2001-2012 Microchip Technology Inc. DS21349C-page 1
TC105
Features
•57A (Typ) Supply Current
• 1A Output Current
•0.5A Shutdown Mode
• 300kHz Switching Frequency for Small Inductor
Size
• Programmable Sof t-Sta rt
• 92% Typical Efficiency
• Small Package: 5-Pin SOT-23A
Applications
• Palmtops
• Battery-Operated Systems
• Portable Instruments
• Positive LCD Bias Generators
• Portable Communicators
• Hand-Held Scanners
• 5V to 3V Down Converters
Device Selection Tabl e
*Other output voltages are available. Please contact
Microchip Technology Inc. for details.
Package Type
General Description
The TC105 is a step-down (Buck) switching controller
that furnishes output currents of up to 1A (max) while
delivering a typical efficiency of 92%. The TC105
normally operates in pulse width modulation mode
(PWM), but automatically switches to pulse frequency
modulation (PFM) at low output loads for greater
eff iciency. Osci llator freq uency is 300kH z, allowing use
of small (22H) inductors. Supply current draw is only
102A (max), and is reduced to less than 0.5A when
the SHDN input is brought low. Regulator operation is
suspended during shutdown. The TC105 accepts a
maximum in put voltage of 10V.
The TC105 is available in a small 5-Pin SOT-23A
packag e, occup ies minimu m board space an d is ideal
for a wide range of applications.
Functional Block Diagram
Part
Number
Output
Voltage
(V)* Package Osc.
Freq.
(kHz)
Operating
Temp.
Range
TC105503ECT 5.0 5-Pin SOT -23A 300 -40C to +85C
TC105333ECT 3.3 5-Pin SOT -23A 300 -40C to +85C
TC105303ECT 3.0 5-Pin SOT -23A 300 -40C to +85C
TC105
123
54
V
DD
GND
5-Pin SOT-23A
NOTE: 5-Pin SOT-23A is equivalent to the EIAJ SC-74A
V
OUT
SHDN
EXT
(From System
Control Logic)
54
TC105333ECT
13
2
V
DD
EXT GND
V
OUT
ON
OFF
SHDN
3.3V
V
OUT
L
1
22µH (Sumida CD54)
D
1
MA737
Si 9430
P
V
BATT
6V
NiMH
C
1
10µF/16V
R
SS
470K
C
SS
0.033µF
C2
47µF
10V
Tantalum
3.3V Regulated Supply Using 6V
NiMH Battery Pack Input
+
–
PFM/PWM Step-Down DC/DC Controller
TC105
DS21349C-page 2 2001-2012 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Voltage on VDD.......................................-0.3V to +12V
EXT Output Current ........................................±100mA
Voltage on VOUT, EXT,
SHDN Pins.....................................-0.3V to VDD +0.3V
Power Dissipation.............................................150mW
Operati ng Temperatu re Range............ .-40°C to +85°C
Storage Temperature Range..............-40°C to +125°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and funct ional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC105 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Note 1 , fOSC = 300 kHz; TA = 25°C, unless otherwise noted.
Symbol Parameter Min Typ Max Units Test Conditions
VDD Operating Supply Voltage 2.2 — 10.0 V
VDDMIN Minimum Input Voltage 0.9 — 2.2 V EXT = High; No external components;
VOUT = 0V, SHDN = VIN
IDD Operating Supply Current —
—57
67 102
122 A No external components; VR = 3.0V, 3.3V
VOUT = 0V, SHDN = VIN VR = 5.0V
ISTBY Standby Supply Curre nt —
—15
16 27
29 A No external components; VR = 3.0V, 3.3V
VOUT = SHDN = VIN VR = 5.0V
ISHDN Shutdown Supply Current — — 0.5 ASHDN = GND
fOSC Oscillator Frequency 255 300 345 kHz VIN = VOUT + 0.3V
VOUT Output Voltage V R x 0.975 VRVR x 1.025 Note 2
DTYMAX Maximum Duty Cycle (PWM Mode) 100 — — %
DTYPFM Duty Cycle (PFM Mode) 15 25 35 % IOUT = 0mA
VIH SHDN Input Logic High 0.65 — — V VOUT = 0V, No external components
VIL SHDN Input Logic Low — — 0.20 V VOUT = 0V, No external components
REXTH EXT ON Resistance to VDD —
—
—
17
16
12
24
22
17
No external components; VR = 3.0V
VR = 3.3V
VR = 5.0V
VOUT = SHDN = VIN, VEXT = (VIN – 0.4V)
REXTL EXT ON Resistance to GND —
—
—
15
14
10
20
19
14
No external components; VR = 3.0V
VR = 3.3V
VR = 5.0V
VOUT = 0V, SHDN = VIN, VEXT = 0.4V
Efficiency — 92 — %
Note 1: VR = 3.0V, VIN = 4.5V, IOUT = 200mA
VR = 3. 3V, VIN = 5.0V, IOUT = 220mA
VR = 5. 0V, VIN = 7.5V, IOUT = 320mA
2: VR is the factory output voltage setting.
