±0.1
0.25 MA
1.6±0.1
7±0.3
B0.25 M
±0.2
3.5
B
0...10˚
Figure 1 PG-SOT223-4 (Plastic Green Small Outline Transistor Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.Dimensions in mm
http://store.iiic.cc/
Datasheet 10 Rev. 1.3, 2008-04-14
Smart Low Side Power Switch
HITFET BSP 77
Revision History
2 Revision History
Version Date Changes
Rev. 1.3 2008-04-14 Package information updated to SOT223-4
Rev. 1.2 2007-03-28 released automotive green version
Package parameter (humidity and climatic) removed in Maximum ratings
AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added
Rev. 1.1 2004-03-05 released production version
http://store.iiic.cc/
Edition 2008-04-14
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
http://store.iiic.cc/