2001-2012 Microchip Technology Inc. DS21349C-page 3
TC105
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1: PIN FUNCTION TABLE
Pin No.
(5-Pin SOT-23A) Symbol Description
1EXT
Switch transistor control output. This terminal connects to the gate of an external P-channel
MOSFET (or to the base of an external PNP transistor through a current limiting resistor).
2V
DD Power supply voltage input.
3 GND Ground terminal.
4 SHDN Shutdown input (active low). The device enters a low power shutdown state when this input is
brought low. During shutdown, regulator action is suspended, and supply current is reduced to
less than 0.5A. The device resumes normal operation when SHDN is again brought high.
5V
OUT V oltage sense input. This input senses output volt age for regulation and must be connected to the
output voltage node as shown in the application schematic in this data sheet.
TC105
DS21349C-page 4 2001-2012 Microchip Technology Inc.
3.0 DETAILED DESCRIPTION
The TC105 is a PFM/PWM step-down DC/DC
controller for use in systems operating from two or
more cells, or in line-powered applications. It uses
PWM as the pri mary m odulat ion scheme, bu t autom at-
ically converts to PFM at output duty cycles less than
approximately 10%. The conversion to PFM provides
reduced suppl y current, a nd there fore hig her opera tin g
efficiency at low loads. The TC105 uses an external
swit ching tra nsis tor, allow ing const ructio n of switchi ng
regulators with output currents of up to 1A.
The TC105 consumes only 102A, max, of supply
current when VIN = 5V and VOUT = 3.3V, and can be
placed in a 0.5A shutdown mode by bringing the
shutdown input (SHDN) low. The regulator remains
disabled while in shutdown mode, and output voltage
discharges to zero through the load. Normal operation
resumes when SHDN is brought high. Other features
include a built-in undervoltage lockout (UVLO) and
externally programmable soft start time.
3.1 Low Power Shutdown Mode
The TC105 enters a low power shutdown mode when
SHDN is brought low. While in shutdown, the oscillator
is disabled and the output switch is shut off. Normal
regulator operation resumes when SHDN is again
brought high. SHDN may be tied to the input supply if
not used.
3.2 Soft Start
Soft start allows the output voltage to gradually ramp
from 0 to rated output value during start-up. This action
minimizes (or eliminates) overshoot, and in general,
reduces stress on circuit components. Figure 4-1
shows the circuit required to implement soft start
(values of 470K and 0.033F for RSS and CSS
respectively, are adequate for most applications).
3.3 Undervoltage Lockout (UVLO)
The TC105 is disabled when VIN is below the under-
volt age loc kout thres hold. Th is threshol d is equal to the
guaranteed minimum operating voltage for the TC105
(i.e., 2.2V). When UVLO is active, the TC105 is
completely disabled.
3.4 Input Bypa ss Capacitors
Using an input bypass capacitor reduces peak current
transien ts draw n from the input supp ly and redu ces the
switchin g noise ge nerated by the regulato r . Th e source
impedance of the input supply determines the size of
the capacitor that should be used.
3.5 Output Capacitor
The e ffect ive ser ies resis tance of the outp ut capaci tor
directly affects the amplitude of the output voltage
ripple. (The product of the peak inductor current and
the ESR determines output ripple amplitude.) There-
fore, a capac itor with the lowest possible ESR should
be sel ected. Smal ler c apa citors a re ac cept a ble fo r light
loads or in applications where ripple is not a concern.
The Sprague 595D series of tantalum capacitors are
among the smallest of all low ESR surface mount
capacitors available. Table 4-1 lists suggested
components and suppliers.
3.6 Inductor Selection
Selecting the proper inductor value is a trade-off
between physical size and power conversion require-
ments. Lower value inductors cost less, but result in
higher ripple current and core losses. They are also
more prone to saturate since the coil current ramps
faster and could overshoot the desired peak value. This
not only reduces efficiency, but could also cause the
current rating of the external components to be
exceeded. Larger inductor values reduce both ripple
curr ent a nd co r e lo ss es , but ar e la r g er i n p hys ic al si ze
and tend to increase the start-up time slightly.
A 22H inductor is recommended as the best overall
compromise. For highest efficiency, use inductors with
a low DC resistance (less than 20 m). To minimize
radiated noise, consider using a toroid, pot core or
shielde d-b obb in inductor.
3.7 Output Diode
The high operating frequency of the TC105 requires a
high-speed diode. Schottky diodes such as the MA737
or 1N5817 through 1N5823 (and the equivalent surface
mount versions) are recommended. Select a diode
whose average current rating is greater than the peak
inductor current and whose voltage rating is higher
than VDDMAX.
2001-2012 Microchip Technology Inc. DS21349C-page 5
TC105
3.8 External Switching Transistor
Selection
EXT is a complementary output with a maximum ON
resistance of 22 to VDD when h igh and 19 to g round
when low. It is designed to directly drive a P-channel
MOSFET or a PNP bipolar transistor through a base
current limiting resistor (Figure 4-2). A PNP transistor is
recommended in applications where VIN is less than
2.5V. Otherwise, a P-channel MOSFET is preferred as
it affords the highest efficiency because it does not
draw any gate drive current. However, P-channel
MOSFETs are typically more expensive than bipolar
transistors.
P-channel MOSFET selection is determined mainly by
the on-resistance, gate-source threshold, and gate
charge requirements. Also, the drain-to-source and
gate-to-source breakdown voltage ratings must be
greater than VDDMAX. The total gate charge specifica-
tion should be less than 100nC for best efficiency. The
MOSFET must be capable of handling the required
peak inductor current, and should have a very low
on-resistance at that current. For example, an Si9430
MOSFET has a drain-to-source rating of -20V, and a
typic al on -re sista nce rDSON of 0.07 at 2A, with VGS =
-4.5V. Table 4-1 lists suppliers of external components
recommended for use with the TC105.
3.8.1 BOARD LAYOUT GUIDELINES
As with all inductive switching regulators, the TC105
generates fast switching waveforms, which radiate
noise. Interconnecting lead lengths should be mini-
mized to keep stray capacitance, trace resistance and
radiated no ise as l ow a s pos sible. In addi tion, th e GN D
pin, input bypass capacitor and output filter capacitor
ground leads should be connected to a single point.
The input capacitor should be placed as close to power
and ground pins of the TC105 as possible. The length
of the EXT trace must also be kept as short as possible.
TC105
DS21349C-page 6 2001-2012 Microchip Technology Inc.
4.0 APPLICATIONS
4.1 Circuit Examples
Figure 4-3 shows a TC105 using a PNP switching
transistor (Zetex FZT749) that has an hFE of 180 and
VCESAT of 100 mV at IC = 1A. Other high beta transis-
tors can be used, but the values of RB and CB may
need ad justment if hFE is signi ficantly dif ferent from that
of the FZ T749.
The circuit of Figure 4-4 utilizes a P-channel MOSFET
switchi ng transistor (Silconix Si9 430 ). This transi stor is
a member of the Littlefoot™ family of small outline
MOSFETs.
FIGURE 4-1: SOFT START CIRCUIT
FIGURE 4-2: EXTERNAL TRANSISTOR CONNECTION
TC105
4
SHDN
SHDN/SS
TC105
4
VIN
CSS
0.033µF
SHDN/SS
Shutdown Not Used
RSS
470K
Shutdown Used
ON
OFF
(From System
Control Logic)
+
+
–
–
RSS
470K
CSS
0.033µF
TC105
1
V
IN
V
OUT
QL
DC
L
EXT
C
B
R
B
TC105
1
V
IN
V
OUT
PL
D
EXT
C
L
P-Channel MOSFET PNP Bipolar Transistor
–
+
–
+
–
+
2001-2012 Microchip Technology Inc. DS21349C-page 7
TC105
FIGURE 4-3: REGULATOR USING PNP TRANSISTOR
FIGURE 4-4: REGULATOR USING P-CHANNEL MOSFET
TABLE 4-1: SUGGESTED COMPONENTS AND SUPPLIERS
Type Inductors Capacitors Diodes Transistors
Surface Mount Sumida
CD54 Series
CDRH Series
Coilcraft
DO Series
AVX
TPS Series
Sprague
595D Series
ON Semiconductor
MBRS340T3
Nihon
NSQ Series
Matsushita
MA737
Silconix
Little Foot MOSFET Serie s
Zetex FZT749
PNP Bipolar Transistor
Toshiba 2SA1213 PNP
Transistor
Miniature
Through-Hole Sumida
RCH Series Sanyo
OS-CON Series IRC
OAR Series
Standard
Through-Hole Coilcraft
PCH Series
Coiltronics
CTX Series
Nichicon
PL Series
United Chemi-Con
LXF Series
ON Semiconductor
TMOS Power MOSFETs
(i.e., MTP30P06V)
TC105
123
5
VIN
2.5V
4
VOUT
1.8V
ON
OFF
10µF
16V
FZ749
Q1
22µH
Sumida CD-54
MA737 47µF
10V Tantalum RSS
470K
CSS
0.033µF
VOUT
VDDEXT GND
SHDN/SS
CB
2200 pF
RB
500
+
–
+
–
+
–
+
–
TC105
123
5
VIN
4
VOUT
ON
OFF
10µF
16V
Si9430
P
22µH
Sumida CD-54
MA737 47µF
10V Tantalum RSS
470K
CSS
0.033µF
VOUT
VDD
EXT GND
SHDN/SS
–
+
–
+
–
+
TC105
DS21349C-page 8 2001-2012 Microchip Technology Inc.
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
Symbol (300kH z) Volt age
11.
22.
33.
44.
55.
66.
1repres ents product classification; TC105 = M
2represents first integer of voltage
Symbol (300kHz) Voltage
A.0
B.1
C.2
D.3
E.4
F.5
H.6
K.7
L.8
M.9
3represents first decimal of voltage
4represents production lot ID code
2001-2012 Microchip Technology Inc. DS21349C-page 9
TC105
5.2 Taping Form
5.3 Package Dimensions
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
5-Pin SOT-23A 8 mm 4 mm 3000 7 in
Carrier Tape, Number of Components Per Reel and Reel Size
User Direction of Feed
Device
Marking
PIN 1
Standard Reel Component Orientation
TR Suffix Device
(Mark Right Side Up)
W
P
.071 (1.80)
.059 (1.50)
.122 (3.10)
.098 (2.50)
.075 (1.90)
REF.
.020 (0.50)
.012 (0.30)
PIN 1
.037 (0.95)
REF.
.122 (3.10)
.106 (2.70)
.057 (1.45)
.035 (0.90)
.006 (0.15)
.000 (0.00)
.024 (0.60)
.004 (0.10)
10° MAX. .010 (0.25)
.004 (0.09)
SOT-23A-5
Dimensions: inches (mm)
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microc hip .c om/ p ac k agi ng
TC105
DS21349C-page 10 2001-2012 Microchip Technology Inc.
REVISION HISTORY
Revision C (November 2012)
Added a note to the package outline drawing.
2001-2012 Microchip Technology Inc. DS21349C-page11
TC105
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
TC105
DS21349C-page12 2001-2012 Microchip Technology Inc.
NOTES:
2001-2012 Microchip Technology Inc. DS21349C-page 13
Information contained in this publication regarding device
applications a nd the lik e is provided only f or your convenien ce
and may be supers ed ed by u pda t es . I t is your respons ibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
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suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip T echnology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense, HI-TIDE , In-Circuit Seri al
Programm ing, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver , WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2001-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620767481
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that it s family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
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QUALITY MANAGEMENT S
YSTEM
DS21349C-page 14 2001-2012 Microchip Technology Inc.
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Tel: 886-7-213-7828
Fax: 886-7-330-9305
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
EUROPE
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Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Cop e nha gen
Tel: 45-4450-2828
Fax: 45-4485-2829
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-14 4-44
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Mad rid
Tel: 34-91-708-08-90
Fax: 34-91-708-08 -91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Worldwide Sales and Service
10/26/12